CN101365735B - 用于碳纳米管电子发射阴极的固化粘合材料 - Google Patents

用于碳纳米管电子发射阴极的固化粘合材料 Download PDF

Info

Publication number
CN101365735B
CN101365735B CN2006800502410A CN200680050241A CN101365735B CN 101365735 B CN101365735 B CN 101365735B CN 2006800502410 A CN2006800502410 A CN 2006800502410A CN 200680050241 A CN200680050241 A CN 200680050241A CN 101365735 B CN101365735 B CN 101365735B
Authority
CN
China
Prior art keywords
cnt
negative electrode
ppsq
thickener
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800502410A
Other languages
English (en)
Other versions
CN101365735A (zh
Inventor
李运钧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101365735A publication Critical patent/CN101365735A/zh
Application granted granted Critical
Publication of CN101365735B publication Critical patent/CN101365735B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/041—Carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/011—Nanostructured additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Conductive Materials (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

粘合材料即无机聚合物用于调配碳纳米管糊料。该材料可在200℃下固化，且在高达500℃下具有热稳定性。该粘合材料具有低释气性使其成为长使用寿命的场致发射设备的良好候选品。由于与该粘合材料具有更佳的粘附性，液态的可剥离强粘性聚合物可施加在CNT阴极，通过表面上的均匀的接触和压力而获得均一的激活。该可剥离聚合物膜既可用作激活层，也可用作掩模层，通过平版印刷法来制造用于场致发射设备的具有高分辨率图案的碳纳米管阴极。

Description

用于碳纳米管电子发射阴极的固化粘合材料
本申请要求序列号为60/755,978的美国临时申请的优先权。
技术领域
本发明总体上涉及场致发射设备，更具体而言，涉及用于场致发射的碳纳米管。
背景技术
碳纳米管(CNT)是用作场致发射显示器(FED)冷阴极材料的一种很有前途的候选品。可用低成本的印刷技术来制造CNT FED，这对于目前的平板显示器(例如液晶显示器(LCD))来说非常具有竞争性。阴极均一性是CNT FED市场化的关键因素。与场致发射均一性相关的主要问题是CNT的均一分散、CNT像素的物理大小均一性以及阴极的激活(activation)均一性，这是因为大部分印刷CNT阴极需要采用各种方法(包括粘胶带、辊、喷砂等)来激活。激活的方法可使得CNT向上提升或使CNT与粘合材料分离，从而使其在响应所施加的电场时位于高位(stand upward)。
另一方面，对于沉积在三极管结构体的几十微米的深腔中的CNT阴极，目前的激活方法对CNT阴极不能获得与对平面上的CNT阴极所能获得的相同激活效果。为了获得均一的激活，激活材料对CNT阴极表面的均一压力和均一物理接触对于获得均一的场致发射阴极是非常重要的。但是由于三极管结构体的深腔(的存在)，该激活材料不能以相同的压力均一地接触CNT阴极表面，从而导致了不均一的场致发射。
发明概述
一种新的粘合材料(无机聚合物)用于调配碳纳米管糊料(paste)。该材料可在200℃下固化，且在高达500℃的温度下具有热稳定性。该粘合材料具有低释气性(out-gassing)，使其成为使用寿命较长的场致发射设备的良好候选品。由于与该粘合材料具有更佳的粘附性，液态的可剥离强粘性聚合物能够施加在CNT阴极，从而通过表面上均一的接触和压力而获得均一的激活。该可剥离聚合物膜用作激活层，也可将其用作掩模层，通过平版印刷法来制造用于场致发射设备的具有高分辨率图案的碳纳米管阴极。
为了更好地理解下文中本发明的详细描述，上文已概括了本发明非常广泛的特征和技术优点。下文中将对构成本发明权利要求的主题的本发明其它特征和优点进行描述。
附图概述
为了更完整地理解本发明及其优点，现结合附图参考以下描述，其中：
图1显示了PPSQ梯状无机聚合物(HO-PPSQ-H)的化学结构；
图2显示了标准CNT和PPSQ CNT阴极的场致发射I-V的比较；
图3显示了被带激活的PPSQ CNT阴极；
图4显示了被X膜激活的PPSQ CNT阴极；
图5显示了在200℃和450℃下固化的PPSQ CNT阴极之间的场致发射I-V比较；
图6A和6B显示了填充入三极管结构体空腔中并固化形成用于激活的可剥离厚膜的液体聚合物(X膜水溶液)；
图7显示了通过在具有50微米深孔的三极管结构体上采用X膜激活而获得的均一场致发射图像；
图8A-8I显示了用可剥离膜以高分辨率形成图案并激活CNT阴极的方法；
图9显示了根据本发明的实施方式配置的场致发射设备；以及
图10显示了根据本发明的实施方式配置的数据处理系统。
发明详述
在下文的描述中，给出了许多具体的详细描述(例如特定的阴极材料等)以提供对本发明的全面理解。然而，对于本领域普通技术人员而言，本发明的实践中可不采用这些特定的具体描述来进行是显而易见的。在其它情况下，为避免因赘述而使本发明晦涩，采用了框图形式来显示熟知的电路。对于绝大多数部分，省略了涉及到定时考虑(timing consideration)等的详细描述，这是因为这些详细描述对于对本发明的完整理解并不是必需的，并且落于相关领域的普通技术人员所具备的技能之内。
现参考附图，其中所描述的元件不一定是按比例显示的，多个视图中的相同或类似元件用相同的参考数字来标示。
有人提出了采用液态的聚合物材料(U.S专利公开号2005/0129858A1，2005年6月16日)来填充空腔结构体，并在固化的聚合物膜从阴极表面剥离时激活所述CNT阴极。液体溶液易于渗透入多孔CNT阴极中，因此如果CNT(例如用CNT糊料通过喷涂和丝网印刷制得的样品)的粘附性不够好的话，大部分阴极材料将很容易被去除。由于聚合物具有高粘附性，可采用无机粉末来调节聚合物的粘附特性，以避免剥离该聚合物材料时对CNT阴极造成损伤。然而，由于无机粉末易于沉到聚合物的底部并且不易均匀悬浮在溶液中，很难将无机粉末均匀地分散在聚合物中。由此，粉末的不均一分散会在聚合物膜固化时导致其具有不均一的粘附特性。这将导致由含粉末聚合物膜激活的CNT阴极场致发射的不均一性。但是，如果可改善CNT阴极的粘附性，就可将纯的聚合物溶液用于均一的激活作用，而不必去除过多的CNT阴极材料或损伤CNT阴极。
CNT糊料通常包含有机或无机粘合剂、溶剂以及其它添加剂。在熔结过程熔化粉料(frit material)以粘合基片时，常将玻璃料粉末用作无机粘合剂来使得CNT粘着在基片上。不幸的是，基本上为金属氧化物粉末(PbO、SiC2和B2O3等)的玻璃料基质并不能将CNT牢固地结合到基片上，这是因为CNT与粉料的不相容性以及熔结后粉料不连续地覆盖在基片上。粉料的不连续覆盖还造成了CNT粘附不均一的问题，这是因为在大面积基片上的不均一粘附会导致施加激活过程时，CNT材料的不均一去除。为了改善CNT阴极的粘附性，需要用对CNT和基片均具有相对较强的结合强度的材料来配制CNT糊料。已报道了用旋压玻璃(spin-on glass)粘合剂(SOG)和其它有机载体来配制CNT糊料以改善场致发射特性(Jae-Hong Park等，Asian Display/IMID′04Digest，468，2004)。但是，研究显示SOG材料即便在固化后还会有释气问题，这点不利于该材料成为用于真空设备中的良好候选品(J.D.Romero、M.Khan、H.Fatemi和J.Turlo，J.Mater.Res.，6(9)，1996(1991))。CNT糊料所遭遇的另一个问题是通常需要用高温烧结过程来烧除糊料中的有机材料。该熔结过程通常会使得CNT的场致发射特性劣化，这是由CNT受到破坏以及糊料中的有机载体材料产生了影响CNT工作机能(workfunction)的残留物而造成的(R.Collazo，R.Schlesser，和Z.Sitar，Appl.Phys.Lett.78，2058(2001))。为了将CNT阴极的熔结温度降低到360℃，已对可在低温下烧制的有机粘合剂进行了研究(Sora Lee，Won Bin Im，Jong Hyuk Kang和DukYoung Jeon，J.Vac.Sci.Technol.B 23(2)，745(2005))。但是仍然需要用玻璃粉料来提高CNT阴极的粘附性。然而不幸的是，熔结后仍然可以检测到由有机粘合剂产生的低浓度残留材料。当场致发射设备是真空密闭时，由有机材料产生的残留物还会造成释气问题。美国专利公开号US2005/0242344中用作低温固化粘合材料的有机硅氧烷聚合物仍然需要超过400℃的烧尽温度，并且还是会产生残留材料。在CNT糊料配制中需要能够在低温下固化而不会使CNT劣化的新的粘合材料。该粘合材料还需具有高温热稳定性、低真空释气和对CNT的良好分散性。
梯状硅聚合物，聚苯基倍半硅氧烷(polyphenylsilsesquioxane，PPSQ)，是一种无机聚合物，它具有如图1所示的顺式间同立构双链结构(小J.F.布朗，J.Polym.Sci.1C(1963)83)。它已逐渐成为用于半导体绝缘膜、光纤粘合、航天飞船外部涂层和防潮涂层中的新一代材料。将该材料设计为具有SiO2的良好物理特性并具有与有机化学相关的良好官能团化学反应性选择。具体而言，由于聚苯基倍半硅氧烷((C6H5SiO1.5)x)是目前用于电子学、光电子学和其它材料技术中的硅基无机物的潜在替代品，并且与硅基无机物具有相容性，其已受到大量的关注。具有低真空释气特性的PPSQ材料已被认为是是一种能与用于场致发射设备的基片良好粘合的绝缘体(K.Nishimura，等，J.Vac.Sci.Techn.B 22(3)，1377(2004))。PPSQ型所吸收的气体相当低，由此有利于真空密闭装置的长使用寿命。可将PPSQ作为用于微电子学的具有良好粘附性的电解质材料，旋压涂覆或丝网印刷为基片上的薄和厚膜。该类材料还具有低的热收缩性。热退火的收缩率小于0.1％。此外，可通过湿和干蚀刻来使得PPSQ材料形成图案。与玻璃料粉末不同的是，PPSQ材料可溶于溶剂成为溶液，从而使得CNT可分散在粘附性粘合基质中以获得基片上的均一粘附层。该材料可在200℃固化，并在高达500℃时具有热稳定性，这就使其成为在CNT制剂中替代玻璃粉料或甚至有机粘合材料的良好粘合剂候选品。PPSQ型聚合物可通过其它化学官能团，例如C2H5O-PPSQ-C2H5和CH3-PPSQ-CH3，进行端部结合。
另一类无机聚合物——多面体低聚倍半硅氧烷(Polyhedral oligomericsilsesquioxane，POSS)也可用于CNT糊料制剂中。POSS化学技术具有独特的特征：其化学组成是二氧化硅(SiO2)和硅酮(R2SiO)的混杂的中间物(RSiO1.5)。
PPSQ CNT糊料制剂1：
通过用搅拌器混合40-50wt.％PPSQ材料和40-50wt.％甲苯15小时，来制备PPSQ材料。PPSQ的粘度可为500-5000CP。然后如下配制PPSQ CNT糊料：
在研钵中手工掺和20-30wt.％PPSQ+60-70wt.％稀释剂(松油醇，tepineol)+3-10wt.％SWNT+3-10wt.％石墨(2-15微米)。然后，用三辊式滚轧机处理该混合物5遍。加入石墨粉是为了产生边界，从而使得CNT不会完全埋入PPSQ材料，并确保在激活过程中部分CNT能被释放(free)。
可用网筛将PPSQ CNT糊料印刷到ITO玻璃上。活性CNT阴极面积可为3×3cm2。用焙烧方法烧制PPSQ CNT阴极(400℃，氮气中)。CNT阴极具有非常好的粘附性，这是因为具有泡沫片材使得几乎不能从该阴极的表面上去除材料。粘胶带激活对PPSQ CNT阴极起作用，从表面上去除了非常少的材料，并且激活前后，厚度(～7微米)保持不变。当软泡沫体和粘胶带用于激活时，可采用层压机，由具有适当压力的辊子将泡沫体或(粘胶)带施加到CNT阴极的表面上。与用含有玻璃料和有机载体的糊料制备的其它CNT阴极相比，PPSQ CNT阴极对基片具有好得多的粘附性。对于含有玻璃料或其它粘合剂的其它碳纳米管阴极而言，在施行粘胶带激活过程时，多于50％的材料会被去除。图2显示了两种PPSQ CNT阴极和一种标准CNT阴极的I-V曲线。标准CNT糊料包含CNT、有机载体、玻璃料和溶剂。
由于PPSQ基CNT阴极具有较高的粘附性，可用水基聚合物(购自传送设备公司的X-膜复制品X2020)激活CNT阴极。该水基聚合物溶液包含56-78wt.％水、17-34wt.％乙醇、3-8wt.％乙醇均聚物和1-2wt.％丁醇(buthl alcohol)。激活过程如下：
1)将一滴液体聚合物(X-膜)溶液置于CNT阴极上。该液体溶液均匀地漫没全部阴极。
2)在60℃的烘箱或空气中干燥X-膜。可通过调节X-膜溶液的体积将X-膜的厚度控制在50微米以上。
3)剥离X-膜以激活CNT阴极。
液体溶液易于渗透入多孔CNT阴极中，因此如果CNT(例如通过喷涂制备的样品以及某些印制的样品)的粘附性不够好的话，大部分阴极材料将被去除。X-膜激活对于具有良好粘附性的印制PPSQ CNT阴极作用良好。标准CNT阴极在450℃下烧制且能被带或泡沫体激活，但X-膜则去除了几乎所有CNT阴极材料，由于留在基片上的CNT非常少导致场致发射非常差。与美国专利公开号US2005/0129858A1中所用的复杂的聚合物材料不同，X-膜是一种水溶性聚合物且能在室温下在空气中硬化。由于PPSQ CNT糊料比起常规的CNT糊料具有好得多的粘附性，PPSQ CNT糊料也是很独特的。
采用X-膜激活的优点：
1)三极管应用中的孔结构基片可被液体溶液自然填充，并产生与孔中CNT阴极表面的均一接触。
2)采用层压机的激活在大阴极上通常会产生压力变化，由此造成了不均一的问题。X-膜激活可无需采用层压机。
3)由于固化后形成了整张聚合物片，因此激活后在阴极上观察不到明显的残留物。用带的话，胶粘剂(adhesive)和塑性基底分离，一些胶粘剂残留物会留在阴极上。
如图2所示，用X-膜激活的PPSQ CNT阴极具有改善的场致发射特征。图3显示由带激活的PPSQ CNT阴极(30mA，4.2V/微米)的场致发射照明。图4显示了由X-膜激活的PPSQ CNT阴极(30mA，3.9V/微米)的场致发射照明。
PPSQ CNT糊料制剂2：
还可用双壁CNT(DWNT)来配制CNT糊料。在研钵中手工掺和15-25wt.％PPSQ(以甲苯为溶剂)、65-80wt.％稀释剂、2-10wt.％DWNT和2-10％石墨(2-15微米)。然后，用三辊式滚轧机处理该混合物至少5遍。
可用网筛将PPSQ CNT糊料印刷到ITO玻璃上(活性CNT阴极面积可为3×3cm2)。通过烘烤过程使PPSQ CNT阴极固化(200℃空气中)1小时。该CNT阴极具有良好的粘附性。带激活对PPSQ CNT阴极起作用，仅从表面上去除了极少的材料，激活前后厚度基本上不变。图5显示了200℃下固化和450℃下固化的PPSQCNT阴极的I-V曲线。这表明了较低温度的固化使CNT免遭劣化，由此产生了较低的电场。
PPSQ CNT糊料制剂3：
还可将PPSQ加入其它CNT糊料以提高粘附性。可将双壁CNT(DWNT)糊料用作主糊料，与5-15wt.％PPSQ材料进行配制。可将主DWNT糊料与10-20wt.％CNT、30-65wt.％有机载体、30-60wt.％稀释剂以及5-20wt.％玻璃料粉配制在一起。可用研棒在研钵中掺和该混合物，然后再用三辊式滚轧机进一步分散进行研磨。在配制过程中，可加入稀释剂(松油醇)来调节该糊料的粘度。糊料的粘度可为9000CP-90,000厘泊(CP)。
PPSQ CNT糊料制剂4：
在研钵中手工掺和10-30wt.％PPSQ+40-70wt.％稀释剂(松油醇)+3-10wt.％SWNT+(6-20wt.％)有机载体+3-20wt.％石墨(2-15微米)。有机载体包括乙基纤维素(15-20％)、丁基乙酸卡必醇酯(60-70％)和丁基卡必醇(10-20％)。然后，用三辊式滚轧机处理该混合物5次。该糊料的粘度可为10000CP-90000厘泊(CP)。可在390℃下烧制用该糊料制剂制备的CNT阴极，以烧尽有机载体材料。该制剂中的载体材料的作用是使得PPSQ基糊料更适于印刷。
如图6所示，用筛网将用PPSQ改良的CNT糊料丝网印刷到具有50μm深孔的三极管材料体上。图6A显示了沉积了电极3和绝缘体2的基片4，在基片4上以沉积在三极管结构体孔中的CNT阴极1形成图案。图6B显示了用X-膜的液体材料形成的可剥离聚合物膜5。将液体聚合物(X-膜的水溶液)填充入三极管材料体的空腔中，使其固化形成用于激活CNT阴极1的可剥离厚膜(超过50μm)。
如图7所示，采用X-膜激活，可获得具有深腔的非常均一的CNT阴极。图7显示了场致发射照明的数字图像，说明了在具有50μm深孔的三极管结构体上采用X-膜激活法(如图6所示)可获得非常均一的场致发射。在该实施例中，像素大小为250×800μm2。
采用PPSQ CNT糊料和X-膜的形成高清晰度图案的CNT阴极：
丝网印刷的分辨率限制使其难以获得特征小于50μm的图案。可采用UV(紫外光)敏感性聚合物来为CNT形成图案。不幸的是，该聚合物材料在固化后有残留物，并且在CNT阴极形成图案后还需要一个激活过程。此外，通常需要垂直提升过程来去除暴露于UV的区域。在该垂直提升过程中，通常使用会影响CNT阴极的溶剂。已证明可采用标准的平版印刷术为可剥离X-膜形成图案。以下揭示了采用可剥离膜的方法，可用相当高的分辨率为CNT阴极形成图案，也可在去除可剥离膜时激活(如图8所示)。由于可以相对较高的蚀刻率来蚀刻PPSQ材料，可采用RIE(反应离子蚀刻)以CF4和O2蚀刻PPSQ CNT阴极。图8A中，将电极沉积在基片上。在图8B中，印刷PPSQ CNT阴极以继续该过程。图8C显示了旋压涂覆在阴极顶部的X-膜。图8D显示了位于X-膜层上方的光致抗蚀剂。在图8E中，以所需的方式在光致抗蚀剂上形成图案以继续该过程。在图8F中，暴露并用光致抗蚀剂以常规的石版印刷技术去除X-膜。在图8G中，采用干蚀刻去除暴露的PPSQ CNT阴极材料。在图8H中，沉积厚X-膜，然后在图8I中，剥离厚X-膜以激活图案化的CNT阴极。
图9显示了用例如上文所制造的阴极制备的场致发射显示器938的一部分。阴极中包括导电层906。阳极可包含玻璃基片902、铟锡层903以及荧光层904。在阳极和阴极之间设置电场。该显示器938可用在例如如图10所示的数据处理系统1013中。
图10A描绘了用于实践本发明的代表性硬件环境，显示了本发明数据处理系统1013的示例性硬件配置，其具有中央处理单元(CPU)1010(例如常规的微处理器)和通过系统总线1012相互连接的多个其它单元。数据处理系统1013包括随机存取存储器(RAM)1014、只读存储器(ROM)1016、用于将周围设备(例如磁盘部件1020和磁带驱动器1040)连接到总线1012的输入/输出(I/O)适配器、将键盘1024、鼠标1026和/或其它接口设备(例如未示出的触屏设备)连接到总线1012的用户接口适配器1022、将数据处理系统1013连接到数据处理网络的通信适配器1034、以及将总线1012连接到显示设备1038的显示适配器1036。CPU 1010可包括未在该图中示出的其它电路，其可包括微处理器中常见的电路，例如执行部件、总线接口单元、数学逻辑单元等。
虽然已详细描述了本发明及其优点，应理解可不脱离由所附权利要求所限定的本发明精神和范围地进行各种变化、替换和变更。

Claims (4)

1.一种场致发射阴极，其包含：
基片；
位于基片上的场发射体，所述场发射体包含糊料，该糊料包含碳纳米管和无机聚合物，其中，所述无机聚合物是梯状含硅聚合物；以及
电路，该电路产生电场，使得所述场发射体场致发射电子，
其中，所述阴极被构造为通过由所述阴极上方的液体聚合物溶液形成膜此后将所述膜与所述阴极剥离来激活。
2.如权利要求1所述的场致发射阴极，其特征在于，所述无机聚合物包含PPSQ。
3.如权利要求1所述的场致发射阴极，其特征在于，所述无机聚合物包含POSS。
4.如权利要求1所述的场致发射阴极，其特征在于，所述糊料还包含石墨粉。
CN2006800502410A 2006-01-03 2006-12-20 用于碳纳米管电子发射阴极的固化粘合材料 Expired - Fee Related CN101365735B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US75597806P 2006-01-03 2006-01-03
US60/755,978 2006-01-03
US11/612,313 2006-12-18
US11/612,313 US8264137B2 (en) 2006-01-03 2006-12-18 Curing binder material for carbon nanotube electron emission cathodes
PCT/US2006/062396 WO2007111748A2 (en) 2006-01-03 2006-12-20 Curing binder material for carbon nanotube electron emission cathodes

Publications (2)

Publication Number Publication Date
CN101365735A CN101365735A (zh) 2009-02-11
CN101365735B true CN101365735B (zh) 2013-01-23

Family

ID=38541602

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800502410A Expired - Fee Related CN101365735B (zh) 2006-01-03 2006-12-20 用于碳纳米管电子发射阴极的固化粘合材料

Country Status (6)

Country Link
US (1) US8264137B2 (zh)
JP (1) JP2009522203A (zh)
KR (1) KR101368255B1 (zh)
CN (1) CN101365735B (zh)
TW (1) TWI449664B (zh)
WO (1) WO2007111748A2 (zh)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101166015B1 (ko) * 2006-04-26 2012-07-19 삼성에스디아이 주식회사 전자 방출원, 전자 방출원 형성용 조성물, 상기 전자방출원의 제조 방법 및 상기 전자 방출원을 구비한 전자방출 소자
CN101458594B (zh) * 2007-12-12 2012-07-18 清华大学 触摸屏及显示装置
CN101458593B (zh) * 2007-12-12 2012-03-14 清华大学 触摸屏及显示装置
CN101458603B (zh) * 2007-12-12 2011-06-08 北京富纳特创新科技有限公司 触摸屏及显示装置
CN101620454A (zh) * 2008-07-04 2010-01-06 清华大学 便携式电脑
CN101470560B (zh) * 2007-12-27 2012-01-25 清华大学 触摸屏及显示装置
CN101458602B (zh) * 2007-12-12 2011-12-21 清华大学 触摸屏及显示装置
CN101458606B (zh) * 2007-12-12 2012-06-20 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101419519B (zh) * 2007-10-23 2012-06-20 清华大学 触摸屏
CN101458596B (zh) * 2007-12-12 2011-06-08 北京富纳特创新科技有限公司 触摸屏及显示装置
CN101470566B (zh) * 2007-12-27 2011-06-08 清华大学 触摸式控制装置
CN101458595B (zh) * 2007-12-12 2011-06-08 清华大学 触摸屏及显示装置
CN101655720B (zh) * 2008-08-22 2012-07-18 清华大学 个人数字助理
CN101470558B (zh) * 2007-12-27 2012-11-21 清华大学 触摸屏及显示装置
CN101458598B (zh) * 2007-12-14 2011-06-08 清华大学 触摸屏及显示装置
CN101458600B (zh) * 2007-12-14 2011-11-30 清华大学 触摸屏及显示装置
CN101464763B (zh) * 2007-12-21 2010-09-29 清华大学 触摸屏的制备方法
CN101458604B (zh) * 2007-12-12 2012-03-28 清华大学 触摸屏及显示装置
CN101458599B (zh) * 2007-12-14 2011-06-08 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101458605B (zh) * 2007-12-12 2011-03-30 鸿富锦精密工业（深圳）有限公司 触摸屏及显示装置
CN101458597B (zh) * 2007-12-14 2011-06-08 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101458608B (zh) * 2007-12-14 2011-09-28 清华大学 触摸屏的制备方法
CN101656769B (zh) * 2008-08-22 2012-10-10 清华大学 移动电话
CN101458609B (zh) * 2007-12-14 2011-11-09 清华大学 触摸屏及显示装置
CN101470559B (zh) * 2007-12-27 2012-11-21 清华大学 触摸屏及显示装置
CN101419518B (zh) * 2007-10-23 2012-06-20 清华大学 触摸屏
CN101676832B (zh) * 2008-09-19 2012-03-28 清华大学 台式电脑
CN101458975B (zh) * 2007-12-12 2012-05-16 清华大学 电子元件
CN101458607B (zh) * 2007-12-14 2010-12-29 清华大学 触摸屏及显示装置
CN101464757A (zh) * 2007-12-21 2009-06-24 清华大学 触摸屏及显示装置
CN101458601B (zh) * 2007-12-14 2012-03-14 清华大学 触摸屏及显示装置
CN101464764B (zh) * 2007-12-21 2012-07-18 清华大学 触摸屏及显示装置
CN101470565B (zh) * 2007-12-27 2011-08-24 清华大学 触摸屏及显示装置
CN101464766B (zh) * 2007-12-21 2011-11-30 清华大学 触摸屏及显示装置
US8574393B2 (en) * 2007-12-21 2013-11-05 Tsinghua University Method for making touch panel
CN101464765B (zh) * 2007-12-21 2011-01-05 鸿富锦精密工业（深圳）有限公司 触摸屏及显示装置
US8237677B2 (en) * 2008-07-04 2012-08-07 Tsinghua University Liquid crystal display screen
US8390580B2 (en) 2008-07-09 2013-03-05 Tsinghua University Touch panel, liquid crystal display screen using the same, and methods for making the touch panel and the liquid crystal display screen
CN101924816B (zh) * 2009-06-12 2013-03-20 清华大学 柔性手机
CN102013371B (zh) * 2009-09-04 2012-11-21 清华大学 一种冷阴极的表面处理方法
TWI407485B (zh) * 2009-09-22 2013-09-01 Hon Hai Prec Ind Co Ltd 一種冷陰極的表面處理方法
CN102443247B (zh) * 2011-09-16 2013-01-23 桂林理工大学 一种氧化石墨烯接枝poss改性环氧树脂的制备方法
CN104838342B (zh) * 2012-12-07 2018-03-13 3M创新有限公司 在基板上制作透明导体的方法
JP5881019B2 (ja) * 2013-03-07 2016-03-09 国立大学法人 鹿児島大学 カーボンナノチューブ分散剤、その製造方法、カーボンナノチューブ分散液、及びその製造方法
JP6487740B2 (ja) * 2014-04-07 2019-03-20 株式会社日本触媒 ポリシロキサン化合物、その製造方法、及び、ポリシロキサン化合物と導電性炭素材料とを含む導電性炭素材料含有組成物
CN105448624B (zh) * 2014-07-10 2017-09-01 清华大学 场发射阴极的制备方法
CN111128637B (zh) * 2018-11-01 2021-02-26 清华大学 场发射体的制备方法

Family Cites Families (184)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5458784A (en) 1990-10-23 1995-10-17 Catalytic Materials Limited Removal of contaminants from aqueous and gaseous streams using graphic filaments
US5547748A (en) 1994-01-14 1996-08-20 Sri International Carbon nanoencapsulates
US5691101A (en) 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
US5866434A (en) * 1994-12-08 1999-02-02 Meso Scale Technology Graphitic nanotubes in luminescence assays
US6203814B1 (en) * 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes
US6673533B1 (en) * 1995-03-10 2004-01-06 Meso Scale Technologies, Llc. Multi-array multi-specific electrochemiluminescence testing
US6066448A (en) * 1995-03-10 2000-05-23 Meso Sclae Technologies, Llc. Multi-array, multi-specific electrochemiluminescence testing
US5512368A (en) * 1995-03-16 1996-04-30 E. I. Du Pont De Nemours And Company Fibers reinforced with inorganic whiskers
JPH09111135A (ja) * 1995-10-23 1997-04-28 Mitsubishi Materials Corp 導電性ポリマー組成物
US5800706A (en) 1996-03-06 1998-09-01 Hyperion Catalysis International, Inc. Nanofiber packed beds having enhanced fluid flow characteristics
US5965202A (en) 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US6017390A (en) * 1996-07-24 2000-01-25 The Regents Of The University Of California Growth of oriented crystals at polymerized membranes
JP2000516708A (ja) 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置
US6713173B2 (en) * 1996-11-16 2004-03-30 Nanomagnetics Limited Magnetizable device
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
US6770583B2 (en) 1997-03-14 2004-08-03 The United States Of America As Represented By The Secretary Of The Navy Transistion metal containing ceramic with metal nanoparticles
US6205016B1 (en) 1997-06-04 2001-03-20 Hyperion Catalysis International, Inc. Fibril composite electrode for electrochemical capacitors
DE19745549C2 (de) 1997-10-10 1999-11-04 Mannesmann Ag Gasspeicher
US6126888A (en) 1998-01-09 2000-10-03 Quantum Group Inc. Method for making strong mantles and other ceramic structures
US6287765B1 (en) 1998-05-20 2001-09-11 Molecular Machines, Inc. Methods for detecting and identifying single molecules
US6705152B2 (en) * 2000-10-24 2004-03-16 Nanoproducts Corporation Nanostructured ceramic platform for micromachined devices and device arrays
DE19859654A1 (de) 1998-12-15 2000-06-29 Mannesmann Ag Vorrichtung zum Speichern von Druckgas
EP1144197B1 (en) * 1999-01-15 2003-06-11 3M Innovative Properties Company Thermal Transfer Method.
US6555945B1 (en) * 1999-02-25 2003-04-29 Alliedsignal Inc. Actuators using double-layer charging of high surface area materials
US6333016B1 (en) 1999-06-02 2001-12-25 The Board Of Regents Of The University Of Oklahoma Method of producing carbon nanotubes
US6444864B1 (en) 1999-06-07 2002-09-03 Drexel University Thermal plasma process for recovering monomers and high value carbons from polymeric materials
EP2239794A3 (en) 1999-07-02 2011-03-23 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
DE10023456A1 (de) 1999-07-29 2001-02-01 Creavis Tech & Innovation Gmbh Meso- und Nanoröhren
US6299812B1 (en) 1999-08-16 2001-10-09 The Board Of Regents Of The University Of Oklahoma Method for forming a fibers/composite material having an anisotropic structure
US6723396B1 (en) * 1999-08-17 2004-04-20 Western Washington University Liquid crystal imprinting
US6423768B1 (en) 1999-09-07 2002-07-23 General Electric Company Polymer-organoclay composite compositions, method for making and articles therefrom
US6491891B1 (en) * 1999-09-10 2002-12-10 Ut-Battelle, Inc. Gelcasting polymeric precursors for producing net-shaped graphites
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
JP3834746B2 (ja) 1999-09-22 2006-10-18 潤二 伊藤 多孔質ゴム系電極用バインダー、これを用いた多孔質ゴム系電極及び多孔質ゴム系電極基材
US6318649B1 (en) 1999-10-06 2001-11-20 Cornerstone Technologies, Llc Method of creating ultra-fine particles of materials using a high-pressure mill
EP1234167A4 (en) * 1999-11-18 2005-06-29 Mst Technology Gmbh OPTICAL DETECTOR OF HYDROGEN
US6352782B2 (en) 1999-12-01 2002-03-05 General Electric Company Poly(phenylene ether)-polyvinyl thermosetting resin
US6401526B1 (en) * 1999-12-10 2002-06-11 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotubes and methods of fabrication thereof using a liquid phase catalyst precursor
US6521703B2 (en) * 2000-01-18 2003-02-18 General Electric Company Curable resin composition, method for the preparation thereof, and articles derived thereform
CN1255473C (zh) * 2000-02-16 2006-05-10 旭化成株式会社 聚酰胺树脂组合物
US6991528B2 (en) * 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6800155B2 (en) 2000-02-24 2004-10-05 The United States Of America As Represented By The Secretary Of The Army Conductive (electrical, ionic and photoelectric) membrane articlers, and method for producing same
US6414086B1 (en) * 2000-02-29 2002-07-02 Howmedica Osteonics Corp. Compositions, processes and methods of improving the wear resistance of prosthetic medical devices
US6610351B2 (en) 2000-04-12 2003-08-26 Quantag Systems, Inc. Raman-active taggants and their recognition
US6894100B2 (en) * 2000-04-26 2005-05-17 Asahi Kasei Kabushiki Kaisha Electrically conductive resin composition and production process thereof
US6706963B2 (en) * 2002-01-25 2004-03-16 Konarka Technologies, Inc. Photovoltaic cell interconnection
US6913713B2 (en) 2002-01-25 2005-07-05 Konarka Technologies, Inc. Photovoltaic fibers
US6919119B2 (en) 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
US6384727B1 (en) * 2000-08-02 2002-05-07 Motorola, Inc. Capacitively powered radio frequency identification device
CA2419930A1 (en) * 2000-08-15 2002-02-21 The Trustees Of The University Of Pennsylvania Directed assembly of nanometer-scale molecular devices
US7094285B2 (en) 2000-09-20 2006-08-22 Goodrich Corporation Inorganic matrix compositions, composites incorporating the matrix, and process of making the same
EP1233259A4 (en) * 2000-09-21 2005-06-22 Matsushita Electric Ind Co Ltd SENSOR MICROSCOPE-PROBE PROBE, PROCESS FOR PRODUCING SAME, SCANNING MICROSCOPE PROBE HAVING SAME, AND POLYMER PROCESSING METHOD USING SAME MICROSCOPE
US6861481B2 (en) * 2000-09-29 2005-03-01 Solvay Engineered Polymers, Inc. Ionomeric nanocomposites and articles therefrom
DE10196796T1 (de) * 2000-10-16 2003-09-11 Asahi Chemical Ind Apatit-verstärkte Harz-Zusammensetzung
JP4182657B2 (ja) * 2000-10-17 2008-11-19 セイコーエプソン株式会社 インクジェット式記録装置
US6682677B2 (en) * 2000-11-03 2004-01-27 Honeywell International Inc. Spinning, processing, and applications of carbon nanotube filaments, ribbons, and yarns
US6599446B1 (en) 2000-11-03 2003-07-29 General Electric Company Electrically conductive polymer composite compositions, method for making, and method for electrical conductivity enhancement
JP4887558B2 (ja) 2000-11-07 2012-02-29 ソニー株式会社 燃料電池の使用方法
ATE508163T1 (de) * 2000-11-21 2011-05-15 Tyco Electronics Corp Pigmente und zusammensetzungen zur verwendung bei der lasermarkierung
KR20080005303A (ko) 2000-12-11 2008-01-10 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US6783746B1 (en) 2000-12-12 2004-08-31 Ashland, Inc. Preparation of stable nanotube dispersions in liquids
AU2002311751A1 (en) 2001-01-10 2002-10-15 Alliant Techsystems Inc. Fiber-reinforced rocket motor insulation
US6696565B2 (en) * 2001-01-17 2004-02-24 Purdue Research Foundation Method and associated pyrimido[4,5-d]pyrimidine-2,5-diones and pyrido[4,3-d]pyrimidin-2-ones for forming nanotubes
US6538725B2 (en) * 2001-01-22 2003-03-25 General Electric Company Method for determination of structural defects of coatings
US6782154B2 (en) 2001-02-12 2004-08-24 Rensselaer Polytechnic Institute Ultrafast all-optical switch using carbon nanotube polymer composites
JP3809342B2 (ja) * 2001-02-13 2006-08-16 喜萬 中山 受発光プローブ及び受発光プローブ装置
US7033525B2 (en) * 2001-02-16 2006-04-25 E.I. Dupont De Nemours And Company High conductivity polyaniline compositions and uses therefor
JP3991602B2 (ja) * 2001-03-02 2007-10-17 富士ゼロックス株式会社 カーボンナノチューブ構造体の製造方法、配線部材の製造方法および配線部材
WO2002076724A1 (en) * 2001-03-26 2002-10-03 Eikos, Inc. Coatings containing carbon nanotubes
WO2002076430A1 (en) * 2001-03-26 2002-10-03 Eikos, Inc. Carbon nanotubes in structures and repair compositions
DE10116232A1 (de) 2001-04-02 2002-10-10 Creavis Tech & Innovation Gmbh Verfahren zur Herstellung von Formkörpern mit innenbeschichteten Hohlräumen
US6977171B1 (en) 2001-04-03 2005-12-20 University Of Florida Detoxification and decontamination using nanotechnology therapy
WO2002081372A2 (en) * 2001-04-06 2002-10-17 Carnegie Mellon University A process for the preparation of nanostructured materials
US6689835B2 (en) * 2001-04-27 2004-02-10 General Electric Company Conductive plastic compositions and method of manufacture thereof
JP4207398B2 (ja) 2001-05-21 2009-01-14 富士ゼロックス株式会社 カーボンナノチューブ構造体の配線の製造方法、並びに、カーボンナノチューブ構造体の配線およびそれを用いたカーボンナノチューブデバイス
US7052854B2 (en) * 2001-05-23 2006-05-30 University Of Florida Research Foundation, Inc. Application of nanotechnology and sensor technologies for ex-vivo diagnostics
US6984678B2 (en) 2001-05-24 2006-01-10 Asahi Kasei Kabushiki Kaisha Thermoplastic resin composition and molded articles
WO2002100931A1 (en) 2001-06-08 2002-12-19 Eikos, Inc. Nanocomposite dielectrics
WO2003040446A2 (en) * 2001-06-15 2003-05-15 The Pennsylvania State Research Foundation Method of purifying nanotubes and nanofibers using electromagnetic radiation
US7077939B1 (en) 2001-06-18 2006-07-18 The Texas A&M University System Method and apparatus for nanoparticle transport and detection
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
EP1444701A4 (en) 2001-07-27 2005-01-12 Eikos Inc CONFORMAL COATINGS CONTAINING CARBON NANOTUBES
JP2003045760A (ja) 2001-07-30 2003-02-14 Asahi Glass Co Ltd 積層型電気二重層キャパシタモジュール
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
JP2003050280A (ja) 2001-08-03 2003-02-21 Konica Corp 放射線画像検出器
WO2003016599A1 (fr) * 2001-08-09 2003-02-27 Asahi Kasei Kabushiki Kaisha Element a semi-conducteur organique
US7001556B1 (en) * 2001-08-16 2006-02-21 The Board Of Regents University Of Oklahoma Nanotube/matrix composites and methods of production and use
US6566665B2 (en) * 2001-08-17 2003-05-20 International Business Machines Corporation Method and apparatus for linking and/or patterning self-assembled objects
ATE414675T1 (de) * 2001-08-29 2008-12-15 Georgia Tech Res Inst Zusammensetzungen, welche stäbchenförmige polymere und nanoröhrenförmige strukturen umfassen, sowie verfahren zur herstellung derselben
EP1423861A1 (en) * 2001-08-30 2004-06-02 Koninklijke Philips Electronics N.V. Magnetoresistive device and electronic device
EP1291932A3 (en) 2001-09-05 2006-10-18 Konica Corporation Organic thin-film semiconductor element and manufacturing method for the same
US6867295B2 (en) * 2001-09-07 2005-03-15 Dionex Corporation Ion exchange cryptands covalently bound to substrates
CA3081228C (en) 2001-09-10 2022-02-15 Meso Scale Technologies, Llc Assay buffer, compositions containing the same, and methods of using the same
US6991876B2 (en) * 2001-10-05 2006-01-31 Sri International Metal/active oxygen batteries
US6815075B2 (en) 2001-10-15 2004-11-09 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor
US7074519B2 (en) 2001-10-26 2006-07-11 The Regents Of The University Of California Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
US6811724B2 (en) 2001-12-26 2004-11-02 Eastman Kodak Company Composition for antistat layer
US20030134212A1 (en) 2001-12-26 2003-07-17 Eastman Kodak Company Element with antistat layer
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
AUPR977301A0 (en) 2001-12-28 2002-01-31 Energy Storage Systems Pty Ltd An electrode for an energy storage device
US6887450B2 (en) * 2002-01-02 2005-05-03 Zyvex Corporation Directional assembly of carbon nanotube strings
US6919395B2 (en) 2002-01-04 2005-07-19 Acushnet Company Golf ball compositions comprising nanoparticulates
JP3453377B2 (ja) * 2002-01-08 2003-10-06 科学技術振興事業団 カーボンナノチューブ・カーボンナノホーン複合体とその製造方法
US7037562B2 (en) * 2002-01-14 2006-05-02 Vascon Llc Angioplasty super balloon fabrication with composite materials
US7091412B2 (en) 2002-03-04 2006-08-15 Nanoset, Llc Magnetically shielded assembly
US7115305B2 (en) 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
US6953001B2 (en) 2002-02-04 2005-10-11 Kazak Composites, Incorporated Hatch or door system for securing and sealing openings in marine vessels
US6828015B2 (en) 2002-02-08 2004-12-07 Mitsubishi Gas Chemical Company, Inc. Composite containing thin-film particles having carbon skeleton, method of reducing the thin-film particles, and process for the production of the composite
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
US7127294B1 (en) 2002-12-18 2006-10-24 Nanoset Llc Magnetically shielded assembly
AU2003237782A1 (en) 2002-03-04 2003-10-20 William Marsh Rice University Method for separating single-wall carbon nanotubes and compositions thereof
US7235912B2 (en) 2002-03-08 2007-06-26 Chien-Min Sung Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof
US6946382B2 (en) 2002-04-02 2005-09-20 Dow Global Technologies Inc. Process for making air gap containing semiconducting devices and resulting semiconducting device
AU2003230823A1 (en) 2002-04-05 2003-10-27 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Polyimides from 2,3,3',4'-biphenyltetracarboxylic dianhydride and aromatic diamines
US7122710B2 (en) 2002-04-08 2006-10-17 Wiiliam Marsh Rice University Fluorination of polymeric C60
EP1503956A1 (en) * 2002-04-08 2005-02-09 William Marsh Rice University Method for cutting single-wall carbon nanotubes through fluorination
US6879143B2 (en) * 2002-04-16 2005-04-12 Motorola, Inc. Method of selectively aligning and positioning nanometer-scale components using AC fields
JP4736324B2 (ja) 2002-04-22 2011-07-27 コニカミノルタホールディングス株式会社 半導体素子及びその製造方法
US6908261B2 (en) * 2002-05-09 2005-06-21 Forward Ventures, Lp Conductor polymer backfill composition and method of use as a reinforcement material for utility poles
EP1361619A3 (en) * 2002-05-09 2007-08-15 Konica Corporation Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof
CN100341629C (zh) * 2002-05-21 2007-10-10 艾考斯公司 使碳纳米管涂层形成图案的方法和碳纳米管布线
US7122106B2 (en) 2002-05-23 2006-10-17 Battelle Memorial Institute Electrosynthesis of nanofibers and nano-composite films
US6872330B2 (en) * 2002-05-30 2005-03-29 The Regents Of The University Of California Chemical manufacture of nanostructured materials
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
JP3606855B2 (ja) 2002-06-28 2005-01-05 ドン ウン インターナショナル カンパニー リミテッド 炭素ナノ粒子の製造方法
US6852410B2 (en) * 2002-07-01 2005-02-08 Georgia Tech Research Corporation Macroscopic fiber comprising single-wall carbon nanotubes and acrylonitrile-based polymer and process for making the same
US7061749B2 (en) * 2002-07-01 2006-06-13 Georgia Tech Research Corporation Supercapacitor having electrode material comprising single-wall carbon nanotubes and process for making the same
US7098056B2 (en) 2002-08-09 2006-08-29 Nanoink, Inc. Apparatus, materials, and methods for fabrication and catalysis
US7077891B2 (en) 2002-08-13 2006-07-18 Air Products And Chemicals, Inc. Adsorbent sheet material for parallel passage contactors
JP4547852B2 (ja) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
WO2004023527A2 (en) * 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US6749982B2 (en) * 2002-09-27 2004-06-15 Eastman Kodak Company Imaging member with polyester base
US6881492B2 (en) * 2002-09-27 2005-04-19 Eastman Kodak Company Primer composition for polyesters
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
JP4120527B2 (ja) * 2002-10-04 2008-07-16 旭硝子株式会社 テトラフルオロエチレン／エチレン系共重合体組成物
JP4458231B2 (ja) * 2002-10-08 2010-04-28 三菱瓦斯化学株式会社 ポリアミドおよび樹脂組成物
AU2003287618A1 (en) * 2002-11-12 2004-06-03 Nanoink, Inc. Methods and apparatus for ink delivery to nanolithographic probe systems
US7125533B2 (en) 2002-11-15 2006-10-24 William Marsh Rice University Method for functionalizing carbon nanotubes utilizing peroxides
WO2004051776A1 (ja) * 2002-12-02 2004-06-17 Sanyo Electric Co.,Ltd. 固体高分子電解質膜、当該膜を用いた固体高分子型燃料電池、およびその製造方法
US7074887B2 (en) 2002-12-17 2006-07-11 The Regents Of The University Of California Chemical synthesis of chiral conducting polymers
US6841213B2 (en) * 2002-12-27 2005-01-11 Scimed Life Systems, Inc Fiber pattern printing
US7244499B2 (en) * 2003-01-10 2007-07-17 Sanyo Electric Co., Ltd. Bonded structure including a carbon nanotube
US6833201B2 (en) 2003-01-31 2004-12-21 Clemson University Nanostructured-doped compound for use in an EL element
US6822032B2 (en) 2003-02-06 2004-11-23 General Electric Company Impact modified compositions of polyimide and polyamide resins
JP2004288609A (ja) * 2003-03-06 2004-10-14 Mitsubishi Electric Corp 電子放出源、その製造方法、及び画像表示装置
US7075105B2 (en) 2003-03-19 2006-07-11 Masataka Kano Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device
US6858528B2 (en) * 2003-03-20 2005-02-22 Intel Corporation Composite sacrificial material
JP4619624B2 (ja) * 2003-03-31 2011-01-26 旭硝子株式会社 積層ホース
US20040198892A1 (en) 2003-04-01 2004-10-07 Cabot Microelectronics Corporation Electron source and method for making same
US6825060B1 (en) * 2003-04-02 2004-11-30 Advanced Micro Devices, Inc. Photosensitive polymeric memory elements
US7082683B2 (en) 2003-04-24 2006-08-01 Korea Institute Of Machinery & Materials Method for attaching rod-shaped nano structure to probe holder
JP3999746B2 (ja) * 2003-05-19 2007-10-31 ローム アンド ハース カンパニー ポリマーナノ粒子の高固形分調製方法
US6860956B2 (en) * 2003-05-23 2005-03-01 Agency For Science, Technology & Research Methods of creating patterns on substrates and articles of manufacture resulting therefrom
SI2415577T1 (sl) * 2003-06-24 2015-11-30 Aspen Aerogels Inc. Metoda za proizvodnjo listov gela
US7125101B2 (en) 2003-07-30 2006-10-24 Hewlett-Packard Development Company, L.P. Photonically activated fluid ejector apparatus and methods
US7026432B2 (en) * 2003-08-12 2006-04-11 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7083885B2 (en) 2003-09-23 2006-08-01 Eastman Kodak Company Transparent invisible conductive grid
US6995266B2 (en) * 2003-10-03 2006-02-07 General Electric Company Thermally stable anthrapyridone compositions
US7119028B1 (en) 2003-10-29 2006-10-10 The United States Of America As Represented By The Secretary Of The Navy Surface imprinted films with carbon nanotubes
US7122165B2 (en) 2003-11-03 2006-10-17 The Research Foundation Of State University Of New York Sidewall-functionalized carbon nanotubes, and methods for making the same
US7013998B2 (en) * 2003-11-20 2006-03-21 Halliburton Energy Services, Inc. Drill bit having an improved seal and lubrication method using same
US7118652B2 (en) 2003-12-04 2006-10-10 General Motors Corporation Airflow control devices based on active materials
US7059664B2 (en) * 2003-12-04 2006-06-13 General Motors Corporation Airflow control devices based on active materials
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7056849B2 (en) * 2004-01-16 2006-06-06 General Electric Company Nanoscale ordered composites of covalent ceramics for high-temperature structural applications via block-copolymer-assisted assembly and method of making
US7052618B2 (en) * 2004-01-28 2006-05-30 Agilent Technologies, Inc. Nanostructures and methods of making the same
US6927249B1 (en) 2004-02-11 2005-08-09 Lg Chem, Ltd. Heat absorb-release plastic resin composition and molded product thereof
US7086939B2 (en) 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
KR20050096536A (ko) * 2004-03-31 2005-10-06 삼성에스디아이 주식회사 그리드 전극을 갖는 전자 방출 표시장치
US7019391B2 (en) * 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
KR20050104839A (ko) 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출원 제조 방법, 전자 방출원 및 상기 전자방출원을 구비하는 전자 방출 소자
US7029056B2 (en) * 2004-06-09 2006-04-18 General Motors Corporation Closure lockdown assemblies and methods utilizing active materials
US6893895B1 (en) * 2004-07-07 2005-05-17 Advanced Micro Devices, Inc. CuS formation by anodic sulfide passivation of copper surface
US7071259B2 (en) 2004-07-27 2006-07-04 Equistar Chemicals, Lp Functionalized propylene polymer compositions and composites containing same
US7063377B2 (en) * 2004-08-06 2006-06-20 General Motors Corporation Hood lift mechanisms utilizing active materials and methods of use
US7129133B1 (en) 2004-09-13 2006-10-31 Spansion Llc Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
US6998452B1 (en) * 2005-01-14 2006-02-14 The Goodyear Tire & Rubber Company Controlled free radical agent for nanocomposite synthesis
US7413613B2 (en) * 2005-03-28 2008-08-19 Teco Nanotech Co., Ltd Method for activating electron source surface of field emission display

Also Published As

Publication number Publication date
WO2007111748A3 (en) 2008-01-03
JP2009522203A (ja) 2009-06-11
CN101365735A (zh) 2009-02-11
KR101368255B1 (ko) 2014-03-03
TWI449664B (zh) 2014-08-21
WO2007111748A2 (en) 2007-10-04
KR20080086916A (ko) 2008-09-26
US20070262687A1 (en) 2007-11-15
TW200738558A (en) 2007-10-16
US8264137B2 (en) 2012-09-11

Similar Documents

Publication Publication Date Title
CN101365735B (zh) 用于碳纳米管电子发射阴极的固化粘合材料
US8062697B2 (en) Ink jet application for carbon nanotubes
US6190929B1 (en) Methods of forming semiconductor devices and methods of forming field emission displays
CN101427357B (zh) 纳米颗粒的植入
WO2022041518A1 (zh) 柔性压力传感器用导电碳浆及其制备方法和压力传感器
CN101432838B (zh) 场致发射阴极器件和显示器设备及其制造方法
CN103649011B (zh) 陶瓷含硼掺杂浆料及其制备方法
JP2007019069A (ja) ペースト組成物およびそれを用いた太陽電池素子
US20060292297A1 (en) Patterning CNT emitters
TW201243866A (en) Conductive paste and solar cell
JP6447493B2 (ja) バリア層形成用組成物、バリア層付き半導体基板、太陽電池用基板の製造方法及び太陽電池素子の製造方法
EP2892073B1 (en) Field electron emission film, field electron emission element, light emitting element, and method for producing same
US7452735B2 (en) Carbon nanotube deposition with a stencil
JP4360646B2 (ja) バンプの形成方法
CN104868009A (zh) 太阳能电池的制造方法
US8153528B1 (en) Surface characteristics of graphite and graphite foils
CN114999734B (zh) 柔性金属纳米线薄膜及其制备方法
JP2002052333A (ja) 微粒子の被覆方法、被覆微粒子、異方性導電接着剤、異方性導電接合膜及び導電接続構造体
US20070284989A1 (en) Composition for preparing electron emission source, electron emitter prepared using the composition, electron emission device including the electron emitter, and method of preparing the electron emitter
KR100932976B1 (ko) 평판표시소자의 전자 방출원 형성용 슬러리 조성물 및이를 이용한 전극 형성 방법
TWI296814B (zh)
CN100358074C (zh) 高分子薄膜场发射阴极材料及其制备方法与装置
KR100965545B1 (ko) 평판 표시 소자의 전자 방출원 형성용 조성물 및 이로부터형성된 전자 방출원
CN113205902A (zh) 银纳米线导电墨水及其透明导电薄膜的制备方法
TW201117647A (en) Insulative paste and method for manufacturing organic light emitting device using the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: APPLIED NANOTECH HOLDINGS INC.

Effective date: 20110303

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: TEXAS, USA TO: SUWON CITY, GYEONGGI-DO, SOUTH KOREA

TA01 Transfer of patent application right

Effective date of registration: 20110303

Address after: Gyeonggi Do Korea Suwon

Applicant after: Samsung Electronics Co., Ltd.

Address before: texas

Applicant before: Applied Nanotech Holdings Inc.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130123

Termination date: 20161220