CN101501654A - 单次可编程存储单元的新结构与制造方法 - Google Patents
单次可编程存储单元的新结构与制造方法 Download PDFInfo
- Publication number
- CN101501654A CN101501654A CNA2007800301168A CN200780030116A CN101501654A CN 101501654 A CN101501654 A CN 101501654A CN A2007800301168 A CNA2007800301168 A CN A2007800301168A CN 200780030116 A CN200780030116 A CN 200780030116A CN 101501654 A CN101501654 A CN 101501654A
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- Prior art keywords
- mos transistor
- drift region
- otp
- drain electrode
- storage unit
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 60
- 229920005591 polysilicon Polymers 0.000 claims abstract description 58
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 30
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000003860 storage Methods 0.000 claims description 52
- 230000008878 coupling Effects 0.000 claims description 45
- 238000010168 coupling process Methods 0.000 claims description 45
- 238000005859 coupling reaction Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 14
- 230000000295 complement effect Effects 0.000 claims description 11
- 239000007943 implant Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 230000006872 improvement Effects 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 2
- 238000007667 floating Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
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- 238000005538 encapsulation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/518,001 | 2006-09-07 | ||
US11/518,001 US7602029B2 (en) | 2006-09-07 | 2006-09-07 | Configuration and method of manufacturing the one-time programmable (OTP) memory cells |
PCT/US2007/019587 WO2008030583A2 (en) | 2006-09-07 | 2007-09-07 | New configuration and method of manufacturing the one-time programmable (otp) memory cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101501654A true CN101501654A (zh) | 2009-08-05 |
CN101501654B CN101501654B (zh) | 2012-05-02 |
Family
ID=39157877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800301168A Active CN101501654B (zh) | 2006-09-07 | 2007-09-07 | 单次可编程存储单元的新结构与制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7602029B2 (zh) |
CN (1) | CN101501654B (zh) |
TW (1) | TWI339440B (zh) |
WO (1) | WO2008030583A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102081680B (zh) * | 2009-11-30 | 2012-08-01 | 上海华虹Nec电子有限公司 | Pmos otp器件的建模方法 |
CN104424377A (zh) * | 2013-08-30 | 2015-03-18 | 台湾积体电路制造股份有限公司 | 具有共享pode的标准集成电路单元的泄漏预估的系统和方法 |
CN108346659A (zh) * | 2017-01-23 | 2018-07-31 | 中芯国际集成电路制造(上海)有限公司 | 一种可编程存储单元及电子装置 |
CN109103189A (zh) * | 2018-07-11 | 2018-12-28 | 上海华虹宏力半导体制造有限公司 | 由n型电容耦合晶体管构成的一次可编程器件 |
CN110649102A (zh) * | 2018-06-27 | 2020-01-03 | 力旺电子股份有限公司 | 可编程可抹除的非挥发性存储器 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080191258A1 (en) * | 2007-02-09 | 2008-08-14 | Chartered Semiconductor Manufacturing, Ltd. | Low voltage coefficient mos capacitors |
US8592900B2 (en) * | 2010-11-03 | 2013-11-26 | Texas Instruments Incorporated | Drain extended CMOS with counter-doped drain extension |
US8324663B2 (en) | 2011-04-01 | 2012-12-04 | Texas Instruments Incorporated | Area efficient high-speed dual one-time programmable differential bit cell |
US9305931B2 (en) * | 2011-05-10 | 2016-04-05 | Jonker, Llc | Zero cost NVM cell using high voltage devices in analog process |
US8741697B2 (en) | 2011-09-14 | 2014-06-03 | Semiconductor Components Industries, Llc | Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same |
US8724364B2 (en) | 2011-09-14 | 2014-05-13 | Semiconductor Components Industries, Llc | Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same |
US8530283B2 (en) | 2011-09-14 | 2013-09-10 | Semiconductor Components Industries, Llc | Process for forming an electronic device including a nonvolatile memory structure having an antifuse component |
CN103094323A (zh) * | 2011-11-04 | 2013-05-08 | 上海华虹Nec电子有限公司 | 双层多晶硅一次性可编程器件结构 |
TWI555177B (zh) * | 2014-01-15 | 2016-10-21 | 林崇榮 | 一次編程記憶體及其相關記憶胞結構 |
KR102166525B1 (ko) * | 2014-04-18 | 2020-10-15 | 에스케이하이닉스 주식회사 | 단일층의 게이트를 갖는 불휘발성 메모리소자 및 그 동작방법과, 이를 이용한 메모리 셀어레이 |
KR102227554B1 (ko) * | 2014-11-18 | 2021-03-16 | 에스케이하이닉스 주식회사 | 안티퓨즈 오티피 셀어레이 및 그 동작방법 |
US10224335B2 (en) * | 2015-01-29 | 2019-03-05 | Hewlett-Packard Development Company, L.P. | Integrated circuits |
KR102389294B1 (ko) * | 2015-06-16 | 2022-04-20 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US10127993B2 (en) | 2015-07-29 | 2018-11-13 | National Chiao Tung University | Dielectric fuse memory circuit and operation method thereof |
US9735291B1 (en) * | 2016-03-10 | 2017-08-15 | Macronix International Co., Ltd. | Semiconductor device and Zener diode |
DE102016107311B3 (de) * | 2016-04-20 | 2017-08-31 | Infineon Technologies Ag | Elektronische schaltung mit halbleitervorrichtung mit transistorzelleinheiten mit verschiedenen schwellspannungen |
US10103140B2 (en) * | 2016-10-14 | 2018-10-16 | Alpha And Omega Semiconductor Incorporated | Switch circuit with controllable phase node ringing |
JP2018109838A (ja) * | 2016-12-28 | 2018-07-12 | 富士通株式会社 | 情報処理装置、情報処理システム、プログラム、及び情報処理方法 |
CN111129017B (zh) * | 2019-12-26 | 2022-06-07 | 华虹半导体(无锡)有限公司 | Otp存储器及其制造方法 |
US20230047939A1 (en) * | 2021-08-13 | 2023-02-16 | Ememory Technology Inc. | Fuse-type one time programming memory cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001352047A (ja) | 2000-06-05 | 2001-12-21 | Oki Micro Design Co Ltd | 半導体集積回路 |
DE10138648A1 (de) | 2001-08-07 | 2003-03-06 | Infineon Technologies Ag | Verfahren zum parallelen Herstellen eines MOS-Transistors und eines Bipolartransistors |
DE10257870B4 (de) | 2002-12-11 | 2007-10-04 | Infineon Technologies Ag | Halbleiterstruktur mit einer integrierten Abschirmung |
CN100343978C (zh) * | 2004-06-23 | 2007-10-17 | 上海先进半导体制造有限公司 | 制造双层多晶硅存储器元件的方法 |
DE502004011805D1 (de) * | 2004-12-08 | 2010-12-02 | Prema Semiconductor Gmbh | Verfahren zur Herstellung einer Halbleiteranordnung mit einer spannungsfesten PMOSFET-Halbleiterstruktur und einer NMOSFET-Halbleiterstruktur |
-
2006
- 2006-09-07 US US11/518,001 patent/US7602029B2/en not_active Expired - Fee Related
-
2007
- 2007-08-21 TW TW096130831A patent/TWI339440B/zh active
- 2007-09-07 CN CN2007800301168A patent/CN101501654B/zh active Active
- 2007-09-07 WO PCT/US2007/019587 patent/WO2008030583A2/en active Application Filing
-
2009
- 2009-10-09 US US12/587,609 patent/US8067288B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102081680B (zh) * | 2009-11-30 | 2012-08-01 | 上海华虹Nec电子有限公司 | Pmos otp器件的建模方法 |
CN104424377A (zh) * | 2013-08-30 | 2015-03-18 | 台湾积体电路制造股份有限公司 | 具有共享pode的标准集成电路单元的泄漏预估的系统和方法 |
CN104424377B (zh) * | 2013-08-30 | 2018-02-13 | 台湾积体电路制造股份有限公司 | 具有共享pode的标准集成电路单元的泄漏预估的系统和方法 |
CN108346659A (zh) * | 2017-01-23 | 2018-07-31 | 中芯国际集成电路制造(上海)有限公司 | 一种可编程存储单元及电子装置 |
CN108346659B (zh) * | 2017-01-23 | 2021-02-23 | 中芯国际集成电路制造(上海)有限公司 | 一种可编程存储单元及电子装置 |
CN110649102A (zh) * | 2018-06-27 | 2020-01-03 | 力旺电子股份有限公司 | 可编程可抹除的非挥发性存储器 |
CN110649102B (zh) * | 2018-06-27 | 2024-01-19 | 力旺电子股份有限公司 | 可编程可抹除的非挥发性存储器 |
CN109103189A (zh) * | 2018-07-11 | 2018-12-28 | 上海华虹宏力半导体制造有限公司 | 由n型电容耦合晶体管构成的一次可编程器件 |
CN109103189B (zh) * | 2018-07-11 | 2021-08-24 | 上海华虹宏力半导体制造有限公司 | 由n型电容耦合晶体管构成的一次可编程器件 |
Also Published As
Publication number | Publication date |
---|---|
TW200814305A (en) | 2008-03-16 |
US7602029B2 (en) | 2009-10-13 |
US20100035397A1 (en) | 2010-02-11 |
WO2008030583A3 (en) | 2008-07-17 |
US8067288B2 (en) | 2011-11-29 |
WO2008030583A2 (en) | 2008-03-13 |
TWI339440B (en) | 2011-03-21 |
US20080061347A1 (en) | 2008-03-13 |
CN101501654B (zh) | 2012-05-02 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161028 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: Bermuda Hamilton Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: New configuration and method of manufacturing the one-time programmable (otp) memory cells Effective date of registration: 20191210 Granted publication date: 20120502 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20120502 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |