CN101587827B - 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 - Google Patents

具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 Download PDF

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Publication number
CN101587827B
CN101587827B CN2009101411058A CN200910141105A CN101587827B CN 101587827 B CN101587827 B CN 101587827B CN 2009101411058 A CN2009101411058 A CN 2009101411058A CN 200910141105 A CN200910141105 A CN 200910141105A CN 101587827 B CN101587827 B CN 101587827B
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China
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electrodes
source gas
product
treating
plasma generated
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Expired - Fee Related
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CN2009101411058A
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Chinese (zh)
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CN101587827A (zh
Inventor
托马斯·V·博尔登二世
路易斯·费耶罗
詹姆士·D·格蒂
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Nordson Corp
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Nordson Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
CN2009101411058A 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 Expired - Fee Related CN101587827B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310337212.4A CN103474327B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US12/123,954 2008-05-20

Related Child Applications (1)

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CN201310337212.4A Division CN103474327B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

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CN101587827A CN101587827A (zh) 2009-11-25
CN101587827B true CN101587827B (zh) 2013-09-04

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CN2009101411058A Expired - Fee Related CN101587827B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接
CN201310337212.4A Expired - Fee Related CN103474327B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

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US (2) US8372238B2 (enExample)
JP (2) JP5713542B2 (enExample)
KR (2) KR101645191B1 (enExample)
CN (2) CN101587827B (enExample)
SG (2) SG176502A1 (enExample)
TW (1) TWI519212B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474327B (zh) * 2008-05-20 2016-03-16 诺信公司 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120002795A (ko) * 2010-07-01 2012-01-09 주성엔지니어링(주) 피딩라인의 차폐수단을 가지는 전원공급수단 및 이를 포함한 기판처리장치
TW201226296A (en) * 2010-12-22 2012-07-01 Metal Ind Res & Dev Ct Continuous feeder apparatus applied in vacuum process
US8796075B2 (en) 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
CN102652946A (zh) * 2011-03-04 2012-09-05 富葵精密组件(深圳)有限公司 等离子清洁装置及等离子清洁方法
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
WO2013040454A1 (en) * 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
US8597982B2 (en) 2011-10-31 2013-12-03 Nordson Corporation Methods of fabricating electronics assemblies
US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
CN102881551B (zh) * 2012-09-12 2015-05-27 珠海宝丰堂电子科技有限公司 具有气流限制机构的等离子体处理系统及其方法
CN103904016A (zh) * 2014-04-04 2014-07-02 株洲南车时代电气股份有限公司 硅片承载装置
WO2016205857A1 (en) * 2015-06-23 2016-12-29 Aurora Labs Pty Ltd Plasma driven particle propagation apparatus and pumping method
JP1562489S (enExample) * 2015-08-14 2016-11-07
US11374184B2 (en) 2016-09-08 2022-06-28 Boe Technology Group Co., Ltd. Flexible substrate and fabrication method thereof, and flexible display apparatus
TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
CN113491174A (zh) 2018-12-20 2021-10-08 机械解析有限公司 用于等离子体放电设备的电极组件
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统
WO2021109425A1 (zh) * 2019-12-04 2021-06-10 江苏菲沃泰纳米科技有限公司 镀膜设备
US20230018842A1 (en) * 2020-01-09 2023-01-19 Nordson Corporation Workpiece support system for plasma treatment and method of using the same
CN111517117A (zh) * 2020-04-16 2020-08-11 昆山辉跃通信设备有限公司 一种等离子体设备用滑动装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
CN1783431A (zh) * 2004-12-03 2006-06-07 东京毅力科创株式会社 等离子体处理装置
CN1875454A (zh) * 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
US4328081A (en) * 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US4282077A (en) * 1980-07-03 1981-08-04 General Dynamics, Pomona Division Uniform plasma etching system
US4425210A (en) * 1980-11-04 1984-01-10 Fazlin Fazal A Plasma desmearing apparatus and method
DD156715A1 (de) 1981-03-05 1982-09-15 Heinz Rumberg Einrichtung zur beidseitigen beschichtung ebener substrate
US4806225A (en) * 1982-05-28 1989-02-21 Advanced Plasma Systems, Inc. Desmearing and plated-through-hole apparatus
US4474659A (en) * 1982-05-28 1984-10-02 Fazal Fazlin Plated-through-hole method
US4863577A (en) * 1982-05-28 1989-09-05 Advanced Plasma Systems, Inc. Desmearing and plated-through-hole method
JPS60123032A (ja) 1983-12-07 1985-07-01 Dainamitsuku Internatl Kk プラズマ処理方法および装置
US4623441A (en) * 1984-08-15 1986-11-18 Advanced Plasma Systems Inc. Paired electrodes for plasma chambers
US4689105A (en) * 1985-04-15 1987-08-25 Advanced Plasma Systems Inc. Multi-layer printed circuit board lamination apparatus
US4859271A (en) * 1985-04-15 1989-08-22 Advanced Plasma Systems, Inc. Lamination apparatus having multiple book platens
US4681649A (en) * 1985-04-15 1987-07-21 Fazlin Fazal A Multi-layer printed circuit board vacuum lamination method
US4780174A (en) * 1986-12-05 1988-10-25 Lan Shan Ming Dislocation-free epitaxial growth in radio-frequency heating reactor
JPS63247373A (ja) 1987-03-31 1988-10-14 Kanegafuchi Chem Ind Co Ltd 薄膜形成方法及び装置
US5041201A (en) 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
EP0428161B1 (en) * 1989-11-15 1999-02-17 Kokusai Electric Co., Ltd. Dry process system
US5280156A (en) * 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
EP0510912B1 (en) 1991-04-24 1998-01-07 Morinaga Milk Industry Co., Ltd. Antimicrobial peptide and antimicrobial agent
JPH05209279A (ja) * 1991-10-29 1993-08-20 Canon Inc 金属膜形成装置および金属膜形成法
JP3049932B2 (ja) 1992-03-31 2000-06-05 株式会社島津製作所 プラズマｃｖｄ装置
JP3171762B2 (ja) 1994-11-17 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
US6009890A (en) * 1997-01-21 2000-01-04 Tokyo Electron Limited Substrate transporting and processing system
US6321680B2 (en) * 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
KR100557579B1 (ko) * 1997-11-05 2006-05-03 에스케이 주식회사 박막제조장치
JP2002531695A (ja) * 1998-12-01 2002-09-24 エス ケー コーポレーション 薄膜製造装置
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
US20030048591A1 (en) * 2001-09-10 2003-03-13 Saturn Vac Co., Ltd. Desmearing process/apparatus for pulse-type D.C. plasma
TW544071U (en) * 2002-04-02 2003-07-21 Nano Electronics And Micro Sys Electrode device for plasma treatment system
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
CN1874545A (zh) 2006-06-23 2006-12-06 王晓琦 一种在手持终端信息群发中加入接受者称呼的方法
JP4788504B2 (ja) * 2006-07-12 2011-10-05 富士電機株式会社 プラズマ処理装置の給電構造
US20080296261A1 (en) 2007-06-01 2008-12-04 Nordson Corporation Apparatus and methods for improving treatment uniformity in a plasma process
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Ｊｃｕ プラズマ処理装置及び方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
CN1875454A (zh) * 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺
CN1783431A (zh) * 2004-12-03 2006-06-07 东京毅力科创株式会社 等离子体处理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474327B (zh) * 2008-05-20 2016-03-16 诺信公司 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

Also Published As

Publication number Publication date
KR20090121225A (ko) 2009-11-25
KR101645191B1 (ko) 2016-08-12
CN101587827A (zh) 2009-11-25
US8372238B2 (en) 2013-02-12
US20130139967A1 (en) 2013-06-06
JP6078571B2 (ja) 2017-02-08
SG157301A1 (en) 2009-12-29
US20090288773A1 (en) 2009-11-26
CN103474327B (zh) 2016-03-16
KR101695632B1 (ko) 2017-01-13
SG176502A1 (en) 2011-12-29
JP5713542B2 (ja) 2015-05-07
JP2015146317A (ja) 2015-08-13
JP2009295580A (ja) 2009-12-17
US10109448B2 (en) 2018-10-23
TW201004493A (en) 2010-01-16
CN103474327A (zh) 2013-12-25
KR20160095654A (ko) 2016-08-11
TWI519212B (zh) 2016-01-21

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Granted publication date: 20130904