CN101627151A - 用于热处理支撑塔的可卸式边缘环 - Google Patents
用于热处理支撑塔的可卸式边缘环 Download PDFInfo
- Publication number
- CN101627151A CN101627151A CN200680024914A CN200680024914A CN101627151A CN 101627151 A CN101627151 A CN 101627151A CN 200680024914 A CN200680024914 A CN 200680024914A CN 200680024914 A CN200680024914 A CN 200680024914A CN 101627151 A CN101627151 A CN 101627151A
- Authority
- CN
- China
- Prior art keywords
- edge ring
- tower
- silicon
- wafer
- finger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title abstract description 6
- 235000012431 wafers Nutrition 0.000 claims abstract description 114
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
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- 239000013078 crystal Substances 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
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- 239000012634 fragment Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
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- 239000011248 coating agent Substances 0.000 description 1
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- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
- Y10S414/138—Wafers positioned vertically within cassette
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69789505P | 2005-07-08 | 2005-07-08 | |
US60/697,895 | 2005-07-08 | ||
US72192605P | 2005-09-29 | 2005-09-29 | |
US60/721,926 | 2005-09-29 | ||
US11/329,971 | 2006-01-11 | ||
US11/329,971 US7736436B2 (en) | 2005-07-08 | 2006-01-11 | Detachable edge ring for thermal processing support towers |
PCT/US2006/024716 WO2007008383A2 (en) | 2005-07-08 | 2006-06-26 | Detachable edge ring for thermal processing support towers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101627151A true CN101627151A (zh) | 2010-01-13 |
CN101627151B CN101627151B (zh) | 2013-01-16 |
Family
ID=37617153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800249145A Expired - Fee Related CN101627151B (zh) | 2005-07-08 | 2006-06-26 | 用于热处理支撑塔的可卸式边缘环 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7736436B2 (zh) |
JP (1) | JP4971318B2 (zh) |
KR (1) | KR101301228B1 (zh) |
CN (1) | CN101627151B (zh) |
TW (1) | TWI409911B (zh) |
WO (1) | WO2007008383A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108461432A (zh) * | 2017-02-21 | 2018-08-28 | 阔斯泰公司 | 立式晶舟 |
CN110246784A (zh) * | 2019-06-19 | 2019-09-17 | 西安奕斯伟硅片技术有限公司 | 一种支撑结构和具有其的热处理装置 |
CN112349619A (zh) * | 2019-08-09 | 2021-02-09 | 株式会社国际电气 | 基板处理装置、半导体器件的制造方法、基板保持器具及记录介质 |
CN113327884A (zh) * | 2020-02-29 | 2021-08-31 | 长鑫存储技术有限公司 | 晶圆支撑件、晶圆加工装置及晶圆加工方法 |
CN113345822A (zh) * | 2021-07-16 | 2021-09-03 | 江苏天芯微半导体设备有限公司 | 批处理用晶圆支撑架和加载互锁真空室 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7661544B2 (en) * | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
JP4987580B2 (ja) * | 2007-06-12 | 2012-07-25 | コバレントマテリアル株式会社 | 縦型ウエハボート |
JP5042950B2 (ja) * | 2008-09-05 | 2012-10-03 | 東京エレクトロン株式会社 | 縦型熱処理装置及び基板支持具 |
WO2010070980A1 (ja) | 2008-12-17 | 2010-06-24 | 本田技研工業株式会社 | 搬送治具及びその製造方法と、それを用いた金属リングの熱処理方法 |
US8998004B2 (en) * | 2009-09-02 | 2015-04-07 | Honda Motor Co., Ltd. | Conveyance rack, method for retaining metal ring, and method for heat treatment of metal ring |
USD666709S1 (en) * | 2010-06-21 | 2012-09-04 | Saint-Gobain Ceramics & Plastics, Inc. | Kiln post |
WO2012124026A1 (ja) * | 2011-03-11 | 2012-09-20 | ダイセル・エボニック株式会社 | 靴底用シートおよびこのシートを用いた靴底 |
US8746666B2 (en) * | 2011-05-05 | 2014-06-10 | Varian Semiconductor Equipment Associates, Inc. | Media carrier |
TWI541928B (zh) * | 2011-10-14 | 2016-07-11 | 晶元光電股份有限公司 | 晶圓載具 |
US9153466B2 (en) * | 2012-04-26 | 2015-10-06 | Asm Ip Holding B.V. | Wafer boat |
TWM447450U (zh) * | 2012-08-24 | 2013-02-21 | Wistron Corp | 支撐結構、卡榫與具有其之支撐架 |
KR102098306B1 (ko) * | 2013-02-20 | 2020-04-08 | 삼성디스플레이 주식회사 | 기판 수납 장치 |
DE102013107188A1 (de) * | 2013-03-18 | 2014-09-18 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
DE102013107189A1 (de) * | 2013-03-22 | 2014-09-25 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
DE102013107193A1 (de) * | 2013-04-08 | 2014-10-09 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
CN103743239B (zh) * | 2013-12-27 | 2015-05-20 | 深圳市华星光电技术有限公司 | 石英卡夹装置及其制作方法与带该石英卡夹装置的oled高温炉 |
JP6304891B2 (ja) * | 2015-02-10 | 2018-04-04 | クアーズテック株式会社 | 縦型ウエハボート |
JP7030604B2 (ja) * | 2018-04-19 | 2022-03-07 | 三菱電機株式会社 | ウエハボートおよびその製造方法 |
US12027397B2 (en) * | 2020-03-23 | 2024-07-02 | Applied Materials, Inc | Enclosure system shelf including alignment features |
CN115803866A (zh) * | 2020-09-02 | 2023-03-14 | 株式会社国际电气 | 基板保持件、基板处理装置以及半导体装置的制造方法 |
TWI751814B (zh) * | 2020-09-22 | 2022-01-01 | 家登精密工業股份有限公司 | 支撐片狀物的中央支撐裝置及存放片狀物的儲存設備 |
CN117979474B (zh) * | 2024-03-29 | 2024-06-07 | 楚赟精工科技(上海)有限公司 | 半导体设备加热装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US5162047A (en) | 1989-08-28 | 1992-11-10 | Tokyo Electron Sagami Limited | Vertical heat treatment apparatus having wafer transfer mechanism and method for transferring wafers |
JP2963145B2 (ja) * | 1990-04-18 | 1999-10-12 | 東京エレクトロン株式会社 | Cvd膜の形成方法及び形成装置 |
US5192371A (en) | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
JP3234617B2 (ja) * | 1991-12-16 | 2001-12-04 | 東京エレクトロン株式会社 | 熱処理装置用基板支持具 |
JPH05291166A (ja) * | 1992-04-14 | 1993-11-05 | Tokyo Electron Tohoku Ltd | 異径被処理体用ボート及びそれを用いた被処理体の移し換え方法 |
JP3100252B2 (ja) | 1992-05-26 | 2000-10-16 | 東京エレクトロン株式会社 | 被処理体用ボート及びそれを用いた被処理体の移し換え方法ならびに熱処理装置 |
JP3660064B2 (ja) * | 1995-07-13 | 2005-06-15 | 株式会社半導体エネルギー研究所 | 減圧cvd装置 |
JPH0992625A (ja) | 1995-09-20 | 1997-04-04 | Tokyo Electron Ltd | 熱処理用ボ−ト |
JP3507624B2 (ja) * | 1996-06-28 | 2004-03-15 | 東京エレクトロン株式会社 | 熱処理用ボ−ト及び熱処理装置 |
JP3388668B2 (ja) * | 1996-02-29 | 2003-03-24 | 東京エレクトロン株式会社 | 熱処理用ボ−ト及び縦型熱処理装置 |
US6062853A (en) * | 1996-02-29 | 2000-05-16 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafers |
US6156121A (en) | 1996-12-19 | 2000-12-05 | Tokyo Electron Limited | Wafer boat and film formation method |
US6309928B1 (en) | 1998-12-10 | 2001-10-30 | Taiwan Semiconductor Manufacturing Company | Split-gate flash cell |
US6284997B1 (en) * | 2000-11-08 | 2001-09-04 | Integrated Materials, Inc. | Crack free welding of silicon |
-
2006
- 2006-01-11 US US11/329,971 patent/US7736436B2/en not_active Expired - Fee Related
- 2006-06-26 KR KR1020087003309A patent/KR101301228B1/ko active IP Right Grant
- 2006-06-26 WO PCT/US2006/024716 patent/WO2007008383A2/en active Application Filing
- 2006-06-26 JP JP2008520262A patent/JP4971318B2/ja active Active
- 2006-06-26 CN CN2006800249145A patent/CN101627151B/zh not_active Expired - Fee Related
- 2006-06-28 TW TW095123425A patent/TWI409911B/zh active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108461432A (zh) * | 2017-02-21 | 2018-08-28 | 阔斯泰公司 | 立式晶舟 |
CN108461432B (zh) * | 2017-02-21 | 2023-01-31 | 阔斯泰公司 | 立式晶舟 |
CN110246784A (zh) * | 2019-06-19 | 2019-09-17 | 西安奕斯伟硅片技术有限公司 | 一种支撑结构和具有其的热处理装置 |
CN112349619A (zh) * | 2019-08-09 | 2021-02-09 | 株式会社国际电气 | 基板处理装置、半导体器件的制造方法、基板保持器具及记录介质 |
CN113327884A (zh) * | 2020-02-29 | 2021-08-31 | 长鑫存储技术有限公司 | 晶圆支撑件、晶圆加工装置及晶圆加工方法 |
CN113327884B (zh) * | 2020-02-29 | 2023-10-17 | 长鑫存储技术有限公司 | 晶圆支撑件、晶圆加工装置及晶圆加工方法 |
CN113345822A (zh) * | 2021-07-16 | 2021-09-03 | 江苏天芯微半导体设备有限公司 | 批处理用晶圆支撑架和加载互锁真空室 |
CN113345822B (zh) * | 2021-07-16 | 2023-12-01 | 江苏天芯微半导体设备有限公司 | 批处理用晶圆支撑架和加载互锁真空室 |
Also Published As
Publication number | Publication date |
---|---|
TWI409911B (zh) | 2013-09-21 |
KR20080045126A (ko) | 2008-05-22 |
JP2009500850A (ja) | 2009-01-08 |
US7736436B2 (en) | 2010-06-15 |
WO2007008383A2 (en) | 2007-01-18 |
TW200703549A (en) | 2007-01-16 |
WO2007008383A3 (en) | 2009-06-04 |
US20070006803A1 (en) | 2007-01-11 |
CN101627151B (zh) | 2013-01-16 |
KR101301228B1 (ko) | 2013-08-28 |
JP4971318B2 (ja) | 2012-07-11 |
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