CN101599502B - 发光系统 - Google Patents

发光系统 Download PDF

Info

Publication number
CN101599502B
CN101599502B CN200910139562.3A CN200910139562A CN101599502B CN 101599502 B CN101599502 B CN 101599502B CN 200910139562 A CN200910139562 A CN 200910139562A CN 101599502 B CN101599502 B CN 101599502B
Authority
CN
China
Prior art keywords
electrode
layer
luminescent
luminescent substance
insulating barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200910139562.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN101599502A (zh
Inventor
濑尾哲史
荒井康行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101599502A publication Critical patent/CN101599502A/zh
Application granted granted Critical
Publication of CN101599502B publication Critical patent/CN101599502B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/814Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80516Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133604Direct backlight with lamps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8312Electrodes characterised by their shape extending at least partially through the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Planar Illumination Modules (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Liquid Crystal (AREA)
CN200910139562.3A 2004-06-03 2005-06-03 发光系统 Expired - Fee Related CN101599502B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-166041 2004-06-03
JP2004166041 2004-06-03
JP2004166041 2004-06-03

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200510076018.0A Division CN100527463C (zh) 2004-06-03 2005-06-03 发光系统

Publications (2)

Publication Number Publication Date
CN101599502A CN101599502A (zh) 2009-12-09
CN101599502B true CN101599502B (zh) 2012-07-04

Family

ID=35448486

Family Applications (4)

Application Number Title Priority Date Filing Date
CN200910139562.3A Expired - Fee Related CN101599502B (zh) 2004-06-03 2005-06-03 发光系统
CN200910139560.4A Expired - Fee Related CN101599533B (zh) 2004-06-03 2005-06-03 发光系统
CN200510076018.0A Expired - Fee Related CN100527463C (zh) 2004-06-03 2005-06-03 发光系统
CN200910139561.9A Expired - Fee Related CN101599501B (zh) 2004-06-03 2005-06-03 发光系统

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN200910139560.4A Expired - Fee Related CN101599533B (zh) 2004-06-03 2005-06-03 发光系统
CN200510076018.0A Expired - Fee Related CN100527463C (zh) 2004-06-03 2005-06-03 发光系统
CN200910139561.9A Expired - Fee Related CN101599501B (zh) 2004-06-03 2005-06-03 发光系统

Country Status (3)

Country Link
US (4) US7733441B2 (https=)
JP (9) JP4999890B2 (https=)
CN (4) CN101599502B (https=)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027914B2 (ja) * 2004-05-21 2007-12-26 株式会社半導体エネルギー研究所 照明装置及びそれを用いた機器
US7733441B2 (en) * 2004-06-03 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material
EP1819202B1 (en) * 2006-02-10 2011-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8142601B2 (en) * 2006-03-31 2012-03-27 Pioneer Corporation Method for manufacturing low resistance substrate
DE102006052029B4 (de) * 2006-09-22 2020-01-09 Osram Oled Gmbh Lichtemittierende Vorrichtung
DE102007004509A1 (de) * 2006-11-23 2008-05-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beleuchtungselement und Verfahren zu seiner Herstellung
DE102008020816B4 (de) 2008-02-29 2019-10-10 Osram Oled Gmbh Organische Leuchtdiode, flächiges, optisch aktives Element mit einer Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode
EP2120275A3 (en) * 2008-05-16 2012-08-22 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, lighting apparatus, light-emitting device, electronic appliance, and display
JP5655567B2 (ja) * 2008-10-06 2015-01-21 旭硝子株式会社 電子デバイス用基板、その製造方法、これを用いた電子デバイス、その製造方法及び有機led素子用基板
DE102008051048A1 (de) * 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
JP5377985B2 (ja) * 2009-01-13 2013-12-25 株式会社東芝 半導体発光素子
US20100285358A1 (en) 2009-05-07 2010-11-11 Amprius, Inc. Electrode Including Nanostructures for Rechargeable Cells
US10096817B2 (en) 2009-05-07 2018-10-09 Amprius, Inc. Template electrode structures with enhanced adhesion characteristics
US11996550B2 (en) 2009-05-07 2024-05-28 Amprius Technologies, Inc. Template electrode structures for depositing active materials
US8137148B2 (en) * 2009-09-30 2012-03-20 General Electric Company Method of manufacturing monolithic parallel interconnect structure
WO2011060017A2 (en) 2009-11-11 2011-05-19 Amprius, Inc Intermediate layers for electrode fabrication
EP2333859B1 (en) * 2009-12-03 2017-09-13 Novaled GmbH A method for forming an organic light emitting diode
KR101082162B1 (ko) * 2009-12-03 2011-11-09 삼성모바일디스플레이주식회사 터치 스크린 패널 일체형 평판표시장치
US20110143019A1 (en) 2009-12-14 2011-06-16 Amprius, Inc. Apparatus for Deposition on Two Sides of the Web
TW201138180A (en) * 2010-01-05 2011-11-01 Koninkl Philips Electronics Nv A method of manufacturing an OLED device
US9780365B2 (en) 2010-03-03 2017-10-03 Amprius, Inc. High-capacity electrodes with active material coatings on multilayered nanostructured templates
JP5918150B2 (ja) 2010-03-03 2016-05-18 アンプリウス、インコーポレイテッド 活性材料を堆積させるためのテンプレート電極構造
KR101642117B1 (ko) * 2010-04-22 2016-07-25 삼성디스플레이 주식회사 유기 발광 소자
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP2012009420A (ja) 2010-05-21 2012-01-12 Semiconductor Energy Lab Co Ltd 発光装置及び照明装置
WO2012005540A2 (ko) * 2010-07-08 2012-01-12 주식회사 엘지화학 유기 발광 소자 및 이의 제조방법
WO2012014759A1 (en) 2010-07-26 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and manufacturing method of light-emitting device
JP5829070B2 (ja) * 2010-07-26 2015-12-09 株式会社半導体エネルギー研究所 発光装置、照明装置、及び発光装置の作製方法
KR101741687B1 (ko) * 2010-09-24 2017-05-31 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조 방법
CN103250266B (zh) * 2010-10-21 2016-06-15 Oled工厂有限责任公司 具有亮度分布控制装置的oled器件
CN103190199B (zh) * 2010-11-30 2016-03-02 株式会社钟化 有机el装置
JP5827885B2 (ja) 2010-12-24 2015-12-02 株式会社半導体エネルギー研究所 発光装置及び照明装置
KR20120090595A (ko) * 2011-02-08 2012-08-17 삼성전자주식회사 유기 발광 소자
KR20120092019A (ko) 2011-02-09 2012-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
KR101890876B1 (ko) 2011-03-23 2018-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
TWI555436B (zh) 2011-04-08 2016-10-21 半導體能源研究所股份有限公司 發光裝置及其製造方法
KR101758763B1 (ko) * 2011-07-25 2017-07-18 한국전자통신연구원 발광 소자 및 이를 제조하는 방법
US8912547B2 (en) 2012-01-20 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and semiconductor device
CN104636669B (zh) * 2013-11-13 2018-08-14 华为技术有限公司 一种数据管理的方法及设备
WO2015111181A1 (ja) * 2014-01-24 2015-07-30 パイオニアOledライティングデバイス株式会社 発光装置
CA2938974C (en) 2014-02-07 2023-08-22 Gojo Industries, Inc. Compositions and methods with efficacy against spores and other organisms
US9923201B2 (en) 2014-05-12 2018-03-20 Amprius, Inc. Structurally controlled deposition of silicon onto nanowires
DE102014111037B4 (de) * 2014-08-04 2017-06-01 Osram Oled Gmbh Verfahren zur Herstellung einer organischen Leuchtdiode und organische Leuchtdiode
WO2016042921A1 (ja) * 2014-09-16 2016-03-24 コニカミノルタ株式会社 発光装置
FI128685B (en) * 2016-09-27 2020-10-15 Teknologian Tutkimuskeskus Vtt Oy Layered device and its manufacturing method
EP3928370A4 (en) 2019-02-22 2022-11-09 Amprius, Inc. COMPOSITION MODIFIED SILICON COATINGS FOR USE IN A LITHIUM ION BATTERY ANODIDE
CN111505868A (zh) * 2020-05-11 2020-08-07 Tcl华星光电技术有限公司 背光模组和显示面板
CN115275058B (zh) * 2022-07-29 2024-01-19 武汉华星光电半导体显示技术有限公司 显示面板及显示终端

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1703938A (zh) * 2001-12-18 2005-11-30 精工爱普生株式会社 发光装置、其制造方法、电光学装置和电子仪器

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62272499A (ja) * 1986-05-21 1987-11-26 日産自動車株式会社 薄膜elパネル
JPS63141293A (ja) * 1986-12-01 1988-06-13 日本板硝子株式会社 Elパネル
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2755281B2 (ja) * 1992-12-28 1998-05-20 富士電機株式会社 薄膜太陽電池およびその製造方法
TW364275B (en) * 1996-03-12 1999-07-11 Idemitsu Kosan Co Organic electroluminescent element and organic electroluminescent display device
JPH09306668A (ja) * 1996-05-13 1997-11-28 Hokuriku Electric Ind Co Ltd El素子とその製造方法
US5905275A (en) * 1996-06-17 1999-05-18 Kabushiki Kaisha Toshiba Gallium nitride compound semiconductor light-emitting device
US6479941B1 (en) * 1998-10-30 2002-11-12 3M Innovative Properties Company Electroluminescent device and method for the production of the same
TW471239B (en) * 1999-01-22 2002-01-01 Koninkl Philips Electronics Nv Electroluminescent display screen for displaying fixed and segmented patterns, and method of manufacturing such an electroluminescent display screen
JP2000268980A (ja) * 1999-03-19 2000-09-29 Toyota Central Res & Dev Lab Inc 有機電界発光素子
JP2002540458A (ja) * 1999-03-23 2002-11-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 表示装置及びこのような表示装置を製造する方法
KR100694959B1 (ko) * 1999-04-02 2007-03-14 이데미쓰 고산 가부시키가이샤 유기 전기 발광 디스플레이 장치 및 그의 제조 방법
US6208791B1 (en) * 1999-04-19 2001-03-27 Gemfire Corporation Optically integrating pixel microstructure
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US7576496B2 (en) 1999-12-22 2009-08-18 General Electric Company AC powered OLED device
US20020190661A1 (en) 2000-01-27 2002-12-19 General Electric Company AC powered oled device
US7768210B2 (en) 1999-12-22 2010-08-03 General Electric Company Hybrid electroluminescent devices
US6566808B1 (en) * 1999-12-22 2003-05-20 General Electric Company Luminescent display and method of making
US6515417B1 (en) 2000-01-27 2003-02-04 General Electric Company Organic light emitting device and method for mounting
US6700322B1 (en) * 2000-01-27 2004-03-02 General Electric Company Light source with organic layer and photoluminescent layer
TWI273722B (en) 2000-01-27 2007-02-11 Gen Electric Organic light emitting device and method for mounting
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機el発光装置およびその製造方法
US6661029B1 (en) * 2000-03-31 2003-12-09 General Electric Company Color tunable organic electroluminescent light source
US6777871B2 (en) 2000-03-31 2004-08-17 General Electric Company Organic electroluminescent devices with enhanced light extraction
TW461228B (en) * 2000-04-26 2001-10-21 Ritdisplay Corp Method to manufacture the non-photosensitive polyimide pixel definition layer of organic electro-luminescent display panel
US6608449B2 (en) * 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
US6630785B1 (en) 2000-05-30 2003-10-07 Ritdisplay Corporation Surface treatment process for fabricating a panel of an organic light emitting device
US6350633B1 (en) * 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6864628B2 (en) * 2000-08-28 2005-03-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound
JP2002203674A (ja) * 2000-10-30 2002-07-19 Fuji Name Plate Kk 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法
JP4711273B2 (ja) * 2000-11-20 2011-06-29 スタンレー電気株式会社 照明付き液晶表示装置
JP2002170688A (ja) * 2000-11-30 2002-06-14 Victor Co Of Japan Ltd 有機エレクトロルミネッセンス素子
JP2002343578A (ja) * 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置
JP2002343562A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
JP2002343580A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
JP4997667B2 (ja) * 2001-05-31 2012-08-08 凸版印刷株式会社 透明導電性フィルム及びその製造方法、並びにそれを用いたエレクトロルミネッセンス素子
JP2003133080A (ja) * 2001-10-30 2003-05-09 Fuji Photo Film Co Ltd 発光素子
SG142163A1 (en) * 2001-12-05 2008-05-28 Semiconductor Energy Lab Organic semiconductor element
SG143063A1 (en) * 2002-01-24 2008-06-27 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP3910864B2 (ja) * 2002-03-04 2007-04-25 ローム株式会社 有機el表示パネルおよびその製造方法
EP1343206B1 (en) * 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP3980918B2 (ja) * 2002-03-28 2007-09-26 株式会社東芝 アクティブマトリクス基板及びその製造方法、表示装置
JP4047631B2 (ja) * 2002-05-28 2008-02-13 エルピーダメモリ株式会社 王冠構造のキャパシタを有する半導体集積回路装置およびその製造方法
JP3864851B2 (ja) * 2002-06-03 2007-01-10 株式会社豊田自動織機 面状発光装置
TWI272874B (en) * 2002-08-09 2007-02-01 Semiconductor Energy Lab Organic electroluminescent device
JP2004134282A (ja) 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd 照明装置及びそれを用いた画像読取装置
TWI313069B (en) * 2002-11-08 2009-08-01 Epistar Corporatio Light emitting diode and method of making the same
JP4077756B2 (ja) * 2003-04-11 2008-04-23 ローム株式会社 平面表示パネルの製造方法
JP4600284B2 (ja) * 2003-10-28 2010-12-15 住友金属鉱山株式会社 透明導電積層体とその製造方法及び透明導電積層体を用いたデバイス
JP2005302508A (ja) * 2004-04-12 2005-10-27 Fuji Photo Film Co Ltd 透明導電性シートおよびそれを用いたエレクトロルミネッセンス素子
JP4027914B2 (ja) * 2004-05-21 2007-12-26 株式会社半導体エネルギー研究所 照明装置及びそれを用いた機器
JP4646702B2 (ja) * 2004-06-03 2011-03-09 株式会社半導体エネルギー研究所 照明装置及びその作製方法
US7733441B2 (en) * 2004-06-03 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1703938A (zh) * 2001-12-18 2005-11-30 精工爱普生株式会社 发光装置、其制造方法、电光学装置和电子仪器

Also Published As

Publication number Publication date
JP4943545B2 (ja) 2012-05-30
US8847479B2 (en) 2014-09-30
CN100527463C (zh) 2009-08-12
US9099668B2 (en) 2015-08-04
CN101599533B (zh) 2012-04-25
US20140374782A1 (en) 2014-12-25
JP2014123569A (ja) 2014-07-03
CN101599502A (zh) 2009-12-09
JP2015084335A (ja) 2015-04-30
JP2009224809A (ja) 2009-10-01
US20100025716A1 (en) 2010-02-04
CN101599533A (zh) 2009-12-09
JP6290996B2 (ja) 2018-03-07
CN1705418A (zh) 2005-12-07
JP2017191783A (ja) 2017-10-19
CN101599501A (zh) 2009-12-09
JP5222992B2 (ja) 2013-06-26
JP6244337B2 (ja) 2017-12-06
JP2015233011A (ja) 2015-12-24
JP2012054251A (ja) 2012-03-15
US20100026179A1 (en) 2010-02-04
JP2011091062A (ja) 2011-05-06
CN101599501B (zh) 2011-06-15
JP6438528B2 (ja) 2018-12-12
JP2013016816A (ja) 2013-01-24
US8582058B2 (en) 2013-11-12
JP2016192419A (ja) 2016-11-10
US20050270464A1 (en) 2005-12-08
US7733441B2 (en) 2010-06-08
JP4999890B2 (ja) 2012-08-15

Similar Documents

Publication Publication Date Title
CN101599502B (zh) 发光系统
JP4027914B2 (ja) 照明装置及びそれを用いた機器
JP4646702B2 (ja) 照明装置及びその作製方法
JP4906137B2 (ja) 照明装置
JP4437558B2 (ja) 照明装置の作製方法
JP2008218320A (ja) 有機電界発光素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120704