CN101599453B - 制造半导体衬底的方法 - Google Patents

制造半导体衬底的方法 Download PDF

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Publication number
CN101599453B
CN101599453B CN200910141557.6A CN200910141557A CN101599453B CN 101599453 B CN101599453 B CN 101599453B CN 200910141557 A CN200910141557 A CN 200910141557A CN 101599453 B CN101599453 B CN 101599453B
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semiconductor layer
semiconductor substrate
substrate
manufacture
single crystal
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Expired - Fee Related
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CN200910141557.6A
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English (en)
Chinese (zh)
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CN101599453A (zh
Inventor
田中幸一郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200910141557.6A 2008-06-04 2009-06-04 制造半导体衬底的方法 Expired - Fee Related CN101599453B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-146914 2008-06-04
JP2008146914 2008-06-04
JP2008146914 2008-06-04

Publications (2)

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CN101599453A CN101599453A (zh) 2009-12-09
CN101599453B true CN101599453B (zh) 2013-10-16

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US (1) US7883988B2 (https=)
JP (1) JP5554014B2 (https=)
KR (1) KR101642335B1 (https=)
CN (1) CN101599453B (https=)
TW (1) TWI445060B (https=)

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CN102077318B (zh) * 2008-06-26 2013-03-27 株式会社Ihi 激光退火方法及装置
JP5540476B2 (ja) * 2008-06-30 2014-07-02 株式会社Ｉｈｉ レーザアニール装置
US8907258B2 (en) * 2010-04-08 2014-12-09 Ncc Nano, Llc Apparatus for providing transient thermal profile processing on a moving substrate
WO2012014786A1 (en) * 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
EP2490073B1 (en) 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
US10150230B2 (en) * 2011-04-08 2018-12-11 Ncc Nano, Llc Method for drying thin films in an energy efficient manner
EP3683627A1 (en) 2012-02-03 2020-07-22 ASML Netherlands B.V. Substrate holder and lithographic apparatus
US20130344688A1 (en) * 2012-06-20 2013-12-26 Zhiyuan Ye Atomic Layer Deposition with Rapid Thermal Treatment
US9496257B2 (en) 2014-06-30 2016-11-15 International Business Machines Corporation Removal of semiconductor growth defects
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
JP6421901B1 (ja) 2018-03-26 2018-11-14 三菱電機株式会社 半導体装置の製造方法
US20220234957A1 (en) * 2019-03-01 2022-07-28 Kyocera Corporation Ceramic structure and supporting mechanism which is provided with said ceramic structure

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CN1661778A (zh) * 2004-02-09 2005-08-31 株式会社东芝 半导体器件的制造方法
CN101174596A (zh) * 2006-10-30 2008-05-07 信越化学工业株式会社 单晶硅太阳能电池的制造方法及单晶硅太阳能电池

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Also Published As

Publication number Publication date
KR101642335B1 (ko) 2016-07-25
US20090305483A1 (en) 2009-12-10
CN101599453A (zh) 2009-12-09
JP2010016356A (ja) 2010-01-21
TW201017729A (en) 2010-05-01
TWI445060B (zh) 2014-07-11
JP5554014B2 (ja) 2014-07-23
KR20090127065A (ko) 2009-12-09
US7883988B2 (en) 2011-02-08

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