CN101441331A - 包括半导体薄膜的半导体器件、该薄膜的结晶方法及装置 - Google Patents
包括半导体薄膜的半导体器件、该薄膜的结晶方法及装置 Download PDFInfo
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- CN101441331A CN101441331A CNA200810188142XA CN200810188142A CN101441331A CN 101441331 A CN101441331 A CN 101441331A CN A200810188142X A CNA200810188142X A CN A200810188142XA CN 200810188142 A CN200810188142 A CN 200810188142A CN 101441331 A CN101441331 A CN 101441331A
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Abstract
Description
Claims (2)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004232750A JP2006054223A (ja) | 2004-08-09 | 2004-08-09 | 半導体薄膜の結晶化方法、結晶化された半導体薄膜を有する基板、そして半導体薄膜の結晶化装置 |
JP232750/2004 | 2004-08-09 | ||
JP2004232745A JP4763983B2 (ja) | 2004-08-09 | 2004-08-09 | 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法、表示装置及び位相シフタ |
JP232745/2004 | 2004-08-09 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200510091162 Division CN1734714B (zh) | 2004-08-09 | 2005-08-09 | 包括半导体薄膜的半导体器件、该薄膜的结晶方法及装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101441331A true CN101441331A (zh) | 2009-05-27 |
CN101441331B CN101441331B (zh) | 2010-12-29 |
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Application Number | Title | Priority Date | Filing Date |
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CN 200510091162 Expired - Fee Related CN1734714B (zh) | 2004-08-09 | 2005-08-09 | 包括半导体薄膜的半导体器件、该薄膜的结晶方法及装置 |
CN200810188142XA Expired - Fee Related CN101441331B (zh) | 2004-08-09 | 2005-08-09 | 包括半导体薄膜的半导体器件、该薄膜的结晶方法及装置 |
CN2008101881434A Expired - Fee Related CN101442000B (zh) | 2004-08-09 | 2005-08-09 | 用于使半导体膜结晶的结晶方法 |
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CN 200510091162 Expired - Fee Related CN1734714B (zh) | 2004-08-09 | 2005-08-09 | 包括半导体薄膜的半导体器件、该薄膜的结晶方法及装置 |
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Application Number | Title | Priority Date | Filing Date |
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CN2008101881434A Expired - Fee Related CN101442000B (zh) | 2004-08-09 | 2005-08-09 | 用于使半导体膜结晶的结晶方法 |
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JP (1) | JP4763983B2 (zh) |
CN (3) | CN1734714B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102721873A (zh) * | 2012-06-07 | 2012-10-10 | 京东方科技集团股份有限公司 | 多晶硅阵列基板上多晶硅薄膜电阻的测试方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569463B2 (en) | 2006-03-08 | 2009-08-04 | Applied Materials, Inc. | Method of thermal processing structures formed on a substrate |
CN102248309B (zh) * | 2010-05-17 | 2014-04-02 | 苏州天弘激光股份有限公司 | Ccd装置辅助定位的晶圆激光划片方法 |
JP6234074B2 (ja) | 2013-06-07 | 2017-11-22 | オリンパス株式会社 | 半導体装置、固体撮像装置、および撮像装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000277450A (ja) * | 1999-03-24 | 2000-10-06 | Matsushita Electric Ind Co Ltd | レーザアニール装置及びこの装置を用いた薄膜トランジスタの製造方法 |
JP4403599B2 (ja) * | 1999-04-19 | 2010-01-27 | ソニー株式会社 | 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP3448685B2 (ja) * | 2000-07-24 | 2003-09-22 | 松下電器産業株式会社 | 半導体装置、液晶表示装置およびel表示装置 |
JP3344418B2 (ja) * | 2000-11-10 | 2002-11-11 | 松下電器産業株式会社 | 露光装置、半導体薄膜、薄膜トランジスタ、液晶表示装置、el表示装置およびその製造方法 |
JP3903761B2 (ja) * | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
JP2004055771A (ja) * | 2002-07-18 | 2004-02-19 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法及びレーザ照射装置 |
JP4307041B2 (ja) * | 2002-09-20 | 2009-08-05 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法 |
JP2005235811A (ja) * | 2004-02-17 | 2005-09-02 | Nikon Corp | 半導体薄膜形成装置 |
-
2004
- 2004-08-09 JP JP2004232745A patent/JP4763983B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-09 CN CN 200510091162 patent/CN1734714B/zh not_active Expired - Fee Related
- 2005-08-09 CN CN200810188142XA patent/CN101441331B/zh not_active Expired - Fee Related
- 2005-08-09 CN CN2008101881434A patent/CN101442000B/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102721873A (zh) * | 2012-06-07 | 2012-10-10 | 京东方科技集团股份有限公司 | 多晶硅阵列基板上多晶硅薄膜电阻的测试方法 |
WO2013181900A1 (zh) * | 2012-06-07 | 2013-12-12 | 京东方科技集团股份有限公司 | 多晶硅阵列基板上多晶硅薄膜电阻的测试方法 |
CN102721873B (zh) * | 2012-06-07 | 2014-09-03 | 京东方科技集团股份有限公司 | 多晶硅阵列基板上多晶硅薄膜电阻的测试方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4763983B2 (ja) | 2011-08-31 |
CN101442000A (zh) | 2009-05-27 |
CN101442000B (zh) | 2011-01-19 |
CN1734714A (zh) | 2006-02-15 |
JP2006054222A (ja) | 2006-02-23 |
CN1734714B (zh) | 2010-07-21 |
CN101441331B (zh) | 2010-12-29 |
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