TWI470717B - 阻擋用的內襯遮蓋 - Google Patents
阻擋用的內襯遮蓋 Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 33
- 235000012431 wafers Nutrition 0.000 claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- 239000002245 particle Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012777 commercial manufacturing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Description
本發明係有關於一種使用於基材之熱製程的配備，特別是有關於一種在一熱熔爐中使用於半導體製程的管狀內襯。
批式熱製程係連續地被使用於矽積體電路製造的幾個步驟中。在一低溫熱製程中，利用化學氣相沉積法沉積一層氮化矽，其通常是在約700℃的溫度範圍內，使用氯矽烷及氨作為前驅氣體。其它高溫製程包括氧化、退火、矽化及其他通常使用較高溫度的製程，例如1000℃以上或甚至1350℃。
對於大規模的商業製造，通常在如第1圖所繪示之橫切面圖的結構中，會使用垂直熔爐及垂直排列的晶圓塔體，而該晶圓塔體係用以支撐熔爐內大量的晶圓。熔爐10包括一熱絕緣的加熱器筒12，用以支撐一耐熱的加熱線圈14，加熱線圈14則係為一未繪示之電源供應器所驅動。鐘形罩16通常由石英所構成，包括一半球形頂蓋18，並且合置於加熱線圈14內。一開放端式(open－ended)內襯20合置於鐘形罩16內。一支撐用塔體22坐落於一基座24上，並且在製程中，基座24及塔體22通常為內襯20所圍繞。塔體22包括三或四垂直延伸的支腳26，而支腳26則固定於塔體頂盤28及塔體底盤30。支腳26包括垂直排列的溝槽32，用於承載多數垂直排列且水平配置的晶圓34，這些晶圓34將於批式模式中進行熱製程。通常至少一的氣體注入器36配置於內襯20與塔體22之間，並且塔體22具有多數氣體排口38於不同的高度，用以在內襯20內注入製程氣體。另外，藉由一未繪示的真空幫浦，經由鐘形罩16的底部以移除製程氣體。通常，內襯20的頂部係保留開放，以使得製程中製程氣體在內襯20內可以往上流動，並且在繞著內襯20外部下降至真空幫浦之前，能在內襯20的頂部排出。加熱器筒12、鐘形罩16及內襯20可以垂直升高以容許晶圓34能自塔體22來往傳送，儘管在一些結構中，當一升降機抬升及下降基座24而將塔體22裝入或取出熔爐10的底部時，這些元件係保持固定。
以半球形頂蓋18封閉其上部的鐘形罩16，可以在熔爐10垂直的中部及上部產生均勻的熱度。此乃所謂的熱區(hot zone)，其溫度可被調控以達成最佳的熱製程。然而，鐘形罩16開放的底部及基座22的機械支撐卻導致熔爐10的較低部位具有較低的溫度，其溫度常會低到使得熱製程例如化學氣相沉積無法有效進行。熱區可以排除塔體22一些較低部位的溝槽。
通常在低溫的應用上，塔體、內襯、半球形頂蓋及注入器係由石英所構成，且通常是熔矽石。然而，石英塔體及注入器可以矽塔體、內襯及注入器來取代。碳化矽塔體亦可得之。針對不同的應用，矽塔體會具有一些結構上的差異，而矽注入器則得購自Integrated Materials,Inc.of Sunnyvale,California，並且分別揭露於美國專利公告號6,450,346(Boyle et al.)及美國專利公開號2006/0185589(Zehavi et al.)。以矽側板(silicon staves)結合在一起而形成管狀(實際上係為多邊形)的矽內襯則揭露於美國專利公告號7,137,546(Boyle et al.)中。一較佳的矽內襯設計則揭露於美國專利公開號11/536,352(Reese et al.)中，包括利用通常為矩形的矽側板，其共同邊具有連鎖(interlocking)的構造。在原生多晶矽(virgin polysilicon)(亦稱為電子級矽)的形式中，具有非常高純度的矽，因此雜質非常少。然而，矽的構件被定義為包含至少95%，最佳是99%的矽元素。
使用矽塔體、矽內襯及矽注入器可以讓熱區只包含矽部分，而實質降低污染及微粒。然而，不管內襯20及塔體22的組成為何，現在相信鐘形罩16的半球形頂蓋18會產生相當數量的微粒(大小約0.2至1微米甚至更大)，這些粒子會掉落至內襯20的開放端，並且從該處落至塔體22上及其所支撐的晶圓。任何有微粒掉落其上的模具可能不能操作或者至少是靠不住的。也就是說，微粒會嚴重地影響產率。然而，密封內襯20的上部將會防止來自氣體注入器36的製程氣體以一規則的流動形態通過塔體22及其所支撐的晶圓34。
在本發明所述之一實施例中，其包括一使用於一內襯的遮蓋，該遮蓋係於一熱基材製程中用以容納一塔體，而該塔體則係於一垂直排列方向上用以支撐多數基材。該遮蓋可於防止大部分微粒掉落至內襯內時，允許製程氣體流動通過其上。該遮蓋可以包括複數孔洞，而該複數孔洞所佔的面積不超過該遮蓋表面積或該內襯開口的10%。該內襯及該遮蓋可以由石英、碳化矽或矽所構成，最佳者係兩者由相同的物質構成。
該複數孔洞並不需要受到上述的面積限制，而該複數孔洞最好是水平橫向於該塔體及該內襯的垂直軸線而延伸，並且該遮蓋並無任何完全垂直延伸通過其上的孔洞。該複數孔洞可以係一阻擋的形式，或者是形成具有至少一直角轉彎的迴旋通道。
在本發明所述之另一實施例中，該複數孔洞可以10%或更小的面積限制垂直延伸。
更有益者係附屬於該遮蓋之該阻擋結構乃於該塔體之上部端盤中安置於一中央孔洞內。
如第1圖所示，本發明所述之一實施例，其包括一遮蓋40，配置於內襯20上部之上，內襯20能捕捉掉落的微粒，但允許製程氣體規則地在內襯20的內側與熔爐10上部間流動。如第1圖所示實施例之遮蓋40，其包括一通常為平面的頂盤42及一寬大的中央孔洞44，頂盤42的周邊為內襯20所支撐，而中央孔洞44則通常環繞著塔體22及其所支撐之晶圓34的中央軸排列。一水平延伸的底板46利用側壁48懸掛在頂盤42上。複數水平延伸的擋孔50穿過側壁48以提供內襯20內外側間有限的氣流。
氣體注入器36將製程氣體注入內襯20的內側，並且利用來自內襯20外側之裝置幫浦底部之未繪示的真空幫浦，使製程氣體可以通過擋孔50，快速地由內襯20的內側流向外側。掉落自鐘型罩16之半球形頂蓋18的重微粒會掉落到頂盤42上或是底板46上。而較輕微粒雖然會乘著製程氣體的氣流，但是通過擋孔50之快速的氣流會防止這些較輕微粒進入內襯20內側、塔體22上及其所支撐的晶圓34。在此一實施例中，沒有任何孔洞垂直延伸通過遮蓋20，而使微粒直接掉落進入內襯20內側。
本發明所述之第二實施例，如第2圖所示，其包括一具有三個部份的遮蓋51，此三部份最佳係結合在一起。一環狀碟形遮蓋盤52通常對稱於熔爐10之一中央軸。操作上，遮蓋盤52係置於相反於半球形頂蓋18之內襯20的頂部，其可包括一選擇性提供的外部框邊54，此外部框邊54則係環繞著內襯20而安置，以使得內襯20能支撐並且排列遮蓋盤52。惟在此一實施例中，框邊54並未結合至內襯20。框邊54可以一位於遮蓋盤52底部的環狀溝槽或凹口來置換，用以捕抓內襯20的頂部。遮蓋盤52之一中央孔洞可容納並且密封至一城堡狀的擋件(baffle member)56，而擋件56具有一中央口58開口於遮蓋51與半球形頂蓋18間的空間。多數通道60水平且自中央口58的垂直軸放射狀地向外延伸。擋件56的底部乃固定於一底板件(floor member)62，此底板件62具有一向上延伸的框邊64，框邊64乃形成反轉杯狀用以定義一迴旋氣流路徑，在其進入內襯20內的製程空間之前，係以放射狀通過通道60、軸向向外通過一環狀垂直延伸的裂口66(位於擋件56外側與框邊64內側之間)及環狀放射狀向外延伸的裂口68(位於框邊64頂部與遮蓋盤52底部之間)。然而，製程氣體在相對方向上有效率地自內襯20內的製程空間流至內襯20外的中央口58。此迴旋氣流通道包括三個直角轉彎。
晶圓支撐塔體22的頂盤28包括一中央孔洞70，可以容納底板件62及遮蓋51之擋件56的下部，藉以節省熔爐10內的垂直空間。位於遮蓋頂盤28的榫眼72可以接受塔體22的支腳26，而支腳26則結合至塔體22的頂盤28。
在本發明所述之一實施例中，遮蓋盤52、擋件56及底板件62係由矽所構成，最佳者為原生多晶矽，並且以旋塗式玻璃(spin－on glass)與矽粉所組成的複合黏著劑結合在一起，請參照美國專利證號16,083,694(Boyle et al.)。
掉落自半球形頂蓋18的微粒大部分掉落在遮蓋盤52，並且停留在那裡。掉落進擋件56中央孔58的較重微大部分粒掉落在底板件62曝露的頂部表面，並且停留在哪裡。在製程中，製程氣體在放射狀向內流經通道60之前，通常自塔體附近通過一迴旋通道包括裂口66、68(位於底板件52向上延伸的框邊54與城堡狀件46外部邊之間)，流入擋件56的中央孔58，並且接著向上流向鐘形罩16的頂部。因此，此氣流有助於將任何未靜落的微粒尤其是較輕微粒，自內襯20的內側帶出並且清除出來，更可藉由提高流經有限通道的流速，來增強其作用。
參照第2圖，其所繪示之內襯20為一管狀構件。然而，以通常為矩形的矽側板結合在其邊緣以形成一多邊形管狀構件內襯的矽內襯已經被開發出來。
遮蓋51可以結合至內襯20或是不以其20為支撐。後者的結構可簡化內襯20與遮蓋40的清洗及維護。後者結構可以改變遮蓋盤52周邊的銜接結構。
參照第3、4圖所示，乃繪示本發明之一第三實施例的遮蓋80，其包括一通常為碟形的頂盤82，此頂盤82具有一多邊形的外部形狀，與內襯20之多邊形排列材料一致。一周邊凹口84允許頂盤82支撐於其84上且為內襯20的材料所排列成線。頂盤82包括一中央孔洞，此中央孔洞具有一環狀內部及下部接嘴86，用以支撐一杯狀構造90之一外部框邊88。最佳者係杯狀構造90在接嘴86與框邊88間的界面上結合至頂盤82。一軸向延伸的管狀側壁92懸掛一來自框邊88的水平延伸的底部94，並且包括複數放射狀延伸的孔洞96。一反轉罩蓋98乃結合至杯狀構造90的底部94，並且包括一向上延伸的環狀凸緣100，此凸緣100在其與頂盤82底部及側壁92的外部表面間定義了一環狀迴旋通道102。遮蓋80顯示了與第2圖所示遮蓋51相似的氣流、微粒排除及與塔體的安置。
參照第5圖，乃繪示本發明之一較為簡易的第四實施例，其包括一碟形的頂盤112，此頂盤112具有一附屬附屬框邊114環繞安置於內襯的頂部20。複數斜向至熔爐中央垂直軸的傾斜孔洞116係以機械製造至頂盤112，因此，在孔洞116中沒有垂直的路徑延伸通過平行於熔爐中央軸的頂盤112。孔洞116的橫切面可以為圓形，並且鑽穿過頂盤112。因此，掉落自鐘形罩16之半球形頂蓋18的微粒可能掉落並且黏附於頂盤112頂部或傾斜孔洞116的下部表面118上。如同先前所述，製程氣體通常向上流動，也就是通過傾斜孔洞116之通常的向上方向，因此，其氣流傾向於攜帶微粒離開內襯20的內部。
參照第6圖，乃繪示本發明之一相關第五實施例的內襯遮蓋120，並與第5圖相似。其包括複數鋸齒狀孔洞延伸通過頂盤並且具有在頂盤112中部之相對傾斜方向的孔洞之間具有一劇烈的轉彎。孔洞122的橫切面可以為圓形，並且鑽穿自頂盤112的任一側至接近中部時交會。在第5或6圖所示之實施例中，附屬框邊114可為一通常環狀的凹口所替換，該凹口位於下部外部周邊，用以提供在內襯20頂部上相似的排列。
參照第7圖，乃繪示本發明一相似實施例之內襯遮蓋130，其包括一通常為盤型平面的頂盤132，此頂盤132具有一下部外部的周邊凹口134，用以支撐並且在內襯20等部上排列成線。頂盤132亦包括通過其上的複數垂直孔洞136，用以提供內襯20內外側之間的液體交流。垂直孔洞136佔據內襯20頂部之一小部分表面，其比例不超過10%，且最佳者係小於5%。然而，為了不過度妨礙液體的流動，孔洞136應該佔據內襯20頂部表面至少0.5%，且最佳者係至少1%。這些比例可以擇一地以遮蓋本身的橫切面來表示。再者，孔洞136的橫切面可以為圓形並且鑽穿。掉落自半球形頂蓋的微粒大部分襲擊頂盤132頂部表面之未鑽孔的部份，並且黏附在哪裡。這些掉落在孔洞136區域的微粒遇到通過孔洞136之增強的氣流，一些較重的掉落微粒可依然通過孔洞134掉落並且進入製程空間。然而，其數量在一開放式內襯頂部的設計下會大量降低。
就一全矽的熱區而言，遮蓋部分最好係相同的矽部分，可以用於係塔體及內襯的原生多晶矽，結合用於塔體及內襯之相同的複合SOD/矽黏著劑。然而，其他種類的矽例如Czochralski及cast silicon亦可在製程中做為替代而不會有太多的影響。遮蓋不只是由純物質所構成，而且在遮蓋與支撐的內襯間具有一最小的熱膨脹差異。大型的矽頂盤，尤其是300mm製程所需者，可以由多數較小的矽棒(silicon bars)，透過黏著劑(旋塗式玻璃及矽粉的複合物)於其側邊的連鎖接合而結合在一起所形成，請參照前述之Reese等人的專利。這樣的做法可以使得以非常純之原生多晶矽製造大型遮蓋的商業製造變得可能。
然而，本發明並不侷限於形成塔體、內襯及遮蓋的矽部。本發明可以應用於其他物質例如石英及碳化矽，包括矽滲入(silicon－impregnated)的碳化矽，最佳者係具有一微粒產生少於熔爐的頂蓋或其他部分的組成。惟最佳者仍以內襯及遮蓋具有相同組成以消除差異性熱膨脹，以及加熱及冷卻時遮蓋對於內襯的摩擦。
10．．．熔爐
12．．．加熱器筒
14．．．加熱線圈
16．．．鐘形罩
18．．．半球形頂蓋
20．．．內襯
22．．．塔體
24．．．基座
26．．．支腳
28．．．頂盤
30．．．底盤
32．．．溝槽
34．．．晶圓
36．．．氣體注入器
38．．．氣體排口
40．．．遮蓋
42．．．頂盤
44．．．中央孔洞
46．．．底板
48．．．側壁
50．．．擋孔
51．．．遮蓋
52．．．遮蓋盤
54．．．框邊
56．．．擋件
58．．．中央口
60．．．通道
62．．．底板件
64．．．框邊
66．．．裂口
68．．．裂口
70．．．中央孔洞
72．．．榫眼
80．．．遮蓋
82．．．頂盤
84．．．凹口
86．．．接嘴
88．．．框邊
90．．．杯狀構造
92．．．側壁
94．．．底部
96．．．孔洞
98．．．罩蓋
100．．．凸緣
102．．．通道
112．．．頂盤
114．．．附屬框邊
116．．．孔洞
122．．．孔洞
132．．．頂盤
134．．．凹口
第1圖係一熱製程熔爐的橫切面圖，其中包括該熱製程熔爐的不同部分以及本發明之一實施例。
第2圖係一內襯遮蓋的剖面立體圖，其係依據本發明所述之一內襯遮蓋之一第二實施例。
第3、4圖係一內襯遮蓋的剖面立體，其係依據本發明所述之一內襯遮蓋之一第三實施例。
第5、6及7圖係內襯遮蓋的橫切面圖，其分別係依據本發明所述之一內襯遮蓋之一第四、第五及第六實施例。
10．．．熔爐
12．．．加熱器筒
14．．．加熱線圈
16．．．鐘形罩
18．．．半球形頂蓋
20．．．內襯
22．．．塔體
24．．．基座
26．．．支腳
28．．．頂盤
30．．．底盤
32．．．溝槽
34．．．晶圓
36．．．氣體注入器
38．．．氣體排口
40．．．遮蓋
42．．．頂盤
44．．．中央孔洞
46．．．底板
48．．．側壁
50．．．擋孔
Claims (17)
- 一種用於一熱製程熔爐的內襯組件，至少包含：一大致管狀內襯，具有沿著一中央軸而延伸之複數邊，用以容納一塔體，其中該塔體於一水平方位支撐複數晶圓；以及一位於該內襯之一頂部上之遮蓋，該遮蓋包含一碟形平盤，且該遮蓋具有複數通道，該些通道沿著複數通道軸通過該遮蓋，該些通道軸至少部分向該中央軸傾斜，其中該些通道係以一或多個傾斜角度鑽穿於該碟形平盤中。
- 如申請專利範圍第1項所述之內襯組件，其中該管狀內襯包含複數結合在一起的側板。
- 如申請專利範圍第1項所述之內襯組件，其中該遮蓋係未固定於該內襯。
- 如申請專利範圍第1項所述之內襯組件，其中該遮蓋係固定於該內襯。
- 如申請專利範圍第1項所述之內襯組件，其中該些通道之至少一部分係垂直延伸至該中央軸。
- 如申請專利範圍第1項所述之內襯組件，其中該遮蓋於該塔體之一頂盤之一中央孔洞內係部分安置，該塔體係固 定於該塔體之複數支腳，該些晶圓被支撐在該些支腳上。
- 如申請專利範圍第1項所述之內襯組件，其中該遮蓋包含一外部環狀且平面部分及一中央部分，該中央部分安置於該環狀部分之一中央孔洞並且包含該些通道。
- 如申請專利範圍第1-7項中任一項所述之內襯組件，其中該內襯及該遮蓋係由至少99%的矽所構成。
- 如申請專利範圍第1-7項中任一項所述之內襯組件，其中該內襯及該遮蓋包含至少一多成分之含矽物質，該含矽物質係選自於石英及碳化矽所組成的族群。
- 一種用於一熱製程熔爐的內襯組件，其包含：一大致上管狀之內襯，具有沿著一中央軸而延伸之複數邊，用以容納一塔體，其中該塔體於一水平方位支撐複數晶圓；以及一位於該內襯之一頂部上之遮蓋，具有複數鋸齒狀通道，該些鋸齒狀通道通過該遮蓋，其中該些鋸齒狀通道在該遮蓋之一頂盤中相對傾斜方向之孔洞的部分之間具有一劇烈的轉彎。
- 如申請專利範圍第10項所述之內襯組件，其中該些通道至少部分沿著一傾向該中央軸的方向延伸。
- 如申請專利範圍第10或11項所述之內襯組件，其中該內襯及該遮蓋皆包含一多成分之含矽物質，該含矽物質係選自於石英及碳化矽所組成的族群。
- 如申請專利範圍第10或11項所述之內襯組件，其中該內襯及該遮蓋皆包含矽構成的物質。
- 一種阻擋用的內襯遮蓋，該內襯遮蓋安置於一管狀內襯的頂部，以於該內襯內容納一基材支撐塔體，其包含：一頂盤，沿著一軸線於一平面上延伸且具有複數周邊以被支撐在該內襯上，並且具有一中央孔洞；一阻擋組件，具有一框邊、一大致管狀壁與複數水平孔洞且在其底部支撐一連續底板，該框邊於該阻擋組件的頂部安置於該中央孔洞，該大致管狀壁開口於該阻擋組件的頂部，而該阻擋組件的頂部係位於該頂盤之一平面內，該大致管狀壁平行於該軸線而延伸，該複數水平孔洞通過該阻擋組件，該連續底板垂直於該軸線而延伸。
- 如申請專利範圍第14項所述之內襯遮蓋，其中該阻擋組件更包含一環狀凸緣，該環狀凸緣係連結於該連續底板之一外部分並向上朝該頂盤延伸，且在該環狀凸緣與相鄰於該複數水平孔洞之該大致管狀壁間產生一環狀垂直通道，以及位在該環狀凸緣與與該頂盤之一底部間之一連結 環狀水平通道。
- 如申請專利範圍第14或15項所述之內襯遮蓋，其中該頂盤及該阻擋組件皆包含一多成分之含矽物質，該含矽物質係選自於石英及碳化矽所組成的族群。
- 如申請專利範圍第14或15項所述之內襯遮蓋，其中該頂盤及該阻擋組件皆包含矽構成的物質。
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Also Published As
| Publication number | Publication date |
|---|---|
| US7736437B2 (en) | 2010-06-15 |
| US20070181066A1 (en) | 2007-08-09 |
| JP5119258B2 (ja) | 2013-01-16 |
| WO2008054692B1 (en) | 2008-07-10 |
| WO2008054692A1 (en) | 2008-05-08 |
| KR20090082444A (ko) | 2009-07-30 |
| KR101167664B1 (ko) | 2012-07-20 |
| JP2010508656A (ja) | 2010-03-18 |
| TW200830451A (en) | 2008-07-16 |
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