HK1142996A1 - Cascode circuit employing a depletion-mode, gan-based fet - Google Patents
Cascode circuit employing a depletion-mode, gan-based fetInfo
- Publication number
- HK1142996A1 HK1142996A1 HK10109342.4A HK10109342A HK1142996A1 HK 1142996 A1 HK1142996 A1 HK 1142996A1 HK 10109342 A HK10109342 A HK 10109342A HK 1142996 A1 HK1142996 A1 HK 1142996A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- gan
- depletion
- mode
- cascode circuit
- circuit employing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
- H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- Computing Systems (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/725,760 US7501670B2 (en) | 2007-03-20 | 2007-03-20 | Cascode circuit employing a depletion-mode, GaN-based FET |
PCT/US2008/057593 WO2008116038A2 (en) | 2007-03-20 | 2008-03-20 | Cascode circuit employing a depletion-mode, gan-based fet |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1142996A1 true HK1142996A1 (en) | 2010-12-17 |
Family
ID=39766758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK10109342.4A HK1142996A1 (en) | 2007-03-20 | 2010-09-29 | Cascode circuit employing a depletion-mode, gan-based fet |
Country Status (7)
Country | Link |
---|---|
US (1) | US7501670B2 (zh) |
EP (1) | EP2140497A4 (zh) |
JP (2) | JP5580602B2 (zh) |
KR (1) | KR101497725B1 (zh) |
CN (2) | CN101689570B (zh) |
HK (1) | HK1142996A1 (zh) |
WO (1) | WO2008116038A2 (zh) |
Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2914500B1 (fr) * | 2007-03-30 | 2009-11-20 | Picogiga Internat | Dispositif electronique a contact ohmique ameliore |
JP2008306130A (ja) * | 2007-06-11 | 2008-12-18 | Sanken Electric Co Ltd | 電界効果型半導体装置及びその製造方法 |
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US7965126B2 (en) * | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US7884394B2 (en) * | 2009-02-09 | 2011-02-08 | Transphorm Inc. | III-nitride devices and circuits |
JP5562579B2 (ja) * | 2009-05-12 | 2014-07-30 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板の作製方法 |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US7915645B2 (en) * | 2009-05-28 | 2011-03-29 | International Rectifier Corporation | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same |
TW201103150A (en) * | 2009-07-10 | 2011-01-16 | Tekcore Co Ltd | Group III-nitride semiconductor Schottky diode and its fabrication method |
US7939857B1 (en) * | 2009-08-24 | 2011-05-10 | Itt Manufacturing Enterprises, Inc. | Composite device having three output terminals |
US20110049580A1 (en) * | 2009-08-28 | 2011-03-03 | Sik Lui | Hybrid Packaged Gate Controlled Semiconductor Switching Device Using GaN MESFET |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8802516B2 (en) * | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
CN101783666B (zh) * | 2010-02-11 | 2012-07-04 | 西安科技大学 | 一种能可靠关断的增强-耗尽型器件组合开关电路 |
US8981380B2 (en) | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
US9219058B2 (en) | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8896131B2 (en) | 2011-02-03 | 2014-11-25 | Alpha And Omega Semiconductor Incorporated | Cascode scheme for improved device switching behavior |
US8847408B2 (en) * | 2011-03-02 | 2014-09-30 | International Rectifier Corporation | III-nitride transistor stacked with FET in a package |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US9236376B2 (en) | 2011-03-21 | 2016-01-12 | Infineon Technologies Americas Corp. | Power semiconductor device with oscillation prevention |
US8766375B2 (en) * | 2011-03-21 | 2014-07-01 | International Rectifier Corporation | Composite semiconductor device with active oscillation prevention |
US9859882B2 (en) * | 2011-03-21 | 2018-01-02 | Infineon Technologies Americas Corp. | High voltage composite semiconductor device with protection for a low voltage device |
US9362905B2 (en) * | 2011-03-21 | 2016-06-07 | Infineon Technologies Americas Corp. | Composite semiconductor device with turn-on prevention control |
US9343440B2 (en) | 2011-04-11 | 2016-05-17 | Infineon Technologies Americas Corp. | Stacked composite device including a group III-V transistor and a group IV vertical transistor |
US8987833B2 (en) | 2011-04-11 | 2015-03-24 | International Rectifier Corporation | Stacked composite device including a group III-V transistor and a group IV lateral transistor |
US8710511B2 (en) | 2011-07-29 | 2014-04-29 | Northrop Grumman Systems Corporation | AIN buffer N-polar GaN HEMT profile |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
JP2013153027A (ja) * | 2012-01-24 | 2013-08-08 | Fujitsu Ltd | 半導体装置及び電源装置 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
WO2013155108A1 (en) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | N-polar iii-nitride transistors |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
US8933461B2 (en) * | 2012-08-09 | 2015-01-13 | Texas Instruments Incorporated | III-nitride enhancement mode transistors with tunable and high gate-source voltage rating |
KR101922117B1 (ko) | 2012-08-16 | 2018-11-26 | 삼성전자주식회사 | 트랜지스터를 포함하는 전자소자 및 그 동작방법 |
KR101919421B1 (ko) | 2012-08-16 | 2018-11-19 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
US9438112B2 (en) * | 2012-08-23 | 2016-09-06 | Infineon Technologies Americas Corp. | Power converter including integrated driver for depletion mode group III-V transistor |
CN104604133B (zh) * | 2012-08-28 | 2017-03-01 | 夏普株式会社 | 复合型半导体器件 |
ITTO20121081A1 (it) | 2012-12-14 | 2014-06-15 | St Microelectronics Srl | Componente elettronico di potenza normalmente spento |
WO2014127150A1 (en) | 2013-02-15 | 2014-08-21 | Transphorm Inc. | Electrodes for semiconductor devices and methods of forming the same |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
US9007117B2 (en) | 2013-08-02 | 2015-04-14 | Infineon Technologies Dresden Gmbh | Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor |
WO2015033631A1 (ja) * | 2013-09-06 | 2015-03-12 | シャープ株式会社 | トランジスタ回路 |
JP6237038B2 (ja) * | 2013-09-20 | 2017-11-29 | 富士通株式会社 | カスコードトランジスタ及びカスコードトランジスタの制御方法 |
US9525063B2 (en) | 2013-10-30 | 2016-12-20 | Infineon Technologies Austria Ag | Switching circuit |
US9048838B2 (en) | 2013-10-30 | 2015-06-02 | Infineon Technologies Austria Ag | Switching circuit |
US9257424B2 (en) | 2013-11-08 | 2016-02-09 | Infineon Technologies Austria Ag | Semiconductor device |
US9762230B2 (en) * | 2013-11-15 | 2017-09-12 | Texas Instruments Incorporated | Method and circuitry for controlling a depletion-mode transistor |
US9325308B2 (en) * | 2014-05-30 | 2016-04-26 | Delta Electronics, Inc. | Semiconductor device and cascode circuit |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
CN104201202B (zh) * | 2014-09-17 | 2017-01-25 | 电子科技大学 | 一种具有复合势垒层的氮化镓基异质结场效应管 |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US10128829B2 (en) | 2015-05-15 | 2018-11-13 | Sharp Kabushiki Kaisha | Composite semiconductor device |
US9748941B2 (en) | 2015-10-27 | 2017-08-29 | Electronics And Telecommunications Research Institute | Power semiconductor module and method for stabilizing thereof |
KR102265460B1 (ko) | 2016-01-11 | 2021-06-16 | 한국전자통신연구원 | 캐스코드 스위치 회로 |
US11322599B2 (en) | 2016-01-15 | 2022-05-03 | Transphorm Technology, Inc. | Enhancement mode III-nitride devices having an Al1-xSixO gate insulator |
JP6061047B1 (ja) | 2016-03-16 | 2017-01-18 | 富士電機株式会社 | 半導体装置 |
US9929261B2 (en) | 2016-04-07 | 2018-03-27 | Semiconductor Components Industries, Llc | Electronic device including a HEMT with a segmented gate electrode |
US10128232B2 (en) | 2016-05-20 | 2018-11-13 | Synopsys, Inc. | Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regions |
US10224401B2 (en) | 2016-05-31 | 2019-03-05 | Transphorm Inc. | III-nitride devices including a graded depleting layer |
US9865721B1 (en) * | 2016-06-15 | 2018-01-09 | Qorvo Us, Inc. | High electron mobility transistor (HEMT) device and method of making the same |
US9871510B1 (en) | 2016-08-24 | 2018-01-16 | Power Integrations, Inc. | Clamp for a hybrid switch |
US10256811B2 (en) | 2016-11-22 | 2019-04-09 | Electronics And Telecommunications Research Institute | Cascode switch circuit including level shifter |
GB2565805B (en) | 2017-08-23 | 2020-05-13 | X Fab Semiconductor Foundries Gmbh | Noff III-nitride high electron mobility transistor |
US10777638B1 (en) | 2018-01-04 | 2020-09-15 | Synopsys, Inc. | Constricted junctionless FinFET/nanowire/nanosheet device having cascode portion |
US11139290B2 (en) * | 2018-09-28 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage cascode HEMT device |
US10840798B1 (en) | 2018-09-28 | 2020-11-17 | Dialog Semiconductor (Uk) Limited | Bidirectional signaling method for high-voltage floating circuits |
CN111199958A (zh) * | 2018-11-16 | 2020-05-26 | 苏州东微半导体有限公司 | 半导体功率器件 |
US11088688B2 (en) | 2019-02-13 | 2021-08-10 | Logisic Devices, Inc. | Configurations of composite devices comprising of a normally-on FET and a normally-off FET |
US11211484B2 (en) | 2019-02-13 | 2021-12-28 | Monolithic Power Systems, Inc. | Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same |
US10991722B2 (en) | 2019-03-15 | 2021-04-27 | International Business Machines Corporation | Ultra low parasitic inductance integrated cascode GaN devices |
TWI761704B (zh) * | 2019-09-12 | 2022-04-21 | 黃知澍 | Ga-face III族/氮化物磊晶結構及其主動元件與其閘極保護元件 |
US11127848B2 (en) * | 2019-11-29 | 2021-09-21 | Vanguard International Semiconductor Corporation | Semiconductor structure and method for forming the same |
TWI775027B (zh) * | 2019-12-20 | 2022-08-21 | 世界先進積體電路股份有限公司 | 半導體結構 |
US11152364B1 (en) | 2020-04-21 | 2021-10-19 | Vanguard International Semiconductor Corporation | Semiconductor structure and methods for manufacturing the same |
CN116344595A (zh) * | 2023-03-03 | 2023-06-27 | 天狼芯半导体(成都)有限公司 | 氮化镓半导体器件及氮化镓半导体器件的制备方法 |
CN117155359B (zh) * | 2023-10-26 | 2024-02-09 | 深圳智芯微电子科技有限公司 | GaN HEMT器件预处理方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0789586B2 (ja) * | 1986-09-01 | 1995-09-27 | 株式会社日立製作所 | 半導体装置 |
JP4751498B2 (ja) * | 2000-03-30 | 2011-08-17 | 富士通株式会社 | 半導体三端子装置 |
JP5159023B2 (ja) * | 2002-12-27 | 2013-03-06 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法 |
JP2004247709A (ja) * | 2003-01-22 | 2004-09-02 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
TWI430341B (zh) * | 2003-09-09 | 2014-03-11 | Univ California | 單一或多重閘極場平板之製造 |
TWI258798B (en) * | 2003-12-05 | 2006-07-21 | Int Rectifier Corp | III-nitride device passivation and method |
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
US7202528B2 (en) * | 2004-12-01 | 2007-04-10 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
US7119380B2 (en) | 2004-12-01 | 2006-10-10 | Semisouth Laboratories, Inc. | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors |
JP2006190991A (ja) * | 2004-12-09 | 2006-07-20 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ及びその製造方法 |
US7405430B2 (en) * | 2005-06-10 | 2008-07-29 | Cree, Inc. | Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
JP4645313B2 (ja) * | 2005-06-14 | 2011-03-09 | 富士電機システムズ株式会社 | 半導体装置 |
JP4897948B2 (ja) * | 2005-09-02 | 2012-03-14 | 古河電気工業株式会社 | 半導体素子 |
WO2007109301A2 (en) * | 2006-03-20 | 2007-09-27 | International Rectifier Corporation | Merged gate cascode transistor |
-
2007
- 2007-03-20 US US11/725,760 patent/US7501670B2/en active Active
-
2008
- 2008-03-20 KR KR1020097021925A patent/KR101497725B1/ko not_active IP Right Cessation
- 2008-03-20 CN CN2008800090640A patent/CN101689570B/zh active Active
- 2008-03-20 JP JP2009554725A patent/JP5580602B2/ja not_active Expired - Fee Related
- 2008-03-20 EP EP08744097A patent/EP2140497A4/en not_active Withdrawn
- 2008-03-20 WO PCT/US2008/057593 patent/WO2008116038A2/en active Application Filing
- 2008-03-20 CN CN201210189604.6A patent/CN102694013B/zh active Active
-
2010
- 2010-09-29 HK HK10109342.4A patent/HK1142996A1/xx not_active IP Right Cessation
-
2014
- 2014-07-11 JP JP2014142832A patent/JP2014209659A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP5580602B2 (ja) | 2014-08-27 |
KR20100015747A (ko) | 2010-02-12 |
CN102694013B (zh) | 2015-08-12 |
JP2014209659A (ja) | 2014-11-06 |
US20080230784A1 (en) | 2008-09-25 |
CN102694013A (zh) | 2012-09-26 |
CN101689570A (zh) | 2010-03-31 |
EP2140497A2 (en) | 2010-01-06 |
WO2008116038A3 (en) | 2008-11-20 |
EP2140497A4 (en) | 2011-09-21 |
CN101689570B (zh) | 2012-06-27 |
JP2010522432A (ja) | 2010-07-01 |
WO2008116038A2 (en) | 2008-09-25 |
KR101497725B1 (ko) | 2015-03-04 |
US7501670B2 (en) | 2009-03-10 |
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PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20180320 |