CN101421889B - 具有用于衍射导波的光子晶体镜的vcsel - Google Patents

具有用于衍射导波的光子晶体镜的vcsel Download PDF

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Publication number
CN101421889B
CN101421889B CN2007800130535A CN200780013053A CN101421889B CN 101421889 B CN101421889 B CN 101421889B CN 2007800130535 A CN2007800130535 A CN 2007800130535A CN 200780013053 A CN200780013053 A CN 200780013053A CN 101421889 B CN101421889 B CN 101421889B
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CN
China
Prior art keywords
layer
light
refractive index
mirror
multilayer mirror
Prior art date
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Expired - Fee Related
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CN2007800130535A
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English (en)
Chinese (zh)
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CN101421889A (zh
Inventor
井久田光弘
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Canon Inc
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Canon Inc
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Publication date
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Publication of CN101421889A publication Critical patent/CN101421889A/zh
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Publication of CN101421889B publication Critical patent/CN101421889B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CN2007800130535A 2006-04-12 2007-04-05 具有用于衍射导波的光子晶体镜的vcsel Expired - Fee Related CN101421889B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP109913/2006 2006-04-12
JP2006109913A JP4533339B2 (ja) 2006-04-12 2006-04-12 面発光レーザ
PCT/JP2007/058018 WO2007119761A2 (en) 2006-04-12 2007-04-05 Vcsel with photonic crystal mirror for waveguiding by diffraction

Publications (2)

Publication Number Publication Date
CN101421889A CN101421889A (zh) 2009-04-29
CN101421889B true CN101421889B (zh) 2011-01-19

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Family Applications (1)

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CN2007800130535A Expired - Fee Related CN101421889B (zh) 2006-04-12 2007-04-05 具有用于衍射导波的光子晶体镜的vcsel

Country Status (7)

Country Link
US (2) US7796665B2 (enExample)
EP (1) EP2011206B1 (enExample)
JP (1) JP4533339B2 (enExample)
KR (1) KR100991068B1 (enExample)
CN (1) CN101421889B (enExample)
AT (1) ATE513344T1 (enExample)
WO (1) WO2007119761A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4709259B2 (ja) * 2007-10-12 2011-06-22 キヤノン株式会社 面発光レーザ
JP5171318B2 (ja) * 2008-03-05 2013-03-27 キヤノン株式会社 面発光レーザアレイ
JP4968959B2 (ja) * 2008-03-06 2012-07-04 キヤノン株式会社 フォトニック結晶および該フォトニック結晶を用いた面発光レーザ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP4639249B2 (ja) 2008-07-31 2011-02-23 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器
JP5106487B2 (ja) * 2008-07-31 2012-12-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器
JP5038371B2 (ja) * 2008-09-26 2012-10-03 キヤノン株式会社 面発光レーザの製造方法
JP5183555B2 (ja) * 2009-04-02 2013-04-17 キヤノン株式会社 面発光レーザアレイ
JP5312159B2 (ja) * 2009-04-08 2013-10-09 キヤノン株式会社 ３次元フォトニック結晶の製造方法および光機能素子、発光素子
CN101655885B (zh) * 2009-08-27 2012-01-11 南京理工大学 一种高效率二维光子晶体偏轴定向发射器的设计方法
US9042421B2 (en) 2010-10-18 2015-05-26 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array
KR101799521B1 (ko) 2011-05-24 2017-11-20 삼성전자 주식회사 광결정형 광변조기 및 이를 구비하는 3차원 영상 획득 장치
KR101928436B1 (ko) 2012-10-10 2019-02-26 삼성전자주식회사 광 집적 회로용 하이브리드 수직 공명 레이저
EP2961185B1 (en) * 2013-02-20 2020-03-04 Panasonic Intellectual Property Corporation of America Control method for information apparatus and program
CN117882204A (zh) * 2021-08-31 2024-04-12 西铁城电子株式会社 Led发光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1643752A (zh) * 2002-02-12 2005-07-20 尼克莱·N·登特索韦 倾斜空腔半导体激光器及其制造方法

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US5231642A (en) 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
US6603605B1 (en) * 1999-11-05 2003-08-05 Interuniversitair Microelektronica Centrum (Imec, Vzw) System for guiding a beam of electromagnetic radiation
JP2003273456A (ja) * 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
US6704343B2 (en) * 2002-07-18 2004-03-09 Finisar Corporation High power single mode vertical cavity surface emitting laser
TW200524236A (en) 2003-12-01 2005-07-16 Nl Nanosemiconductor Gmbh Optoelectronic device incorporating an interference filter
KR101128944B1 (ko) * 2004-03-05 2012-03-27 로무 가부시키가이샤 2차원 포토닉 결정 면발광 레이저광원
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
US7689086B2 (en) 2004-07-30 2010-03-30 University Of Connecticut Resonant leaky-mode optical devices and associated methods
US7697588B2 (en) 2006-11-02 2010-04-13 Canon Kabushiki Kaisha Structure having photonic crystal and surface-emitting laser using the same
US7499481B2 (en) 2006-11-14 2009-03-03 Canon Kabushiki Kaisha Surface-emitting laser and method for producing the same
US7535946B2 (en) * 2006-11-16 2009-05-19 Canon Kabushiki Kaisha Structure using photonic crystal and surface emitting laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1643752A (zh) * 2002-02-12 2005-07-20 尼克莱·N·登特索韦 倾斜空腔半导体激光器及其制造方法

Also Published As

Publication number Publication date
KR20090015920A (ko) 2009-02-12
JP4533339B2 (ja) 2010-09-01
US7796665B2 (en) 2010-09-14
EP2011206B1 (en) 2011-06-15
CN101421889A (zh) 2009-04-29
KR100991068B1 (ko) 2010-10-29
EP2011206A2 (en) 2009-01-07
US20100303117A1 (en) 2010-12-02
WO2007119761B1 (en) 2008-05-22
US20100014548A1 (en) 2010-01-21
ATE513344T1 (de) 2011-07-15
US8249123B2 (en) 2012-08-21
WO2007119761A3 (en) 2008-04-03
WO2007119761A2 (en) 2007-10-25
JP2007287733A (ja) 2007-11-01

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Granted publication date: 20110119

Termination date: 20170405