CN101404267A - 半导体装置与半导体装置的制造方法 - Google Patents

半导体装置与半导体装置的制造方法 Download PDF

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Publication number
CN101404267A
CN101404267A CN 200810211001 CN200810211001A CN101404267A CN 101404267 A CN101404267 A CN 101404267A CN 200810211001 CN200810211001 CN 200810211001 CN 200810211001 A CN200810211001 A CN 200810211001A CN 101404267 A CN101404267 A CN 101404267A
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CN
China
Prior art keywords
semiconductor chip
metal layer
carrier tape
semiconductor device
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 200810211001
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English (en)
Chinese (zh)
Inventor
中村嘉文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101404267A publication Critical patent/CN101404267A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
CN 200810211001 2007-10-03 2008-08-13 半导体装置与半导体装置的制造方法 Pending CN101404267A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007259296 2007-10-03
JP2007259296 2007-10-03
JP2008097648 2008-04-04

Publications (1)

Publication Number Publication Date
CN101404267A true CN101404267A (zh) 2009-04-08

Family

ID=40538210

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200810211001 Pending CN101404267A (zh) 2007-10-03 2008-08-13 半导体装置与半导体装置的制造方法

Country Status (2)

Country Link
JP (1) JP2009105366A (enrdf_load_stackoverflow)
CN (1) CN101404267A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924082A (zh) * 2009-06-16 2010-12-22 东部高科股份有限公司 热释放半导体封装
CN101986429A (zh) * 2009-07-28 2011-03-16 精材科技股份有限公司 芯片封装体及其形成方法
CN103594434A (zh) * 2013-10-23 2014-02-19 孔星 功率部件复合散热层及其工艺和带复合散热层的功率部件
CN103635996A (zh) * 2011-06-30 2014-03-12 英特尔公司 无焊内建层封装的翘曲减小
US9613920B2 (en) 2012-05-14 2017-04-04 Intel Corporation Microelectronic package utilizing multiple bumpless build-up structures and through-silicon vias
US9646851B2 (en) 2010-04-02 2017-05-09 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
TWI697079B (zh) * 2019-03-06 2020-06-21 南茂科技股份有限公司 薄膜覆晶封裝結構
CN112420632A (zh) * 2019-08-23 2021-02-26 三星电子株式会社 半导体封装件
CN114424335A (zh) * 2019-09-27 2022-04-29 株式会社电装 电子装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5799541B2 (ja) 2011-03-25 2015-10-28 株式会社ソシオネクスト 半導体装置及びその製造方法
KR101630769B1 (ko) 2014-06-24 2016-06-16 매그나칩 반도체 유한회사 방열 반도체 칩 패키지 및 그 제조 방법
CN113327899A (zh) * 2021-04-22 2021-08-31 成都芯源系统有限公司 倒装芯片封装单元及封装方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924082A (zh) * 2009-06-16 2010-12-22 东部高科股份有限公司 热释放半导体封装
CN101986429A (zh) * 2009-07-28 2011-03-16 精材科技股份有限公司 芯片封装体及其形成方法
US9646851B2 (en) 2010-04-02 2017-05-09 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
US11257688B2 (en) 2010-04-02 2022-02-22 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
US10651051B2 (en) 2010-04-02 2020-05-12 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
US9847234B2 (en) 2010-04-02 2017-12-19 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
CN103635996B (zh) * 2011-06-30 2016-08-17 英特尔公司 无焊内建层封装的翘曲减小
US9627227B2 (en) 2011-06-30 2017-04-18 Intel Corporation Bumpless build-up layer package warpage reduction
CN103635996A (zh) * 2011-06-30 2014-03-12 英特尔公司 无焊内建层封装的翘曲减小
US9613920B2 (en) 2012-05-14 2017-04-04 Intel Corporation Microelectronic package utilizing multiple bumpless build-up structures and through-silicon vias
CN103594434A (zh) * 2013-10-23 2014-02-19 孔星 功率部件复合散热层及其工艺和带复合散热层的功率部件
TWI697079B (zh) * 2019-03-06 2020-06-21 南茂科技股份有限公司 薄膜覆晶封裝結構
CN111668172A (zh) * 2019-03-06 2020-09-15 南茂科技股份有限公司 薄膜覆晶封装结构
CN111668172B (zh) * 2019-03-06 2022-05-03 南茂科技股份有限公司 薄膜覆晶封装结构
CN112420632A (zh) * 2019-08-23 2021-02-26 三星电子株式会社 半导体封装件
CN114424335A (zh) * 2019-09-27 2022-04-29 株式会社电装 电子装置

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Open date: 20090408