CN101689570A - 采用耗尽模式GaN基FET的串叠电路 - Google Patents
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- CN101689570A CN101689570A CN200880009064A CN200880009064A CN101689570A CN 101689570 A CN101689570 A CN 101689570A CN 200880009064 A CN200880009064 A CN 200880009064A CN 200880009064 A CN200880009064 A CN 200880009064A CN 101689570 A CN101689570 A CN 101689570A
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
- H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
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- H—ELECTRICITY
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- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210189604.6A CN102694013B (zh) | 2007-03-20 | 2008-03-20 | 采用耗尽模式GaN基FET的串叠电路 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/725,760 US7501670B2 (en) | 2007-03-20 | 2007-03-20 | Cascode circuit employing a depletion-mode, GaN-based FET |
US11/725,760 | 2007-03-20 | ||
PCT/US2008/057593 WO2008116038A2 (en) | 2007-03-20 | 2008-03-20 | Cascode circuit employing a depletion-mode, gan-based fet |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210189604.6A Division CN102694013B (zh) | 2007-03-20 | 2008-03-20 | 采用耗尽模式GaN基FET的串叠电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101689570A true CN101689570A (zh) | 2010-03-31 |
CN101689570B CN101689570B (zh) | 2012-06-27 |
Family
ID=39766758
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800090640A Active CN101689570B (zh) | 2007-03-20 | 2008-03-20 | 采用耗尽模式GaN基FET的串叠电路 |
CN201210189604.6A Active CN102694013B (zh) | 2007-03-20 | 2008-03-20 | 采用耗尽模式GaN基FET的串叠电路 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210189604.6A Active CN102694013B (zh) | 2007-03-20 | 2008-03-20 | 采用耗尽模式GaN基FET的串叠电路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7501670B2 (zh) |
EP (1) | EP2140497A4 (zh) |
JP (2) | JP5580602B2 (zh) |
KR (1) | KR101497725B1 (zh) |
CN (2) | CN101689570B (zh) |
HK (1) | HK1142996A1 (zh) |
WO (1) | WO2008116038A2 (zh) |
Cited By (4)
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CN104348461A (zh) * | 2013-08-02 | 2015-02-11 | 英飞凌技术德累斯顿有限责任公司 | Mosfet驱动器器件 |
CN104604133A (zh) * | 2012-08-28 | 2015-05-06 | 夏普株式会社 | 复合型半导体器件 |
CN111199958A (zh) * | 2018-11-16 | 2020-05-26 | 苏州东微半导体有限公司 | 半导体功率器件 |
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CN103219374A (zh) * | 2012-01-24 | 2013-07-24 | 富士通株式会社 | 半导体器件及电源器件 |
CN104604133A (zh) * | 2012-08-28 | 2015-05-06 | 夏普株式会社 | 复合型半导体器件 |
CN104604133B (zh) * | 2012-08-28 | 2017-03-01 | 夏普株式会社 | 复合型半导体器件 |
CN104348461A (zh) * | 2013-08-02 | 2015-02-11 | 英飞凌技术德累斯顿有限责任公司 | Mosfet驱动器器件 |
CN111199958A (zh) * | 2018-11-16 | 2020-05-26 | 苏州东微半导体有限公司 | 半导体功率器件 |
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CN102694013B (zh) | 2015-08-12 |
CN102694013A (zh) | 2012-09-26 |
WO2008116038A3 (en) | 2008-11-20 |
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JP2010522432A (ja) | 2010-07-01 |
KR20100015747A (ko) | 2010-02-12 |
WO2008116038A2 (en) | 2008-09-25 |
JP5580602B2 (ja) | 2014-08-27 |
KR101497725B1 (ko) | 2015-03-04 |
CN101689570B (zh) | 2012-06-27 |
US20080230784A1 (en) | 2008-09-25 |
EP2140497A4 (en) | 2011-09-21 |
HK1142996A1 (en) | 2010-12-17 |
JP2014209659A (ja) | 2014-11-06 |
US7501670B2 (en) | 2009-03-10 |
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