CN103649011B - 陶瓷含硼掺杂浆料及其制备方法 - Google Patents
陶瓷含硼掺杂浆料及其制备方法 Download PDFInfo
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- CN103649011B CN103649011B CN201280020996.1A CN201280020996A CN103649011B CN 103649011 B CN103649011 B CN 103649011B CN 201280020996 A CN201280020996 A CN 201280020996A CN 103649011 B CN103649011 B CN 103649011B
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- boron
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- pottery
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- boron doped
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- 229910052796 boron Inorganic materials 0.000 title claims abstract description 85
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 239000002002 slurry Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title description 5
- 238000007613 slurry method Methods 0.000 title description 3
- 239000002904 solvent Substances 0.000 claims abstract description 30
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 27
- 239000011230 binding agent Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 239000008187 granular material Substances 0.000 claims abstract description 10
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000001856 Ethyl cellulose Substances 0.000 claims description 9
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 9
- 229920001249 ethyl cellulose Polymers 0.000 claims description 9
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 2
- 229910004369 ThO2 Inorganic materials 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000421 cerium(III) oxide Inorganic materials 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 2
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 claims description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 2
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 2
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 claims description 2
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium (III) oxide Inorganic materials [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 claims description 2
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052580 B4C Inorganic materials 0.000 claims 2
- 229910052582 BN Inorganic materials 0.000 claims 2
- 229910052810 boron oxide Inorganic materials 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 2
- 229910016697 EuO Inorganic materials 0.000 claims 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 68
- 238000009792 diffusion process Methods 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 21
- 239000000203 mixture Substances 0.000 description 20
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- 229910019213 POCl3 Inorganic materials 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 229910004205 SiNX Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 239000012530 fluid Substances 0.000 description 11
- 238000002161 passivation Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 8
- 229910010293 ceramic material Inorganic materials 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000006722 reduction reaction Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- -1 MSiOx Inorganic materials 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
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- 238000007639 printing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
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- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
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- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
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- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- C04B35/62625—Wet mixtures
- C04B35/6264—Mixing media, e.g. organic solvents
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/636—Polysaccharides or derivatives thereof
- C04B35/6365—Cellulose or derivatives thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
本发明公开了陶瓷含硼掺杂剂浆料。所述陶瓷含硼掺杂剂浆料还包括一组溶剂、分散于所述一组溶剂中的一组陶瓷颗粒、分散于所述一组溶剂中的一组硼化合物颗粒、溶解于所述一组溶剂中的一组粘合剂分子。其中，所述陶瓷含硼掺杂剂浆料具有介于约0.01和约1之间的剪切致稀幂律指数n。
Description
公开领域
本公开一般涉及p-n结，并且具体地涉及陶瓷含硼掺杂浆料及其制备方法。
背景技术
太阳能电池将太阳能直接转化为直流电能。太阳能电池通常被配置为光电二极管，其允许光透入金属触点附近，使得生成的载流子（电子或空穴（不含电子））可作为电流提取。并且和大多数其它二极管一样，光电二极管通过组合p型和n型半导体以形成结而形成。
电场（或内置电位）内的p型侧上的电子然后可被吸引到n型区域（通常掺杂有磷）并受到p型区域（通常掺杂有硼）排斥，而电场内结的n型侧上的空穴然后可被吸引到p型区域并受到n型区域排斥。通常，n型区域和/或p型区域可各自分别包含不同水平的相对掺杂剂浓度，通常显示为n-、n+、n++、p-、p+、p++等。内置电位以及因此电场的量级通常取决于两个相邻层之间的掺杂水平。
现在参见图1，其示出了常规太阳能电池的简图。一般来讲，中度掺杂的扩散发射极区域108通常形成于相对轻和反向掺杂的扩散区域吸收极区域110之上。此外，在基板正面上沉积氮化硅(SiNx)层104之前，在硅基板110上形成并焙烧入一组金属触点，其包括前金属触点102和背表面场(BSF)/背金属触点116。
在通常的构型中，轻n型掺杂磷的扩散区域108（通常称为发射极或场）通过将掺杂硼的基板曝露于POCl3（三氯氧化磷）环境中以在晶片的表面上形成磷硅酸盐玻璃(PSG)而形成。通过硅还原五氧化二磷而将磷释放到基板本体中并且掺杂它。反应通常为：
4POCl3(g)+3O2(g)→2P2O5(l)+6Cl2(g)[方程1A]
2P2O5(l)+5Si(s)→5SiO2(s)+4P(s)[方程1B]
Si+O2→SiO2[方程2]
POCl3环境通常包括氮气(N2气)，其流动通过充满液态POCl3的鼓泡器，并且活性氧气(活性O2气)被配置成与气化的POCl3反应以形成沉积(加工)气体。一般来讲，P2O5至游离磷的还原与硅原子的可获得性成正比。
在扩散过程期间，基板以每个狭槽两块基板的任一背对背构型加载，或者以每个狭槽一块晶片的构型加载，使得所有暴露于加热炉环境中的基板表面掺杂有磷。
在将氮化硅(SiNx)层104沉积在基板的正面之前，可通过使掺杂的硅基板暴露于蚀刻剂例如氢氟酸(HF)中来去除在POCl3沉积过程期间形成在基板表面上的残余表面玻璃(PSG)。然后包括前金属触点102和背表面场(BSF)/背金属触点116的一组金属触点按顺序形成在硅基板110上并随后焙烧到硅基板110中。
前金属触点102通常通过沉积Ag（银）浆料而形成，该浆料包含银粉（约70重量%至约80重量%（重量百分比）、硼硅酸铅玻璃（玻璃料）PbO-B2O3-SiO2（约1重量%至约10重量%）和有机组分（约15重量%至约30重量%）。沉积之后，在低温下干燥浆料以去除有机溶剂，并且在高温下焙烧以形成导电性金属层以及启用硅金属触点。
BSF/背金属触点116通常由铝形成（在p型基板的情况下），并且被配置成产生势垒，所述势垒排斥并且因此使少数载流子后表面复合的影响最小化。此外，为了有利于焊接以互连到组件中，银垫片[未示出]通常被施用至BSF/背金属触点116上。
然而，由于多种原因，铝的使用可能仍有问题。由于硅片和铝层之间热膨胀的失配，铝BSF倾向于导致太阳能电池变形，其引起后续生产工艺上的困难，并且由于破损增加而降低产率。铝还是不被晶片吸收的红光的不良反射器，从而降低太阳能电池的效率。此外，铝通常向基板后表面提供亚最佳钝化。
一种解决方案可为用反射性更强的和更好钝化的层替换包层铝，以减少载流子复合并且增加长波长光的吸收。另外，可减小背面金属触点面积以进一步优化载流子复合。
以此构造配置的太阳能电池通常称为PERC（钝化发射极与背面电池），此构造由新南威尔士大学在1989年首次引入[A.W.Blakers等人，AppliedPhysicsLetters,55(1989)1363-1365]。那项研究中制造的装置使用重掺杂的基板以及多个昂贵的加工步骤，这些与高生产量的制造不相容。这种电池构造的其它型式后来作为选择被引入以进一步提高效率。它们中最值得注意的是PERL（钝化发射极和背面局部扩散）[A.Wang等人，J.Appl.Phys.Lett.57,602,(1990)]，PERT（钝化发射极和背面全扩散）[J.Zhao,A.Wang,P.P.Altermatt,M.A.Green,J.P.RakotoniainaandO.Breitenstein,29thIEEEPhotovoltaicSpecialistConference,NewOrleans，第218页，(2002)]，以及PERF（钝化发射极和背面浮动结）电池[P.P.Altermatt等人，J.Appl.Phys.80(6),1996年9月，第3574-3586页]。与初始PERC电池类似，这些构造制造起来较昂贵。自从它们的引入，已进行了诸多尝试来开发工业上可用的方法以制备这些电池。
在一种替代的构型中，在晶片的正面上可使用选择性发射极太阳能电池构造以进一步优化太阳能电池效率。选择性发射极使用对于低复合而优化的第一轻掺杂区域，以及对于低电阻欧姆金属触点而优化的第二重掺杂区域（掺杂剂类型相同）。
现在参见图2，其为示出太阳能电池的简图，所述太阳能电池具有在p-(掺杂硼的)基板210上的背面钝化和减小的背面面积的金属触点，所述基板210具有n+(掺杂磷的)发射极区域220。
此处，一组前金属触点222通过前表面SiNx层219连接至n+发射极区域220以形成欧姆触点。SiNx层219通常被配置成使前表面钝化，以及使太阳能电池顶部表面的光反射最小化。
同样，背金属触点216通过背面表面钝化层214（例如SiNx）与基板210连接，以同样形成欧姆触点。
然而，此构造的太阳能电池转化效率仍然有问题。例如，与微弱掺杂的基底晶片直接接触的金属层的存在将趋于导致高接触电阻（即非欧姆触点）。此外，n+层（POCl3扩散过程的副产物）和一组背金属触点216之间的直接接触也将趋于导致进一步降低装置效率的分结的结。
一种解决方案可为使用掺杂浆料以在n+层212和一组背金属触点216之间形成局部的p+（重掺杂的）区域以使有害分结最小化。然而，由于常规的掺杂剂浆料通常由SiO2基质添加包含化合物的掺杂剂构成，因此使用它们是有问题的(参见美国专利4,104,091和美国专利6,695,903)。
除了有害的自动掺杂（生成挥发性的掺杂剂物质，其掺杂远离目标沉积区域的不需要的表面区域），常规的掺杂浆料通常不能掩盖周围的POCl3（缺少POCl3将使局部区域反掺杂成有害的n型并且因此分结）。
根据前述，期望一种掺杂浆料，所述掺杂浆料对高温氧化过程（例如POCl3扩散过程）是可复原的、能够掩盖周围的POCl3、并且与基于HF的酸洗化学作用相容。
发明内容
在一个实施例中，本发明涉及陶瓷含硼掺杂剂浆料。陶瓷含硼掺杂剂浆料还包括一组溶剂、分散于所述一组溶剂组中的一组陶瓷颗粒、分散于所述一组溶剂组中的一组硼化合物颗粒、和溶解于所述一组溶剂组中的一组粘合剂分子。其中，陶瓷含硼掺杂剂浆料具有介于约0.01和约1之间的剪切致稀幂律指数n。
附图说明
以举例但非限制性的方式，在附图中对本发明进行说明，并且在附图中相似的附图标号表示相似的部件，并且其中：
图1示出了传统的前接触太阳能电池的简图；
图2示出了具有背面钝化和减小的背面面积金属触点的p-(掺杂硼的)基板的太阳能电池的简图，所述基板具有n+(掺杂磷的)发射极区域；
图3A-B示出了不同太阳能电池构型的一组图，其中根据本发明可使用陶瓷含硼掺杂浆料在背面金属电极和基板之间配置有益（非分结）欧姆触点。
根据本发明，图4示出了简化的埃林厄姆图（EllinghamDiagram）；
根据本发明，图5示出了两种含硼掺杂浆料的粘度特征曲线；
根据本发明，图6示出了显示多数载流子型的扩展电阻特征曲线和扩散区域中的浓度的简图；
根据本发明，图7示出了由含硼掺杂浆料产生的在n型基板上的硼掺杂剂扩散的简图；
根据本发明，图8示出了在n型基板上的硼掺杂剂扩散和磷掺杂剂扩散的简图；并且，
根据本发明，图9示出了制备含硼掺杂浆料的简化工艺。
具体实施方式
现将结合如附图所示的本发明的一些优选实施例来详细描述本发明。为了能够全面理解本发明，在以下说明中阐述了许多具体细节。然而对于本领域的技术人员而言将显而易见的是，没有部分或所有这些具体细节也能实践本发明。在其它情况下，为了不给本发明增加不必要的理解难度，未详细示出熟知的工序和/或结构。
如前所述，避免包层铝BSF的太阳能电池的构造可通过与晶片本体的低电阻和低复合接触而提供提高的效率。然而，由于与微弱掺杂的基质晶片直接接触的金属层的存在趋于导致非欧姆触点，此类构型也是有问题的。此外，在形成的n+层（POCl3扩散过程的结果）与所述一组背金属触点之间的直接接触也趋于导致进一步降低装置效率的分结的结。
根据本发明，以有利的方式，可通过金属层和基底晶片之间的p+(重掺杂的)区域用陶瓷含硼掺杂浆料在背面金属电极216和基板210之间形成有益的（非分结）欧姆触点。
与常规掺杂浆料相比，陶瓷含硼掺杂浆料趋于对高温氧化过程（常与掺杂剂扩散过程相关联）是可复原的，趋于掩盖周围的POCl3（缺少POCl3将使局部区域反掺杂成有害的n型并且因此分结），并且与基于HF的酸洗化学作用相容，所述酸洗通常在掺杂剂沉积之后在高温扩散过程之前使用（由于通常不存在氧化硅）。沉积陶瓷含硼掺杂浆料的方法包括但不限于丝网印刷、辊涂、槽冲模涂覆、照相凹版印刷、柔性版转筒印刷、以及喷墨印刷方法等。
现在参见图3A-B，其为示出不同太阳能电池构型的一组图，其中根据本发明可使用陶瓷含硼掺杂浆料在背面金属电极和基板之间配置有益（非分结）欧姆触点。
图3A示出了太阳能电池的构型，其中根据本发明，用陶瓷含硼掺杂浆料形成的p+包层BSF形成与所述一组背面金属触点的非分结欧姆触点。如前所述，基板背面上的p+层的存在将显著减小与n+和p-层直接金属接触的有害影响。
此处，一组前金属触点333通过前表面SiNx层319连接至n+发射极区域330以形成欧姆触点。SiNx层319一般被配置成使前表面钝化，以及使太阳能电池的顶部表面的光反射最小化。在一种替代的构型中，SiNx层319用介电钝化层代替(例如SiOx或SiOx/SiNx多层)。
与图2相比，一组背金属触点316通过背表面钝化层314（例如SiNx）和包层BSF313与基板310连接以形成非分结欧姆触点。在一种替代的构型中，SiNx层314用介电钝化层代替（例如SiOx或SiOx/SiNx多层）。
图3B示出了一种太阳能电池的构型，其中根据本发明，用含硼掺杂浆料形成的p+形成与所述一组背面金属触点的非分结欧姆触点。
此处，一组前金属触点322通过前表面SiNx层319连接至n+发射极区域320以形成欧姆触点。SiNx层319通常被配置成使前表面钝化，以及使太阳能电池顶部表面的光反射最小化。
与图2相比，一组背金属触点316通过背表面钝化层314（例如SiNx）和局部BSF323与基板310连接以形成非分结欧姆触点。此外，在POCl3扩散过程期间产生的n+浮动结有助于减少载流子复合，条件是其不为n+发射极区域320提供分结通道。[C.B.Honsberg,SolarEnergyMaterialsandSolarCells34，1-4期，1994年9月1日，第117-123页]。
如上所述，有多种沉积陶瓷含硼掺杂浆料的方法。具体地，由于丝网印刷通常在太阳能电池制造中用于正面和背面金属浆料沉积，因此其有益于浆料沉积。并且与金属浆料类似，陶瓷含硼掺杂浆料必须被配置为非牛顿流体或剪切致稀流体。
非牛顿流体是指流动性能不通过单一的粘度恒定值或流动阻力进行描述的流体。剪切致稀是指粘度随着剪切速率的增加而降低的流体。一般来讲，剪切致稀行为在胶体悬浮液中观察到，其中颗粒与它们的表面基团的弱流体精力和静电相互作用趋于增加非动态力体制中的粘度。添加相对小的剪切力克服了流体静力相互作用，并且因此趋于降低流体的粘度。
因此，浆料的粘度必须在高剪切速率下相对低，从而使其通过丝网模，但是在沉积之前或之后（在低或零剪切速率下）必须相对高，以便分别使其不穿过丝网或者在基板表面上流动。
一般来讲，剪切致稀为流体中颗粒与颗粒间互相作用的结果。颗粒表面与表面基团的功能化增强颗粒间相互作用，从而导致对于相同固体负荷更强的剪切致稀行为。
对于剪切致稀流体，其粘度可通过幂律或奥斯特瓦德流变模型(Ostwaldrheologicalmodel)与剪切速率相关联：
其中
η=粘度；
K=稠度系数；并且
n为幂律指数（或速率指数）。
因此，等式4可通过对两边取对数而重写：
绘制粘度的对数对剪切速率的对数的曲线将得到一条直线，其中斜率为（n-1），其对应于流体剪切速率。一般来讲，对于0<n<1的剪切致稀流体，较小的n值对应于增加的剪切速率。
为与硅基板接触的热稳定性选择的耐熔陶瓷基质可与硼掺杂源组合，以形成陶瓷含硼掺杂浆料。在高温扩散过程期间，硼可允许扩散到基板中，而周围的磷则被陶瓷材料阻隔。
尽管有多种陶瓷材料具有与扩散过程相容的熔点，但较小的子组与硅基板相容，因为一些与硅接触的氧化物材料在升高的温度下可能被还原，将杂质引入晶片。埃林厄姆图在确定哪种材料不会与下面的晶片发生反应中是有用的。
最初开发埃林厄姆图以寻找重要金属矿石的还原的必要条件，对于多种反应，包括不同金属的氧化，该图可显示出吉布斯自由能(ΔG)相对于温度的变化。吉布斯自由能通常为体系做非机械功的能力，并且G量度对其做的非机械功。
方程6示出了当金属氧化物被放置成与硅基板接触时可能发生的还原反应。该反应会导致金属杂质注入晶片，从而导致不佳的装置性能。
MO2+Si→M+SiO2ΔG[方程6]
MO2→M+O2ΔG1[方程7A]
Si+O2→SiO2ΔG2[方程7B]
方程6所示的反应可分为方程7A和7B所示的两个半反应之和。方程7A可重写为方程7C以符合典型形式的氧化反应：
M+O2→MO2-ΔG1[方程7C]
方程6所示的总反应的吉布斯自由能为：ΔG=-ΔG1+ΔG2只有产生正ΔG的金属是可接受的，因为这些反应将不会发生。与该要求相容的金属可由埃林厄姆图确定。
参见图4，根据本发明，示出了简化的埃林厄姆图。对于多种氧化反应，以kJ/mol表示的吉布斯自由能(-ΔG1)的变化沿垂直轴304示出，而反应温度°K沿水平轴302示出。
参见此图，产生比硅的氧化（即在SiO2曲线414下方）更大的在自由能上的减小的氧化物在升高的温度下与硅接触时是热力学稳定的，因为它们产生方程6所述的正ΔG。因此，降低晶片的少数载流子寿命的金属杂质不会被引入晶片的本体中。合适的陶瓷材料包括(TiO2)416、氧化铝(Al2O3)418、氧化镁(MgO)420、和氧化钙(CaO)422、以及它们的组合。
曲线在414上方的材料是不合适的，因为与硅晶片的反应优先，例如氧化铁(406)、三氧化二铬(408)、以及锰氧化物(410)。
除了根据埃林厄姆图选择的合适的陶瓷材料之外，已经通过可供选择的热力学分析确定多种其它的二元金属氧化物并且包括Li2O、BeO、SrO、Sc2O3、Y2O3、La2O3、CeO2、Ce2O3、Pr2O3、Nd2O3、Sm2O3、EuO、Gd2O3、Tb2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3、ThO2、UO2、ZrO2、Ta2O5、SiO2和HfO2。(K.J.Hubbard和D.G.Schlom,ThermodynamicstabilityofbinarymetaloxidesincontactwithSilicon,J.Mater.Reasearch,v11(11),1996)。
附加的陶瓷材料包括但不限于：金属碳化物、MCx、金属氮化物、MNx、金属硅酸盐、MSiOx、SiO2、和C。
至于硼掺杂剂本身，合适的固体掺杂剂源应被配置成使硅基板污染最小化的同时递送足够的掺杂剂。例如，合适的掺杂剂包括氮化硼(BN)、氧化硼(B2O3)、碳化硼(B4C)、任何形态的硅化硼(BxSi)，其中x=2、3、4、6，以及其它形成与硅相容的二元氧化物的金属硼化物，例如TiBx、MgBx、HfBx、GdBx、LaBx、ZrBx、TaBx、CeBx、C以及它们的混合物。附加的硼掺杂剂包括元素硼、硼粉末、掺杂硼的硅粉末、B-C-Si组合物、MOx-B2O3、以及它们的混合物。B-C-Si包括但不限于：Bx>0.9Siy<0.1Cz<0.1。
在一种构型中，陶瓷材料与硼掺杂剂源分散于一组溶剂中，例如醇、醛、酮、羧酸、酯、胺、有机硅氧烷、卤代烃、以及其它烃溶剂。此外，可混合所述一组溶剂以优化物理特性，例如粘度、密度、极性等。
此外，为了优化丝网印刷浆料的粘弹性性能，加入一组称为粘合剂的高分子量(HMW)聚合物分子。所述粘合剂为聚丙烯酸酯、聚缩醛以及它们的衍生物、聚乙烯、纤维素(包括其醚和酯)、以及它们的共聚物。
在一种替代的构型中，陶瓷材料的颗粒表面可用配体或封端剂处理以分散于一组溶剂中并且优化剪切致稀行为。一般来讲，封端剂或配体为与多原子分子实体的“中心原子”相结合的一组原子或原子团。为下方表面不具有的一些性质或功能选择封端剂，所述封端剂可附接至所述下方表面。
参见图5，根据本发明，示出了两种含硼掺杂浆料的粘度特征曲线。
两组含硼掺杂浆料通过将含硼颗粒与金属氧化物颗粒的混合物分散于乙基纤维素粘合剂1.5重量%和75.5重量%萜品醇溶剂的溶液中而制备。
水平轴502上示出以RPM为单位的剪切速率的对数，同时垂直轴504上示出在25℃下以厘泊(cP)为单位的相应粘度（如布氏粘度计测量的）的对数。
曲线506由在乙基纤维素粘合剂1.5重量%和81.5重量%萜品醇溶剂的溶液中的5重量%硅化硼与12重量%氧化铝粉末的混合物构成。粘度曲线的形状与方程5拟合，-0.687的斜率对应于0.313的n。如前所述，斜率等于n-1。
曲线508由在乙基纤维素粘合剂1.5重量%和75.5重量%萜品醇溶剂的溶液中的5重量%碳化硼与18重量%二氧化钛粉末的混合物构成。粘度曲线的形状与方程5拟合，-0.6561的斜率对应于0.3439的n。
粘度曲线的形状与方程5拟合示出对于两种配方，幂律指数介于n=0.3和n=0.35之间表明在施加剪切力时流体中的高度剪切致稀，使其与丝网印刷相容。一般来讲，根据以上方程5，优选介于约0.01和约1.0之间的n，更优选介于约0.2和约0.8之间的n，并且最优选介于约0.325的n。
现在参见图6，根据本发明，其为示出多数载流子型的扩展电阻特征曲线和扩散区域浓度的简图。垂直轴604上为以cm-3为单位的载流子浓度，水平轴602上为从n型(掺杂磷的）基板表面测量的深度。
在将含硼掺杂浆料沉积在之前用HF溶液清洗的n型基板上，所述含硼掺杂浆料由在乙基纤维素粘合剂1.5重量%和75.5重量%萜品醇溶剂的溶液中的5重量%碳化硼与18重量%二氧化钛粉末的混合物构成。
印刷之后，晶片在70℃下的箱式烘炉中干燥30分钟，以在含氮的环境中去除溶剂。
接下来，将n型基板在约室温下暴露于约6:1的HF/HCl混合物中并持续约2分钟，以减少表面污染。
接下来，将n型基板置于扩散加热炉中并且在N2环境中在约900℃下加热约60分钟，以使p型掺杂剂扩散到n型基板中，所述n型基板随后倾斜以生成扩散电阻特征曲线。
横跨两个碳化钨探针尖端施加约5mV的偏压，所述探针尖端在掺杂的n型基板上分隔约20um。在沿斜面的每次测量之间，探针沿着斜面预定距离被提升并转位。
如图6所示，作为扩散过程的结果，硼掺杂剂从印刷的陶瓷含硼掺杂浆料扩散到n型硅晶片中，从而导致大约0.3微米的p-n结深度，此深度对形成与硅太阳能电池的适当接触是可接受的。基板表面处的电活性硼原子的峰值浓度为大约2*1020(1/cm3)，与在扩散温度下硅中硼的固体溶解度相匹配。
现在参见图7，根据本发明，其为示出两种陶瓷含硼掺杂浆料所产生的在n型基板上的硼掺杂剂扩散的简图。垂直轴702表明所测量的以欧姆/平方为单位的薄片电阻率，其测量沉积的陶瓷含硼掺杂浆料下方的基板面积以及场面积（即未印刷的含硼掺杂浆料的面积）。
沉积在n型基板714上的第一陶瓷含硼掺杂浆料706（对应于图5中曲线506），由在乙基纤维素粘合剂1.5重量%和81.5重量%萜品醇溶剂的溶液中的5重量%硅化硼与12重量%氧化铝粉末的混合物构成。
沉积在n型基板716上的第二陶瓷含硼掺杂浆料710（对应于图5中曲线508），由在乙基纤维素粘合剂1.5重量%和75.5重量%萜品醇溶剂的溶液中的5重量%碳化硼与18重量%二氧化钛粉末的混合物构成。
将每种陶瓷含硼掺杂浆料沉积到之前用HF溶液清洗的n型硅基板上。沉积之后，将基板在70℃下的箱式烘炉中干燥30分钟，以去除溶剂。然后将基本浸没在稀释的含水HF:HCl混合物中以减少表面污染。在去离子水冲洗并干燥之后，将基板在热壁扩散管中、在惰性环境下于900℃下加热一小时。
陶瓷含硼掺杂浆料下面的且在未印刷的场面积中的掺杂然后使用薄层电阻四探针测量来测量。
参见基板714，陶瓷含硼掺杂浆料下面的区域基本上为p型，其具有介于约60欧姆/平方和约80欧姆/平方之间的电阻率，平均为约70欧姆/平方。场区域708基本上为n型，其具有高得多的介于约100欧姆/平方和约275欧姆/平方之间的电阻率，平均为约180欧姆/平方，对应于n型晶片的本体。
参见基板716，陶瓷含硼掺杂浆料基本上为p型，具有介于约70欧姆/平方和约90欧姆/平方之间的电阻率，平均约80欧姆/平方。场区域708下面的区域基本上为n型，具有高很多的介于约125欧姆/平方和约375欧姆/平方之间的电阻率，平均约225欧姆/平方，对应于n型晶片的本体。
因此，表明陶瓷含硼掺杂浆料反掺杂具有硼（p型）掺杂剂的n型基板。
现在参见图8，根据本发明，其为示出在n型基板上同步的硼掺杂剂扩散（含硼掺杂浆料产生的）和磷掺杂剂扩散（POCl3工艺产生的）的简图。
垂直轴802示出了所测量的以欧姆/平方为单位的薄片电阻率，其测量沉积的含硼掺杂浆料之下的基板面积以及场面积（即无含硼掺杂浆料的面积）。
沉积在n型基板814上的第一含硼浆料806（对应于图5中曲线506）由在乙基纤维素粘合剂1.5重量%和81.5重量%萜品醇溶剂的溶液中的5重量%硅化硼与12重量%氧化铝粉末的混合物构成。
沉积在n型基板816上的第二含硼浆料810（对应于图5中曲线508），由在乙基纤维素粘合剂1.5重量%和75.5重量%萜品醇溶剂溶液中的5重量%碳化硼与18重量%二氧化钛粉末的混合物构成。
每种含硼浆料被丝网印刷至之前用HF溶液清洗的n型硅基板上。沉积之后，基板在70℃下的箱式烘炉中干燥30分钟，以去除溶剂。然后将基板浸没在稀释的含水HF:HCl混合物中以减少表面污染。
用去离子水冲洗并干燥之后，基板在热壁扩散管中、惰性环境下于900℃下加热一小时，然后在约850℃的温度下，在扩散炉中暴露于POCl3、N2、和O2气氛中的磷(n型)掺杂剂源约60分钟。基板表面上的残余PSG玻璃层随后通过5分钟BOE清洗步骤来去除。
含硼浆料印刷的区域下面的且在未得到浆料对POCl3暴露保护的场面积中的掺杂然后使用薄层电阻四探针测量来测量。多数载流子类型使用热探针测量来确定。
参见基板814和816，尽管基板暴露于POCl3，含硼掺杂浆料下面的区域仍基本上为p型，其具有介于约70欧姆/平方和约90欧姆/平方之间的电阻率，平均为80欧姆/平方。场808下面的区域基本上为n-型，其具有介于约25欧姆/平方和约35欧姆/平方之间的较低电阻率（由于POCl3扩散过程），平均为约30欧姆/平方。因此，表明含硼浆料即反掺杂n型基板，又阻隔在POCl3扩散过程期间产生的环境中的磷。
现在参见图9，根据本发明，其示出制备含硼掺杂浆料的简化示例工艺。在902步骤处，将含硼颗粒与任选的分散剂和第一组溶剂组合成第一混合物。在904步骤处，将陶瓷颗粒与第二组溶剂组合成第二混合物。在906步骤处，将粘合剂与第三组溶剂组合成第三混合物。最后在908处，将第一混合物、第二混合物和第三混合物组合，然后混合并研磨。
可在不存在本文未具体公开的一种或多种任何元件或者一项或多项限制的情况下，适当地实施本文示例性描述的发明。因此，例如术语“包括”、“包含”、“含有”等可被广义地理解并且不受限制。此外，本文所用的术语和表述已用于术语的描述而并不限制，使用此类术语和表述并无意排除所示和所述的特征或其部分的任何等同形式，但已认识到在受权利要求书保护的本发明的范围内各种改变是可能的。
因此，应当理解，虽然已通过优选实施例和任选特征对本发明进行了具体描述，但本领域的技术人员可借助于本文所公开的本发明的改变、改善和变型，并且应当理解此类改变、改善和变型被认为处于本发明的范围内。此处提供的材料、方法和实例代表优选的实施例，它们是示例性的，并不旨在限制本发明的范围。
如本领域内的技术人员所理解的那样，就任何和所有目的而言，尤其是从提供书面描述来讲，本文公开的所有范围还包含任何以及所有可能的子范围以及它们的子范围的组合。任何列出的范围均可容易地被理解为充分描述和能够划分为至少相等的两份、三份、四份、五份、十份等的相同范围。作为非限制性例子，本文所述的每个范围均可容易地划分为下面三分之一、中间三分之一、以及上面三分之一等。如本领域内的技术人员也将理解的那样，“至多”、“至少”、“大于”、“小于”等之类的所有语言均包括所述的数值，并且是指可随后划分为如上所述子范围的范围。此外，术语“掺杂剂或掺杂的”和“反向掺杂剂或反向掺杂的”是指一组类型相反的掺杂剂。即，如果掺杂剂为p型，则反向掺杂剂为n型。此外，除非另外指明，掺杂剂类型可互换。此外，硅基板可为单晶或多晶。
所有出版物、专利申请、公布的专利以及本说明书中提及的其它文献均以引用方式并入本文，如同已具体并单独地指示各个单独的出版物、专利申请、公布的专利或其它文献的全文以引用方式并入本文。如果以引用方式并入本文的文字中包含的定义与本公开中的定义矛盾，则将所引用内容中的定义排除在外。
就本公开的目的而言并且除非另外指明，“一个”或“一种”是指一个或多个/一种或多种。本文所引用的所有专利、专利申请、参考文献和出版物均全文以引用方式并入，如同将它们单独地以引用方式并入一样。此外，词汇“组”是指一个或多个项目或对象的集合。
本发明的优点包括掺杂浆料，所述掺杂浆料对高温氧化过程（例如POCl3扩散过程）是可复原的，并且能够掩盖周围的POCl3，并且与基于HF的酸洗化学作用相容。
虽然已公开了示例性实施例和最佳模式，但在保留以下权利要求书所限定的本发明的主题和实质范围内的同时，可对公开的实施例作出改变和变型。
Claims (11)
1.陶瓷含硼掺杂剂浆料，包含：
一组溶剂；
分散于所述一组溶剂中的一组陶瓷颗粒，所述陶瓷颗粒包括以下中的至少一种：TiO2、Al2O3、MgO、CaO、Li2O、BeO、SrO、Sc2O3、Y2O3、La2O3、CeO2、Ce2O3、Pr2O3、Nd2O3、Sm2O3、EuO、Gd2O3、Tb2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3、ThO2、UO2、ZrO2、Ta2O5、C和HfO2；
分散于所述一组溶剂中的一组颗粒，所述一组颗粒选自元素硼和硼化合物；
溶解于所述一组溶剂中的一组粘合剂分子；
其中所述陶瓷含硼掺杂剂浆料具有介于0.01和1之间的剪切致稀幂律指数n。
2.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述剪切致稀幂律指数n介于0.1和0.8之间。
3.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述一组陶瓷颗粒介于3重量％和50重量％之间。
4.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述一组陶瓷颗粒介于5重量％和20重量％之间。
5.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述陶瓷颗粒包括以下中的至少一种：TiO2、Al2O3、ZrO2、Ta2O5和C。
6.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中一组硼化合物颗粒介于1重量％和20重量％之间。
7.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中一组硼化合物颗粒介于3重量％和10重量％之间。
8.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述硼化合物包括以下中的至少一种：氮化硼、氧化硼、碳化硼、以及任何形态的硅化硼BxSi，其中x＝2、3、4、6。
9.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中一组硼化合物颗粒包括以下中的至少一种：氮化硼、氧化硼、碳化硼、TiBx、MgBx、HfBx、GdBx、ZrBx、TaBx、CeBx和LaBx。
10.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述一组粘合剂分子介于0.5重量％和7重量％之间。
11.根据权利要求1所述的陶瓷含硼掺杂剂浆料，其中所述一组粘合剂分子包括乙基纤维素。
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| CN104261822B (zh) * | 2014-09-19 | 2015-11-25 | 中南大学 | 一种氧化锆复合陶瓷及其制备方法 |
| CN104934501B (zh) * | 2015-05-30 | 2017-03-22 | 浙江理工大学 | 一种基于Sm2O3/n‑Si异质结构的紫外光电器件的制备方法 |
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| CN105913896B (zh) * | 2016-06-29 | 2017-12-26 | 东莞珂洛赫慕电子材料科技有限公司 | 一种低温固化电极浆料的制备方法 |
| CN108063179B (zh) * | 2017-12-20 | 2019-05-31 | 清华大学 | 一种纳米晶多孔块体硅热电材料及其制备方法 |
| CN109860032A (zh) * | 2019-03-07 | 2019-06-07 | 常州时创能源科技有限公司 | 含硼掺杂剂浆料及其应用 |
| CN111490128A (zh) * | 2019-10-22 | 2020-08-04 | 国家电投集团西安太阳能电力有限公司 | 一种n-pert双面电池氧化硅/氮化硅叠层膜的制备方法 |
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