201138180 六、發明說明： 【發明所屬之技術領域】 本發明描述一種製造一 OLED裝置之方法。本發明係進 一步描述此一 OLED裝置。 【先前技術】 ..一種有機發光二極體（OLED)裝置係藉由累積一系列層 而製ia ’该荨層通常包括一主動層或有機層，其被炎於一 陽極與一陰極之間。該有機層或功能層（其實際上可能包 括若干層）通常統稱為「主動層_1’由於當一電流自該陽極 流動至该陰極時，正是在此主動層中產生光。對於用於平 板顯示器或照射裝置中之〇LED而言，該陽極及陰極一般 係自該裝置之相同側（例如，自該發光侧）而接達。因此， 一第一階段包括在一載體（諸如玻璃）上產生一導電塗層之 電氣分離之圖案 所希望之圖案（其包括陽極區域及陰極201138180 VI. Description of the Invention: [Technical Field of the Invention] The present invention describes a method of manufacturing an OLED device. The present invention further describes such an OLED device. [Prior Art] An organic light-emitting diode (OLED) device is formed by accumulating a series of layers. The germanium layer usually includes an active layer or an organic layer which is inflamed between an anode and a cathode. . The organic or functional layer (which may actually comprise several layers) is commonly referred to collectively as "active layer_1" because it is generated in this active layer when a current flows from the anode to the cathode. In the case of a flat panel display or a germanium LED in an illumination device, the anode and cathode are typically accessed from the same side of the device (eg, from the light emitting side). Thus, a first stage includes a carrier (such as glass). a pattern desired to produce an electrically separated pattern of a conductive coating (including an anode region and a cathode)
層（通^括小分子有機材料）係、藉由在真空中之熱蒸錢而Layer (through small molecule organic materials), by steaming money in a vacuum
必須使用一陰影遮罩，以 。再次， 示雙返域中之該有機材料之沈積，例 f影遮罩，使得至少陰極接觸件不被塗 通常亦經保護免除該塗層。在一下一步 真空熱蒸鍍程序中沈積該陰極。再 由於該有機層及該陰極 以確保該陰極及該陽極不會短路。 之塗佈區域不同，必須在兩個程序 152776.doc 201138180 中使用-組不同之遮罩。在沈積期間，該等陰影遮罩用材 料塗佈。㈣高精確度陰影遮罩昂責，且由㈣等陰Μ 罩在該等沈積步驟之後必須予以替換或清潔，此類型2製 造方法成本昂貴。此外，料陰影遮罩必須極精確地對 準’以避免使該等電極短路之風險。 在完成該等有機及陰極沈積程序之後，必須囊封★玄妒 置，以保護該有機層免受濕氣。此囊封可以多種方式=實 行。例如，可使用具有低滲水性之黏膠將一玻 至該裝置。在另一方法中，可用在一進一步之沈積步：用中 應用之一合適之膜塗佈該裝置之外表面。為了容許電氣接 達陰極及陽極，此等必須同時延伸超過通常於該裝置之不 同側之密封線。然而，該等電極在該裝置之兩個或更多側 上凸出之事實意味著：該裝置之此等部分實際上包括非發 射表面區域，其等在多種應用中可相當不需要。 先前技術之OLED之小尺寸主要是該陽極材料之受限導 電性之一結果《需要將此等〇LED保持很小，使得其等不 易被察覺且亦使得盡可能多之光可離開該裝置。然而由 於此等元件攜載用於該整個OLED區域之電流，現實裝置 尺寸實際上受到約束。可藉由當前技術水準之製造技術而 不使用金屬格線或其他措施來增強該陽極之導電性而達成 之最大可行性OLED裝置區域被限制為約5 cmx5 cme為了 獲得具有一較大總發射區域之一裝置，需要併入一金屬網 格’或可「平舖」若干裝置。然而，藉由該等個別「發光 塊」之間之該等電極佔用之額外非發射區域意味著該平鋪 152776.doc 201138180 用之區域而分 此缺點限制可 並非無縫。相鄰之裝置係藉由該等電極所佔 離’且此非發射區域可輕易被察覺。再次， 使用此等OLED裝置之應用。 在改良發射區域與非發射區域之間之比率（即容許該囊 封延伸至該裝置之邊緣）之一方法中，「頂卹 ^ τ 頂0Ρ」電極（通常該 陰極）係通過該囊封而接觸，例如，通過該罩蓋（使用已被 接受之慣例，術言吾「頂部」*「底部」分別係指一OLED 之罩蓋及基板側）而藉由金屬饋送。同樣地，為了自該頂 部側接觸該陽極，必須設立通過該陰極在該陽極與該罩蓋 上之電氣導電層之間之-連接。接著可例如藉由通過該蓋 中之類似於該陰極接觸件之電氣饋送而自該背側接觸該罩 蓋中之此等導電層。在陽極與該罩蓋之間產生一連接之最 簡便的方式係在實行該蒸汽沈積程序之前，該基板上已有 若干突起之金屬接觸件。該結構之導電材料或「通孔」應 由絕緣材料圍繞，以避免其與該陰極之間之一短路。在該 等有機層及陰極層之蒸汽沈積期間使用當前技術之製造技 術，必須使用一或多個陰影遮罩來保護該等金屬接觸件免 受塗佈。此一沈積程序需一高程度之精確性，以滿足最終 產品之品質準則。此外，由於該等陰影遮罩在該蒸汽沈積 步驟期間亦用材料塗佈且在每次使用之前需要清潔或更 換，其等之使用添加製造總成本。以此方式製作之通孔相 對較大’使得此一 OLED實在不可實用於需要一不中斷均 質發射表面之裝飾及照明目的。 因此’本發明之一目的在於提供一種製造一 OLED裝置 152776.doc -6 - 201138180 之改良方法，阻止上述之該等問題。 【發明内容】 此目的係藉由技術方案1之製造一 OLED裝置之方法且藉 由技術方案9之該OLED裝置而達成。 根據本發明，製造一 〇LED裝置之該方法包括下列步 驟：將一第一電極應用至一载體上，將一主動層應用至該 第一電極上，使得該主動層大體上均勻地覆蓋該第一電 極，及後續將一第二電極應用至該主動層，使得該第二電 極大體上均勻地覆蓋該主動層。該方法進一步包括在一開 口中暴露該第一電極之一接達區域之步驟，該開口係藉由 移除該第二電極之一區及該主動層之一對應區而製作，使 得該第一電極係可通過該開口而電氣接達。 此處，可按任何適當之順序來實行該等處理步驟。例 如’在一尤其直截了當之技術中’可首先應用該第一電 極、主動層及第二電極，且可接著藉由移除該第二電極之 若干區及該主動層之經燒蝕以暴露在該第一電極上之若干 接達區域之對應之下伏區而產生若干孔隙。在一替代性方 法中’可在一種兩個步驟之程序中產生一孔隙。在一第一 步驟中，可將該主動層應用至該第一電極，且該主動層之 對應於未來通孔之位置之若干區後續被切除或燒蝕以暴露 在該第一電極上之若干接達區域。接著，在—第二步驟 中’將該第二電極應用至該主動層’且該第二電極之該主 動層之下伏經移除區之上方之若干區亦被移除，以再次暴 露該等接達區域。 、 152776.doc 201138180 此一接達該第一電極之構件通常被稱為一「通孔。 處，一通孔係藉由移除該第二電極之一區及該主動層之一 下伏區域而製作。由於此等區可為極小，該等通孔可幾乎 看不見，使得使用此方法而製造之一 〇LED可適用於需、 高發射均質性之大面積應用。 要 由於該第一電極層可輕易通過該「頂部」層中之開口 電氣接達，且在該第二電極層之周圍可分佈任何數目之此 等開口，此意味著使用根據本發明之方法而製造之該 OLED裝置有利地表現—高亮度均f性即，實際上該發 射表面之不同區之間之亮度不存在差別。 最有利的是，根據本發明之製造〇LED裝置之該方法在 應用該OLED裝置之未來發射區域内之該等層時無需任何 成本昂貴或耗時之複雜陰影遮罩，因此使用此方法製造之 一裝置相較於一可比之先前技術裝置可便宜得多。 =據本發明，該QLED裝置包括—第—電極，其被應用 至一載體上；一主動層，其被應用至該第一電極上，使得 該主動層初始時完全覆蓋該第一電極；及一第二電極，其 被應用至3亥主動層上，使得該主動層初始時完全覆蓋該第 二電極。表達「經應用以初始時完全覆蓋」意味著在該 OLED之未來發射區域之界限内，一層經應用以完全且均 質地覆蓋先前層。根據本發明之該〇LED裝置進一步包括 接達區域其用於電氣接達該第二電極中之一開口内之 5第電極"亥開口包括該第二電極之一經移除區及該主 動層之一對應之經移除區，可通過該開口而接達該第一電 152776.doc 201138180 極’且其中該第一電極係僅藉由該主動層及/或自由空間 而與該第二電極電氣隔離。 根據本發明之該OLED裝置可具有一發射區域，其遠遠 大於可藉由先前技術之製造技術而達成之一發射區域，在 先前技術製造技術中，該陽極及陰極二者係自該裝置之一 邊緣而接達。由於可使最大發射〇LED區域極大，且實際 上僅受到所使用之製造設備所限制，可在該基板側上無平 鋪或金屬分路線及網格線之情形下而達成一大〇LED。具 有均質光品質之此一大OLED裝置可適用於各種不可使用 先刖技術OLED裝置之應用。然而，由於根據本發明之該 OLED裝置在該裝置之該等側上無需大的接達區域，一大 體上無縫之平鋪係可能，因此可藉由平鋪若.干此〇led裝 置以給予一陣列而裝配一更大之裝置。 附屬技術方案及後續之描述特別揭示本發明之有利之實 施例及特徵。 可取決於該第一 電極之結構而以若干方式暴露在該第一A shadow mask must be used. Again, the deposition of the organic material in the dual return domain is shown, such that at least the cathode contact is not coated and is typically protected from the coating. The cathode is deposited in a next vacuum thermal evaporation process. Further, the organic layer and the cathode ensure that the cathode and the anode are not short-circuited. The coating area is different and must be used in two programs 152776.doc 201138180 - different masks. The shadow masks are coated with material during deposition. (d) High-accuracy shadow masks are blamed, and must be replaced or cleaned by the (iv) and other yin masks after the deposition step. This type 2 manufacturing method is expensive. In addition, the shadow mask must be accurately aligned to avoid the risk of shorting the electrodes. After completion of the organic and cathodic deposition procedures, the xenon must be encapsulated to protect the organic layer from moisture. This encapsulation can be done in a variety of ways = practice. For example, a viscose having a low water permeability can be used to glass a device. In another method, the outer surface of the device can be coated in a further deposition step: using a suitable film. In order to allow electrical access to the cathode and anode, these must simultaneously extend beyond the seal lines typically on the different sides of the device. However, the fact that the electrodes protrude on two or more sides of the device means that such portions of the device actually include non-emissive surface regions, which are relatively undesirable in a variety of applications. The small size of prior art OLEDs is primarily one of the limited conductivities of the anode material. "The LEDs need to be kept small so that they are not readily noticeable and also allow as much light as possible to leave the device. However, the actual device size is actually constrained by the fact that these components carry current for the entire OLED region. The maximum feasibility achieved by current state of the art manufacturing techniques without the use of metal grid lines or other measures to enhance the conductivity of the anode is limited to about 5 cm x 5 cme in order to obtain a larger total emission area. One device needs to be incorporated into a metal grid' or can be "tiled" by several devices. However, the additional non-emission area occupied by the electrodes between the individual "light-emitting blocks" means that the area of the tile 152776.doc 201138180 is used to limit the disadvantages. Adjacent devices are occupied by the electrodes and this non-emissive region can be easily perceived. Again, applications using such OLED devices are used. In one of the methods of improving the ratio between the emitting region and the non-emitting region (i.e., allowing the encapsulation to extend to the edge of the device), the "topping" electrode (usually the cathode) is passed through the encapsulation. Contact, for example, by the cover (using the accepted convention, the term "top" * "bottom" refers to the OLED cover and the substrate side, respectively) and is fed by metal. Similarly, in order to contact the anode from the top side, a connection between the anode and the electrically conductive layer on the cover through the cathode must be established. The conductive layers in the cover can then be contacted from the back side, for example by electrical feeding similar to the cathode contact in the cover. The easiest way to create a connection between the anode and the cover is to have a plurality of raised metal contacts on the substrate prior to performing the vapor deposition process. The conductive material or "via" of the structure should be surrounded by an insulating material to avoid shorting between it and the cathode. Using current state of the art manufacturing techniques during vapor deposition of such organic and cathode layers, one or more shadow masks must be used to protect the metal contacts from coating. This deposition procedure requires a high degree of accuracy to meet the quality criteria of the final product. In addition, since the shadow masks are also coated with material during the vapor deposition step and need to be cleaned or replaced before each use, their use adds the total manufacturing cost. The vias made in this way are relatively large, making this OLED practically unusable for decorative and illumination purposes that do not interrupt the uniform emitting surface. Accordingly, it is an object of the present invention to provide an improved method of fabricating an OLED device 152776.doc -6 - 201138180 that prevents such problems as described above. SUMMARY OF THE INVENTION This object is achieved by the method of manufacturing an OLED device of claim 1 and by the OLED device of claim 9. According to the present invention, the method of fabricating an LED device includes the steps of applying a first electrode to a carrier and applying an active layer to the first electrode such that the active layer substantially uniformly covers the A first electrode, and subsequently a second electrode is applied to the active layer such that the second electrode substantially uniformly covers the active layer. The method further includes the step of exposing an access region of the first electrode in an opening, the opening being fabricated by removing a region of the second electrode and a corresponding region of the active layer such that the first The electrode system can be electrically accessed through the opening. These processing steps can be performed here in any suitable order. For example, in a particularly straightforward technique, the first electrode, the active layer, and the second electrode may be applied first, and then exposed by ablation of portions of the second electrode and ablation of the active layer. A plurality of apertures are created in the corresponding underlying regions of the plurality of access regions on the first electrode. In an alternative method, a void can be created in a two-step procedure. In a first step, the active layer may be applied to the first electrode, and a plurality of regions of the active layer corresponding to locations of future vias are subsequently removed or ablated to be exposed on the first electrode. Access area. Then, in the second step, 'the second electrode is applied to the active layer' and a plurality of regions above the active layer of the second electrode above the removal region are also removed to expose the Waiting for the access area. 152776.doc 201138180 The member that accesses the first electrode is generally referred to as a "via hole." A via hole is formed by removing a region of the second electrode and an underlying region of the active layer. Since these regions can be extremely small, the vias can be almost invisible, so that one of the LEDs fabricated using this method can be applied to large-area applications requiring high emission homogeneity. Easily accessible through openings in the "top" layer, and any number of such openings can be distributed around the second electrode layer, which means that the OLED device fabricated using the method according to the present invention advantageously performs - High brightness uniformity means that there is actually no difference in brightness between different zones of the emitting surface. Most advantageously, the method of fabricating a germanium LED device in accordance with the present invention does not require any costly or time consuming complex shadow masks when applying the layers in the future emitting region of the OLED device, and thus is manufactured using this method. A device is much less expensive than a comparable prior art device. According to the invention, the QLED device comprises a -electrode applied to a carrier; an active layer applied to the first electrode such that the active layer initially completely covers the first electrode; A second electrode is applied to the 3 kel active layer such that the active layer initially completely covers the second electrode. The expression "completely covered by application" means that within the limits of the future emission area of the OLED, one layer is applied to completely and uniformly cover the previous layer. The germanium LED device according to the present invention further includes an access region for electrically contacting the fifth electrode in one of the openings of the second electrode, wherein the opening includes a removed region of the second electrode and the active layer Corresponding to the removed region, the first electrode can be accessed through the opening 152776.doc 201138180 pole ' and wherein the first electrode is only connected to the second electrode by the active layer and/or free space Electrically isolated. The OLED device according to the present invention may have an emission region that is much larger than one of the emission regions that can be achieved by prior art fabrication techniques. In prior art fabrication techniques, both the anode and the cathode are from the device. Accessed on one edge. Since the maximum emission 〇 LED area can be made extremely large and practically limited only by the manufacturing equipment used, a large number of LEDs can be achieved without the tiling or metal routing and grid lines on the substrate side. This large OLED device with homogeneous light quality can be applied to a variety of applications that cannot be used in advanced OLED devices. However, since the OLED device according to the present invention does not require a large access area on the sides of the device, a substantially seamless tiling is possible, so that the 〇led device can be An array is provided to assemble a larger device. The accompanying technical solutions and the following description disclose particularly advantageous embodiments and features of the invention. May be exposed to the first in several ways depending on the structure of the first electrode
電極、該主動層及該第二電極大體上全部為平面， ，且各The electrode, the active layer and the second electrode are substantially all planar, and each
細地解釋）’可獲得具有約1〇〇 吵nr议彳町（共寻在下文將詳 μηι之一表面區域之若干接 I52776.doc •9· 201138180 達區域。 一旦已經產生該孔隙來暴露該接達區域，可將一電氣導 電通孔引入該孔隙中。再次，此係可以若干方式完成。在 本發明之一較佳實施例中，此係藉由在該孔隙中建構一電 氣導電插塞以使該第一電極電氣延伸至少至該第二電極之 位準而完成。例如，可將—或多個液滴之電氣導電黏滞液 體(諸如-電氣導電黏膠或油墨、一銀糊等等)滴入該孔隙 中。液滴之尺寸較佳為約數十微米。塗展會受到該糊、黏 膠或油墨的恰當配方而限制。所選擇之液體之表面張力及 該液滴與該第^電極之間《實體分離足錄止材料之一溢 出。較佳的是’所使用之導電材料之性質容許形成一「小 丘」，其可能延伸至該第：電極之位準。此小丘甚至可能 稍微凸出在該第二電極上方，由於該 「平坦度」足夠，且可容許若干微米之範圍中之一= 整。 取決於電氣導電液體之選擇，可簡單地藉由任該小丘或 通孔乾燥而容許其硬化。或者可使用諸如—雷射之一聚隹 性熱源或諸如具有特U長之紅外線燈之全區域光源來硬 化該材料。在根據本發明之該方法之另—較佳實施例中， 來形成該電氣導電插塞’且該方法包括對該電 電插塞執行熱退火。例如’―旦該罩蓋就位，則可使 用-合適之雷射簡單地對該糊局部加熱。接著將塗展熔融 之金屬，以濕潤該罩蓋之該表面上之一對應區。 在本發明之一進一步較佳實施例中，該第一電極層包括 152776.doc 201138180 若干額外之突起接觸點或「立私 立柱」’其較佳者經定大小以 延伸通過該主動層’實際上延伸 r及第—電極之該表面，且 移除該第二電極層之一區及兮*說a 及该主動層之一對應區以暴露該 第一電極層之一接達區域之嗜牛^ 涿步驟包括藉由移除該第二電 極之一區及該主動層之一下俠卩品E, 卜仇&而至少部分暴露該等接觸 點之至少一者。 在上述之兩種技術中’可應用任何合適之技術來移除該 第二電極之㈣及該下伏主動層區以暴露該接達區域。例 如，此等區可使用黏性膠帶或藉由—適當之機械移除技術 而移除。或者，可於移除該第二電極之該區之後藉由熱釋 放而移除該主動層之該區。然而’在本發明之—尤其較佳 實施例中，暴露-接達區域之該步驟包括將一雷射光束引 導在該第二電極層《該區域及該主動層之該對應之下伏 區’以燒蝕彼等區中之材料。此技術尤其較佳，由於可藉 由使用一束雷射光而達成一極精確及快速之燒蝕。 由於雷射光之一脈衝中之能量係於該脈衝持續時間被分 佈，可燒蝕之材料之深度將取決於所使用之該雷射及若干 雷射程序參數。對於相對低功率脈衝，可在一第一步驟中 雷射燒蝕該第二電極之一區，且接著可在一第二步驟中燒 蝕该主動層之該區。然而，在本發明之一較佳實施例中， 該雷射光束包括具有達10 ps之一持續時間之光學脈衝，因 此能量密度高得足以在一步驟中燒蝕兩層。可應用此等脈 衝來燒蝕於該接達區域上方之該兩個層，而使用較短之脈 衝來燒钮在該主動層中之孔周圍之該第二電極之一 152776.doc •11 · 201138180 「環」，從而在該接達區域之周圍形成一種主動層「階 地」或「平台」。此「階地」增加該電氣插塞（如上述在一 稍後步驟中形幻與該第二電極之間之該實體分離。若使 用皮秒雷射，則金屬及主動層材料二者被轉變成氣相且可 藉由吸力而輕易移除或提取。若使用具有較長脈衝持續時 間的雷射，則自該第二電極金屬層游離之顆粒亦可藉由吸 力而移除。在該主動層中之該有機材料之情形下，在燒蝕 期間向大氣添加氧氣容許該有機材料轉換成亦可藉由吸力 而輕易移除之氣態化合物。 該雷射燒蝕技術容許產生通過該等〇LED裝置層之若干 極小之孔隙。使用當前可利用之雷射技術，該等通孔之最 小尺寸僅藉由最小之雷射光點尺寸而調節。可達成i〇 至μη之光點尺寸。孔隙（及所封閉之通孔）大體上係肉 眼不可見，因此具有此等大小之通孔之一 〇哪裝置大體 上呈現一均質發射區域。即使該等通孔自身可能並不透 明’該等通孔之小特徵尺寸足以確保該等通孔將不會被視 為該整個OL職置中之一扭曲。無論導電插塞被插入一 或多個孔隙中，或者無論該第一電極係經加工而包括一或 多個突起立柱，在每種情形下，此一元件中之該「頂部」 表面可視為該第一電極之—電氣延伸部分。 由於必須保護詩該主動層中之财機材料免受濕氣， 根據本發明之該方法亦較佳包含應用—密閉密封件（即， 完全水密）以封閉至少該主動層之該步驟。該密封件可為 金屬、玻璃、經塗佈塑膠或任何合適材料之一罩蓋之形 152776.doc •12· 201138180 式。通常，將沿該基板之外邊緣之一邊界留為自由，即， 不用任何電極或有機材料塗佈。接著可當應用該罩蓋以密 封於該等層中時將一黏膠應用至此邊緣。可輕易保持於該 OLED之該發射區域之外側之此邊界免除不希望之沈積 物，例如，藉由在應用電極及有機層時用一直截了當之輪 廓遮罩、藉由使用黏性膠帶來移除不希望之材料或任何其 他適當之技術保護該邊界。 熟悉此項技術者將知道，可使用常見之材料製造該 OLED裝置。例如，該載體可包括一玻璃基板；該第一電 極可充作陽極且係由諸如鋁摻雜之氧化辞(Zn〇)或氧化銦 錫στο)之一透明導電氧化物或諸如聚（3,4·二氧乙婦嗟吩） 聚（苯乙料酸鹽）(PED〇T:PSS)^ _高度延展性透明導電 聚合物製成；該第：電極可充作陰極且係由任何合適之導 體（諸如銘）製成；且該主動層可包括一或多種對其等之發 光吐質所選擇之有機半導體材料。此―裝置將僅通 ㈣陽極及玻璃載體而發射。或者，該0LED裝置可經實 現大體上為透明，例如’藉由對該陰極使用一透明材料且 使用一透明罩蓋。 根據本發明之該〇LED裝置在該第：電極中包括至少一 個開口 ’其至該第—電極上之—接達區域，因此可自上方 電氣接達該第—電極，且其中此-開口之直徑包括至多 300/m ’更佳者至多2〇〇㈣，且最佳者至多1⑽叫。較佳 的是，根據本發明之該〇LED裝置包括此等開口之一陣 列，其等至該第一電極上之若干接達區域，其中用於該等 152776.doc 201138180 …相鄰開口空間上分離在該等開口之中心之間測量的 =離’例如，5 mm。相鄰開口之間之距離(且因此亦為 ^ ) 了他取決於若干參數，例如，取決 ;s…孔之大小且因此電流攜載容量，取決於該〇LED 裝置之亮度要求等等。由於每個開口可包含-通孔，根據 本發明之該0LED裝置較佳包括通孔之-對應陣列，其等 至該第-電極之若干接達區域。藉由產生若干小通孔，可 避免此等通孔與該第二電極之間之一不希望之接觸。因 在本發月之尤其較佳實施例中，一通孔之該直徑包 括至多更佳者至多2〇μπι，且最佳者至多―。 在根據本發明之-C)LED裝置中，該第二電極之該被移 除區較佳大於該主動層之該被移除區，且該主動層之該待 移除區位於該第二電極之該將被移除區内，從而在產生該 ^之後該第電極上之該接達區域與該第二電極實體 分離且因此與其電氣隔離。 在根據本發明之該0LED裝置之本發明之一進一步較佳 實施例中，該第一電極層係由至少一個突起之元件（較佳 者突起元件之一陣列，諸如所實現之若干立柱或若干銷） 增大，因而其等將延伸進入在一後續步驟中所應用之該主 動層中’且其中在§亥第一電極區及主動層區之移除之後， 一接達區域包括被暴露於該開口中之一突起元件之一表 面。 在根據本發明之該OLED裝置之一較佳實施例中，該開 口包括一孔隙’其延伸通過該第二電極且通過該主動層而 152776.doc •14- 201138180 至該第—電極上之該接達區域，其經實現 雷齑道· φ、；* . ώ ^ if — 、電通孔，以通過該第二電極中之該開口而電 該第一電極。 电軋接達 一可紅易將该OLED褒置之該表面上之該第二電極連接至 y電麼源。為了將電流攜載至該等通孔且因此至該第—電 極，需要-電氣連接，其並不與該第二電極接觸。因此， 在本發明之—尤其較佳實施例中，該罩蓋包括—電氣導電 材料。為了阻止該罩蓋與該陰極之間之不希望之接觸，可 在該陰極與該罩蓋之間留下-層自由空間。或者，可在該 罩蓋與該陰極之間安置—隔離層，其具有若干適當之= 口，以暴露與該等通孔重合之此等區中之表面内側之 蓋。 在本發明之一替代性實施例中，該罩蓋包括至少一個突 起電氣導電通孔，其根據該第二電極中之一對應開口而定 位且經實現延伸通過該孔隙而至該接達區域，以當該罩蓋 被放置就位時電氣接達該第一電極，因此可在該罩蓋（且 因此被連接至此等罩蓋之一電壓供給）與該第一電極之間 進行一電氣連接。較佳的是，該罩蓋包括很小之大小之突 起電氣導電通孔之一陣列，其對應於經定大小因此在該等 OLED裝置層中之孔隙之一陣列，該等孔隙給予至該裝置 之該載體上之該第一電極之接達。 【實施方式】 結合附圖而考慮下文之詳細描述，本發明之其他目的及 特徵將顯而易見。然而’應理解，該等圖式之設計僅用於 152776.doc -15- 201138180 圖解之目的且並非作為本發明之限制之一界定。 在該等圖中’整篇中類似之數字指類似之物體。該等圖 之元件不一定按比例緣製，尤其該〇led裝置層之厚度。 圖1展示製造-0LED裝置之一先前技術方法中之若干步 驟。此處’於—第—步驟⑴中一載體2(例如破璃或塑 膠）用-種具有—透明導電材料（例如，—層經摻雜氧化辞 (ZnO)、氧化麵錫（IT〇)、pED〇T:pss)或任何其他合適之導 電材料之兩個分離區域2〇、2i塗佈。該等區域2〇、21必須 相互隔離，由於該等區域之一者稍後將為該陰極且另一區 域將為該陽極。假設此裝置將為-底部發射OLED，則該 載體形成該裝置之前部且該陰極將形成一頂部表面。因 此，假設該陽極為該較大區域2〇。將接觸區域2〇,、21，應 用至》亥等電極區域2〇、21。由於該等接觸區域2〇,、21，必 肩仍然不由有機材料塗％，在後續之沈積步驟期間，必須 遮罩此等區。為此，如所示，在下一步驟⑴）令將一陰影 遮罩放置就位。假設該陰影遮罩％被精確固持就位， 則僅希望之區域將用該主動層材料22塗佈，如階段（111)中 所不且由若干虛線所指示。在一下一階段（IV)中，將另一 陰影遮罩Μ:放置就位，之後在階段（v)中應用該陰極23 ^ 需要該第二陰影遮罩Ms來保持該陽極接觸區域2〇，與該陰 極23電氣隔離。出於簡單之考量，此處僅指示該等遮罩之 阻止蒸’飞之該等相關部分。在已經應用該等層23之後，可 自接觸區域20’接達該陽極2〇 ,且該陰極23僅為最頂部表 面，且陽極20與陰極23為電氣分離。在此圖及下圖中，僅 152776.doc 201138180 展不此一 OLED構造之一小部分之一橫截面，且應理解， 該載體、電極層等等可在每種情形下延伸一適當之量。 為了完成該裳置’藉由例如膠接一玻璃蓋就位而囊封該 裝置。圖2中展示一完成之先前技術裝置20，其圖解該陰 極接觸區域21’、該陽極接觸區域20,、該發射區域23及一 推封外緣24。該等接觸區域係必要，此係因為此類型之結 構之低電流攜載能力之故。即使使用此等接觸區域2〇,、 2Γ，若無額外金屬分路線應用至該陽極塗層2〇上，最大裝 置尺寸被限於至多5 cm><5 cm。出於各種目的，需要大發 射區域，其等係僅可藉由平鋪此等個別經囊封裝置之若干 者而達成。然而’因為該等接觸區域2〇，、21i之相對大表 面積，由於s亥等發射區域之間之相對較大非發射譜帶，無 法以一無縫方式平鋪此等先前技術〇LED 2〇。 借助於圖3圖解另一先前技術之製造方法，在該方法 中’使用若干立柱而自該裝置之該表面電氣接達底部電 極，以獲得較大之發射區域。此處，在階段（I)中用一第Explain in detail) 'Available with about 1 〇〇 no nr 彳 彳 ( 共 共 共 共 共 共 共 共 共 共 共 共 共 共 μ μ μ μ μ μ μ μ μ μ μ μ μ μ μ μ μ 52 52 52 52 52 I 52 I I I I I I In the access region, an electrically conductive via can be introduced into the aperture. Again, this can be accomplished in a number of ways. In a preferred embodiment of the invention, an electrically conductive plug is constructed in the aperture. This is accomplished by electrically extending the first electrode to at least the level of the second electrode. For example, an electrically conductive viscous liquid of - or a plurality of droplets (such as - an electrically conductive adhesive or ink, a silver paste, etc.) Etc.) is dropped into the pores. The size of the droplets is preferably about several tens of microns. The coating is limited by the proper formulation of the paste, adhesive or ink. The surface tension of the selected liquid and the droplets ^ One of the physical separation of the recording material between the electrodes is overflowed. It is preferred that the nature of the conductive material used allows the formation of a "hill" which may extend to the level of the electrode: this hillock Maybe even slightly protruding Above the second electrode, since the "flatness" is sufficient, and one of a range of several micrometers can be tolerated, depending on the choice of the electrically conductive liquid, it can be easily allowed by any drying of the hillock or through hole. It may be hardened. Alternatively, a material such as a laser-based heat source or a full-area light source such as an infrared lamp having a special length may be used to harden the material. In another preferred embodiment of the method according to the present invention, Forming the electrically conductive plug' and the method includes performing a thermal annealing of the electrical plug. For example, if the cover is in place, the paste can be locally heated using a suitable laser. Expanding the molten metal to wet a corresponding region on the surface of the cover. In a further preferred embodiment of the invention, the first electrode layer comprises 152776.doc 201138180 a number of additional raised contact points or a private column" is preferably sized to extend through the active layer to actually extend the surface of the r and the first electrode, and to remove a region of the second electrode layer and to say a and the active layer One pair The step of exposing the access area of one of the first electrode layers includes at least partially exposing by removing one of the second electrode regions and one of the active layers under the scorpion E, Buqiu & At least one of the contact points. In any of the above two techniques, any suitable technique can be applied to remove the (four) of the second electrode and the underlying active layer region to expose the access region. For example, such The zone may be removed using adhesive tape or by a suitable mechanical removal technique. Alternatively, the zone of the active layer may be removed by heat release after removal of the zone of the second electrode. In a particularly preferred embodiment of the invention, the step of exposing the access region includes directing a laser beam at the second electrode layer "the region and the corresponding lower region of the active layer" to burn Etching the materials in their zones. This technique is especially preferred because a very accurate and rapid ablation can be achieved by using a beam of laser light. Since the energy in one of the pulses of the laser light is distributed over the duration of the pulse, the depth of the ablated material will depend on the laser used and several laser program parameters. For relatively low power pulses, a region of the second electrode can be ablated by a laser in a first step, and then the region of the active layer can be ablated in a second step. However, in a preferred embodiment of the invention, the laser beam comprises an optical pulse having a duration of up to 10 ps, so that the energy density is high enough to ablate two layers in one step. These pulses can be applied to ablate the two layers above the access area, and a shorter pulse is used to burn one of the second electrodes around the aperture in the active layer 152776.doc •11 201138180 "Ring" to form an active layer "step" or "platform" around the access area. This "place" adds the electrical plug (as described above in a later step in the physical separation between the second electrode and the second electrode. If a picosecond laser is used, both the metal and the active layer material are transformed. In the gas phase and easily removed or extracted by suction. If a laser with a longer pulse duration is used, the particles free from the second electrode metal layer can also be removed by suction. In the case of the organic material in the layer, the addition of oxygen to the atmosphere during ablation allows the organic material to be converted into a gaseous compound that can also be easily removed by suction. The laser ablation technique allows for the generation of LEDs through the A few tiny apertures in the device layer. Using the currently available laser technology, the minimum size of the vias is only adjusted by the minimum laser spot size. The spot size of i〇 to μη can be achieved. The closed through hole is substantially invisible to the naked eye, and therefore has one of the through holes of the same size, which device generally presents a homogeneous emission area. Even if the through holes themselves may be opaque The small feature size is sufficient to ensure that the vias will not be considered to be distorted in one of the entire OL positions, whether the conductive plug is inserted into one or more of the apertures, or whether the first electrode is processed or not One or more raised columns, in each case, the "top" surface of the element can be considered as an electrical extension of the first electrode. Since it is necessary to protect the financial material in the active layer from moisture The method according to the invention also preferably comprises the application of a hermetic seal (i.e., completely watertight) to close at least the active layer. The seal may be metal, glass, coated plastic or any suitable material. One of the shapes of the cover 152776.doc • 12· 201138180. Generally, the boundary along one of the outer edges of the substrate is left free, that is, without any electrode or organic material coating. Then the cover can be applied Applying an adhesive to the edge when sealed in the layers, the boundary that is easily maintained on the outside of the emission region of the OLED is free of undesirable deposits, for example, by applying electrodes and organic The layer is protected with a contoured mask that is always obscured by the use of adhesive tape to remove unwanted material or any other suitable technique. Those skilled in the art will recognize that the OLED device can be fabricated using common materials. For example, the carrier may include a glass substrate; the first electrode may serve as an anode and may be a transparent conductive oxide such as oxidized (Zn) or indium tin oxide (such as aluminum) or such as poly(3). , 4· Dioxyethylene phenanthrene) Poly(phenylethylate) (PED〇T:PSS)^ _ highly ductile transparent conductive polymer; the first: electrode can be used as a cathode and is suitable by any suitable The conductor (such as inscription) is made; and the active layer may include one or more organic semiconductor materials selected for the luminescent mass of the light. This device will only be launched through the (4) anode and glass carrier. Alternatively, the OLED device can be rendered substantially transparent, e.g., by using a transparent material for the cathode and using a transparent cover. The germanium LED device according to the present invention includes at least one opening to the first electrode in the first electrode, so that the first electrode can be electrically connected from above, and wherein the opening is The diameter includes up to 300/m 'better than 2 〇〇 (four), and the best is at most 1 (10). Preferably, the 〇LED device according to the present invention comprises an array of such openings, which waits until a number of access areas on the first electrode, for the 152776.doc 201138180 ... adjacent open space The separation measured between the centers of the openings is, for example, 5 mm. The distance between adjacent openings (and therefore also ^) depends on several parameters, for example, depending on the size of the s... hole and therefore the current carrying capacity, depending on the brightness requirements of the 〇LED device and the like. Since each opening may comprise a through hole, the OLED device according to the present invention preferably includes a corresponding array of vias that wait until a number of access regions of the first electrode. By creating a plurality of small vias, undesired contact between one of the vias and the second electrode can be avoided. In a particularly preferred embodiment of the present month, the diameter of a through hole includes at most 2 〇 μπι, and most preferably at most ―. In the -C) LED device according to the present invention, the removed region of the second electrode is preferably larger than the removed region of the active layer, and the region to be removed of the active layer is located at the second electrode This will be removed from the zone so that the access area on the first electrode is separated from the second electrode body and thus electrically isolated therefrom. In a further preferred embodiment of the invention of the OLED device according to the invention, the first electrode layer is comprised of at least one protruding element (preferably an array of protruding elements, such as a plurality of pillars or a plurality of The pin) is enlarged so that it will extend into the active layer applied in a subsequent step' and wherein after the removal of the first electrode region and the active layer region, an access region includes being exposed to One of the openings protrudes from one of the surfaces of the element. In a preferred embodiment of the OLED device according to the present invention, the opening includes an aperture extending through the second electrode and passing through the active layer 152776.doc •14-201138180 to the first electrode The access area is implemented by a Thunder Road φ,;*. ώ ^ if —, an electrical via to electrically pass the first electrode through the opening in the second electrode. The electric rolling is connected to the second electrode on the surface of the OLED device. In order to carry current to the vias and thus to the first electrode, an electrical connection is required which is not in contact with the second electrode. Thus, in a particularly preferred embodiment of the invention, the cover comprises an electrically conductive material. In order to prevent undesired contact between the cover and the cathode, a layer-free space can be left between the cathode and the cover. Alternatively, a barrier layer may be disposed between the cover and the cathode, having a plurality of suitable openings to expose a cover on the inside of the surface in the regions that coincide with the through holes. In an alternative embodiment of the present invention, the cover includes at least one protruding electrical conductive via that is positioned according to a corresponding one of the second electrodes and that extends through the aperture to the access area, The first electrode is electrically connected when the cover is placed in position so that an electrical connection can be made between the cover (and thus the voltage supply connected to one of the covers) and the first electrode. Preferably, the cover comprises an array of raised electrical conductive vias of a very small size corresponding to an array of apertures of a size sized in the OLED device layers, the apertures being imparted to the device Access to the first electrode on the carrier. Other objects and features of the present invention will become apparent from the Detailed Description of the Drawing. However, it should be understood that the design of the drawings is only for the purpose of illustration of 152776.doc -15-201138180 and is not defined as one of the limitations of the invention. In the figures, like numerals are used to refer to similar objects throughout the drawings. The elements of the figures are not necessarily to scale, particularly the thickness of the layer of the device. Figure 1 shows several of the prior art methods of fabricating an -OLED device. Here, in the first step (1), a carrier 2 (for example, a glass or a plastic) has a transparent conductive material (for example, a layer of doped oxidized (ZnO), an oxidized tin (IT〇), pED〇T: pss) or two separate regions 2〇, 2i of any other suitable electrically conductive material. The regions 2, 21 must be isolated from one another, since one of the regions will be the cathode later and the other region will be the anode. Assuming that the device will be a bottom-emitting OLED, the carrier will form the front of the device and the cathode will form a top surface. Therefore, it is assumed that the anode is the larger area 2〇. The contact areas 2〇, 21 are applied to the electrode areas 2〇, 21 such as “Hai”. Since the contact areas 2, 21, 21 are still not coated with organic material, these areas must be masked during subsequent deposition steps. To this end, as shown, in the next step (1)) a shadow mask is placed in place. Assuming that the shadow mask % is accurately held in place, only the desired area will be coated with the active layer material 22, as indicated by the number of dashed lines in stage (111). In the next stage (IV), another shadow mask is placed: placed in place, and then applied to the cathode 23 in stage (v). The second shadow mask Ms is required to maintain the anode contact area 2〇, It is electrically isolated from the cathode 23. For the sake of simplicity, only the relevant portions of the masks are prevented from flashing. After the layers 23 have been applied, the anode 2 is accessible from the contact region 20', and the cathode 23 is only the topmost surface, and the anode 20 and the cathode 23 are electrically separated. In this and the following figures, only 152776.doc 201138180 does not show a cross section of one of the small portions of the OLED structure, and it should be understood that the carrier, electrode layer, etc. can be extended by an appropriate amount in each case. . To complete the skirt, the device is encapsulated by, for example, gluing a glass cover in place. A completed prior art device 20 is illustrated in FIG. 2, which illustrates the cathode contact region 21', the anode contact region 20, the emitter region 23, and a push seal outer edge 24. These contact areas are necessary because of the low current carrying capacity of this type of structure. Even if such contact areas 2 〇, 2 使用 are used, the maximum device size is limited to at most 5 cm><5 cm if no additional metal separation is applied to the anodic coating 2 。. For various purposes, large areas of radiation are required, which can only be achieved by tiling a number of such individual encapsulated devices. However, because of the relatively large surface area of the contact areas 2〇, 21i, due to the relatively large non-emission bands between the emission areas such as shai, it is not possible to tile these prior art 〇LEDs in a seamless manner. . Another prior art manufacturing method is illustrated with the aid of Figure 3, in which a plurality of columns are used to electrically access the bottom electrode from the surface of the device to obtain a larger emission area. Here, use one in stage (I)
罩A放置就位，以在階段（IV)中沈積該主動層芯之前「保 護」該等虛線内之該等區域。接著在 。接著在階段（V)中將該第二The cover A is placed in position to "protect" the areas within the dashed lines prior to depositing the active core in stage (IV). Then at. Then in the stage (V) the second
。雖然以此 152776.doc .17· 201138180 方式可獲付-較大之總發射區域，但使用複雜陰影遮罩％ 及在該遮罩與該等立柱之間之對準容許度使得此等裝置之 製造不切實際。因此在實務中，此等裝置不適用於諸如需 要均質發射區域之裝飾性照明之應用。 圖4展不使用根據本發明之該第一方法製造一 〇LED裝置 之該等步驟。此處’可為玻璃或塑膠之—载體2依次地用 平坦層（在階段⑴中用一第一電極3、在階段（11)中用一主 動層4且在階段⑽中用-第二電極5)塗佈。|需陰影遮 罩，由於無須避免關鍵區域，使得沈積簡單且快速。在一 下一步驟（IV)中，將一束雷射光[引導「頂部層」上之一 點處，以燒蝕該第二電極5之一區5〇及該主動區域4之一下 伏區40,從而在該第一電極3上暴露一接達區域3(^自由 空間現佔據該等經移除區40、50。該接達區域3〇實際上為 一凹處或孔隙3 1之底部，如圖5中所示，其給予「進入」 此一孔隙3 1之一視圖。此圖展示由該主動區域4之一外緣 或階地圍繞之該接達區域30，該主動區域4轉而由該頂部 層或第二電極5圍繞。此一孔隙3 1之大小可極度小，且將 在很大程度上取決於所使用之該雷射。可使用具有在數十 微秒之一脈衝長度及532 nm之一頻率之一倍頻Nd:YAG雷 射在金屬及有機燒蝕中達成良好之結果。使用此一設定， 首先在進展至燒蝕該有機區域4〇之前燒蝕該金屬區5〇。可 用數十皮秒範圍中之一較短脈衝長度而獲得更好的結果， 由於該雷射束L所增加之脈衝能量使得可能在一單一程序 步驟中移除金屬區50及有機區40二者。 152776.doc -18· 201138180 可在若干進一步之技術中使用該孔隙3 1，以提供至該第 一電極3之電氣接達。在圖6所示之根據本發明之一方法 中，在一後續階段V中將一電氣導電黏滯液體6滴入該孔隙 31中，於該孔隙31中，該液體6塗展以填充該主動層4中之 該孔。此一液體6可為一銀糊或導電黏膠，因為其導電及 黏滯性質而選擇。以此方式沈積於該孔隙31中之材料自行 硬化，或可視需要而熱退火，以在階段VI中給予接觸點Μ 或通孔66，可藉由該接觸點66或通孔66通過該頂部層5而 電氣接達該第一電極3。延伸該第一電極3之該接觸點“係 藉由以-環狀方式圍繞該接觸點66之自由空間心與該第 二電極5隔離。儘管該圖中僅展示—個此接觸點66，孰乘 此項技術者將體會，取決於待使㈣裝置之應用，可製^ 任何數目之此小通孔。 在圖7中所示之另_方法ψ，廿dfci ^ Ψ 並非如上所述用一黏滯導 電液體建立一接觸戟k 觸,點^在階段V中將-電氣導電立柱 77降下至該孔隙3 j中。 立柱77可為一罩蓋7之一部 为’該罩蓋係應用以囊封該 麗遛占m L 几成之裝置。該罩蓋7可由金 屬1成，因此可藉由該罩蓋 _ ^ ^ , 早蛊，及該荨立柱77向該陽極供給 一電流。為了確保該陰極5未 fa1 ^ ^ . 由該罩盍7碰到，可於此等之 間留下足夠的自由空問， 或如此處所示，可給予該罩蓋7 絕緣塗層71。再攻，兮當 柱77,…配… 具有任何數目之此細小立 柱7胸* 重合。料請其立 柱77係了由任何合適之材 $ ^ ^ 冶'成。例如，該等立柱77及兮 罩蓋7係可由諸如鋁之 /寻立往/7及。亥 屬表成。為了保證良好的機械 152776.doc 201138180 接觸及電氣接觸，該等立柱較佳應由導電黏膠或金屬糊製 成，該導電黏膠或金屬糊藉由退火或硬化而在該第一電極 與該罩蓋之間形成可靠之接觸件。同樣地，此處該第二電 極5之經移除區大得足以在該立柱77之周圍留下一環之自 由工間5 1，從而使该立柱77(且因此該第一電極3同樣）與該 第二電極5隔離。為了向該陰極5供給電流，該罩蓋7之另 一區可具有一合適之開口，可經過該開口電氣接觸該陰極 5。通過該罩蓋7電氣接觸該陰極5之此構件係已知且此處 無需詳細解釋。 圖8展示具有此一罩蓋7之一經部分完成之〇led裝置之 一側視圖（大大簡化且誇大）。此處，該罩蓋7於一角落突 起’以展示若干立柱77,其各者經配置而與若干孔隙31重 合。當將該罩蓋7放置就位時，該等接觸銷77或立柱加 合於該等孔隙3 1中且與該第—電極3進行接觸。當然，該 罩蓋7可由一剛性材料製成，且出於圖解之㈣，在圖中 僅展示其為「向後彎曲」。 圖=展示使用根據本發明之—第二方法製造一 〇led裝置 之該等步驟。此處，在階段⑴中將該第一電極3應用在一 連續平坦層中，且在階段（11)中將_突起之接觸件Μ應用 至該電極3，實際上延伸該第一電極3 及（IV)中，應用一主動有機層4及一第 使用陰影遮罩，因此該主動層4及該第 柱33。在一雷射燒钮步驟（v)中，該第 。在後續的階段（III) —電極5。此處，不 —電極5亦覆蓋該立 二電極5之一區50及 該主動層4之一區40(該等區4〇、 50塗佈該立柱33之頂部）被 152776.doc •20- 201138180 移除，以暴露該第-電極3於該立柱33上之一接達區域 30’如在完成階段（VI)中所示。由於該主動區域4亦塗佈 該立柱33之側，且此「塗層」並未在該燒蝕步驟中移 除，該立柱33實際上與該第二電極層5電氣隔離，因此， 此處無需如圖3中針對先前技術之術而描述之一額外絕緣 環。 、 圖10展示根據本發明之一 OLED裝置i之一實施例之一平 面圖，在此情形下通過該透明載體而看。該整個發射區域 ίο初始時使用如上所述之均f層而建立，m繞邊緣 91留為自由空間，且接著產生若干開口，以容納複數個通 孔33、66、77。無論用來產生該等電氣通孔33、66、77之 技術，此等通孔係可製作得極度小且係可普遍地以一均等 分佈而配置，因此可藉由該裝置達成一均質亮度，且亦可 達成一較大程度之亮度，由於該等電極之電流攜載能力係 藉由該等導電通孔33、66、77而大大增加。此處，該等通 孔33、66、77被展示為該發射區域1〇中之環狀區，但實際 上該等通孔33、66、77之直徑僅為約數十微米，將為肉眼 所不可見。同樣地，該裝置尺寸可遠遠大於最大現實先前 技術OLED裝置尺寸。實際上，根據本發明之該〇LED裝置 之大小係僅由用以應用該等層且完成該囊封之製造設備所 限制。此外，由於此處無需先前技術已知之該等橫向接觸 區域，该裝置之§玄等圍繞邊緣91可經實現為極狹窄（約i 〇〇 μηι) ’允許許多此等裝置之一大體上無縫平鋪。 雖然已在該等圖式及上文描述中詳細圖解且描述本發 152776.doc •21· 201138180 明’此圖解及描述應被理解為圖解性或例證性且非限制 性’本發明不限於所揭示之該等實施例。熟悉此項技術者 自學習該等圖式、該揭示内容及所附申請專利範圍可理解 且實施對所揭示之該等實施例之其他變化。出於簡潔之考 量，應理解，在整篇此申請案中使用「一」（「a」或 an」）不排除複數個，且「包括」（comprising)不排除其 他步驟或元件。單憑某些措施被列舉於互不相同之附屬請 求項中並不指示不可有利地使用此等措施之一組合，該申 請專利範圍中之任何參考符號不應被解讀為限制該範圍。 【圖式簡單說明】 圖1展示製造一 OLED裝置之一第一先前技術方法中之若 干步驟； 圖2展示一先前技術〇led裝置； 圖3展示製造一 0LED裝置之一第二先前技術方法中之若 干步驟； 圖4展示使用根據本發明之一第一方法製造一 〇led裝置 之若干步驟； 圖5展示進入圖4之一經部分完成〇LED裝置上之一接達 區域之一立視圖； 圖ό展示圖4之該經部分完成〇Led裝置之一孔隙中之— 電氣導電插塞； 圖7展示圖4之該經部分完成〇LED裝置之一孔隙中之— 罩蓋立柱； 圖8展示圖7之該經部分完成〇LED裝置之一側視圖，其 152776.doc •22- 201138180 中使一罩蓋突起以展示若干接觸立柱； 圖9展示使用根據本發明之一坌_ 士 ^ 乐一万法製造一 OLED裝置 之若干步驟；及 圖10展示根據本發明之一OLED裝置之一實施例。 【主要元件符號說明】 1 OLED裝置 2 載體 3 第一電極 4 主動層 5 第二電極 6 電氣導電黏滯液體 7 罩蓋 10 發射區域 20、21 分離區域 20' ' 21' 接觸區域 22 主動層材料 23 陰極 24 密封外緣 31 凹處或孔隙 33 立柱 40 第一電極層 41 突起立桎 42 主動層 43 第一電極 152776.doc •23- 201138180 45 絕緣環 50 第二電極5之一 51 自由空間 66 接觸點 71 絕緣塗層 77 電氣導電立柱 91 圍繞邊緣 152776.doc -24-. Although a larger total emission area is available in this way 152776.doc.17·201138180, the use of complex shadow mask % and the tolerance of alignment between the mask and the columns makes these devices Manufacturing is impractical. Therefore, in practice, such devices are not suitable for applications such as decorative lighting that require a homogeneous emission area. Figure 4 shows the steps of fabricating a germanium LED device in accordance with the first method of the present invention. Here, 'glass or plastic-carrier 2, in turn, uses a flat layer (using a first electrode 3 in stage (1), an active layer 4 in stage (11) and - in stage (10) - second Electrode 5) is coated. |Shaded masks are required, making deposition simple and fast because there is no need to avoid critical areas. In a next step (IV), a beam of laser light is directed [at a point on the "top layer" to ablate one of the regions 5 of the second electrode 5 and the underlying region 40 of the active region 4, thereby An access area 3 is exposed on the first electrode 3 (the free space now occupies the removed areas 40, 50. The access area 3 is actually a recess or the bottom of the aperture 31, as shown As shown in Figure 5, it gives "into" a view of the aperture 31. This figure shows the access area 30 surrounded by an outer edge or terrace of the active area 4, the active area 4 being rotated by The top layer or second electrode 5 is surrounded. The size of this aperture 31 can be extremely small and will depend to a large extent on the laser used. It can be used with a pulse length of tens of microseconds and 532 A frequency doubling Nd:YAG laser at one of the nm frequencies achieves good results in metal and organic ablation. Using this setup, the metal region 5 ablate is first ablated before proceeding to ablate the organic region. Better results can be obtained with one of the shortest pulse lengths in the range of tens of picoseconds, due to the increased laser beam L The rush energy makes it possible to remove both the metal region 50 and the organic region 40 in a single procedural step. 152776.doc -18· 201138180 The aperture 31 can be used in several further techniques to provide to the first electrode 3 Electrically accessible. In one of the methods according to the invention shown in Figure 6, an electrically conductive viscous liquid 6 is dropped into the aperture 31 in a subsequent stage V, in which the liquid 6 is coated The hole is filled in the active layer 4. The liquid 6 can be a silver paste or a conductive adhesive, which is selected for its conductive and viscous properties. The material deposited in the pore 31 in this way hardens itself. Or thermally annealed as needed to impart a contact point 通 or via 66 in stage VI, through which the first electrode 3 can be electrically accessed by the contact point 66 or via 66. The contact point of an electrode 3 is "isolated from the second electrode 5 by a free-space center surrounding the contact point 66 in a ring-like manner. Although only one contact point 66 is shown in the figure, multiply this The technician will understand that depending on the application of the device (4), The number of such small vias. In the other method shown in Figure 7, 廿dfci ^ 并非 does not establish a contact 戟k contact with a viscous conductive liquid as described above, and the point ^ will be electrically conductive in phase V. The post 77 is lowered into the aperture 3j. The post 77 can be a portion of a cover 7 that is used to enclose the device to cover a few minutes. The cover 7 can be made of metal. Therefore, a current can be supplied to the anode by the cover _ ^ ^ , early 蛊, and the column 77. To ensure that the cathode 5 is not fa1 ^ ^. A sufficient free space is left between, or as shown here, the cover 7 may be provided with an insulating coating 71. Re-attack, jingle column 77, ... with ... with any number of these small columns 7 chest * coincide. It is recommended that the column 77 be made of any suitable material $ ^ ^ 冶'. For example, the uprights 77 and the sash cover 7 can be made of, for example, aluminum/straight to /7. Hai is a form. In order to ensure good mechanical contact and electrical contact, the posts are preferably made of a conductive adhesive or metal paste, which is annealed or hardened at the first electrode and the metal paste. A reliable contact is formed between the covers. Similarly, the removed region of the second electrode 5 is large enough to leave a free space 5 1 around the pillar 77 so that the pillar 77 (and thus the first electrode 3 is the same) The second electrode 5 is isolated. In order to supply current to the cathode 5, another region of the cover 7 can have a suitable opening through which the cathode 5 can be electrically contacted. This component that electrically contacts the cathode 5 through the cover 7 is known and need not be explained in detail herein. Figure 8 shows a side view (substantially simplified and exaggerated) of a partially completed 〇led device having such a cover 7. Here, the cover 7 projects at a corner to show a plurality of posts 77, each of which is configured to coincide with a plurality of apertures 31. When the cover 7 is placed in position, the contact pins 77 or posts are added to the holes 31 and brought into contact with the first electrode 3. Of course, the cover 7 can be made of a rigid material, and for the purpose of illustration (d), it is only shown as "backward bending" in the figures. Figure = shows the steps of fabricating a 〇led device using the second method in accordance with the present invention. Here, the first electrode 3 is applied in a continuous flat layer in the stage (1), and the contact Μ of the protrusion is applied to the electrode 3 in the stage (11), actually extending the first electrode 3 and In (IV), an active organic layer 4 and a shadow mask are used, thus the active layer 4 and the first pillar 33. In a laser burn button step (v), the first. In the subsequent stage (III) - electrode 5. Here, the non-electrode 5 also covers a region 50 of the vertical electrode 5 and a region 40 of the active layer 4 (the regions 4, 50 coating the top of the column 33) are 152776.doc • 20- 201138180 is removed to expose one of the first electrode 3's access regions 30' on the upright 33 as shown in the completion phase (VI). Since the active region 4 is also coated on the side of the pillar 33, and the "coating" is not removed in the ablation step, the pillar 33 is actually electrically isolated from the second electrode layer 5, therefore, here It is not necessary to describe one of the additional insulating rings as in the prior art as in FIG. Figure 10 shows a plan view of one embodiment of an OLED device i in accordance with the present invention, in this case viewed through the transparent carrier. The entire emission area ί is initially established using the uniform f-layer as described above, m leaving the free space around the edge 91, and then creating a number of openings to accommodate the plurality of vias 33, 66, 77. Regardless of the technique used to create the electrical vias 33, 66, 77, the vias can be made extremely small and can be generally distributed in an equal distribution so that a uniform brightness can be achieved by the device. A greater degree of brightness can also be achieved, since the current carrying capacity of the electrodes is greatly increased by the conductive vias 33, 66, 77. Here, the through holes 33, 66, 77 are shown as annular regions in the emission region 1 ,, but in fact the diameters of the through holes 33, 66, 77 are only about several tens of micrometers, which will be visible to the naked eye. Not visible. As such, the device size can be much larger than the largest realistic prior art OLED device size. In fact, the size of the germanium LED device in accordance with the present invention is limited only by the fabrication equipment used to apply the layers and complete the encapsulation. Moreover, since the lateral contact areas known in the prior art are not required here, the device can be implemented to be extremely narrow (about i 〇〇μηι) around the edge 91 'allowing one of many such devices to be substantially seamless Tiled. The present invention has been illustrated and described in detail in the drawings and the above description. These embodiments are disclosed. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art. For the sake of brevity, it should be understood that the use of "a" ("a" or an" throughout this application does not exclude the plural, and "comprising" does not exclude other steps or components. The mere fact that certain measures are recited in mutually different sub-claims does not indicate that one of the combinations of the measures may be used without limitation. Any reference signs in the scope of the claims should not be construed as limiting the scope. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows several steps in a first prior art method of fabricating an OLED device; FIG. 2 shows a prior art 〇led device; FIG. 3 shows a second prior art method for fabricating an OLED device. Figure 7 shows several steps for fabricating a 〇LED device using a first method in accordance with the present invention; Figure 5 shows an elevational view of one of the access regions of a partially completed 〇LED device of Figure 4; ό showing the partially electrically conductive plug in the aperture of one of the 〇Led devices of FIG. 4; FIG. 7 is a view showing the partially completed 〇LED device of FIG. 4 - the cover column; FIG. 8 is a view 7 is a partially completed side view of the LED device, which has a cover protrusion to show a number of contact posts in 152776.doc • 22-201138180; Figure 9 shows the use of one according to the invention 坌 士 ^ 乐 10,000 Several steps of fabricating an OLED device; and Figure 10 shows an embodiment of an OLED device in accordance with the present invention. [Main component symbol description] 1 OLED device 2 carrier 3 first electrode 4 active layer 5 second electrode 6 electrically conductive viscous liquid 7 cover 10 emission area 20, 21 separation area 20' ' 21' contact area 22 active layer material 23 Cathode 24 Sealing outer edge 31 Recess or aperture 33 Post 40 First electrode layer 41 Protrusion 桎 42 Active layer 43 First electrode 152776.doc • 23- 201138180 45 Insulation ring 50 One of the second electrode 5 51 Free space 66 Contact point 71 Insulation coating 77 Electrically conductive column 91 Around the edge 152776.doc -24-