TWI445060B - 半導體基板之製造方法 - Google Patents

半導體基板之製造方法 Download PDF

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Publication number
TWI445060B
TWI445060B TW098118380A TW98118380A TWI445060B TW I445060 B TWI445060 B TW I445060B TW 098118380 A TW098118380 A TW 098118380A TW 98118380 A TW98118380 A TW 98118380A TW I445060 B TWI445060 B TW I445060B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
semiconductor substrate
light
layer
single crystal
Prior art date
Application number
TW098118380A
Other languages
English (en)
Chinese (zh)
Other versions
TW201017729A (en
Inventor
田中幸一郎
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201017729A publication Critical patent/TW201017729A/zh
Application granted granted Critical
Publication of TWI445060B publication Critical patent/TWI445060B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW098118380A 2008-06-04 2009-06-03 半導體基板之製造方法 TWI445060B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008146914 2008-06-04

Publications (2)

Publication Number Publication Date
TW201017729A TW201017729A (en) 2010-05-01
TWI445060B true TWI445060B (zh) 2014-07-11

Family

ID=41400699

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098118380A TWI445060B (zh) 2008-06-04 2009-06-03 半導體基板之製造方法

Country Status (5)

Country Link
US (1) US7883988B2 (https=)
JP (1) JP5554014B2 (https=)
KR (1) KR101642335B1 (https=)
CN (1) CN101599453B (https=)
TW (1) TWI445060B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102077318B (zh) * 2008-06-26 2013-03-27 株式会社Ihi 激光退火方法及装置
JP5540476B2 (ja) * 2008-06-30 2014-07-02 株式会社Ｉｈｉ レーザアニール装置
US8907258B2 (en) * 2010-04-08 2014-12-09 Ncc Nano, Llc Apparatus for providing transient thermal profile processing on a moving substrate
WO2012014786A1 (en) * 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
EP2490073B1 (en) 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
US10150230B2 (en) * 2011-04-08 2018-12-11 Ncc Nano, Llc Method for drying thin films in an energy efficient manner
EP3683627A1 (en) 2012-02-03 2020-07-22 ASML Netherlands B.V. Substrate holder and lithographic apparatus
US20130344688A1 (en) * 2012-06-20 2013-12-26 Zhiyuan Ye Atomic Layer Deposition with Rapid Thermal Treatment
US9496257B2 (en) 2014-06-30 2016-11-15 International Business Machines Corporation Removal of semiconductor growth defects
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
JP6421901B1 (ja) 2018-03-26 2018-11-14 三菱電機株式会社 半導体装置の製造方法
US20220234957A1 (en) * 2019-03-01 2022-07-28 Kyocera Corporation Ceramic structure and supporting mechanism which is provided with said ceramic structure

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JPS5764936A (en) 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS6235512A (ja) 1985-08-09 1987-02-16 Agency Of Ind Science & Technol 半導体単結晶薄膜の製造方法
JPH05218367A (ja) 1992-02-03 1993-08-27 Sharp Corp 多結晶シリコン薄膜用基板および多結晶シリコン薄膜の作製方法
JPH10275905A (ja) * 1997-03-31 1998-10-13 Mitsubishi Electric Corp シリコンウェーハの製造方法およびシリコンウェーハ
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
JPH11163363A (ja) * 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP3900741B2 (ja) * 1999-05-21 2007-04-04 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP4529036B2 (ja) * 1999-09-24 2010-08-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体用薄膜ウェハの製造方法
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
TWI313059B (https=) * 2000-12-08 2009-08-01 Sony Corporatio
JP2003209054A (ja) * 2001-11-12 2003-07-25 Dainippon Screen Mfg Co Ltd 基板の熱処理方法および熱処理装置
JP2005142344A (ja) * 2003-11-06 2005-06-02 Toshiba Corp 半導体装置の製造方法および半導体製造装置
JP4342429B2 (ja) * 2004-02-09 2009-10-14 株式会社東芝 半導体装置の製造方法
JP3910603B2 (ja) * 2004-06-07 2007-04-25 株式会社東芝 熱処理装置、熱処理方法及び半導体装置の製造方法
JP5031190B2 (ja) * 2005-02-02 2012-09-19 株式会社Ｓｕｍｃｏ 歪みＳｉ層を有する半導体ウェーハの製造方法
JP4594121B2 (ja) 2005-02-03 2010-12-08 信越化学工業株式会社 Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
US7829436B2 (en) * 2005-12-22 2010-11-09 Sumco Corporation Process for regeneration of a layer transferred wafer and regenerated layer transferred wafer
KR100972213B1 (ko) * 2005-12-27 2010-07-26 신에쓰 가가꾸 고교 가부시끼가이샤 Ｓｏｉ 웨이퍼의 제조 방법 및 ｓｏｉ 웨이퍼
JP2008112848A (ja) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池

Also Published As

Publication number Publication date
KR101642335B1 (ko) 2016-07-25
US20090305483A1 (en) 2009-12-10
CN101599453A (zh) 2009-12-09
JP2010016356A (ja) 2010-01-21
TW201017729A (en) 2010-05-01
CN101599453B (zh) 2013-10-16
JP5554014B2 (ja) 2014-07-23
KR20090127065A (ko) 2009-12-09
US7883988B2 (en) 2011-02-08

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