CN101605930B - n型导电性氮化铝半导体结晶及其制造方法 - Google Patents

n型导电性氮化铝半导体结晶及其制造方法 Download PDF

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Publication number
CN101605930B
CN101605930B CN2008800012459A CN200880001245A CN101605930B CN 101605930 B CN101605930 B CN 101605930B CN 2008800012459 A CN2008800012459 A CN 2008800012459A CN 200880001245 A CN200880001245 A CN 200880001245A CN 101605930 B CN101605930 B CN 101605930B
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substrate
aluminum nitride
nitride semiconductor
semiconductor crystal
type conductive
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CN101605930A (zh
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纐缬明伯
熊谷义直
永岛彻
高田和哉
柳裕之
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Tokuyama Corp
Tokyo University of Agriculture
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Tokyo University of Agriculture
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2008800012459A 2007-02-07 2008-02-05 n型导电性氮化铝半导体结晶及其制造方法 Active CN101605930B (zh)

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JP027732/2007 2007-02-07
JP2007027732 2007-02-07
PCT/JP2008/052207 WO2008096884A1 (ja) 2007-02-07 2008-02-05 ｎ型導電性窒化アルミニウム半導体結晶及びその製造方法

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CN101605930B true CN101605930B (zh) 2012-07-04

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US (1) US8129208B2 (ja)
EP (2) EP2725124B1 (ja)
JP (1) JP5234968B2 (ja)
KR (1) KR101075513B1 (ja)
CN (1) CN101605930B (ja)
CA (1) CA2677414C (ja)
WO (1) WO2008096884A1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578398A (zh) 2007-03-02 2009-11-11 国立大学法人东京农工大学 第ⅲ族氮化物晶体的制造方法
JP5324110B2 (ja) * 2008-01-16 2013-10-23 国立大学法人東京農工大学 積層体およびその製造方法
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
JP2011213557A (ja) * 2010-04-01 2011-10-27 Hitachi Cable Ltd 導電性ｉｉｉ族窒化物単結晶基板の製造方法
KR101081462B1 (ko) * 2010-08-03 2011-11-08 주식회사 야스 유도가열 방식을 적용한 박막형 화합물 반도체 태양광 소자 제작 장치 및 방법
US9646827B1 (en) * 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
JP6301259B2 (ja) * 2011-11-21 2018-03-28 サン‐ゴバン、クリストー、エ、デテクトゥールＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｒｉｓｔａｕｘ ＆ Ｄｅｔｅｃｔｅｕｒｓ 半導体基板および形成方法
KR101821301B1 (ko) * 2011-12-22 2018-01-23 가부시키가이샤 도쿠야마 질화 알루미늄 단결정 기판 및 이들의 제조 방법
JP5943345B2 (ja) * 2012-07-27 2016-07-05 東京エレクトロン株式会社 ＺｎＯ膜の製造装置及び製造方法
FR3005784B1 (fr) * 2013-05-14 2016-10-07 Aledia Dispositif optoelectronique et son procede de fabrication
JP5818853B2 (ja) * 2013-10-15 2015-11-18 株式会社トクヤマ ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス
US9806205B2 (en) 2014-08-01 2017-10-31 Tokuyama Corporation N-type aluminum nitride monocrystalline substrate
JP6934473B2 (ja) * 2016-06-24 2021-09-15 スタンレー電気株式会社 Ｉｉｉ族窒化物半導体発光素子
CN109643645B (zh) 2016-08-31 2023-02-28 国立研究开发法人科学技术振兴机构 化合物半导体及其制造方法以及氮化物半导体
KR102517883B1 (ko) * 2017-06-01 2023-04-04 재팬 사이언스 앤드 테크놀로지 에이전시 화합물 반도체 및 그 제조 방법
CN111364017B (zh) * 2020-04-20 2022-04-22 国家纳米科学中心 一种氮化铝薄膜及其制备方法和用途

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1835252A (zh) * 2005-03-15 2006-09-20 日立电线株式会社 半导体发光元件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565704A (en) * 1967-12-19 1971-02-23 Westinghouse Electric Corp Aluminum nitride films and processes for producing the same
JPH11260534A (ja) * 1998-01-09 1999-09-24 Ngk Insulators Ltd 加熱装置およびその製造方法
JP3279528B2 (ja) 1998-09-07 2002-04-30 日本電気株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法
JP2000290767A (ja) * 1999-02-04 2000-10-17 Ngk Insulators Ltd アルミニウム含有部材の製造方法及びアルミニウム含有部材
JP4312357B2 (ja) * 2000-08-02 2009-08-12 日本碍子株式会社 金属アルミニウム含有基体の窒化処理方法
US6852161B2 (en) * 2000-08-18 2005-02-08 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP4078858B2 (ja) 2002-03-19 2008-04-23 松下電器産業株式会社 光増幅回路
JP2003273398A (ja) 2002-03-20 2003-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体材料およびそれを用いた半導体装置
JP3803788B2 (ja) 2002-04-09 2006-08-02 農工大ティー・エル・オー株式会社 Ａｌ系ＩＩＩ−Ｖ族化合物半導体の気相成長方法、Ａｌ系ＩＩＩ−Ｖ族化合物半導体の製造方法ならびに製造装置
EP1709670B1 (en) * 2004-01-26 2012-09-12 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
JP4765025B2 (ja) 2004-02-05 2011-09-07 農工大ティー・エル・オー株式会社 ＡｌＮエピタキシャル層の成長方法及び気相成長装置
US7622200B2 (en) * 2004-05-21 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting element
JP2006240895A (ja) 2005-03-01 2006-09-14 Tokyo Univ Of Agriculture & Technology アルミニウム系窒化物結晶の製造方法および積層基板
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
JP4476174B2 (ja) 2005-06-02 2010-06-09 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法および結晶積層基板
CN101578398A (zh) * 2007-03-02 2009-11-11 国立大学法人东京农工大学 第ⅲ族氮化物晶体的制造方法
DE102008017039A1 (de) * 2007-04-05 2008-10-09 Koito Manufacturing Co., Ltd. Leuchtstoff
JP5324110B2 (ja) * 2008-01-16 2013-10-23 国立大学法人東京農工大学 積層体およびその製造方法
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
US8507304B2 (en) * 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1835252A (zh) * 2005-03-15 2006-09-20 日立电线株式会社 半导体发光元件

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
1 s&#8722
1 s&#8722;1)".《APPLIED PHYSICS LETTERS》.2004,第85卷(第20期),4672-4674. *
1)".《APPLIED PHYSICS LETTERS》.2004,第85卷(第20期),4672-4674.
JP特开2000-91234A 2000.03.31
JP特开2006-240895A 2006.09.14
JP特开2006-335607A 2006.12.14
O. Kovalenkov等."Thick AlN layers grown by HVPE".《JOURNAL OF CRYSTAL GROWTH》.2005,第281卷87-92.
Yoshitaka Taniyasu等."Electrical conduction properties of n-type Si-doped AlN with high electron mobility(>100 cm2 V&#8722

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CN101605930A (zh) 2009-12-16
EP2123802A1 (en) 2009-11-25
KR101075513B1 (ko) 2011-10-21
JPWO2008096884A1 (ja) 2010-05-27
EP2725124B1 (en) 2015-11-04
CA2677414A1 (en) 2008-08-14
WO2008096884A1 (ja) 2008-08-14
US8129208B2 (en) 2012-03-06
EP2123802A4 (en) 2013-09-18
US20100320462A1 (en) 2010-12-23
KR20090106386A (ko) 2009-10-08
JP5234968B2 (ja) 2013-07-10
EP2725124A1 (en) 2014-04-30
CA2677414C (en) 2012-12-18

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