JP4533339B2 - 面発光レーザ - Google Patents

面発光レーザ Download PDF

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Publication number
JP4533339B2
JP4533339B2 JP2006109913A JP2006109913A JP4533339B2 JP 4533339 B2 JP4533339 B2 JP 4533339B2 JP 2006109913 A JP2006109913 A JP 2006109913A JP 2006109913 A JP2006109913 A JP 2006109913A JP 4533339 B2 JP4533339 B2 JP 4533339B2
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JP
Japan
Prior art keywords
light
layer
photonic crystal
multilayer mirror
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006109913A
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English (en)
Japanese (ja)
Other versions
JP2007287733A5 (enExample
JP2007287733A (ja
Inventor
光弘 井久田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006109913A priority Critical patent/JP4533339B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to AT07741454T priority patent/ATE513344T1/de
Priority to US11/916,230 priority patent/US7796665B2/en
Priority to EP07741454A priority patent/EP2011206B1/en
Priority to CN2007800130535A priority patent/CN101421889B/zh
Priority to KR1020087027310A priority patent/KR100991068B1/ko
Priority to PCT/JP2007/058018 priority patent/WO2007119761A2/en
Publication of JP2007287733A publication Critical patent/JP2007287733A/ja
Publication of JP2007287733A5 publication Critical patent/JP2007287733A5/ja
Priority to US12/853,393 priority patent/US8249123B2/en
Application granted granted Critical
Publication of JP4533339B2 publication Critical patent/JP4533339B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
JP2006109913A 2006-04-12 2006-04-12 面発光レーザ Expired - Fee Related JP4533339B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006109913A JP4533339B2 (ja) 2006-04-12 2006-04-12 面発光レーザ
US11/916,230 US7796665B2 (en) 2006-04-12 2007-04-05 Surface emitting laser
EP07741454A EP2011206B1 (en) 2006-04-12 2007-04-05 Vcsel with photonic crystal mirror for waveguiding by diffraction
CN2007800130535A CN101421889B (zh) 2006-04-12 2007-04-05 具有用于衍射导波的光子晶体镜的vcsel
AT07741454T ATE513344T1 (de) 2006-04-12 2007-04-05 Vcsel mit spiegel aus einem photonischen kristall für wellenleitung mittels beugung
KR1020087027310A KR100991068B1 (ko) 2006-04-12 2007-04-05 회절에 의한 도파용 포토닉 결정미러를 가진 면발광 레이저
PCT/JP2007/058018 WO2007119761A2 (en) 2006-04-12 2007-04-05 Vcsel with photonic crystal mirror for waveguiding by diffraction
US12/853,393 US8249123B2 (en) 2006-04-12 2010-08-10 Surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006109913A JP4533339B2 (ja) 2006-04-12 2006-04-12 面発光レーザ

Publications (3)

Publication Number Publication Date
JP2007287733A JP2007287733A (ja) 2007-11-01
JP2007287733A5 JP2007287733A5 (enExample) 2010-04-08
JP4533339B2 true JP4533339B2 (ja) 2010-09-01

Family

ID=38609910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006109913A Expired - Fee Related JP4533339B2 (ja) 2006-04-12 2006-04-12 面発光レーザ

Country Status (7)

Country Link
US (2) US7796665B2 (enExample)
EP (1) EP2011206B1 (enExample)
JP (1) JP4533339B2 (enExample)
KR (1) KR100991068B1 (enExample)
CN (1) CN101421889B (enExample)
AT (1) ATE513344T1 (enExample)
WO (1) WO2007119761A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4709259B2 (ja) * 2007-10-12 2011-06-22 キヤノン株式会社 面発光レーザ
JP5171318B2 (ja) * 2008-03-05 2013-03-27 キヤノン株式会社 面発光レーザアレイ
JP4968959B2 (ja) * 2008-03-06 2012-07-04 キヤノン株式会社 フォトニック結晶および該フォトニック結晶を用いた面発光レーザ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP4639249B2 (ja) 2008-07-31 2011-02-23 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器
JP5106487B2 (ja) * 2008-07-31 2012-12-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器
JP5038371B2 (ja) * 2008-09-26 2012-10-03 キヤノン株式会社 面発光レーザの製造方法
JP5183555B2 (ja) * 2009-04-02 2013-04-17 キヤノン株式会社 面発光レーザアレイ
JP5312159B2 (ja) * 2009-04-08 2013-10-09 キヤノン株式会社 ３次元フォトニック結晶の製造方法および光機能素子、発光素子
CN101655885B (zh) * 2009-08-27 2012-01-11 南京理工大学 一种高效率二维光子晶体偏轴定向发射器的设计方法
US9042421B2 (en) 2010-10-18 2015-05-26 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array
KR101799521B1 (ko) 2011-05-24 2017-11-20 삼성전자 주식회사 광결정형 광변조기 및 이를 구비하는 3차원 영상 획득 장치
KR101928436B1 (ko) 2012-10-10 2019-02-26 삼성전자주식회사 광 집적 회로용 하이브리드 수직 공명 레이저
EP2961185B1 (en) * 2013-02-20 2020-03-04 Panasonic Intellectual Property Corporation of America Control method for information apparatus and program
DE112022004250T5 (de) * 2021-08-31 2024-06-27 Citizen Electronics Co., Ltd. Licht emittierende led-vorrichtung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231642A (en) 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
US6603605B1 (en) * 1999-11-05 2003-08-05 Interuniversitair Microelektronica Centrum (Imec, Vzw) System for guiding a beam of electromagnetic radiation
US7031360B2 (en) 2002-02-12 2006-04-18 Nl Nanosemiconductor Gmbh Tilted cavity semiconductor laser (TCSL) and method of making same
JP2003273456A (ja) * 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
US6704343B2 (en) * 2002-07-18 2004-03-09 Finisar Corporation High power single mode vertical cavity surface emitting laser
TW200524236A (en) 2003-12-01 2005-07-16 Nl Nanosemiconductor Gmbh Optoelectronic device incorporating an interference filter
CN100456583C (zh) * 2004-03-05 2009-01-28 国立大学法人京都大学 二维光子晶体面发光激光光源
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
US7689086B2 (en) 2004-07-30 2010-03-30 University Of Connecticut Resonant leaky-mode optical devices and associated methods
US7697588B2 (en) 2006-11-02 2010-04-13 Canon Kabushiki Kaisha Structure having photonic crystal and surface-emitting laser using the same
US7499481B2 (en) 2006-11-14 2009-03-03 Canon Kabushiki Kaisha Surface-emitting laser and method for producing the same
US7535946B2 (en) * 2006-11-16 2009-05-19 Canon Kabushiki Kaisha Structure using photonic crystal and surface emitting laser

Also Published As

Publication number Publication date
WO2007119761A3 (en) 2008-04-03
CN101421889B (zh) 2011-01-19
KR100991068B1 (ko) 2010-10-29
KR20090015920A (ko) 2009-02-12
CN101421889A (zh) 2009-04-29
US7796665B2 (en) 2010-09-14
EP2011206B1 (en) 2011-06-15
US8249123B2 (en) 2012-08-21
WO2007119761A2 (en) 2007-10-25
EP2011206A2 (en) 2009-01-07
US20100014548A1 (en) 2010-01-21
US20100303117A1 (en) 2010-12-02
ATE513344T1 (de) 2011-07-15
JP2007287733A (ja) 2007-11-01
WO2007119761B1 (en) 2008-05-22

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