CN111705307A

CN111705307A - Plasma vapor deposition apparatus

Info

Publication number: CN111705307A
Application number: CN202010540435.0A
Authority: CN
Inventors: 王凤明; 李王俊; 陈晨
Original assignee: Suzhou Maizheng Technology Co ltd; Suzhou Maxwell Technologies Co Ltd
Current assignee: Suzhou Maizheng Technology Co ltd; Suzhou Maxwell Technologies Co Ltd
Priority date: 2020-06-15
Filing date: 2020-06-15
Publication date: 2020-09-25
Also published as: WO2021253972A1

Abstract

The invention relates to a plasma vapor deposition device, which comprises a plasma vapor deposition structure, a plasma vapor deposition chamber and a gas-liquid separation chamber, wherein the plasma vapor deposition structure is provided with the plasma vapor deposition chamber; a cleaning plasma source supply structure having a cleaning plasma source chamber; and a connecting pipe having a cleaning supply passage communicating the plasma vapor deposition chamber and the cleaning plasma source chamber, and a cooling passage not communicating with the cleaning supply passage; the cleaning supply channel is separated from the cooling channel by a heat conducting partition wall; the cooling channel has at least one cooling inlet in communication with the outside and at least one cooling outlet in communication with the outside. According to the plasma vapor deposition equipment, the cooling medium can be input into the cooling channel to take away at least part of heat generated by compounding the fluorine-containing active groups on the inner wall of the clean supply channel, so that the potential safety hazards of scalding operators or fire disasters caused by high temperature are reduced, and the service life of the connecting pipeline is prolonged.

Description

Plasma vapor deposition apparatus

Technical Field

The invention relates to the field of plasma vapor deposition, in particular to plasma vapor deposition equipment.

Background

The statements herein merely provide background information related to the present application and may not necessarily constitute prior art.

The plasma vapor deposition technique is to ionize gas containing film constituent atoms by means of microwave or radio frequency, etc., to form plasma locally, the plasma is filled with a large amount of dissociated active groups with strong chemical activity, and the active groups are easily adsorbed on the surface of a substrate, so as to deposit a desired film.

The plasma vapor deposition chamber can form codeposition on the inner wall of the chamber in the film forming process, and the deposited films are likely to fall off due to stress to form particles, so that the quality of film forming is influenced. Plasma vapor deposition chambers typically require cleaning after multiple deposition processes are performed to remove deposition residues formed on the chamber walls.

Traditionally, to increase the etch rate during cleaning of a plasma vapor deposition chamber, a chamber is cleaned with a remote cleaning plasma. However, the cleaning plasma is generally a plasma containing fluorine reactive groups. In the process of cleaning the plasma from the plasma source chamber to the plasma vapor deposition chamber, a large amount of fluorine-containing active groups are compounded on the inner walls of the cleaning tool and the channel of the connecting pipeline, and generate great heat, thereby causing potential safety hazards such as scalding operators or fire disasters and reducing the service life of the connecting pipeline.

Disclosure of Invention

In view of the above, there is a need for a plasma vapor deposition apparatus that can reduce the potential safety hazard and improve the lifetime of the connecting pipe.

A plasma vapor deposition apparatus comprising:

a plasma vapor deposition structure having a plasma vapor deposition chamber;

a cleaning plasma source supply structure having a cleaning plasma source chamber; and

a connecting pipe having a cleaning supply passage communicating the plasma vapor deposition chamber and the cleaning plasma source chamber, and a cooling passage not communicating with the cleaning supply passage; the cleaning supply channel is separated from the cooling channel by a heat conducting partition wall; the cooling channel has at least one cooling inlet in communication with the outside and at least one cooling outlet in communication with the outside.

According to the plasma vapor deposition equipment, the cooling medium can be input into the cooling channel to take away at least part of heat generated by compounding the fluorine-containing active groups on the inner wall of the clean supply channel, so that the potential safety hazards of scalding operators or fire disasters caused by high temperature are reduced, and the service life of the connecting pipeline is prolonged.

In one embodiment, the cooling channel extends in the same direction as the cleaning supply channel.

In one embodiment, the cooling channel comprises a first sub-cooling channel; the first sub-cooling passage surrounds the cleaning supply passage perpendicular to a direction in which the cleaning supply passage extends.

In one embodiment, the connection pipe includes a first pipe division body and a second pipe division body, the first pipe division body encloses the cleaning supply channel, and the second pipe division body and an outer side wall of the first pipe division body enclose the first sub-cooling channel;

or, the connecting pipeline is integrally formed.

In one embodiment, the cooling channel comprises a second sub-cooling channel; the cleaning supply channel surrounds the second sub-cooling channel perpendicular to a direction in which the cleaning supply channel extends.

In one embodiment, the cooling channel extends helically around the cleaning feed channel in the direction in which the cleaning feed channel extends.

In one embodiment, the cooling channel has two cooling inlets and one cooling outlet; the cooling inlet is positioned at two ends of the cooling channel, and the cooling outlet is positioned in the middle of the cooling channel.

In one embodiment, the cooling inlet is provided with a water nozzle seat; and/or the cooling outlet is provided with a water pipe connector.

In one embodiment, the plasma vapor deposition apparatus further comprises a cooling medium supply device connected to the cooling inlet of the cooling channel to supply a cooling medium to the cooling channel.

In one embodiment, the outer surface of the connecting pipe is provided with an insulating layer.

Drawings

Fig. 1 is a schematic structural diagram of a plasma vapor deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a sectional view of the plasma vapor deposition apparatus shown in fig. 1.

Fig. 3 is a partially enlarged view of fig. 2.

100. A plasma vapor deposition apparatus; 110. a plasma vapor deposition structure; 130. cleaning the plasma source delivery structure; 150. connecting a pipeline; 151. cleaning the supply channel; 1511. cleaning the inlet; 1513. cleaning the outlet; 152. a thermally conductive spacer wall; 153. a cooling channel; 153a, a first sub-cooling channel; 1531. a cooling inlet; 1532. a water nozzle seat; 1533. a cooling outlet; 1534. a water pipe joint; 155. the first pipeline is split; 157. the second pipeline is split; 10. clamping a hoop; 20. a seal ring; 30. a center ring holder; 40. and (5) pressing a ring.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

As shown in fig. 1 and 2, a plasma vapor deposition apparatus 100 according to an embodiment of the present invention includes a plasma vapor deposition structure 110, a cleaning plasma source supply structure 130, and a connecting pipe 150. Wherein the plasma vapor deposition structure 110 has a plasma vapor deposition chamber. The cleaning plasma source delivery structure 130 has a cleaning plasma source chamber.

The connection pipe 150 has a cleaning supply passage 151 communicating the plasma vapor deposition chamber and the cleaning plasma source chamber, and a cooling passage 153 not communicating with the cleaning supply passage 151. The cleaning supply channel 151 is spaced from the cooling channel 153 by a heat conductive partition wall 152, so that heat generated in the cleaning supply channel 151 can be transferred to the cooling channel 153 through the heat conductive partition wall 152. The cooling channel 153 has at least one cooling inlet 1531 communicating with the outside and at least one cooling outlet 1533 communicating with the outside, so that the cooling medium can flow in from the cooling inlet 1531 and flow out from the cooling outlet 1533, so as to take away the heat transferred to the cooling channel 153, so that the temperature in the cooling channel 153 is reduced, and further, the heat in the cleaning supply channel 151 is continuously transferred to the cooling channel 153 through the heat-conducting separation wall 152, and the above-mentioned processes are repeated in a cycle.

The plasma vapor deposition apparatus 100 can take away at least part of heat generated by the fluorine-containing active groups compounded on the inner wall of the clean supply channel 151 by inputting a cooling medium into the cooling channel 153, thereby reducing potential safety hazards such as scalding operators or fire caused by high temperature, and prolonging the service life of the connecting pipeline 150.

Further, the service life of the connecting pipeline 150 is prolonged, the frequency of replacing the connecting pipeline 150 can be reduced, the production efficiency is improved, and the production cost is reduced.

In the conventional plasma vapor deposition apparatus, the service life of the connecting pipe may be reduced by heat generated by recombination of fluorine-containing active groups on the inner wall of the cleaning supply passage, so that in order to make the connecting pipe have a longer service life, higher requirements are placed on the material of the connecting pipe and the process for forming the connecting pipe. In the present application, the heat generated by the fluorine-containing active groups compounded on the inner wall of the clean supply channel 151 can be taken away by introducing the cooling medium into the cooling channel 153, so that the phenomenon that the temperature of the connecting pipeline 150 is high is avoided, that is, the potential safety hazard caused by high temperature is avoided, and the service life of the connecting pipeline 150 can also be prolonged. The requirements on the material of the connecting tube 150 and the process of forming the connecting tube 150 are lower with the same safety factor and the same service life requirement of the connecting tube 150.

In this embodiment, the cooling channel 153 is directly disposed on the connecting pipe 150, so that heat in the cleaning supply channel 151 can be directly transferred to the cooling channel 153 through the heat-conducting partition wall 152, and no other medium is disposed therebetween, thereby increasing the speed of heat transfer and improving the cooling effect.

In this embodiment, the cooling channel 153 is directly provided on the connecting pipe 150, so that the cooling effect of cleaning the supply channel 151 can be achieved without adding other structures when the plasma vapor deposition apparatus 100 is assembled, and the structure is simple.

In addition, the cooling channel 153 is arranged, so that the risk of temperature rise of the connecting pipeline 150 can be effectively avoided, and therefore, in the process of cleaning the plasma vapor deposition chamber, an operator can more conveniently perform other overhaul and maintenance on the plasma vapor deposition device 100, and the operation efficiency is improved.

Furthermore, the arrangement of the cooling channel 153 can effectively avoid the risk of temperature rise of the connecting pipeline 150, so that in the plasma vapor deposition equipment 100, the structure adjacent or close to the connecting pipeline 150 does not need to be formed by high-temperature-resistant materials, the requirement on the performance of the structure can be met, and the preparation cost of the plasma vapor deposition equipment 100 can be reduced to a certain extent.

Specifically, in the present embodiment, the extending direction of the cooling channel 153 coincides with the extending direction of the cleaning supply channel 151. Accordingly, the direction in which the cooling medium flows along the cooling channels 153 is identical to or opposite to the direction in which the cleaning plasma flows along the cleaning supply channels 151, so that the intervals between each segment of the cleaning supply channels 151 and the cooling channels 153 are the same, thereby making the heat dissipation of the cleaning supply channels 151 more uniform.

It can be understood that the cleaning supply channel 151 communicates the plasma vapor deposition chamber and the cleaning plasma source chamber, and is affected by the plasma vapor deposition mechanism and the cleaning plasma source supply structure 130, the portion of the cleaning supply channel 151 connected to the plasma vapor deposition chamber extends in a direction different from the direction in which the position corresponding to the cooling channel 153 extends, and the portion of the cleaning supply channel 151 connected to the cleaning plasma source chamber extends in a direction different from the direction in which the position corresponding to the cooling channel 153 extends.

Specifically, in the present embodiment, the cooling passage 153 includes a first sub-cooling passage 153 a. The first sub-cooling passage 153a surrounds the cleaning supply passage 151, perpendicular to the direction in which the cleaning supply passage 151 extends, with detailed reference to fig. 2. In other words, the cross-section of the first sub-cooling passage 153a is annular in a direction perpendicular to the direction in which the cleaning supply passage 151 extends, and surrounds the cross-section of the cleaning supply passage 151 at the same position. Therefore, the heat generated in the cleaning supply channel 151 can be dissipated from the periphery of the cleaning supply channel 151, and the local over-high temperature of the cleaning supply channel 151 is avoided.

Further, in this embodiment, in a direction perpendicular to the extension direction of the cleaning supply channel 151, the cross section of the cleaning supply channel 151 is circular, the cross section of the first sub-cooling channel 153a is circular, and the centers of circles of the cross sections of the cleaning supply channel 151 and the first sub-cooling channel 153a at the same position are overlapped, so that heat generated in the cleaning supply channel 151 can be more uniformly dissipated from the periphery, and further, the local temperature of the cleaning supply channel 151 is better prevented from being too high.

Of course, it will be understood that in other possible embodiments, the cleaning supply channels are not limited to being circular in shape in the direction perpendicular to the direction in which they extend, but may also be square, rectangular, diamond, triangular, oval, etc. in regular or irregular shapes. Accordingly, in other possible embodiments, the first sub-cooling passage is not limited to being circular in the direction perpendicular to the direction in which the cleaning supply passage extends, and may be a regular or irregular shape such as a square, a rectangle, a diamond, a triangle, an ellipse, or the like. Further, in another possible embodiment, the centers of the cross sections of the cleaning supply channel and the first sub-cooling channel at the same position in the direction perpendicular to the extension of the cleaning supply channel may also be misaligned.

Specifically, in the present embodiment, the connection duct 150 includes a first duct division body 155 and a second duct division body 157, the first duct division body 155 encloses the clean supply passage 151, and the second duct division body 157 encloses the first sub-cooling passage 153a with an outer side wall of the first duct division body 155. The separate first and second

pipe division bodies

155 and 157 have simple structures, so that when the connection pipe 150 is manufactured, a complicated mold is not required, the first and second

pipe division bodies

155 and 157 are manufactured by using a simple mold, and then the first and second

pipe division bodies

155 and 157 are assembled to form the connection pipe 150.

It is understood that, in the present embodiment, the heat-conducting separation wall 152 is a portion of the first pipe division body 155 corresponding to the cooling channel 153. Specifically, in the present embodiment, the first pipe division body 155 is integrally formed of one material. It will be appreciated that in other possible embodiments, the first pipe division may also be formed of different materials, ensuring that the portion of the first pipe division corresponding to the cooling channel is thermally conductive to conduct away heat within the cleaning supply channel.

Of course, it is understood that the connection pipe is not limited to be assembled by the first pipe division body and the second pipe division body in other possible embodiments. The connecting duct can also be formed integrally or assembled from other structurally different elements.

In the present application, the cross-sections of the cooling channels 153 at different positions in the direction perpendicular to the direction in which the cleaning supply channels 151 extend are the same in shape and size. It will be appreciated that in alternative embodiments, the cross-sections of the cooling passages 153 may be shaped and sized differently at different locations. Alternatively, at a position where heat generation is large in the cleaning supply channel 151, the size of the cross section of the cooling channel 153 in the direction perpendicular to the direction in which the cleaning supply channel 151 extends is large, so that heat therein can be more rapidly transferred to the cooling channel 153. Specifically, the sectional size of the cooling passage 153 may be increased by increasing the size of the inner diameter of the corresponding position of the second pipe division 157; the sectional size of the cooling passage 153 may also be increased by reducing the thickness of the corresponding position of the first pipe division body 155. In addition, if the sectional size of the cooling channel 153 is increased by reducing the thickness of the corresponding position of the first duct division body 155, it is possible to further facilitate the discharge of the heat in the clean supply channel 151.

In this embodiment, the cooling channel 153 has two cooling inlets 1531 and one cooling outlet 1533, the two cooling inlets 1531 are respectively located at two ends of the cooling channel 153, and the cooling outlet 1533 is located at the middle position of the cooling channel 153, so that the path for the cooling medium to flow from the cooling inlet 1531 to the cooling outlet 1533 of the cooling channel 153 is short, and further, the phenomenon that the temperature of the cooling medium is increased due to the long path for the cooling medium flowing in the cooling channel 153 is high, and further, the phenomenon that the heat generated in the corresponding position of the cleaning supply channel 151 is difficult to dissipate is avoided.

In this embodiment, the cleaning supply passage 151 has one cleaning inlet 1511 connected to the cleaning plasma source chamber and two cleaning outlets 1513 connected to the plasma vapor deposition chamber so that the cleaning plasma can enter the plasma vapor deposition chamber from different positions, thereby facilitating the cleaning of the plasma vapor deposition chamber. Specifically, in the present embodiment, the cooling inlet 1531 of the cooling channel 153 is located near the cleaning outlet 1513, and the cooling outlet 1533 of the cooling channel 153 is located near the cleaning outlet 1513. It will be appreciated that in other possible embodiments, the locations of the cooling inlet and cooling outlet are not limited thereto, and may be provided at other locations in the cooling passage as desired.

Of course, it is understood that in another possible embodiment, the number of the cooling inlets is not limited to two, and the number and the positions of the cooling inlets and the cooling outlets may be set according to the extension length of the cooling channel and the intensity of heat generation in the cleaning attack channel. Likewise, in other possible embodiments, the number of cleaning inlets and cleaning outlets may be adjusted as desired.

Optionally, the cooling medium matched to the cooling channel 153 is water. It will be appreciated that in other possible embodiments the cooling medium is not limited to water, but may be any other medium that can absorb heat.

More specifically, in this embodiment, the cooling inlet 1531 is provided with a nozzle seat 1532 to facilitate docking of the cooling passage 153 with a cooling medium supply; the cooling outlet 1533 is provided with a water connector 1534 so as to control whether the cooling medium in the cooling passage 153 flows out of the cooling passage 153 by opening or closing the water connector 1534. Of course, the flow rate of the cooling medium that may flow out of the cooling outlet 1533 may also be controlled by the water tube connector 1534. Therefore, under the condition that the cooling requirement of the cleaning supply channel 151 is met, the using amount of the cooling medium can be reduced by controlling the flow rate of the cooling medium, and the waste of the cooling medium is avoided.

The connecting pipe 150 is an aluminum pipe. That is, the connection pipe 150 is formed of an aluminum material. It is understood that in other possible embodiments, the connecting tube 150 is not limited to an aluminum tube, but may be formed of other materials to ensure that the heat-conducting partition wall 152 in the connecting tube 150 has heat-conducting effect.

Optionally, the inner surface of the cleaning supply channel 151 has a hard anodized layer. The hard anodized layer has oxidation resistance so as to prevent fluorine-containing active groups from being compounded on the inner surface of the clean supply passage 151 to corrode the connection pipe 150, thereby improving the service life of the connection pipe 150.

Referring to fig. 3, in the present embodiment, the connection pipe 150 is fixedly connected to the plasma vapor deposition structure 110 by the yoke 10. More specifically, the first pipe division body 155 is fixedly connected with the plasma vapor deposition structure 110 by the yoke 10. In this embodiment, the clamp 10 is a butterfly clamp. Of course, it will be appreciated that the clip is not limited to a butterfly clip, but may be other types of clips in alternative embodiments.

Referring to fig. 3, in the embodiment, the end of the connection pipe 150 connected to the plasma vapor deposition structure 110 is provided with the center ring holder 30, the sealing ring 20 is arranged between the hoop 10 and the center ring holder 30, and the sealing ring 20 is also in sealing engagement with the first pipe split body 155, so as to achieve a better sealing effect. Specifically, in the present embodiment, the seal ring 20 is a fluorine rubber seal ring. It is understood that in other possible embodiments, the sealing and connection between the connection pipe 150 and the plasma vapor deposition structure 110 is not limited thereto, and the connection can be well sealed.

Referring to fig. 2, in the present embodiment, the connection pipe 150 is connected to the cleaning plasma source supply structure 130 through the pressure ring 40. Specifically, the first pipe division body 155 is connected to the cleaning plasma source supply structure 130 through the pressure ring 40. It will be appreciated that in other possible embodiments, the connecting conduit 150 may be otherwise sealingly connected to the clean plasma source supply structure 130.

Optionally, in a possible embodiment, the plasma vapor deposition apparatus further comprises a cooling medium supply device connected to the cooling inlet of the cooling channel to supply a cooling medium to the cooling channel. Specifically, the cooling medium supply device may be a water tank or the like. Of course, in another possible embodiment, the cooling medium is not limited to water, but may be other medium capable of absorbing heat, such as liquid nitrogen, and the like, and accordingly, the cooling medium supply device is a liquid nitrogen supply device.

Optionally, in one possible embodiment, the outer surface of the connecting duct is provided with an insulating layer. Thereby avoid fluorine-containing active group complex at the internal surface of clean supply channel and the heat that produces for the surface temperature of connecting tube is higher, and then avoids operating personnel mistake to bump the connecting tube and lead to the scald, also avoids locating the structure of connecting tube position nearby and is heated and impaired.

It will be appreciated that in other possible embodiments, the structure of the cooling passages is not limited thereto. Optionally, in one possible embodiment, the cooling channel comprises a second sub-cooling channel. Perpendicular to the direction in which the clean feed channel extends, the clean feed channel surrounds the second sub-cooling channel. I.e. perpendicular to the direction in which the cleaning feed channel extends, the cleaning feed channel is annular in cross-section and surrounds the second sub-cooling channel.

Alternatively, in another possible embodiment, the cooling passage is not limited to having only the first sub-cooling passage or the second sub-cooling passage, and may also have both the first sub-cooling passage and the second sub-cooling passage.

Further, in other possible embodiments, the structure of the cooling passage is not limited thereto. For example, in one possible embodiment, the cooling channel extends helically around the cleaning feed channel in the direction in which the cleaning feed channel extends. For another example, in one possible embodiment, the cooling channel includes several sub-cooling channels that are parallel to the cleaning feed channel. Further, optionally, several sub-cooling channels are distributed around the clean feed channel.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. A plasma vapor deposition apparatus, comprising:

a plasma vapor deposition structure having a plasma vapor deposition chamber;

2. The plasma vapor deposition apparatus according to claim 1, wherein an extending direction of the cooling channel coincides with an extending direction of the cleaning supply channel.

3. The plasma vapor deposition apparatus of claim 2, wherein the cooling channel comprises a first sub-cooling channel; the first sub-cooling passage surrounds the cleaning supply passage perpendicular to a direction in which the cleaning supply passage extends.

4. The plasma vapor deposition apparatus according to claim 3, wherein the connection duct includes a first duct division body and a second duct division body, the first duct division body enclosing the cleaning supply passage, the second duct division body enclosing the first sub-cooling passage with an outer side wall of the first duct division body;

or, the connecting pipeline is integrally formed.

5. The plasma vapor deposition apparatus according to claim 2, wherein the cooling channel comprises a second sub-cooling channel; the cleaning supply channel surrounds the second sub-cooling channel perpendicular to a direction in which the cleaning supply channel extends.

6. The plasma vapor deposition apparatus according to claim 1, wherein the cooling channel extends helically around the cleaning feed channel in a direction in which the cleaning feed channel extends.

7. The plasma vapor deposition apparatus according to any one of claims 1 to 6, wherein the cooling channel has two cooling inlets and one cooling outlet; the cooling inlet is positioned at two ends of the cooling channel, and the cooling outlet is positioned in the middle of the cooling channel.

8. The plasma vapor deposition apparatus according to any one of claims 1 to 6, wherein the cooling inlet is provided with a nozzle holder; and/or the cooling outlet is provided with a water pipe connector.

9. The plasma vapor deposition apparatus according to any one of claims 1 to 6, further comprising a cooling medium supply device connected to the cooling inlet of the cooling passage to supply a cooling medium to the cooling passage.

10. Plasma vapour deposition apparatus according to any one of claims 1 to 6, wherein the outer surface of the connecting duct is provided with a thermally insulating layer.