CN101379620B - 制造太阳能电池接触层的方法 - Google Patents
制造太阳能电池接触层的方法 Download PDFInfo
- Publication number
- CN101379620B CN101379620B CN2005800385361A CN200580038536A CN101379620B CN 101379620 B CN101379620 B CN 101379620B CN 2005800385361 A CN2005800385361 A CN 2005800385361A CN 200580038536 A CN200580038536 A CN 200580038536A CN 101379620 B CN101379620 B CN 101379620B
- Authority
- CN
- China
- Prior art keywords
- mole
- solar cell
- weight
- silver
- cell contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000011521 glass Substances 0.000 claims abstract description 107
- 239000000203 mixture Substances 0.000 claims abstract description 67
- 239000004332 silver Substances 0.000 claims abstract description 58
- 229910052709 silver Inorganic materials 0.000 claims abstract description 58
- 239000007787 solid Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 239000004615 ingredient Substances 0.000 claims description 45
- 239000002002 slurry Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 238000010304 firing Methods 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- 239000000654 additive Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 230000000996 additive effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009472 formulation Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 13
- 239000002904 solvent Substances 0.000 description 11
- 238000005245 sintering Methods 0.000 description 10
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 239000013008 thixotropic agent Substances 0.000 description 4
- -1 alcohol ester Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000080 wetting agent Substances 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- WUOACPNHFRMFPN-VIFPVBQESA-N (R)-(+)-alpha-terpineol Chemical compound CC1=CC[C@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-VIFPVBQESA-N 0.000 description 1
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ACOGMWBDRJJKNB-UHFFFAOYSA-N acetic acid;ethene Chemical compound C=C.CC(O)=O ACOGMWBDRJJKNB-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N beta-terpineol Chemical compound CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- FUGIIBWTNARRSF-UHFFFAOYSA-N decane-5,6-diol Chemical compound CCCCC(O)C(O)CCCC FUGIIBWTNARRSF-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000011440 grout Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000012669 liquid formulation Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical group 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Description
玻璃组合物 | I(宽的) | II(优选的) | III(更优选的) |
成分 | |||
PbO | 15-75 | 25-66 | 30-64 |
SiO2 | 5-50 | 15-40 | 20-35 |
ZnO | 0-50 | 5-35 | 20-33 |
PbO+ZnO | 15-80 | --- | --- |
玻璃组合物 | I(宽的) | II(优选的) | III(更优选的) |
成分 | |||
Al2O3 | 0-15 | 1-11 | 2-10 |
Ta2O5 | 0.1-10 | 0.1-3 | 0.2-2 |
Sb2O5 | 0.1-10 | 0.1-3 | 0.2-2 |
ZrO2 | 0.1-10 | 0.5-5 | 1-2 |
P2O5 | 0.1-8 | 1-5 | 2-4 |
MoO3 | 0.1-3 | --- | --- |
HfO2+In2O3+Ga2O3 | 0.1-15 | 1-10 | 3-8 |
Y2O3+Yb2O3 | 0.1-10 | 1-8 | 3-8 |
玻璃组合物 | IV | V | VI | VII | VIII | IX | X | XI |
成分 | ||||||||
PbO | 58-64 | 25-40 | 58-64 | 26-34 | 58-66 | 58-66 | 58-70 | 58-66 |
SiO2 | 25-31 | 20-31 | 22-32 | 27-33 | 20-31 | 20-31 | 20-31 | 20-32 |
ZnO | 0-10 | 5-34 | 27-33 | |||||
Al2O3 | 2-11 | 4-10 | 1-10 | 5-11 | 1-9 | 1-9 | 1-11 | 1-9 |
Ta2O5 | 0-2 | 0.1-2 | 0.1-2 | |||||
P2O5 | 0.1-4 | |||||||
HfO2+In2O3+Ga2O3 | 0.1-8 | |||||||
ZrO2 | 0.1-5 | 0.1-2 | 0.1-4 | |||||
B2O3 | 0-3 | |||||||
Sb2O5 | 0.1-3 |
玻璃→ | A | B | C | D | E |
摩尔% | |||||
PbO | 31.3 | 61.6 | 61.5 | 58.9 | 61.9 |
ZnO | 30.0 | ||||
SiO2 | 29.8 | 30.3 | 27.2 | 28.7 | 30.1 |
Al2O3 | 8.0 | 3.3 | 5.6 | 7.7 | |
B2O3 | 2.4 | ||||
Ta2O5 | 0.9 | ||||
ZrO2 | 1.6 | 2.0 | |||
P2O5 | 3.3 | ||||
Sb2O5 | 1.4 | ||||
Ga2O3 | 8.0 | ||||
HfO2 | 4.8 |
玻璃组合物 | A | B | C | D | E |
玻璃性能 | |||||
Tg,℃ | 498 | 404 | 390 | --- | 404 |
TCE,(25-300℃)×10-7/℃ | 68 | 105 | 98 | 105 | 97 |
密度,gm/cc | 5.8 | 6.7 | 6.5 | 6.8 | 6.3 |
浆料→ | 1 | 2 | 3 | 4 | 5 | 6 |
组分(重量%) | ||||||
玻璃组分 | A | B | C | D | E | B |
浆料中的玻璃组分 | 4.5 | 4.5 | 4.5 | 4.5 | 4.5 | 4.5 |
银薄片,SF-23 | 73.0 | |||||
银粉,Ag3000-1 | 68 | 68 | 68 | 68 | 68 | |
胶态银,RDAGCOLB | 12.4 | 12.4 | 12.4 | 12.4 | 12.4 | 5.0 |
媒介物V131 | 0.6 | 6.5 | 0.6 | 0.6 | 0.6 | 17.5 |
媒介物V132 | 14.5 | 8.6 | 14.5 | 14.5 | 14.5 |
浆料→ | 1 | 2 | 3 | 4 | 5 | 6 |
玻璃→ | A | B | C | D | E | B |
Isc,A | 4.73 | 4.93 | 4.73 | 4.83 | 4.72 | 4.89 |
Voc,mV | 597 | 605 | 601 | 602 | 598 | 600 |
效率,% | 13.9 | 14.7 | 14.1 | 14.3 | 11.0 | 14.1 |
填充因子,% | 76.5 | 77.2 | 76.1 | 76.6 | 61.1 | 75.2 |
Rs,mΩ | 8.5 | 8.1 | 8.8 | 8.8 | 21.7 | 8.8 |
Rsh,Ω | 31.7 | 29 | 20 | 38 | 22.3 | 8.0 |
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210335668.2A CN102891215B (zh) | 2004-11-12 | 2005-10-14 | 制造太阳能电池接触层的方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/988,208 | 2004-11-12 | ||
US10/988,208 US20060102228A1 (en) | 2004-11-12 | 2004-11-12 | Method of making solar cell contacts |
PCT/US2005/036680 WO2006055126A2 (en) | 2004-11-12 | 2005-10-14 | Method of making solar cell contacts |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210335668.2A Division CN102891215B (zh) | 2004-11-12 | 2005-10-14 | 制造太阳能电池接触层的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101379620A CN101379620A (zh) | 2009-03-04 |
CN101379620B true CN101379620B (zh) | 2012-10-24 |
Family
ID=36384917
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800385361A Expired - Fee Related CN101379620B (zh) | 2004-11-12 | 2005-10-14 | 制造太阳能电池接触层的方法 |
CN201210335668.2A Expired - Fee Related CN102891215B (zh) | 2004-11-12 | 2005-10-14 | 制造太阳能电池接触层的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210335668.2A Expired - Fee Related CN102891215B (zh) | 2004-11-12 | 2005-10-14 | 制造太阳能电池接触层的方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US20060102228A1 (zh) |
EP (1) | EP1810343A4 (zh) |
JP (2) | JP2008520094A (zh) |
KR (1) | KR101127085B1 (zh) |
CN (2) | CN101379620B (zh) |
AU (1) | AU2005307036B2 (zh) |
CA (1) | CA2584073C (zh) |
TW (1) | TWI380458B (zh) |
WO (1) | WO2006055126A2 (zh) |
Families Citing this family (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060102228A1 (en) | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
US8076570B2 (en) * | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
EP2015367A4 (en) * | 2006-04-25 | 2011-10-05 | Sharp Kk | ELECTRO-CONDUCTIVE PASTE FOR A SOLAR BATTERY ELECTRODE |
CN101663711B (zh) * | 2007-04-25 | 2013-02-27 | 费罗公司 | 含银和镍或银和镍合金的厚膜导体配方及由其制成的太阳能电池 |
KR101157771B1 (ko) | 2007-05-09 | 2012-06-25 | 히다치 가세고교 가부시끼가이샤 | 도전체 접속용 부재, 접속 구조 및 태양 전지 모듈 |
KR101081706B1 (ko) * | 2007-05-09 | 2011-11-09 | 히다치 가세고교 가부시끼가이샤 | 도전체의 접속 방법, 도전체 접속용 부재, 접속 구조 및 태양 전지 모듈 |
TWI370552B (en) * | 2007-06-08 | 2012-08-11 | Gigastorage Corp | Solar cell |
US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
WO2009029738A1 (en) * | 2007-08-31 | 2009-03-05 | Ferro Corporation | Layered contact structure for solar cells |
JP5272373B2 (ja) * | 2007-10-17 | 2013-08-28 | セントラル硝子株式会社 | 多結晶Si太陽電池 |
US7485245B1 (en) | 2007-10-18 | 2009-02-03 | E.I. Du Pont De Nemours And Company | Electrode paste for solar cell and solar cell electrode using the paste |
WO2009052141A1 (en) * | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
WO2009061984A2 (en) * | 2007-11-09 | 2009-05-14 | Technic, Inc. | Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction |
US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
KR101631711B1 (ko) * | 2008-03-21 | 2016-06-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 확산용 인 페이스트 및 그것을 이용한 태양 전지의 제조 방법 |
US7833808B2 (en) * | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
DE102008032554A1 (de) | 2008-07-10 | 2010-01-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metallhaltige Zusammensetzung, Verfahren zur Herstellung von elektrischen Kontaktstrukturen auf elektronischen Bauteilen sowie elektronisches Bauteil |
US7999175B2 (en) * | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
CN102203164B (zh) | 2008-10-22 | 2014-07-23 | 贺利氏贵金属北美康斯霍肯有限责任公司 | 导电聚合物组合物、触点、组件和方法 |
DE102009009840A1 (de) * | 2008-10-31 | 2010-05-27 | Bosch Solar Energy Ag | Verfahren, Vorrichtung und Drucksubstanz zur Herstellung einer metallischen Kontaktstruktur |
US9150966B2 (en) * | 2008-11-14 | 2015-10-06 | Palo Alto Research Center Incorporated | Solar cell metallization using inline electroless plating |
US8231934B2 (en) * | 2008-11-26 | 2012-07-31 | E. I. Du Pont De Nemours And Company | Conductive paste for solar cell electrode |
JP5059042B2 (ja) | 2009-02-25 | 2012-10-24 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペースト組成物 |
CN102356434A (zh) | 2009-03-19 | 2012-02-15 | E.I.内穆尔杜邦公司 | 用于太阳能电池电极的导体浆料 |
US7910393B2 (en) * | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
KR101144810B1 (ko) * | 2009-07-06 | 2012-05-11 | 엘지전자 주식회사 | 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법 |
JP5137923B2 (ja) * | 2009-09-18 | 2013-02-06 | 株式会社ノリタケカンパニーリミテド | 太陽電池用電極ペースト組成物 |
JP5550881B2 (ja) * | 2009-10-15 | 2014-07-16 | ナミックス株式会社 | 太陽電池及びその製造方法 |
EP2325848B1 (en) | 2009-11-11 | 2017-07-19 | Samsung Electronics Co., Ltd. | Conductive paste and solar cell |
US20110143497A1 (en) * | 2009-12-16 | 2011-06-16 | E. I. Du Pont De Nemours And Company | Thick film conductive composition used in conductors for photovoltaic cells |
KR101332429B1 (ko) * | 2009-12-17 | 2013-11-22 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용한 태양전지 |
US20110315210A1 (en) * | 2009-12-18 | 2011-12-29 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
KR101246686B1 (ko) * | 2010-03-19 | 2013-03-21 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용한 태양전지 |
TWI498308B (zh) * | 2010-05-04 | 2015-09-01 | Du Pont | 含有鉛-碲-鋰-鈦-氧化物之厚膜膏及其在半導體裝置之製造中的用途 |
CN103025676B (zh) * | 2010-07-02 | 2015-08-12 | 有限会社苏菲亚制造 | 接合材料 |
JP5351100B2 (ja) | 2010-07-02 | 2013-11-27 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
KR101741683B1 (ko) | 2010-08-05 | 2017-05-31 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
US20120031484A1 (en) | 2010-08-06 | 2012-02-09 | E. I. Du Pont De Nemours And Company | Conductive paste for a solar cell electrode |
KR101309809B1 (ko) * | 2010-08-12 | 2013-09-23 | 제일모직주식회사 | 태양전지용 알루미늄 페이스트 및 이를 이용한 태양전지 |
US8987586B2 (en) | 2010-08-13 | 2015-03-24 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
US8668847B2 (en) | 2010-08-13 | 2014-03-11 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
JP5454414B2 (ja) * | 2010-08-18 | 2014-03-26 | 住友金属鉱山株式会社 | 厚膜導体形成用組成物、この組成物を用いて形成された厚膜導体、およびこの厚膜導体を用いたチップ抵抗器 |
KR101741682B1 (ko) * | 2010-08-24 | 2017-05-31 | 삼성전자주식회사 | 도전성 페이스트와 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
CN102131315B (zh) * | 2010-09-28 | 2013-03-06 | 施吉承 | 电热膜发热管电极溶液 |
EP2448003A3 (en) | 2010-10-27 | 2012-08-08 | Samsung Electronics Co., Ltd. | Conductive paste comprising a conductive powder and a metallic glass for forming a solar cell electrode |
WO2012058358A1 (en) * | 2010-10-28 | 2012-05-03 | Ferro Corporation | Solar cell metallizations containing metal additive |
KR101130196B1 (ko) * | 2010-11-11 | 2012-03-30 | 엘지전자 주식회사 | 태양 전지 |
JP2012142422A (ja) * | 2010-12-28 | 2012-07-26 | Noritake Co Ltd | 太陽電池用導電性ペースト用ガラス |
US9680036B2 (en) * | 2011-01-06 | 2017-06-13 | Heraeus Precious Metals North America Conshohocken Llc | Organometallic and hydrocarbon additives for use with aluminum back solar cell contacts |
US8709862B2 (en) | 2011-01-06 | 2014-04-29 | Heraeus Precious Metals North America Conshohocken Llc | Vanadium, cobalt and strontium additives for use in aluminum back solar cell contacts |
US8815636B2 (en) | 2011-01-06 | 2014-08-26 | Heraeus Precious Metals North America Conshohocken Llc | Oxides and glasses for use with aluminum back solar cell contacts |
US9105370B2 (en) | 2011-01-12 | 2015-08-11 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
US8940195B2 (en) | 2011-01-13 | 2015-01-27 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
KR101765919B1 (ko) | 2011-01-25 | 2017-08-07 | 엘지이노텍 주식회사 | 유리 프릿, 페이스트 조성물 및 태양 전지 |
US8962424B2 (en) | 2011-03-03 | 2015-02-24 | Palo Alto Research Center Incorporated | N-type silicon solar cell with contact/protection structures |
CN102737751A (zh) * | 2011-04-08 | 2012-10-17 | 上海新天和电子材料有限公司 | 用于制备硅太阳能电池的背场铝导电浆料及其制造方法 |
JP5176159B1 (ja) * | 2011-07-19 | 2013-04-03 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 |
WO2013018408A1 (ja) | 2011-07-29 | 2013-02-07 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
JP6068474B2 (ja) * | 2011-09-09 | 2017-01-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀製の太陽電池接点 |
CN103021511B (zh) * | 2011-09-22 | 2016-05-11 | 比亚迪股份有限公司 | 一种晶体硅太阳能电池正面电极银浆及其制备方法 |
JP2013077774A (ja) * | 2011-09-30 | 2013-04-25 | Noritake Co Ltd | 太陽電池用導電性ペースト組成物 |
CN102364583B (zh) * | 2011-09-30 | 2013-04-03 | 江苏博迁光伏材料有限公司 | 无铅晶体硅太阳能电池背面银浆及其制备方法 |
KR20130045568A (ko) * | 2011-10-26 | 2013-05-06 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
DE102012221334B4 (de) | 2011-12-22 | 2018-10-25 | Schott Ag | Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen |
KR20140105847A (ko) * | 2011-12-22 | 2014-09-02 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 낮은 저항 접촉부를 위한 태양 전지 페이스트 |
US20150007881A1 (en) * | 2012-01-16 | 2015-01-08 | Heraeus Precious Metals North America Conshohocken Llc | Aluminum conductor paste for back surface passivated cells with locally opened vias |
CN104380391A (zh) * | 2012-04-18 | 2015-02-25 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 具有镍金属间组合物的太阳能电池触点 |
JP2013243279A (ja) * | 2012-05-22 | 2013-12-05 | Namics Corp | 太陽電池の電極形成用導電性ペースト |
CN103514973B (zh) * | 2012-06-25 | 2016-05-11 | 比亚迪股份有限公司 | 太阳能电池用导电浆料及其制备方法 |
DE102012216970A1 (de) | 2012-09-21 | 2014-03-27 | Schott Ag | Lotverbindung und ihre Verwendung |
EP2749546B1 (en) * | 2012-12-28 | 2018-04-11 | Heraeus Deutschland GmbH & Co. KG | An electro-conductive paste comprising elemental phosphorus in the preparation of electrodes in mwt solar cells |
KR20140092744A (ko) * | 2012-12-29 | 2014-07-24 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR20140092489A (ko) * | 2012-12-29 | 2014-07-24 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101802546B1 (ko) * | 2012-12-29 | 2017-11-30 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN103151096B (zh) * | 2013-02-06 | 2015-09-02 | 苏州达方电子有限公司 | 银浆及其用于制造光伏组件的用途 |
US9637409B2 (en) | 2013-04-18 | 2017-05-02 | Ferro Corporation | Low melting glass compositions |
EP2913140B1 (en) * | 2014-02-26 | 2018-01-03 | Heraeus Precious Metals North America Conshohocken LLC | Molybdenum-containing glass frit for electroconductive paste composition |
EP2913139B1 (en) * | 2014-02-26 | 2019-04-03 | Heraeus Precious Metals North America Conshohocken LLC | A glass comprising molybdenum and lead in a solar cell paste |
KR101598501B1 (ko) | 2014-08-25 | 2016-03-02 | 한국에너지기술연구원 | 실버프린팅을 이용한 태양전지의 투명전극의 제조방법과 이를 이용한 태양전지의 제조방법 |
TWI591652B (zh) | 2014-12-08 | 2017-07-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(五) |
CN104575667B (zh) * | 2014-12-24 | 2017-09-26 | 乐凯胶片股份有限公司 | 晶体硅太阳能电池正面用导电银浆 |
US10217876B2 (en) | 2015-09-25 | 2019-02-26 | Heraeus Precious Metals North America Conshohocken Llc | Poly-siloxane containing organic vehicle for electroconductive pastes |
WO2017052786A1 (en) * | 2015-09-25 | 2017-03-30 | Heraeus Precious Metals North America Conshohocken Llc | Poly-siloxane containing organic vehicle for electroconductive pastes |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
KR101961946B1 (ko) * | 2017-07-17 | 2019-03-25 | 한화큐셀앤드첨단소재 주식회사 | 유리프릿, 이를 포함하는 perc 태양전지 전극 형성용 페이스트, 및 perc 태양전지 전극 |
CN111116239B (zh) * | 2019-12-25 | 2022-06-07 | 西安英诺维特新材料有限公司 | 一种适用于pzt雾化片共烧工艺的电子浆料及共烧方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3839231A (en) * | 1972-04-27 | 1974-10-01 | Du Pont | Air fireable compositions containing vanadium oxide and boron silicide, and devices therefrom |
US4400214A (en) * | 1981-06-05 | 1983-08-23 | Matsushita Electric Industrial, Co., Ltd. | Conductive paste |
US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
US5198154A (en) * | 1990-03-19 | 1993-03-30 | Asahi Kasei Kogyo Kabushiki Kaisha | High temperature baking paste |
US5841044A (en) * | 1995-11-20 | 1998-11-24 | Degussa Aktiengesellschaft | Silver-iron material for electrical switching contacts (I) |
US5948320A (en) * | 1997-07-17 | 1999-09-07 | Alps Electric Co., Ltd. | Electro-conductive composition and electronic equipment using same |
US6036889A (en) * | 1995-07-12 | 2000-03-14 | Parelec, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decomposition compounds |
US6225392B1 (en) * | 1996-05-15 | 2001-05-01 | Asahi Glass Company Ltd. | Conductive paste |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
JPS5840845A (ja) * | 1981-09-03 | 1983-03-09 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
JPS5879837A (ja) * | 1981-10-31 | 1983-05-13 | Tdk Corp | 磁器コンデンサ |
JPS5883073A (ja) * | 1981-11-11 | 1983-05-18 | Shoei Kagaku Kogyo Kk | 導電性塗料 |
JPS5933868A (ja) * | 1982-08-20 | 1984-02-23 | Hitachi Ltd | 半導体装置用電極材料 |
US5698451A (en) * | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
JPH07109723B2 (ja) * | 1990-03-19 | 1995-11-22 | 旭化成工業株式会社 | 高温焼成用組成物及びペースト |
US5151377A (en) * | 1991-03-07 | 1992-09-29 | Mobil Solar Energy Corporation | Method for forming contacts |
JP3180299B2 (ja) * | 1992-05-20 | 2001-06-25 | 日本電気硝子株式会社 | 低融点封着用組成物 |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
JP3297531B2 (ja) * | 1994-06-27 | 2002-07-02 | 京セラ株式会社 | 導電性ペースト |
JPH0850806A (ja) * | 1994-08-05 | 1996-02-20 | Sumitomo Metal Mining Co Ltd | 厚膜導体用組成物 |
EP0729189A1 (en) * | 1995-02-21 | 1996-08-28 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of preparing solar cells and products obtained thereof |
CA2280865C (en) * | 1997-02-24 | 2008-08-12 | Superior Micropowders Llc | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
JP3760361B2 (ja) * | 1997-03-24 | 2006-03-29 | 株式会社村田製作所 | 太陽電池用導電性組成物 |
JPH10340621A (ja) * | 1997-06-05 | 1998-12-22 | Tanaka Kikinzoku Kogyo Kk | 導体ペースト |
JPH11329070A (ja) * | 1998-05-13 | 1999-11-30 | Murata Mfg Co Ltd | 導電ペースト |
US6632730B1 (en) * | 1999-11-23 | 2003-10-14 | Ebara Solar, Inc. | Method for self-doping contacts to a semiconductor |
JP2002367510A (ja) * | 2001-06-12 | 2002-12-20 | Asahi Glass Co Ltd | ガラスフリット焼成方法 |
WO2003025954A1 (en) | 2001-09-20 | 2003-03-27 | E. I. Du Pont De Nemours And Company | Silver conductor composition |
JP2003133567A (ja) * | 2001-10-24 | 2003-05-09 | Kyocera Corp | 太陽電池素子の製造方法およびそれに用いる電極材料 |
JP2003165744A (ja) * | 2001-11-26 | 2003-06-10 | Murata Mfg Co Ltd | 導電性ペースト |
US6814795B2 (en) * | 2001-11-27 | 2004-11-09 | Ferro Corporation | Hot melt conductor paste composition |
JP4161565B2 (ja) * | 2001-11-27 | 2008-10-08 | 旭硝子株式会社 | 電子回路基板作製用無鉛ガラスおよびガラスセラミックス組成物 |
US6866799B2 (en) * | 2002-05-09 | 2005-03-15 | Anuvu, Inc. | Water-soluble electrically conductive composition, modifications, and applications thereof |
JP2004207493A (ja) * | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 半導体装置、その製造方法および太陽電池 |
US20060102228A1 (en) * | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
-
2004
- 2004-11-12 US US10/988,208 patent/US20060102228A1/en not_active Abandoned
-
2005
- 2005-10-14 AU AU2005307036A patent/AU2005307036B2/en not_active Ceased
- 2005-10-14 JP JP2007541189A patent/JP2008520094A/ja active Pending
- 2005-10-14 WO PCT/US2005/036680 patent/WO2006055126A2/en active Application Filing
- 2005-10-14 KR KR1020077010508A patent/KR101127085B1/ko not_active IP Right Cessation
- 2005-10-14 EP EP05815033.5A patent/EP1810343A4/en not_active Withdrawn
- 2005-10-14 CN CN2005800385361A patent/CN101379620B/zh not_active Expired - Fee Related
- 2005-10-14 CN CN201210335668.2A patent/CN102891215B/zh not_active Expired - Fee Related
- 2005-10-14 CA CA2584073A patent/CA2584073C/en not_active Expired - Fee Related
- 2005-11-10 TW TW094139362A patent/TWI380458B/zh not_active IP Right Cessation
-
2009
- 2009-10-05 US US12/573,209 patent/US8889041B2/en active Active
-
2012
- 2012-10-23 JP JP2012233543A patent/JP5591901B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3839231A (en) * | 1972-04-27 | 1974-10-01 | Du Pont | Air fireable compositions containing vanadium oxide and boron silicide, and devices therefrom |
US4400214A (en) * | 1981-06-05 | 1983-08-23 | Matsushita Electric Industrial, Co., Ltd. | Conductive paste |
US5198154A (en) * | 1990-03-19 | 1993-03-30 | Asahi Kasei Kogyo Kabushiki Kaisha | High temperature baking paste |
US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
US6036889A (en) * | 1995-07-12 | 2000-03-14 | Parelec, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decomposition compounds |
US5841044A (en) * | 1995-11-20 | 1998-11-24 | Degussa Aktiengesellschaft | Silver-iron material for electrical switching contacts (I) |
US6225392B1 (en) * | 1996-05-15 | 2001-05-01 | Asahi Glass Company Ltd. | Conductive paste |
US5948320A (en) * | 1997-07-17 | 1999-09-07 | Alps Electric Co., Ltd. | Electro-conductive composition and electronic equipment using same |
Non-Patent Citations (1)
Title |
---|
JP昭58-83073A 1983.05.18 |
Also Published As
Publication number | Publication date |
---|---|
CA2584073C (en) | 2012-08-14 |
CN102891215B (zh) | 2016-01-20 |
CN102891215A (zh) | 2013-01-23 |
JP2013030804A (ja) | 2013-02-07 |
AU2005307036B2 (en) | 2011-10-13 |
CN101379620A (zh) | 2009-03-04 |
US20060102228A1 (en) | 2006-05-18 |
JP5591901B2 (ja) | 2014-09-17 |
EP1810343A2 (en) | 2007-07-25 |
EP1810343A4 (en) | 2015-10-14 |
US20100096598A1 (en) | 2010-04-22 |
KR101127085B1 (ko) | 2012-03-23 |
AU2005307036A1 (en) | 2006-05-26 |
CA2584073A1 (en) | 2006-05-26 |
TWI380458B (en) | 2012-12-21 |
US8889041B2 (en) | 2014-11-18 |
KR20070084100A (ko) | 2007-08-24 |
JP2008520094A (ja) | 2008-06-12 |
TW200631187A (en) | 2006-09-01 |
WO2006055126A3 (en) | 2007-11-15 |
WO2006055126A2 (en) | 2006-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101379620B (zh) | 制造太阳能电池接触层的方法 | |
US7435361B2 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices | |
EP2137739B1 (en) | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom | |
US8236598B2 (en) | Layered contact structure for solar cells | |
JP5349738B2 (ja) | 半導体デバイスの製造方法、およびそこで使用される導電性組成物 | |
JP5536916B2 (ja) | 半導体デバイス製造における微細線高アスペクト比スクリーン印刷のための導電性ペースト | |
JP5816738B1 (ja) | 導電性組成物 | |
JP2006302891A (ja) | 半導体デバイスの製造方法、およびそこで使用される導電性組成物 | |
WO2011140205A1 (en) | Thick-film pastes and solar cells made therefrom | |
AU2006255758A1 (en) | Lead free solar cell contacts | |
TWI638367B (zh) | 含有氧化銻之厚膜組成物及其於製造半導體裝置的用途 | |
JP5990315B2 (ja) | 導電性組成物 | |
JP2012142422A (ja) | 太陽電池用導電性ペースト用ガラス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HERAEUS PRECIOUS METALS NORTH AMERICA CONSHOHOCKEN Free format text: FORMER OWNER: FERRO CORP. Effective date: 20140415 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140415 Address after: Delaware Patentee after: Heraeus Precious Metals North America Conshohocken LLC Address before: Ohio, USA Patentee before: Ferro Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121024 Termination date: 20211014 |
|
CF01 | Termination of patent right due to non-payment of annual fee |