CN101479402B - 原料的气化供给装置以及用于其的自动压力调节装置 - Google Patents

原料的气化供给装置以及用于其的自动压力调节装置 Download PDF

Info

Publication number
CN101479402B
CN101479402B CN2007800242422A CN200780024242A CN101479402B CN 101479402 B CN101479402 B CN 101479402B CN 2007800242422 A CN2007800242422 A CN 2007800242422A CN 200780024242 A CN200780024242 A CN 200780024242A CN 101479402 B CN101479402 B CN 101479402B
Authority
CN
China
Prior art keywords
raw material
pressure
mixed gas
temperature
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800242422A
Other languages
English (en)
Chinese (zh)
Other versions
CN101479402A (zh
Inventor
平田薰
永濑正明
日高敦志
松本笃咨
土肥亮介
西野功二
池田信一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikin Inc
Original Assignee
Fujikin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikin Inc filed Critical Fujikin Inc
Publication of CN101479402A publication Critical patent/CN101479402A/zh
Application granted granted Critical
Publication of CN101479402B publication Critical patent/CN101479402B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/024—Controlling the inlet pressure, e.g. back-pressure regulator
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7737—Thermal responsive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Flow Control (AREA)
CN2007800242422A 2006-06-27 2007-06-13 原料的气化供给装置以及用于其的自动压力调节装置 Expired - Fee Related CN101479402B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006177113A JP4605790B2 (ja) 2006-06-27 2006-06-27 原料の気化供給装置及びこれに用いる圧力自動調整装置。
JP177113/2006 2006-06-27
PCT/JP2007/000628 WO2008001483A1 (en) 2006-06-27 2007-06-13 Vaporizer/supplier of material and automatic pressure regulator for use therein

Publications (2)

Publication Number Publication Date
CN101479402A CN101479402A (zh) 2009-07-08
CN101479402B true CN101479402B (zh) 2011-05-18

Family

ID=38845258

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800242422A Expired - Fee Related CN101479402B (zh) 2006-06-27 2007-06-13 原料的气化供给装置以及用于其的自动压力调节装置

Country Status (8)

Country Link
US (1) US8047510B2 (enExample)
EP (1) EP2034047A1 (enExample)
JP (1) JP4605790B2 (enExample)
KR (1) KR101042587B1 (enExample)
CN (1) CN101479402B (enExample)
IL (1) IL195594A0 (enExample)
TW (1) TW200815703A (enExample)
WO (1) WO2008001483A1 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743763B2 (ja) * 2006-01-18 2011-08-10 株式会社フジキン 圧電素子駆動式金属ダイヤフラム型制御弁
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
JP2010109303A (ja) * 2008-10-31 2010-05-13 Horiba Ltd 材料ガス濃度制御装置
KR101578220B1 (ko) * 2008-10-31 2015-12-16 가부시키가이샤 호리바 세이샤쿠쇼 재료가스 농도 제어 시스템
US8151814B2 (en) * 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
JP5419276B2 (ja) * 2009-12-24 2014-02-19 株式会社堀場製作所 材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム
JP5506655B2 (ja) * 2010-12-28 2014-05-28 株式会社堀場エステック 材料ガス制御装置、材料ガス制御方法、材料ガス制御プログラム及び材料ガス制御システム
JP5703114B2 (ja) * 2011-04-28 2015-04-15 株式会社フジキン 原料の気化供給装置
CN103502902B (zh) 2011-05-10 2015-12-02 株式会社富士金 带有流量监测器的压力式流量控制装置、使用该装置的流体供给系统的异常检测方法及监测流量异常时的处置方法
JP5755958B2 (ja) * 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
DE102011051931A1 (de) 2011-07-19 2013-01-24 Aixtron Se Vorrichtung und Verfahren zum Bestimmen des Dampfdrucks eines in einem Trägergasstrom verdampften Ausgangsstoffes
JP5652960B2 (ja) * 2011-08-01 2015-01-14 株式会社フジキン 原料気化供給装置
JP5647083B2 (ja) * 2011-09-06 2014-12-24 株式会社フジキン 原料濃度検出機構を備えた原料気化供給装置
CN103014670A (zh) * 2011-09-26 2013-04-03 甘志银 反应源配送装置
TWI458843B (zh) * 2011-10-06 2014-11-01 Ind Tech Res Inst 蒸鍍裝置與有機薄膜的形成方法
JP5739320B2 (ja) * 2011-12-27 2015-06-24 株式会社堀場エステック 試料液体気化システム、診断システム及び診断プログラム
KR101351313B1 (ko) * 2012-04-06 2014-01-14 주식회사 지에스티에스 기화 장치
DE102012210332A1 (de) * 2012-06-19 2013-12-19 Osram Opto Semiconductors Gmbh Ald-beschichtungsanlage
JP5837869B2 (ja) * 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
WO2015021498A1 (en) * 2013-08-13 2015-02-19 Breville Pty Limited Carbonator
US9625048B2 (en) 2013-09-04 2017-04-18 Horiba Stec, Co., Ltd. Interlace lifting mechanism
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
JP6372998B2 (ja) * 2013-12-05 2018-08-15 株式会社フジキン 圧力式流量制御装置
DE102013114720A1 (de) * 2013-12-20 2015-06-25 Bayer Technology Services Gmbh Verfahren zum Betreiben einer modular aufgebauten Produktionsanlage
CN103757610B (zh) * 2014-01-29 2015-10-28 北京七星华创电子股份有限公司 一种基于物料供应系统模型的工艺环境压力调度方法
CN104928650B (zh) * 2014-03-17 2017-09-26 江苏南大光电材料股份有限公司 液体金属有机化合物供给系统
US9605346B2 (en) * 2014-03-28 2017-03-28 Lam Research Corporation Systems and methods for pressure-based liquid flow control
JP2015190035A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法
CN104482401B (zh) * 2014-12-09 2018-08-17 淄博绿成燃气设备有限公司 一种双燃气减压释放装置
EP3162914A1 (en) * 2015-11-02 2017-05-03 IMEC vzw Apparatus and method for delivering a gaseous precursor to a reaction chamber
US11453943B2 (en) * 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11946466B2 (en) * 2016-10-27 2024-04-02 Baxter International Inc. Medical fluid therapy machine including pneumatic pump box and accumulators therefore
US10697848B1 (en) * 2016-12-12 2020-06-30 Kirk A. Dobbs Smart building water supply management system with leak detection and flood prevention
US10983537B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
WO2018192668A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Material deposition arrangement, a method for depositing material and a material deposition chamber
US11066746B1 (en) * 2017-05-11 2021-07-20 Horiba Stec, Co., Ltd. Liquid material vaporization and supply device, and control program
CN107469655B (zh) * 2017-08-23 2021-06-25 江苏新美星包装机械股份有限公司 一种液体混合方法
JP7137921B2 (ja) * 2017-11-07 2022-09-15 株式会社堀場エステック 気化システム及び気化システム用プログラム
DE102017130551A1 (de) * 2017-12-19 2019-06-19 Aixtron Se Vorrichtung und Verfahren zur Gewinnnung von Informationen über in einem CVD-Verfahren abgeschiedener Schichten
CN108628352B (zh) * 2018-04-19 2021-07-06 兰州空间技术物理研究所 一种固态工质气化流量自动控制装置
JP7210253B2 (ja) 2018-12-06 2023-01-23 株式会社堀場エステック 流体制御弁
JP7281285B2 (ja) * 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム
KR20220018591A (ko) * 2019-06-07 2022-02-15 램 리써치 코포레이션 멀티 스테이션 반도체 프로세싱에서 독립적으로 조정 가능한 플로우 경로 컨덕턴스
JP2021001361A (ja) * 2019-06-19 2021-01-07 東京エレクトロン株式会社 処理方法及び基板処理システム
CN112144038B (zh) * 2019-06-27 2023-06-27 张家港恩达通讯科技有限公司 一种用于MOCVD设备GaAs基外延掺杂源供给系统
US11718912B2 (en) * 2019-07-30 2023-08-08 Applied Materials, Inc. Methods and apparatus for calibrating concentration sensors for precursor delivery
SG10202101459XA (en) * 2020-02-25 2021-09-29 Kc Co Ltd Gas mixing supply device, mixing system, and gas mixing supply method
JP7572168B2 (ja) * 2020-05-29 2024-10-23 大陽日酸株式会社 混合ガス供給装置、金属窒化膜の製造装置、及び金属窒化膜の製造方法
JP7543030B2 (ja) * 2020-08-26 2024-09-02 株式会社堀場エステック 原料気化システム、及び、これに用いられる濃度制御モジュール
CN112538615A (zh) * 2020-11-16 2021-03-23 武汉新芯集成电路制造有限公司 一种液态源存储系统
CN112283590A (zh) * 2020-11-17 2021-01-29 江苏雅克福瑞半导体科技有限公司 一种用于制造半导体的化学品供应系统及其工作方法
JP2022118634A (ja) 2021-02-02 2022-08-15 東京エレクトロン株式会社 粉体搬送装置、ガス供給装置及び粉体除去方法
JP7527237B2 (ja) * 2021-04-01 2024-08-02 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、および基板処理装置
JP2024539919A (ja) * 2021-10-27 2024-10-31 インテグリス・インコーポレーテッド 高蒸気圧送出システム
CN114047300A (zh) * 2021-11-26 2022-02-15 南大光电半导体材料有限公司 前驱体材料气化特性的测定装置及其测试方法
CN115182041A (zh) * 2022-06-14 2022-10-14 东莞市天域半导体科技有限公司 管路供应系统
CN115449779B (zh) * 2022-09-14 2023-06-09 拓荆科技股份有限公司 连续性沉积薄膜时片间均一性的改善方法及其应用
CN117089818A (zh) * 2023-07-11 2023-11-21 中国科学院半导体研究所 金属有机物mo源输运系统和方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1458669A (zh) * 2002-05-13 2003-11-26 日本派欧尼株式会社 气化器和气化供给装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4436674A (en) * 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
JPS60102251A (ja) 1983-11-07 1985-06-06 Toyota Motor Corp 砂中子の鋳型内での支持方法
JPS60102251U (ja) * 1983-12-14 1985-07-12 日本電気株式会社 気相成長装置
JP2538042B2 (ja) * 1989-03-29 1996-09-25 株式会社エステック 有機金属化合物の気化供給方法とその装置
JP2600383B2 (ja) 1989-07-20 1997-04-16 トヨタ自動車株式会社 内燃機関の空燃比制御装置
JP2611009B2 (ja) * 1989-09-12 1997-05-21 株式会社エステック 有機金属化合物の気化供給装置
DE69006809T2 (de) 1989-09-12 1994-09-15 Shinetsu Chemical Co Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen.
JP2611008B2 (ja) * 1989-09-12 1997-05-21 株式会社エステック 有機金属化合物の気化供給装置
US5288325A (en) * 1991-03-29 1994-02-22 Nec Corporation Chemical vapor deposition apparatus
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
JP2000252269A (ja) * 1992-09-21 2000-09-14 Mitsubishi Electric Corp 液体気化装置及び液体気化方法
DE69312436T2 (de) * 1992-12-15 1998-02-05 Applied Materials Inc Verdampfung von flüssigen Reaktionspartnern für CVD
US5851004A (en) * 1996-10-16 1998-12-22 Parker-Hannifin Corporation High pressure actuated metal seated diaphragm valve
US5730423A (en) 1996-10-16 1998-03-24 Parker-Hannifin Corporation All metal diaphragm valve
JP3973605B2 (ja) * 2002-07-10 2007-09-12 東京エレクトロン株式会社 成膜装置及びこれに使用する原料供給装置、成膜方法
JP4331539B2 (ja) * 2003-07-31 2009-09-16 株式会社フジキン チャンバへのガス供給装置及びこれを用いたチャンバの内圧制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1458669A (zh) * 2002-05-13 2003-11-26 日本派欧尼株式会社 气化器和气化供给装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP平2-255595A 1990.10.16
JP平3-97692A 1991.04.23
JP平3-97693A 1991.04.23

Also Published As

Publication number Publication date
TWI355470B (enExample) 2012-01-01
JP4605790B2 (ja) 2011-01-05
US8047510B2 (en) 2011-11-01
TW200815703A (en) 2008-04-01
KR20080111124A (ko) 2008-12-22
IL195594A0 (en) 2009-09-01
CN101479402A (zh) 2009-07-08
EP2034047A1 (en) 2009-03-11
US20100012026A1 (en) 2010-01-21
JP2008010510A (ja) 2008-01-17
WO2008001483A1 (en) 2008-01-03
KR101042587B1 (ko) 2011-06-20

Similar Documents

Publication Publication Date Title
CN101479402B (zh) 原料的气化供给装置以及用于其的自动压力调节装置
CN103493181B (zh) 原料的汽化供给装置
CN103718275B (zh) 原料气化供给装置
KR101052156B1 (ko) 가스 공급 방법 및 가스 공급 장치
CN108699688B (zh) 前体供应系统和前体供应方法
TWI525734B (zh) And a raw material gas supply device for a semiconductor manufacturing apparatus
US8151814B2 (en) Method for controlling flow and concentration of liquid precursor
JP5461786B2 (ja) 気化器を備えたガス供給装置
US10113235B2 (en) Source gas supply unit, film forming apparatus and source gas supply method
JP2012234860A5 (enExample)
EP1585002A1 (en) Flow control method for clustering fluid and flow control device for clustering fluid
KR102765481B1 (ko) 가스 공급량 측정 방법 및 가스 공급량 제어 방법
JP3280507B2 (ja) 液体材料気化供給装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110518

CF01 Termination of patent right due to non-payment of annual fee