TW200948219A - Plasma processing apparatus and method - Google Patents

Abstract

The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

Description

200948219 VI. Description of the Invention: [Technical Field of the Invention] Embodiments of the present invention generally relate to a processing chamber to which a power supply is coupled to a processing chamber at a gas supply separation location. [Prior Art] As the demand for larger flat panel displays and solar panels continues to increase, φ is therefore inevitably increased in size of the substrate and the processing chamber. As the processing chamber size increases, higher RF currents are sometimes required to compensate for the dissipation of RF current (which occurs as the RF current moves away from the RF source). One method of depositing material on a substrate of a flat panel display or solar panel is plasma enhanced chemical vapor deposition (PECVD). In plasma enhanced chemical vapor deposition, a process gas can be introduced into the processing chamber through a showerhead and ignited into a plasma by an RF current applied to the showerhead. As the substrate size increases, the RF current applied to the showerhead also increases correspondingly. As the RF current increases, the premature decomposition of the gas before passing the V nozzle and the possibility of parasitic plasma formation above the nozzle increase. Therefore, there is a need in the art for equipment that allows for the transfer of sufficient RF current while reducing parasitic plasma formation. SUMMARY OF THE INVENTION The present invention generally includes a PECVD processing chamber having an RF power source coupled to a backplane at a location spaced from a source of gas. By supplying gas into the processing chamber at a location spaced from RF power 4 200948219, parasitic plasma can be reduced in the gas tubes that pass into the processing chamber. The gas can be supplied to the chamber at a plurality of locations. At various locations, the gas source can supply gas to the processing chamber by passing through a remote plasma source and an RF choke or RF resistor.

In one embodiment, the plasma processing apparatus is disclosed. The apparatus includes a processing chamber having a gas distribution plate and a generally rectangular backing plate; one or more power sources coupled to the backing plate at one or more first locations; and one or more gas sources, in three The other locations are coupled to the backplane, and the three other locations are each separated from the one or more first locations. The first of the three locations is placed at substantially equal distances between the two parallel sides of the backplane. . In another embodiment, a plasma enhanced chemical vapor deposition apparatus is disclosed. The apparatus includes a processing chamber having a slit valve opening through at least one of the walls; and a gas distribution showerhead disposed in the processing chamber and spaced from the substrate support. The equipment also includes and is spaced behind the gas distribution nozzle

Back plate. The backing plate can have a configuration in which three first positions of three positions are compared to the other. The device can also include a coupling to the backplane; and an RF power source coupled to the backplane. Position through its three openings. The two positions may be further away from the slit valve opening or more air sources, at three locations. In a position spaced from the two positions, in another embodiment, a method is disclosed. The method includes introducing a process gas into the chamber through the first location, igniting the process gas to electropolymerize, and depositing the material on the substrate. The method also includes introducing a cleaning gas into one or more remote plasma sources, igniting the cleaning gas into electricity in one or more remote electrospray 湃 φ pulp sources

Pulp, and through the first position and at least one flute.._N separated from the first position 200948219, the remotely ignited cleaning gas plasma flows free radicals into the chamber [Embodiment] The present invention generally includes PECVD4 A chamber having a power source coupled to the backing plate at a location spaced from the source. By supplying gas into the processing chamber at the rf power separation location, the chamber can be processed (4) to form parasitic plasma in the body tube. Gas can be supplied to the chamber at a plurality of locations. At various locations, the gas source can supply gas to the processing chamber by passing through a remote source and an rf choke or RF resistor. The invention is exemplarily described with reference to a chemical vapor deposition system for processing large-area substrates, such as from AppHed Matedals, inc(7)(10).

Branch of Clara, California AKT America, Inc.'s PECVD system. However, it should be understood that the apparatus and method can be used in other system configurations, including those designed to handle circular substrates. 1 is a schematic illustration of a power source 102 and a gas source 104 coupled to a processing chamber, in accordance with an embodiment of the present invention. As shown in FIG. 1, the power source 102 is coupled to the processing chamber 1 at position 1 〇6, and the position 1 〇6 is different from the position where the gas source 104 is transferred to the processing chamber 1〇〇1〇8A, 1〇8B. It is to be understood that although the two positions 1 〇 8 Α, i 〇 8B have been coupled to the gas source 104 to the processing chamber 100, the number of positions i 〇 8A, i 〇 8b is not limited to two. A single location 108A, 108B can be applied » or more than two locations 108A, 108B can be applied. When a plurality of positions i08A, l8B are used to couple the gas source 104 to the processing chamber 1〇〇, 'flow to the processing chamber 1〇〇200948219. The gas systems of the plurality of positions 108A, 108B are from the same gas source 1 〇 4. In one embodiment, the gas flows to various locations 1 〇 8 Α, 1 〇 8B of the processing chamber 1 可 may have its own exclusive gas source 104. It should also be understood that although a single location 1 〇 6 is shown to couple the power source 1 〇 2 to the processing chamber 100, the power source ioz can be coupled to the processing chamber 100 at a plurality of locations 丨〇6. In one embodiment, power source 102 can include an RF power source. Furthermore, although the display power source 1 〇 2 is coupled to the processing chamber 1 at a location 106 corresponding to the substantial center of the processing chamber 1 , the power source 102 may not correspond to the processing chamber ι The position of the substantial center is π6 coupled to the processing chamber 100. Although the air source 104 is shown coupled to the processing chamber 1 at positions l 8A, 108B (placed substantially away from the center of the processing chamber), the positions 1 〇 8 Α, 108 B are not so limited. The position ι〇8Α, ι〇8Β comparable position 1〇6 (where the power source 102 is coupled to the processing chamber 1〇〇) is closer to the center of the processing chamber 1〇〇. Fig. 2A is a schematic cross-sectional view showing a processing chamber 2A according to an embodiment of the present invention. The processing chamber 200 is a PECVD chamber. Processing chamber 200 has a chamber body 208. In the chamber body, the configurable base 204 is located opposite the gas distribution showerhead 210. Substrate 206 can be placed on susceptor 204. Substrate 206 can enter processing chamber 200 through slit valve opening 222. The substrate 206 can be raised and lowered by the susceptor 204 to handle, remove, and/or insert the substrate 206. The showerhead 210 can have a plurality of gas passages 212 that pass from the upstream side 218 through the showerhead 210 to the downstream side 22〇. The downstream side 220 of the showerhead 210 is the one of the side nozzles 210 that the nozzle faces the substrate 206 during processing, and is placed in the processing chamber 2 from the substrate 206 across the processing space 216. There is a gas chamber 214 behind the nozzle 21 . The plenum is between the showerhead 210 and the backing plate 202. The power source 224 can be powered by the power source 224 to the showerhead 21, and the power source 224 is coupled to the backplane 202 via the supply line 226. In an embodiment, power source 224 can include an RF power source. In the illustrated embodiment, the supply line 226 is coupled to the backing plate 2〇2 at a location corresponding to the substantial center of the backing plate 202. It is understood that the power source 224 can also be coupled to the backplane 2〇2 at other locations. Process gas may be delivered by gas source 234 through backing plate 202 to processing chamber 2''. Gas from gas source 234 can be moved through remote source 2 2 8 before reaching processing chamber 2〇〇. In one embodiment, the process gas system passing through the remote plasma source 228 is used for deposition and is therefore not ignited into a plasma in the remote plasma source 228. In another embodiment, the gas from the gas source 234 can be ignited into a plasma in the remote plasma source 228 and then sent to the processing chamber. The plasma from the remote plasma source 228 can be cleaned. The chamber 200 and its exposed components are processed. In addition, the plasma will clean the gas passing through the cooling block 230 and the choke or resistor 232 after the remote plasma source 228. When the plasma is ignited in the remote plasma source 228, the remote plasma source 228 can become very hot. Thus, the cooling block 230 can be placed between the choke or resistor 232 and the remote plasma source 228 to ensure that the choke or resistor 232 does not break due to the high temperature of the remote plasma source 228. It will be appreciated that although two separate gas sources 234 have been shown, the remote electrical energy sources 228 may share the same gas source 234. In addition, although the remote end 8 200948219 plasma source 228 is shown coupled between each of the gas sources 234 and the backing plate, the processing chamber 200 can have more or fewer distal plasma sources 228 coupled thereto. Figure 2B is a schematic cross-sectional view of the processing chamber 200 of Figure 2A showing the RF current path. The RF current has a "skin effect" whereby the RF current moves on the outer surface of the conductor and penetrates only a certain depth of the object i. Therefore, for a sufficiently thick object, the inside of the object can have zero detectable RF current, while the outer surface has RF current flowing on it and is regarded as RF "hot" ^ arrow "A" shows RF current by power Source 224 to the path taken by the nozzle 2^0. The RF current is moved by power source 224 along supply line 226 at beta position 236, which encounters backplane 202 and flows along the back side of backplane 202 and down to downstream face 220 of showerhead 210. The gas enters the processing chamber 2〇〇 through the backing plate 202 at a location 238. The arrow "Β" shows the distance between position 238 (where the gas enters the processing chamber 2〇〇) and position 236 (where the RF current hits the backing plate 202). As the RF current moves, it tends to dissipate. In other words, the RF current exiting power source 224 has a higher power level relative to the power level to the downstream line. In the embodiment shown in Fig. 2B, the RF current at position 236 has a higher power level relative to the current flowing along the back = 2〇2 through position 238 (the gas enters the processing chamber 2〇〇). Since the amount of power at position 238 is lower than position 236, the likelihood of igniting gas in tube 24G containing gas entering processing chamber 2GG can be reduced. Because of the reduced likelihood of process gas igniting in tube 240, parasitic flow in chamber 238, choke or resistor 232, cooling block 23, remote plasma source 228, and chamber 214 after nozzle 112 210 can be reduced. Plasma formation. In one embodiment, tube 240 can comprise a ceramic material. Figure 3 is a schematic isometric view of a backing plate 302 of a processing chamber 3 in accordance with an embodiment of the present invention. RF power can be supplied to the chamber 300 by coupling the RF power source 304 to the backplane 302 at location 324. While position 324 has been shown to correspond to the substantial center of backplane 302, it will be appreciated that location 324 can be located at many other points on board 324. In addition, more than one location 324 同时 can be applied simultaneously. The same gas source 308 can supply gas to the processing chamber 3 〇〇β. Although a single gas source 308 is shown, a plurality of gas sources 308 can be applied. The gas from the gas source 308 can be supplied to the remote plasma source 3 〇6 through the gas tube 310. It will be appreciated that although four remote plasma sources 3 〇 6 are shown, more and fewer remote plasma sources 306 can be applied. In addition, although the remote plasma source 3〇6 is shown placed on the backing plate 302, the remote plasma source 3〇6 can be placed adjacent to the backing plate 302. The gas from gas source 308 passes through gas tube 310 to remote plasma source 306. If the processing chamber 300 is operating in a clean mode, the gas in the remote plasma source 306 can be ignited into a plasma and supplied through the cooling block 314 and the choke or resistor 322 to the processing chamber 300. However, if the processing chamber is operating in a deposition mode, the gas will pass through the remote plasma source 3 〇 6 without burning the electricity. In the absence of ignited plasma, the cleaning gas enters the processing chamber in a non-plasma state and causes inefficient cleaning. If a remote plasma source 306 fails or does not operate effectively, the remote plasma source 306 can be turned off. If other remote plasma sources 3〇6 operate as desired, then 200948219, the clean gas flowing into the processing chamber 300 through the non-operating remote plasma source 306 will not ignite prior to entering the processing chamber 300. In the above aspect, the processing chamber 300 cannot be effectively cleaned.

Table I NF3 flow rate (slm) Operating RPS unit Non-operating RPS unit Cleaning time (seconds) 24 All without 24.2 36 All without 29.5 48 All without 38 48 3 1 87.3 48 3 1 92.2 48 2 2 248.3 48 2 2 84.4 48 2 2 118.9

Table I shows the effect of cleaning the chamber when one or more remote plasma sources are not operating. The chamber is cleaned after SiN deposition. In the data shown in Table I, when the RPS is not operating, gas continues to flow through the RPS unit to the chamber. As shown in Table I, when one or more RPS units are stopped, but the purge gas continues to flow, the cleaning time increases. However, when the RPS unit fails, but the gas flowing to the failed RPS unit is turned off, the cleaning time does not increase.

Table II nf3 flow rate (slm) 1RPS unit (SiN) 3/4 RPS unit (SiN) 4 RPS unit (SiN) 1RPS unit (a-Si) 3/4 RPS unit (a-Si) 4 RPS unit (a- Si) 20 50.4 38.9 36.4 24.8 27.9 23.2 24 45.4 34.9 32.3 21.4 27 43.0 32.6 30.6 19.9 22.6 19.0 36 29.7 26.1 11 200948219 | 48 22.8 22.5 16.8 11.4 As shown in Table π, by closing the gas flowing to the failed RPS unit, The cleaning rate can be substantially maintained. Thus, closing valve 312 in gas line 310 facilitates preventing cleaning gas from flowing through non-operating distal plasma source 306 and entering processing chamber 300 without being ignited into plasma in remote plasma source 306. Thus, by closing valve 312, the airflow can be diverted away from non-operating remote plasma source 306. Thus, the processing chamber 300 can be cleaned with a remote plasma source 306 that is less than the remote plasma source coupled to the backing plate 302. In one embodiment, the valve 312 can be located behind the distal plasma source 306. After passing through the remote plasma source 306, the gas can pass through the cooling block 3 14 . The cooling block 314 can be coupled through a cooling tube 318 to a cooling source 3 16 that flows cooling fluid to the cooling block 314. The cooling fluid can flow away from the cooling block 3 14 and back through the cooling tube 320 to the cooling fluid source 3 16 . Cooling block 314 provides a bond between remote plasma source 306 and choke or resistor 322, thereby reducing breakage of choke or resistor 322. After passing through the cooling block 314, the gas passes through a choke or resistor 322. In one embodiment, the choke or resistor 322 can comprise an electrically insulating material such as ceramic. Electrically insulating materials prevent RF power from moving along the gas flow path. Gas can enter the processing chamber 300 through the backing plate 302 at location 326. It will be appreciated that although four locations 326 are shown, more or fewer locations 326 may be applied to direct gas to the processing chamber 300. In addition, the position 326 does not need to be located near the corner of the back panel 3〇2. For example, location 326 can be located proximate to the center of backplane 302. 12 200948219 Additionally, location 324 (RF power coupled to backplane 3〇2) and location 326 (gas entering processing chamber 300) are not limited to the displayed position. Position 324 can be located near the edge of backing plate 302 and one or more gas supply locations 326 can be located in the area corresponding to the center of backing plate 302. Figure 4 is a schematic illustration of the light coupling between a remote plasma source and a processing chamber in accordance with an embodiment of the present invention. A choke or resistor 4 can be engaged between the cooling block 402 and the connection block 404. A resistor ❹ 400 is shown in Figure 4, but it is understood that a choke can be used instead. To create a choke, a metal coil (eg, a copper coil) is wound around the outside of the resistor 4〇〇. The connection block 404 can be coupled to the tube 406' which allows gas flowing through the choke or resistor 4 to flow into the backing plate. In one embodiment, the tube 4〇6 may comprise ceramic. Additionally, in one embodiment, the connection block 404 can comprise ceramic. In another embodiment, the connection block 404 can comprise stainless steel. In another embodiment, the connection block 404 can comprise aluminum. When the connection block 4〇4 contains metal, the tube 412 connecting the choke or resistor 400 and the tube 406 to the chamber may be electrically insulated. Cooling block 402 can comprise a metal. The choke or resistor 400 can include an inner tube 412 through which gas flows to reach the chamber. - In an embodiment, the inner tube 412 can comprise an electrically insulating material. In another embodiment, the inner tube 412 can comprise ceramic. Inner tube 412 can be located in sleeve 414. In one embodiment, the sleeve 414 can comprise an electrically insulating material. In another embodiment, the sleeve 414 can comprise a ceramic. The electrically insulating material allows the process gas to flow into the tube without exposing the gas to the RF current. The sleeve 414 and the tube 412 can be connected to the connection block 4〇4 at one end 41〇 and 13 200948219 to the cooling block 402 at the other end 408. Although not shown, in some embodiments a conductive material can be wrapped around the sleeve 414. Conductive materials can be used to provide additional ground current paths if needed. Figure 5 is a schematic isometric view of the backing plate 5〇2 of the processing chamber 500 in accordance with one embodiment showing three gas supply locations. The three locations are essentially located on the substrate and are assumed to be centered into three substantially equal regions. The dotted line is divided into three substantially equal areas. RF power can be provided to the chamber 5 by coupling the RF power source 504 to the backplane 502 at location 524. While position 524 has been shown to correspond to the substantial center of backing plate 502, it will be appreciated that position 524 can be located at many other locations on backing plate 524. In addition, more than one location 524 can be applied simultaneously. The same gas source 508 can supply gas to the processing chamber 5〇〇. It will be appreciated that although a single source 508 is shown, a plurality of sources 5 〇 8 may be employed. Gas leaving the gas source .5〇8 can be supplied to the remote plasma source 506 through the gas tube 510. Although the remote plasma source 5〇6 is shown on the backing plate 5〇2, the remote plasma source 506 can be placed adjacent to the backing plate 502. Gas from gas source 508 is passed through gas line 51 to remote plasma source 506. If the processing chamber 500 is operating in a clean mode, the gas in the remote plasma source 506 can be ignited into a plasma and then the free radicals can be supplied through the cooling block 514 and the choke or resistor 522 to the processing chamber 5A. However, if the processing chamber is operating in a deposition mode, the gas will pass through the remote plasma source 506 without being ignited into a plasma. In the absence of ignited plasma, the cleaning gas enters the processing chamber in a non-plasma state and causes inefficient cleaning. Closing the valve 512 in the gas line 5H) advantageously (iv) the purge-free gas stream 14 200948219 passes through the non-operating remote plasma source 506 and enters the processing chamber 500 without being ignited into a plasma in the remote plasma source 506. Thus, by closing valve 51, the airflow can be diverted away from non-operating distal plasma source 506. Thus, the processing chamber 500 can be cleaned with a remote plasma source 506 that is less than the remote plasma source coupled to the backing plate 502. - In the embodiment, the valve 512 can be located behind the distal plasma source 506 through the distal end. After the plasma source 506, the 'aircraft can pass through the cooling block 5 14 » The cooling block 514 can be coupled through a cooling tube 518 to a cooling source 5 16 that flows the cooling stream to the cold block 514. The cooling fluid can flow away from the cooling block 514 and back through the cooling tube 520 to the cooling fluid source 516. Cooling block 514 provides engagement between remote plasma source 506 and choke or resistor 522 to reduce breakage of choke or resistor 522. After passing through the cooling block 5 14 'gas' passes through a choke or resistor 522. In one embodiment, the choke or resistor 522 can comprise an electrically insulating material, such as ceramic. Electrically insulating material prevents RF power from moving along the airflow path _. The gas can be passed through position 526 through the backing plate 052 into the processing chamber 5〇〇. Further, the 'position 524 (RF power coupled to the backing plate 502) and the position 526 (the gas entering the processing chamber 500) are not limited to the displayed position. Position 524 can be located proximate the edge of backing plate 502 and one or more gas supply locations 526 can be located in the region corresponding to the center of backing plate 502. Fig. 6 is a schematic view showing a susceptor corresponding to the position of the gas introduction passage. As shown, the pedestal has been divided into three substantially equal regions, wherein the length (L1-L3) is substantially the same as the width (W1-W3). Each zone ^ center 602 corresponds to the position of the upper gas introduction passage through the backing plate.中 15 200948219 The heart 602 and the gas introduction channel are configured such that the hypothetical triangle (shown in dashed lines) has two substantially identical angles (α) and one other angle (β), the angle (β) may be the same as the other angles (α) or different. Whether the angle (β) is the same as the angle (α) will depend on the design of the pedestal. Although a pedestal is described, this configuration can equally be applied to the substrate such that the gas channel is centered on three substantially equal regions of the substrate disposed on the susceptor. In another embodiment, the configuration can be applied equally to the backplate itself such that the gas passageway is centrally located through the three substantially equal regions of the backing plate. In addition, the configuration can be equally applied to the showerhead or electrode such that the gas passage is centered on three substantially equal regions of the showerhead or electrode. Figure 7 is a schematic top plan view of an apparatus 700 in accordance with another embodiment. Device 700 can be a PECVD device. Apparatus 700 includes a backing plate 7〇2. The gas source 704 provides not only process gas to the processing chamber but also cleaning gas to the processing chamber. Although a single gas source 704 is shown, it is understood that more than one gas source can be applied. The process gas is supplied from the gas source 704 to the processing chamber during deposition. The process gas moves past the remote plasma source 7〇6, 708, 710, the cooling blocks 712, 714, 716 and the gas before passing through the backing plate 702 into the processing chamber at openings 724, 726, 728 (shown in phantom). Blocks 718, 720, 722 are supplied. Cooling blocks 712, 714, 716 are used to provide a connection between remote plasma sources 706, 708, 710 and gas supply blocks 718, 72, 722. The remote plasma sources 706, 708, 710 may cause such a high temperature as the plasma, such that a temperature gradient between the gas supply blocks 718, 72A, 722 and the remote plasma source 7〇6, 16 200948219 708, 710 may cause Either one is invalid. Cooling blocks 71 2, 714, 7 1 6 reduce the likelihood of system failure. The power source 73 is supplied from the power source 73 to the processing chamber, and the power source 730 is coupled to the backplane 702 through the matching network 732. As shown, the RF power is coupled to the backing plate 702 at a substantial center 734 of the backing plate 702. It can be appreciated that power source 730 can also be coupled to backplane 702 at a location other than center 734 of backplane 702 or alternatively. In addition, the rf power can be transmitted at a frequency between about 10 ΜΗζ and about 100 MHz. The position of the transfer rf power ® is spaced from the position of the transfer gas. As shown in FIG. 7, gas passes through the openings 724, 726, 728 through the backing plate 702 into the processing chamber, and the openings 724, 726, 728 are spaced from the center 734 of the backing plate 702 such that gas enters the processing chamber. The location is separated from the location at which power source 730 is coupled to backplane 702. In the embodiment shown in Fig. 7, the openings 724, 726, 728 are each substantially equally spaced from the center 734 of the backing plate 702. Thus, the openings 724, 726, 728 ❹ can be separated from the center 734 by equal radii 748, 75 〇, 752 (shown by dashed line 740). In one embodiment, the openings 724, 726, 728 may be spaced between about 25 and about 30 inches from the center 7 3 4 of the backing plate 7〇2. By spacing the openings 724, 726, 728 and the RF supply location, the likelihood of parasitic plasma ignition near or within the gas supply blocks 718, 72, 722 or cooling blocks 712, 714, 716 outside the processing chamber can be reduced. The location where the difference in rf potential is greatest in the chamber is where RF enters the chamber, as the RF return path is next to it as the RF current returns along the wall. By having a position where the RF# rate is coupled to the chamber at the point of separation from the supply gas into the chamber, the opening 17 200948219 port 724, 726, 728 is located at a position where the RF potential difference is reduced. Therefore, the possibility of parasitic plasma formation is reduced. Further, the openings 724, 726, 728 may be spaced apart by a predetermined angle a. In one embodiment, the angle α is 12 degrees. The first opening 724 showing the three openings 724, 726, 728 is substantially equally spaced from the sides 754, 756 of the backing plate 702 (as indicated by arrows C, D). The first opening 724 is spaced from the center 734 and is therefore not centered between the sides 736 and 738. The other two openings 726, 724 are not located on either side 736, 738,

Center between A ^ 754, 756. Because there are three openings 724, 726, 728, it is possible to adjust the process gas and/or cleaning gas free radicals that move through the backing plate 702 into the processing chamber. For example, valves 742, 744, 746 can be selectively opened and closed to allow process gas and/or cleaning gas radicals to enter the processing chamber through openings 724, 726, 728 in a predetermined manner. For example, the process gas and/or cleaning gas may be selectively delivered through an opening 724, 726, 728 without being conveyed through other openings 724, 726, 728. In effect, openings 724, 726, 728 (through which the gas enters the chamber) can be continuously switched in order to agitate the process gas and/or cleaning gas radicals in the process chamber. For the process gas, the plasma ignited in the chamber can be agitated by the above steps. Likewise, free radicals delivered from the distal plasma source 706, 708, 710 can be agitated. Apparatus 700 will have a slit valve opening into the processing chamber to allow the substrate to enter and exit the processing chamber. In the embodiment shown in Fig. 7, the side 736 of the device has a slit valve opening. Thus, opening 724 is placed further away from the slit valve opening than openings 726,728. 18 200948219 The slit valve opening in the chamber affects the plasma distribution in the chamber. Since the wall with the slit opening is different from the other three walls, the slit opening affects the plasma distribution. The RF current applied to the backplane 702 attempts to return to the helium power source 730. In this return, the RF current is moved back to the power rate source 703 along the chamber wall. Because of the difference in wall RF potential versus plasma rf potential, the RF current moving back to the power source 73 along the chamber wall affects the plasma. Since the wall having the slit valve opening π is different from the other walls, the opening between the slits is a difference in potential and affects the plasma distribution. Uneven plasma distribution can cause uneven deposition on the substrate. The process gas flowing into the chamber also affects the plasma distribution. The higher the plasma concentration, the more the material is deposited. It has been surprisingly found that when processing gas is delivered to the processing chamber through all three openings 724 726, 728, the amount of deposition that occurs on the central region of the substrate is higher than in other regions. Therefore, the deposited material will be "center high". However, when the process gas is supplied through only one opening 724 into the processing chamber and from flowing through the other openings 726, 728, the deposition on the substrate is more uniform. Supplying the process gas through an opening 724 without passing through the openings 726, 728 reduces the "center height" effect. The supply through the opening 724 instead of the opening 726 or the opening 728 is advantageous because the opening 724 is located at the substantial center between the sides 754 and 7% in the "Υ" direction, but not in the "X" direction. On the other hand, the openings 726, 728 are not centered in either the "X" or "Υ" direction. Since the opening 724 is centered between the side 754 and the side 756, the gas distribution in the "gamma" direction is expected to be substantially uniform. Since the opening 724 19 200948219 is not at the center 734 in the "X" direction, the gas distribution in the "x" direction may be uneven. Thus, opening 724 provides at least one controllable direction relative to openings 726, 728. During deposition, valves 742, 746 can be closed to ensure that process gas is only delivered through opening 724. On the other hand, during the chamber cleaning process, the free radicals transported from the plasma generated in the remote plasma source 7〇6, 7〇8, 710 can enter through all three openings 724, 726, 728 to effectively Clean the processing chamber. In one embodiment, the device 7 can operate as follows. Valves 742 and 746 can be closed to prevent process gases from entering the processing chamber through openings 726, 728. Thus, the process gas does not pass through the remote plasma source 7〇8, 710, the cooling blocks 714, 716, or the gas supply blocks 722, 724. Valve 744 will open and the process gas will move through remote plasma source 7〇6, cooling block 712, gas supply block 718 and through opening 724 into the processing chamber. The process gas will move through the remote plasma source 7〇6 without being ignited into a plasma. By supplying gas through only one opening 724 into the processing chamber, the amount of process gas ® can be controlled and the likelihood of high center deposition can be reduced. If gas is supplied through all three openings 724, 726, 728, the deposition may be uneven and the center may still deposit. The self-power source 730 provides RF current to the processing chamber and is delivered to the backplane 702 through the matching network 732 at a location spaced from the openings 724, 726, 728. The RF current ignites the process gas into a plasma to deposit material onto the substrate. After processing, the substrate can be removed and the process gas vented. After that, the processing chamber can be cleaned. Valves 742 and 746 are opened and the cleaning gas is delivered from gas source 7〇4 to remote plasma source 7〇6, 7〇8, 71〇 (which is ignited into electricity 20 200948219 slurry) from remote plasma source 706, γ The free radicals of 〇 8, 710 can then enter the processing chamber through cold blocks 712, 714, 716, gas supply blocks 718, 720, 722 and through openings 724, 726, 728. The cleaning gas is then etched or removed from the exposed surface of the processing chamber. The amount of clean gas is not an important consideration during the cleaning process. In fact, the more the better, to ensure that the chamber is properly cleaned. Therefore, the cleaning gas can be supplied through all three openings 724, 726, 728. As with deposition, homogeneity is also seen in the cleaning of the 0, but when cleaned, the surface of the chamber is relatively inert to the free radicals of the cleaning gas, so that the material deposited on the surface of the chamber is primarily removed. Very few (if any) chambers were removed. Therefore, the more cleaning gas radicals are, the better. In order to ensure that as many cleaning radicals as possible are present, all three openings 724, 726, 728 are applied. The supply position of the gas entering the chamber and the number of positions can be varied according to the embodiment just discussed 'during the cleaning process'. After cleaning, the processing chamber can be evacuated and the processing chamber ready for deposition. ® Figure 8 is a schematic top plan view of an apparatus 800 in accordance with another embodiment. Device 800 can be a PECVD device. Apparatus 800 includes a backing plate 8〇2. Gas source 804 provides not only process gas to the processing chamber but also clean gas to the processing chamber. Although a single gas source 804 is shown, it is understood that multiple gas sources can be applied. The process gas is supplied from the gas source 804 to the processing chamber during deposition. The process gas moves through the remote plasma source 806, 808, 810, cooling blocks 812, 814, 816 and the gas supply block before the openings 824, 826, 828 (shown in phantom) pass through the backing plate 802 into the processing chamber. 818, 21 200948219 820, 822. Cooling blocks 812, 814, 816 are used to provide a connection between remote plasma sources 806, 808, 810 and gas supply blocks 818, 820, 822. The remote plasma sources 806, 8〇8, 810 may be such that the plasma reaches such a high temperature that the temperature gradient between the gas supply blocks 818, 820, 822 and the remote plasma sources 806, 808, 810 may cause either Invalid. Cooling blocks 8 12, 8 14 and 8 1 6 reduce the possibility of system failure. The plurality of power sources 830, 832, 860, 862 provide RF power to the processing chamber. A plurality of power sources 830, 832, 860, 862 are connected to the backplane 8A through the matching network. As shown, the rf power sources mo, 832, 860, 862 are attached to the backplane at a location spaced from the substantial center 834 of the backplane 802. It will be appreciated that power sources 830, 832, 860, 862 may also be coupled to backplane 802 at other locations, including center 834 of backplane 8〇2. In addition, RF power can be transmitted at a frequency between about 1 〇 MHz and about 1 〇〇 MHz. The position at which the RF power is transmitted is spaced from the position at which the gas is delivered. Moreover, the phase of power delivered by different power sources 830, 832, 860, 862 can be different. As shown in Figure 8, gas passes through the openings gw, 826, 828 through the backing plate 802 into the processing chamber, and the openings 824, 826, 828 are spaced from the center 834 of the backing plate 802 'to allow gas to enter the processing chamber The location is separated from the location at which the power sources 830, 832, 860, 862 are coupled to the backplane 802. In the embodiment shown in Fig. 8, the openings 824, 826, 828 are each substantially equally spaced from the center 834 of the backing plate 802. Thus, the openings 824, 826, 828 can be separated from the center 834 by equal radii 848, 85, 852 (shown by dashed line 840). In one embodiment, the openings 824, 826, 22 200948219 828 can be spaced apart from the center 834 of the backing plate 802 by between about 25 and about 30 inches. By spacing the openings 824, 826, 828 and the RF supply location, the likelihood of parasitic plasma ignition near or within the gas supply blocks 818, 820, 822 or cooling blocks 812, 814, 816 outside the processing chamber can be reduced. The location where the RF potential difference is greatest in the chamber is where RF enters the chamber because the RF return path is next to it as the RF current returns along the wall. The openings 824, 826, 828 are located at a position where the RF potential difference is reduced by having a position at which the RF power is summed to the chamber at a location separated from the supply gas entering the chamber. Therefore, the possibility of parasitic plasma formation is reduced. Further, the openings 824, 826, 828 can be spaced apart by a predetermined angle α. In one embodiment, the angle a is 120 degrees. The first opening 824 showing the three openings 824, 826, 828 is substantially equally spaced from the sides 854, 856 of the backing plate 802 (as indicated by arrows E, F). The first opening 824 is spaced from the center 834 and therefore is not centered between the sides 836 and 838. The other two openings 826, 824 are not centered between either of the sides 836, 838, 854, 856. Because there are three openings 824, 826, 828, it is possible to adjust the process gas and/or cleaning gas free radicals that move through the backing plate 802 into the processing chamber. For example, valves 842, 844, 846 can be selectively opened and closed to allow process gas and/or cleaning gas radicals to enter the processing chamber through openings 824, 826, 828 in a predetermined manner. For example, the process gas and/or cleaning gas may be selectively delivered through an opening 824, 826, 828 without being transported through other openings 824, 826, 828. In effect, openings 824, 826, 828 (through which the gas enters the chamber) can be continuously switched in order to agitate the process gas and/or cleaning gas radicals in the chamber. For the process gas, the electricity ignited in the chamber can be agitated by the above steps. Likewise, free radicals transported from the remote plasma sources 806, 808, 810 can be agitated. Apparatus 800 will have a slit valve opening into the processing chamber to allow substrate entry and exit from the processing chamber. In the embodiment shown in Fig. 8, the side 836 of the device has a slit valve opening. Thus, opening 824 is placed further away from the slit valve opening than openings 826,828. The slit valve opening in the chamber affects the distribution of electropolymerization in the chamber. because

The wall with the slit valve opening is different from the other three walls, so the slit opening affects the plasma distribution. The RF current applied to the backplane 802 attempts to return to its power source 830, 832, 860, 862. In this return, the rf current moves back along the chamber wall to the power source 830, 832, 860, 862 » because the wall RF potential is different from the plasma RF potential, moving back along the wall to the power source 83 0, 83 2, 860, The RF current of 862 affects the plasma. Since the wall with the φ slit valve opening is different from the other walls, the slit valve opening affects the plasma distribution due to the difference in RF potential. Uneven plasma distribution can cause uneven deposition on the substrate. The process gas flowing into the chamber also affects the plasma distribution. The higher the plasma concentration, the more material is deposited. It has been surprisingly found that when all three openings 824, 8% are delivered to the processing chamber, the amount of deposition that occurs on the central region of the substrate is higher than in other regions. Therefore, the deposited material will be "center high." However, when only the treatment gas is supplied through an opening 824 into the processing chamber and from flowing through the other openings 826, 828 24 200948219, the deposition on the substrate is more uniform. _ . J J prisoner, only through an opening 824 and not through the openings 826, 828 supply * processing gas can reduce the "center height" effect. It is advantageous to supply the non-opening 820 or the opening 828 through the opening 8 2 4 instead of the opening 8, since the opening 824 is flat "ν η, - > ," in the direction of the substantial center between the sides 854, 856 And "X-direction & 8" in the X direction is the same as A. On the other hand, the openings 826, 828 are not centered in any of the "χ^"γ, 八" and γ" directions. Because the opening 824 is centered between the side 854 and the side 856, the gas distribution in the "gamma" direction is expected to be substantially uniform. Since the opening 824 is not in the center 834 of the "X" direction, the gas distribution in the "Γχ" direction may be uneven. Thus, opening 824 provides at least one controllable direction relative to openings 826, 828. During deposition, valves 842, 846 can be closed to ensure that process gas is only delivered through opening 824. On the other hand, during chamber cleaning, the free radicals transported from the remote propeller sources 806, 808, 810 can pass through all three openings 824, 826, 828 for effective cleaning. Chamber. In one embodiment, device 800 can operate as follows. Valves 842 and 846 can be closed to prevent process gases from entering the processing chamber through openings 826, 828. Therefore, the process gas does not pass through the remote plasma source 808, 810, the cooling blocks 814, 816, or the gas supply blocks 822, 824. Valve 844 will open and process gas will move through remote plasma source 806, cooling block 812, gas supply block 81 8 and through opening 824 into the processing chamber. The process gas will move through the remote plasma source 806 without being ignited into a plasma. By supplying gas through only one opening 824 into the processing chamber, the amount of process gas 25 200948219 can be controlled and the likelihood of high center deposition can be reduced. If gas is supplied through all three openings 824, 826, 828, the deposition may be uneven and a high center deposit may occur.

The RF sources 830, 832, 860, 862 provide RF current to the processing chamber and are delivered to the backplane 802 at a location spaced from the openings 824, 826, 828 through the matching network. The RF current ignites the process gas into an electrical device to deposit material onto the substrate. After processing, the substrate can be removed and the process gas vented. The chamber can then be cleaned. Valves 842 and 846 are opened and purge gas is supplied from gas source 804 to remote plasma sources 8〇6, 8〇8, 81〇 (which are ignited into plasma). Free radicals from remote plasma sources 8〇, 808, 810 can then enter the processing chamber through cooling blocks 812, 814, 816, gas supply blocks 818, 820, 822 and through openings 824, 826, 828. The cleaning gas then etches or removes contaminants from the exposed surface of the processing chamber. The amount of clean gas is not an important consideration during the cleaning process. In fact, the more the better, to ensure that the chamber is properly cleaned. Therefore, the cleaning gas can be supplied through all three openings 824, 826, 828. As with deposition, uniformity is also seen in cleaning' but when cleaned, the chamber surface is relatively inert to the cleansing gas radicals, so that the material deposited on the surface of the chamber is primarily removed. Very few (if any) chambers were removed. Therefore, the more ♦ the milk free radicals, the better. All three openings 824, 826, 828 are applied for the medium to save as many clean radicals as possible. According to the embodiment just discussed, the supply position and the number of positions of the gas entering the chamber can be changed during the mitigation process. After the number of defects is cleaned, the processing chamber can be evacuated and the processing chamber is again ready for deposition. 26 200948219 Figure 9 is a schematic top plan view of a device 900 in accordance with another embodiment. Device 900 can be a PECVD device. The device 9A includes a backing plate 9〇2. Gas source 904 provides not only process gas to the processing chamber but also clean gas to the processing chamber. Although it is not a single source of milk 9 〇 4, it can be understood that multiple gas sources can be applied. During the deposition process, process gas is supplied from gas source 904 to the processing chamber. The process gas moves past the remote plasma source 9〇6, the reference 908, 910, the cooling blocks 912, 914, 916 and before the openings 924, 926, 928 (shown in phantom) pass through the backing plate 902 into the processing chamber. Gas supply blocks 918, 920, 922. Cooling blocks 912, 914, 916 are used to provide a connection between remote plasma sources 906, 908, 910 and gas supply blocks 918, 920, 922. The remote plasma source 906, 908, 910 can achieve such a high temperature because of the plasma 'the temperature gradient between the gas supply blocks 918, 920, 922 and the remote plasma source 9 〇 6, 9 〇 8, 910 One is invalid. Cooling blocks 912, 914, 916 may reduce the likelihood of system failure ❶ φ from power source 930 providing RF power to the processing chamber, and power source 93 is coupled to backplane 902 at a plurality of locations through the matching network. As shown, the RF power source 930 is coupled to the backplane 902 at a spaced apart location from the substantial center 934 of the backplane 902. It will be appreciated that power source 93A can also be coupled to backplane 902 at other locations, including center 934 of backplane 902. In addition, the RF power can be transmitted at a frequency between about 〇 MHz and about 1 。. The position at which the RF power is transmitted is spaced from the position at which the gas is delivered. As shown in Figure 9, 'gas passes through the openings 924, 926, 928 through the 27 200948219 backing plate 902 into the processing chamber, and the openings 924, 926, 928 are spaced from the center 934 of the backing plate 902 such that gas enters the process. The position of the chamber is separated from the position at which the power source 930 is coupled to the backing plate 902. In the embodiment of Fig. 9, the openings 924, 926, 928 are each substantially equally spaced from the center 934 of the backing plate 902. Thus, openings 924, 926, 928 are separated from center 934 by equal radii 948, 950, 952 (indicated by dashed line 940). In one embodiment, the openings 924, 926, 928 can be spaced apart from the center 934 of the backing plate 902 by between about 25 and about 30 inches. By spacing the openings 924, 926, 928 and the RF supply location, the likelihood of parasitic plasma ignition near or within the gas supply blocks 918, 920, 922 or cooling blocks 912, 914, 916 outside the processing chamber can be reduced. The location where the RF potential difference is greatest in the chamber is where RF enters the chamber because the RF return path is next to it as the RF current returns along the wall. The openings 924, 926, 928 are located at a position where the RF potential difference is reduced by having a position to couple RF power to the cavity at a location spaced from the supply gas entering the chamber. Therefore, the possibility of parasitic plasma formation is reduced. Φ In addition, the openings 924, 926, 928 may be spaced apart by a predetermined angle α. In one embodiment, the angle α is 12 degrees. The first opening 924 showing the three openings 924, 926, 928 is substantially equally spaced from the sides 954, 956 of the backing plate 902 (as indicated by arrows G, Η). The first opening 924 is spaced from the center 934 and is therefore not centered between the sides 936 and 938. The other two openings 926, 924 are not centered between either of the sides 936, 938, 954, 956. Because there are three openings 924, 926, 928, it is possible to adjust the movement 28 200948219 through the backing plate 902 into the process chamber processing gas and / or cleaning gas free radicals. For example, valves 942, 944, 946 can be selectively opened and closed.

Process gas and/or cleaning gas radicals are passed through openings 924, 926, 928 into the processing chamber in a predetermined manner. For example, the process gas and/or cleaning gas may be selectively delivered through an opening 924, 926, 928 without being conveyed through other openings 924, 926, 928. In effect, openings 924, 926, 928 (through which the gas enters the chamber) can be continuously transitioned in order to move the processing gas to the process gas and/or cleaning gas radicals. For the process gas, the electrocoagulation ignited in the chamber can be agitated by the above steps. Likewise, free radicals transported from the distal plasma source 906, 908, 910 can be agitated. Apparatus 900 will have a slit valve opening into the processing chamber to allow substrate entry and exit from the processing chamber. In the embodiment shown in Fig. 9, the side 936 of the device has a slit valve opening. Therefore, the opening 924 is placed farther away from the slit valve opening than the openings 926, 928. The slit valve opening in the chamber affects the plasma distribution in the chamber. Since the wall with the slit valve opening is different from the other three walls, the slit valve opening affects the plasma distribution. The current applied to the backplane 9 attempts to return to its power source 930. In this return, the RF current moves back to the power source 930 along the chamber wall. Because of the difference in wall RF potential versus plasma rf potential, the =wall moves back to power source 93. The lamp current affects the plasma. Since the wall with the slit valve opening is different from the mounting, wall, and wall, the slit valve opening affects the electric (4) plasma knife cloth due to the difference in RF potential. Inhomogeneous plasma distribution can cause uneven deposition on the substrate. The process gas flowing into the chamber also affects the plasma distribution. Plasma > Chen Yue, 29 200948219 The more material deposits. It has been surprisingly found that when the process gas is delivered to the processing chamber through all three openings 924, 926, 928, the amount of deposition that occurs on the central region of the substrate is higher than in other regions. Therefore, the deposited material will be "center high." However, when the process gas is supplied through only one opening 924 into the processing chamber and from flowing through the other openings 92, 928, the deposition on the substrate is more uniform. Therefore, the supply of the process gas through only one opening 924 without passing through the openings 926, 928 can reduce the "center height" effect, and the supply through the opening 924 instead of the opening 926 or the opening 928 is advantageous because the opening 924 is at "Y". The direction is located at the substantial center between the sides 954, 956, but not in the "X" direction. On the other hand, the openings 926, 928 are not centered in either the "X" or "γ" directions. Since the opening 924 is centered between the side 954 and the side 956, the gas distribution in the "Y" direction is expected to be substantially uniform. Since the opening 924 is not in the center 934 of the "X" direction, the gas distribution in the "X" direction may be uneven. Thus, the opening 924 provides at least one controllable direction relative to the openings 926, 928. During deposition, valves 942, 946 can be closed to ensure that process gas is only delivered through opening 924. On the other hand, during the chamber cleaning process, the free radicals transported from the plasma generated in the remote plasma source 9〇6, 9〇8, 910 can enter through all three openings 924, 926 '928 to effectively Clean the processing chamber. In one embodiment, device 900 can operate as follows. Valves 942 and 946 can be closed to prevent process gases from entering the processing chamber through openings 926, 928. Therefore, the process gas does not pass through the remote plasma source 9〇8, cooling 30 200948219 blocks 914, 916 or gas supply blocks 922, 924. Valve 944 will open and process gas will move through remote electropolymer source 906, cooling block 912, gas supply block 918 and through opening 924 into the processing chamber. The process gas will move through the remote plasma source 906 without being ignited into a plasma. By feeding gas into the processing chamber through only one opening 924, the amount of process gas can be controlled and the likelihood of high center deposition can be reduced. If gas is supplied through all three openings 924, 926, 928, the deposition may be uneven and a high center deposit may occur. The self-power source 930 provides RF current to the processing chamber and is delivered to the backplane 902 at a location spaced from the openings 924, 926, 928 through the matching network. The RF current ignites the process gas into a plasma to deposit material onto the substrate. After processing, the substrate can be removed and the process gas vented. The processing chamber can then be cleaned. Valves 942 and 946 are opened and a purge gas is delivered from gas source 904 to remote plasma sources 906, 908, 910 (which are ignited into plasma). The radicals from the remote plasma source 906, 908, 910 can then pass through the cold φ block 912, 914 ' 916, gas supply blocks 918, 920, 922 and through the openings 924, 926, 928 into the processing chamber. The cleaning gas then etches or removes contaminants from the exposed surface of the processing chamber. Cleaning the amount of air is not an important consideration during the cleaning process. In fact, the more the better, to ensure that the chamber is properly cleaned. Therefore, the cleaning gas can be supplied through all three openings 924, 926, 928. As with deposition, uniformity is also observed during cleaning. When cleaning, the surface of the chamber is relatively inert to the free radicals of the cleaning gas, so that the material deposited on the surface of the chamber is primarily removed. Very few (if any) chambers were removed. Therefore, 31 200948219 The more cleaning gas free radicals, the better. To ensure that as many cleaning radicals as possible are present, all three openings 924, 926, 928 are applied. » According to the embodiment just discussed, during the cleaning process, the supply position of the gas into the chamber and the number of positions can be varied. After cleaning, the processing chamber can be evacuated and the processing chamber ready for deposition. By separating the position of the RF current coupling backplane and the location of the process gas to the backing plate, the formation of parasitic plasma in the gas supply to the processing chamber can be reduced. While the foregoing is a description of the embodiments of the present invention, it is intended to BRIEF DESCRIPTION OF THE DRAWINGS For a more detailed understanding of the above described features of the present invention, reference should be made It is to be understood, however, that the invention is not limited by the 1 is a schematic illustration of a power source 102 and a gas source 104 coupled to a processing chamber 100 in accordance with an embodiment of the present invention. Figure 2A is a schematic cross-sectional view of a processing chamber 200 in accordance with an embodiment of the present invention. Figure 2B is a schematic cross-sectional view showing the processing chamber 200 32 200948219 of Figure 2A of the RF current path. Figure 3 is a schematic isometric view of a backing plate 302 of a processing chamber 3 in accordance with an embodiment of the present invention. Figure 4 is a schematic illustration of the coupling between a remote plasma source and a processing chamber in accordance with an embodiment of the present invention. Figure 5 is a schematic isometric view of the backing plate 502 of the processing chamber 500 in accordance with an embodiment. Fig. 6 is a schematic plan view showing a substrate support member corresponding to a position of a gas introduction passage, according to an embodiment. Figure 7 is a schematic top plan view of an apparatus 700 in accordance with another embodiment. Figure 8 is a schematic top plan view of a device 8A according to another embodiment. Figure 9 is a schematic top plan view of an apparatus 900 in accordance with another embodiment. To facilitate understanding, the same component symbols have been used as much as possible to represent the same components that are common to the drawings. It is contemplated that elements disclosed in one embodiment may be used in other embodiments without particular limitation. [Main component symbol description] 100, 200, 300, 500 processing chambers 102, 224, 730, 830, 832, 860, 862, 930 power source 104, 234, 308, 508, 704, 804, 904 gas source, 106 108A, 108B, 23 6, 238, 324, 326, 524, 526 Position 202 ' 302, 502, 702 ' 802, 902 Backplane 33 200948219 204 Base 206 Substrate 208 Chamber Body 210 Head 212 Gas Channel 214 Air chamber 216 processing space 218 upstream side 220 downstream side 222 slit valve opening 226 supply line 228, 306, 506, 706, 708, 710, 806' 808, 810' 906, 908, 910 distal plasma source

230, 314, 402, 514, 712, 714, 716, 812, 814, 816, 912 '914 > 916 cooling block 232, 322, 400, 522 choke or resistor 240 ' 406 tube 304, 504 RF power Source 310, 510 gas tubes 312, 512, 742, 744, 746, 842, 844, 846, 942 '944, 946 valve 316 ' 516 cooling source 318 > 320 ' 518 ' 520 404 connecting block 412 inner tubes 602 , 734 '834, 934 cooling tube 408, 410 end 414 casing center 700 '800 '900 equipment 718, 720 '722, 818 '820, 822, 918 '920, 922 gas supply blocks 724, 726, 728, 824, 826, 828, 924, 926, 928 Open 34 200948219

732 matching network 736, 73 8' 754, 756, 836, 838, 854, 856' 936, 938 '954, 95 6 side 740, 840 '940 dashed line 748, 750, 752, 848, 850, 852, 948 , 950, 952 half 35

Claims (1)

200948219 VII. Patent application scope: 1. A plasma processing equipment, comprising at least: a processing chamber to 'having a gas distribution nozzle and a substantially rectangular back plate; - or more power sources, at - or more - Position_connected to the backplane; and one or more air sources coupled to the backplane at three other locations, the three φ other locations being separated from the one or more first-positions, wherein the three One of the positions is placed in a second position that is substantially equidistant from the two parallel sides of the backing plate. 2. The apparatus of claim 1, wherein the apparatus is a plasma enhanced chemical vapor deposition apparatus. 3. The device of claim 1, wherein the one or more power sources comprise a plurality of powers each coupled to the backplane at a separation location. 4. As described in claim 1 Apparatus wherein the three locations are spaced from the first location by a substantially equal distance and are spaced apart from each other by about 12 degrees. 5. The apparatus of claim 1, further comprising one or more 36 200948219 remote plasma sources coupled to the at least one gas source. 6. The device of claim 5, wherein the one or more remote plasma sources comprise three remote plasma sources. 7. As claimed in the first paragraph of the patent application, the invention further includes a slit valve opening through the first wall of one of the processing chambers. © 8. For example, in the seventh paragraph of the patent application scope, the saw blade is prepared from the 3 item described in the above, wherein the second position configuration is more backward than the one or more first injury sounds ^ ^ position Open the slit valve. 9. A plasma enhanced chemical vapor deposition apparatus, comprising: at least: a processing chamber having a slit valve opening through at least one wall; a gas distribution showerhead disposed in the processing chamber and associated with a substrate The support members are spaced apart; a backing plate is disposed behind the gas distribution showerhead and spaced apart from the gas distribution showerhead, the backing plate having three openings therethrough at three locations, wherein the two locations One of the positional configurations is further from the slit valve opening than the other two locations; one or more gas sources 'coupled to the backing plate at the three locations; and one or more RF power sources, The position of the three position intervals is coupled to the backplane. 10. The device of claim 9, wherein the one or more of the 37 200948219 RF power sources comprise an RF power source coupled to the backplane substantially at a center of the backplane. 11. The apparatus of claim 10, wherein the three locations are each configured to be substantially equidistant from the center of the backing plate. 12. The device of claim 5, wherein the three locations are spaced apart from each other by about 120 degrees. 13. The apparatus of claim 9 further comprising a remote plasma source coupled to the backplane at each of the three locations. 14. A method comprising: introducing a process gas into a chamber through a first position; igniting the process gas into a plasma; depositing material on a substrate; and introducing the cleaning gas into one or more remote plasmas Source: igniting the cleaning gas into a plasma in the one or more remote plasma sources; and cleaning gas from the distal end through the first position and at least one second position separated from the first position The slurry flows free radicals into the chamber. 38. The method of claim 14, wherein the chamber has a slit valve opening through a first wall of the chamber, and the free radical flows through the second position A position is closer to the slit valve opening. 16. The method of claim 5, wherein the method is a plasma-based chemical vapor deposition method. 17. The method of claim 16, wherein the chamber has a backing plate 'the ignited cleaning gas radicals and the processing gas system are introduced via the backing plate, and wherein the first location is associated with the One of the back plates is separated by a substantial center. 18. The method of claim 17, wherein the at least one other location comprises two locations, and wherein the two locations and the first location are substantially equally spaced from a substantial center of the backplane. 19. The method of claim 1, wherein the two locations are spaced apart from the first location by about 120 degrees. 20. The method of claim 14, further comprising applying an RF electrical bias to an electrode in the chamber at a location spaced from the first location. 39