CN101553962B - 形成在单个薄片上的半导体激光器谐振腔 - Google Patents

形成在单个薄片上的半导体激光器谐振腔 Download PDF

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Publication number
CN101553962B
CN101553962B CN2006800393451A CN200680039345A CN101553962B CN 101553962 B CN101553962 B CN 101553962B CN 2006800393451 A CN2006800393451 A CN 2006800393451A CN 200680039345 A CN200680039345 A CN 200680039345A CN 101553962 B CN101553962 B CN 101553962B
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laser
substrate
cavity
etching
length
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Chinese (zh)
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CN101553962A (zh
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A·A·贝法
W·兰斯
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Magnesium Microwave Technology Co ltd
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BinOptics LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/22—Apparatus or processes for the manufacture of optical heads, e.g. assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
CN2006800393451A 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔 Active CN101553962B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71088205P 2005-08-25 2005-08-25
US60/710,882 2005-08-25
PCT/US2006/033058 WO2007025032A2 (en) 2005-08-25 2006-08-24 Semiconductor laser cavity formed on singulated chip

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201010537742XA Division CN102013631B (zh) 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔
CN2010105377059A Division CN102035135B (zh) 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔

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CN101553962A CN101553962A (zh) 2009-10-07
CN101553962B true CN101553962B (zh) 2012-07-04

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CN2006800393451A Active CN101553962B (zh) 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔
CN201010537742XA Active CN102013631B (zh) 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔
CN2010105377059A Active CN102035135B (zh) 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔

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CN2010105377059A Active CN102035135B (zh) 2005-08-25 2006-08-24 形成在单个薄片上的半导体激光器谐振腔

Country Status (5)

Country Link
US (4) US7408183B2 (cg-RX-API-DMAC7.html)
EP (1) EP1917687A2 (cg-RX-API-DMAC7.html)
JP (2) JP5624720B2 (cg-RX-API-DMAC7.html)
CN (3) CN101553962B (cg-RX-API-DMAC7.html)
WO (1) WO2007025032A2 (cg-RX-API-DMAC7.html)

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USD580890S1 (en) * 2007-02-09 2008-11-18 Panasonic Corporation Light source of light-emitting diode
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USD586764S1 (en) * 2007-02-09 2009-02-17 Panasonic Corporation Light source of light-emitting diode
USD580377S1 (en) * 2007-02-09 2008-11-11 Panasonic Corporation Light source of light-emitting diode
US8064493B2 (en) 2009-06-12 2011-11-22 Binoptics Corporation Surface emitting photonic device
EP2643907A4 (en) * 2010-10-25 2017-12-06 MACOM Technology Solutions Holdings, Inc. Long semiconductor laser cavity in a compact chip
US8934512B2 (en) * 2011-12-08 2015-01-13 Binoptics Corporation Edge-emitting etched-facet lasers
EP4228109A3 (en) * 2012-05-08 2023-10-25 MACOM Technology Solutions Holdings, Inc. Lasers with beam-shape modification
US10852492B1 (en) * 2014-10-29 2020-12-01 Acacia Communications, Inc. Techniques to combine two integrated photonic substrates
US11025029B2 (en) * 2015-07-09 2021-06-01 International Business Machines Corporation Monolithic III-V nanolaser on silicon with blanket growth
US10170455B2 (en) 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
TWI552385B (zh) * 2015-09-04 2016-10-01 錼創科技股份有限公司 發光元件
CN105826813B (zh) * 2016-05-06 2019-02-05 华中科技大学 一种基于高阶表面光栅的单模激光器
USD825148S1 (en) * 2016-06-08 2018-08-14 Troy Horning Clothing accessory to prevent slippage
US9964702B1 (en) * 2016-10-13 2018-05-08 Oracle International Corporation Surface-normal optical coupling interface with thermal-optic coefficient compensation
KR101929465B1 (ko) * 2016-10-18 2019-03-14 주식회사 옵텔라 광학모듈
CN110178275B (zh) * 2017-01-19 2021-01-22 三菱电机株式会社 半导体激光元件、半导体激光元件的制造方法
JP6394832B1 (ja) * 2017-11-17 2018-09-26 三菱電機株式会社 半導体レーザ装置
DE102018111319A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
US11011424B2 (en) * 2019-08-06 2021-05-18 Applied Materials, Inc. Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
US20210313760A1 (en) * 2020-04-06 2021-10-07 Asahi Kasei Kabushiki Kaisha Method for manufacturing semiconductor laser diode and semiconductor laser diode
CN117008087B (zh) * 2022-04-29 2024-11-05 深圳市速腾聚创科技有限公司 基于平面波导芯片的光收发装置及激光雷达
CN119596480A (zh) * 2023-09-11 2025-03-11 华为技术有限公司 一种封装结构、光模块和光通信设备

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Also Published As

Publication number Publication date
US8290012B2 (en) 2012-10-16
JP2012015542A (ja) 2012-01-19
US7408183B2 (en) 2008-08-05
US20100091811A1 (en) 2010-04-15
US20080298413A1 (en) 2008-12-04
US20070045637A1 (en) 2007-03-01
EP1917687A2 (en) 2008-05-07
WO2007025032A2 (en) 2007-03-01
CN102013631B (zh) 2012-07-04
CN101553962A (zh) 2009-10-07
US20100091809A1 (en) 2010-04-15
CN102035135A (zh) 2011-04-27
US7830939B2 (en) 2010-11-09
CN102035135B (zh) 2013-02-27
WO2007025032A3 (en) 2009-05-07
JP2009506550A (ja) 2009-02-12
JP5624720B2 (ja) 2014-11-12
CN102013631A (zh) 2011-04-13

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