CN101379619A - 包括沟槽电容器和沟槽电阻器的半导体结构 - Google Patents
包括沟槽电容器和沟槽电阻器的半导体结构 Download PDFInfo
- Publication number
- CN101379619A CN101379619A CNA2007800016633A CN200780001663A CN101379619A CN 101379619 A CN101379619 A CN 101379619A CN A2007800016633 A CNA2007800016633 A CN A2007800016633A CN 200780001663 A CN200780001663 A CN 200780001663A CN 101379619 A CN101379619 A CN 101379619A
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- Prior art keywords
- trench
- resistor
- capacitor
- material layer
- conductive region
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- Granted
Links
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 71
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- 238000000034 method Methods 0.000 claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 50
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
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- 239000011358 absorbing material Substances 0.000 description 1
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- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 238000003672 processing method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
- H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/306,709 | 2006-01-09 | ||
US11/306,709 US7560761B2 (en) | 2006-01-09 | 2006-01-09 | Semiconductor structure including trench capacitor and trench resistor |
PCT/US2007/060266 WO2007082200A2 (en) | 2006-01-09 | 2007-01-09 | Semiconductor structure including trench capacitor and trench resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101379619A true CN101379619A (zh) | 2009-03-04 |
CN101379619B CN101379619B (zh) | 2010-08-11 |
Family
ID=38231981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800016633A Expired - Fee Related CN101379619B (zh) | 2006-01-09 | 2007-01-09 | 包括沟槽电容器和沟槽电阻器的半导体结构及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7560761B2 (zh) |
EP (1) | EP1979949B1 (zh) |
JP (1) | JP5172700B2 (zh) |
CN (1) | CN101379619B (zh) |
TW (1) | TWI392080B (zh) |
WO (1) | WO2007082200A2 (zh) |
Cited By (5)
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CN102956637A (zh) * | 2011-08-23 | 2013-03-06 | 南亚科技股份有限公司 | 具有电阻或电容的电路结构及其操作方法 |
CN103700643A (zh) * | 2013-12-23 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | 一种基于tsv工艺的转接板深槽电容及其制造方法 |
CN105493238A (zh) * | 2013-09-25 | 2016-04-13 | 英特尔公司 | 形成埋入式垂直电容器的方法和由此形成的结构 |
CN111033656A (zh) * | 2017-11-30 | 2020-04-17 | 株式会社村田制作所 | 电容器 |
WO2023115421A1 (zh) * | 2021-12-22 | 2023-06-29 | 华为技术有限公司 | 芯片及其形成方法、电子设备 |
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US7084483B2 (en) * | 2004-05-25 | 2006-08-01 | International Business Machines Corporation | Trench type buried on-chip precision programmable resistor |
US7888723B2 (en) * | 2008-01-18 | 2011-02-15 | International Business Machines Corporation | Deep trench capacitor in a SOI substrate having a laterally protruding buried strap |
US8030215B1 (en) * | 2008-02-19 | 2011-10-04 | Marvell International Ltd. | Method for creating ultra-high-density holes and metallization |
JP5563811B2 (ja) * | 2009-12-09 | 2014-07-30 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
US8298908B2 (en) | 2010-02-11 | 2012-10-30 | International Business Machines Corporation | Structure and method for forming isolation and buried plate for trench capacitor |
US8722503B2 (en) * | 2010-07-16 | 2014-05-13 | Texas Instruments Incorporated | Capacitors and methods of forming |
US8492241B2 (en) * | 2010-10-14 | 2013-07-23 | International Business Machines Corporation | Method for simultaneously forming a through silicon via and a deep trench structure |
US8614137B2 (en) | 2011-02-11 | 2013-12-24 | International Business Machines Corporation | Dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture |
US8546243B2 (en) | 2011-05-24 | 2013-10-01 | International Business Machines Corporation | Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture |
US9136319B2 (en) * | 2011-12-21 | 2015-09-15 | Globalfoundries Inc. | Method of making capacitor with a sealing liner and semiconductor device comprising same |
JP2013153130A (ja) | 2011-12-28 | 2013-08-08 | Rohm Co Ltd | チップ抵抗器 |
US8610249B2 (en) | 2012-03-30 | 2013-12-17 | International Business Machines Corporation | Non-planar capacitor and method of forming the non-planar capacitor |
CN103700644B (zh) * | 2013-12-23 | 2016-06-01 | 华进半导体封装先导技术研发中心有限公司 | 基于tsv工艺的转接板深槽电容及其制造方法 |
US9355997B2 (en) | 2014-03-12 | 2016-05-31 | Invensas Corporation | Integrated circuit assemblies with reinforcement frames, and methods of manufacture |
US20150262902A1 (en) | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
US9165793B1 (en) | 2014-05-02 | 2015-10-20 | Invensas Corporation | Making electrical components in handle wafers of integrated circuit packages |
US9741649B2 (en) | 2014-06-04 | 2017-08-22 | Invensas Corporation | Integrated interposer solutions for 2D and 3D IC packaging |
US9412806B2 (en) | 2014-06-13 | 2016-08-09 | Invensas Corporation | Making multilayer 3D capacitors using arrays of upstanding rods or ridges |
US9252127B1 (en) | 2014-07-10 | 2016-02-02 | Invensas Corporation | Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture |
US9418982B2 (en) | 2014-12-22 | 2016-08-16 | International Business Machines Corporation | Multi-layered integrated circuit with selective temperature coefficient of resistance |
US9397038B1 (en) | 2015-02-27 | 2016-07-19 | Invensas Corporation | Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates |
US10170464B2 (en) | 2015-06-05 | 2019-01-01 | International Business Machines Corporation | Compound semiconductor devices having buried resistors formed in buffer layer |
US9478504B1 (en) | 2015-06-19 | 2016-10-25 | Invensas Corporation | Microelectronic assemblies with cavities, and methods of fabrication |
US9824967B1 (en) | 2016-07-28 | 2017-11-21 | International Business Machines Corporation | Semiconductor resistor structures embedded in a middle-of-the-line (MOL) dielectric |
US20200243386A1 (en) * | 2019-01-25 | 2020-07-30 | United Microelectronics Corp. | Method for fabricating semiconductor device |
US11251263B2 (en) * | 2019-03-13 | 2022-02-15 | Semiconductor Components Industries, Llc | Electronic device including a semiconductor body or an isolation structure within a trench |
US10832839B1 (en) * | 2019-09-13 | 2020-11-10 | Globalfoundries Inc. | Metal resistors with a non-planar configuration |
US11637173B2 (en) | 2020-09-29 | 2023-04-25 | Globalfoundries U.S. Inc. | Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder |
US11444149B1 (en) | 2021-02-23 | 2022-09-13 | Globalfoundries U.S. Inc. | Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related method |
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US4933739A (en) * | 1988-04-26 | 1990-06-12 | Eliyahou Harari | Trench resistor structures for compact semiconductor memory and logic devices |
JP3130906B2 (ja) * | 1989-12-01 | 2001-01-31 | セイコーインスツルメンツ株式会社 | 半導体内壁に対する不純物の注入方法 |
US5382541A (en) * | 1992-08-26 | 1995-01-17 | Harris Corporation | Method for forming recessed oxide isolation containing deep and shallow trenches |
US5316978A (en) | 1993-03-25 | 1994-05-31 | Northern Telecom Limited | Forming resistors for intergrated circuits |
US5683939A (en) * | 1993-04-02 | 1997-11-04 | Harris Corporation | Diamond insulator devices and method of fabrication |
US5411913A (en) * | 1994-04-29 | 1995-05-02 | National Semiconductor Corporation | Simple planarized trench isolation and field oxide formation using poly-silicon |
US5814547A (en) * | 1997-10-06 | 1998-09-29 | Industrial Technology Research Institute | Forming different depth trenches simultaneously by microloading effect |
JP3161412B2 (ja) * | 1998-05-15 | 2001-04-25 | 日本電気株式会社 | 半導体装置 |
DE19960563B4 (de) * | 1999-12-15 | 2005-11-03 | Infineon Technologies Ag | Halbleiterstruktur und entsprechendes Herstellungsverfahren |
US6683345B1 (en) * | 1999-12-20 | 2004-01-27 | International Business Machines, Corp. | Semiconductor device and method for making the device having an electrically modulated conduction channel |
US6384452B1 (en) | 2000-07-17 | 2002-05-07 | Agere Systems Guardian Corp | Electrostatic discharge protection device with monolithically formed resistor-capacitor portion |
US6566191B2 (en) * | 2000-12-05 | 2003-05-20 | International Business Machines Corporation | Forming electronic structures having dual dielectric thicknesses and the structure so formed |
KR100422597B1 (ko) * | 2001-11-27 | 2004-03-16 | 주식회사 하이닉스반도체 | 다마신 공정에 의해 형성된 캐패시터와 금속배선을 가지는반도체소자 |
US6528383B1 (en) * | 2001-12-12 | 2003-03-04 | International Business Machines Corporation | Simultaneous formation of deep trench capacitor and resistor |
US7023041B2 (en) * | 2003-01-13 | 2006-04-04 | International Business Machines Corporation | Trench capacitor vertical structure |
US6999298B2 (en) * | 2003-09-18 | 2006-02-14 | American Semiconductor, Inc. | MIM multilayer capacitor |
-
2006
- 2006-01-09 US US11/306,709 patent/US7560761B2/en active Active
-
2007
- 2007-01-03 TW TW096100166A patent/TWI392080B/zh not_active IP Right Cessation
- 2007-01-09 JP JP2008549684A patent/JP5172700B2/ja not_active Expired - Fee Related
- 2007-01-09 WO PCT/US2007/060266 patent/WO2007082200A2/en active Application Filing
- 2007-01-09 EP EP07710011.3A patent/EP1979949B1/en not_active Not-in-force
- 2007-01-09 CN CN2007800016633A patent/CN101379619B/zh not_active Expired - Fee Related
-
2009
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Cited By (7)
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CN102956637A (zh) * | 2011-08-23 | 2013-03-06 | 南亚科技股份有限公司 | 具有电阻或电容的电路结构及其操作方法 |
CN102956637B (zh) * | 2011-08-23 | 2015-09-23 | 南亚科技股份有限公司 | 具有电阻或电容的电路结构及其操作方法 |
CN105493238A (zh) * | 2013-09-25 | 2016-04-13 | 英特尔公司 | 形成埋入式垂直电容器的方法和由此形成的结构 |
CN103700643A (zh) * | 2013-12-23 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | 一种基于tsv工艺的转接板深槽电容及其制造方法 |
CN103700643B (zh) * | 2013-12-23 | 2016-07-06 | 华进半导体封装先导技术研发中心有限公司 | 一种基于tsv工艺的转接板深槽电容及其制造方法 |
CN111033656A (zh) * | 2017-11-30 | 2020-04-17 | 株式会社村田制作所 | 电容器 |
WO2023115421A1 (zh) * | 2021-12-22 | 2023-06-29 | 华为技术有限公司 | 芯片及其形成方法、电子设备 |
Also Published As
Publication number | Publication date |
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EP1979949A2 (en) | 2008-10-15 |
WO2007082200A2 (en) | 2007-07-19 |
US20090267186A1 (en) | 2009-10-29 |
JP2009522820A (ja) | 2009-06-11 |
EP1979949B1 (en) | 2014-09-24 |
JP5172700B2 (ja) | 2013-03-27 |
US20070158725A1 (en) | 2007-07-12 |
TW200742036A (en) | 2007-11-01 |
US7560761B2 (en) | 2009-07-14 |
CN101379619B (zh) | 2010-08-11 |
EP1979949A4 (en) | 2010-08-25 |
US8110862B2 (en) | 2012-02-07 |
WO2007082200A3 (en) | 2008-07-03 |
TWI392080B (zh) | 2013-04-01 |
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