CN111490128A - 一种n-pert双面电池氧化硅/氮化硅叠层膜的制备方法 - Google Patents
一种n-pert双面电池氧化硅/氮化硅叠层膜的制备方法 Download PDFInfo
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Abstract
本发明的目的在于公开一种N‑PERT双面电池氧化硅/氮化硅叠层膜的制备方法，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结步骤；所述氧化硅/氮化硅叠层膜是由折射率n1和厚度x1的氧化硅薄膜与折射率n2和厚度x2的氮化硅薄膜周期性排列形成并形成光子晶体；与现有技术相比，通过PECVD方法沉积氧化硅/氮化硅叠层膜的叠层结构，调节氧化硅膜和氮化硅薄膜的折射率和厚度改变光子晶体的光子带隙，可以增强入射光与电池的作用时间，增强电池的光吸收能力，提高电池的光利用率，从而使光电转换效率得到提升，实现本发明的目的。
Description
技术领域
本发明涉及一种太阳能电池叠层膜的制备方法，特别涉及一种N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法。
背景技术
随着传统化石能源(煤、石油、天然气)的逐渐开采和使用，环境污染和能源危机问题越来越严重，太阳能由于储量丰富、安全、清洁、价格低廉等优点受到关注和广泛研究。近年来，光伏太阳能电池成本不断降低，成为取代火力发电的最佳候选者之一。
N-PERT电池凭借高的体少子寿命、低光致衰减和大的效率提升空间等优势成为取代常规P型单晶电池的最有发展潜力的电池。通常在常规P型电池的正面沉积氮化硅薄膜起到减反射和钝化的效果。一方面，氮化硅膜层中的氢原子在烧结过程中扩散到SiOx/Si的界面，饱和界面处的悬挂键，极大地减少了界面态的缺陷密度，减少光生载流子的复合；此外，氮化硅膜层内含有大量的固定正电荷，可以很好地抑制正电荷向表面扩散，从而通过场钝化效应降低复合几率。
N-PERT的正背面钝化对减少光生载流子的复合，进而提高电池效率具有重要意义。目前N-PERT电池的发射极钝化膜层由二氧化硅、氧化铝、氮化硅叠层膜等三层膜组成，而目前发射极的钝化水平在提升效率方面还具有很大的空间。
光子晶体是一种介电常数随空间周期性变化的具有光子带隙的结构，对光具有一定的调控作用。当组成光子晶体的两种介质的折射率具有较大的差异时，这种结构会对入射光产生强烈的散射作用；同时带隙边缘光的群速度也会减慢，从而增加光与物质的作用时间，提高了光吸收能力。
因此，本发明提出一种新型N-PERT电池氧化硅/氮化硅叠层钝化膜。与单独的氮化硅叠层膜相比，氧化硅/氮化硅叠层膜不仅具有氢钝化和场钝化的作用，还能有效增强电池的光吸收能力。
因此，特别需要一种N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，以解决上述现有存在的问题。
发明内容
本发明的目的在于提供一种N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，针对现有技术的不足，不仅具有氢钝化和场钝化的作用，还能有效增强电池的光吸收能力。
本发明所解决的技术问题可以采用以下技术方案来实现：
一种N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，其特征在于，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结步骤；所述氧化硅/氮化硅叠层膜是由折射率n1和厚度x1的氧化硅薄膜与折射率n2和厚度x2的氮化硅薄膜周期性排列形成并形成光子晶体。
在本发明的一个实施例中，所述氧化硅薄膜的厚度x1为10-100nm，折射率n1为1.5-1.7。
在本发明的一个实施例中，所述氮化硅薄膜的厚度x2为10-100nm，折射率n2为1.9-2.1。
在本发明的一个实施例中，制备氧化硅薄膜的SiH4流量为300-500sccm， N2O流量为3000-4000sccm，沉积时间为50s-500s。
在本发明的一个实施例中，制备氮化硅薄膜的SiH4流量为600-800sccm， NH3流量为2000-4000sccm，沉积时间为50s-500s。
本发明的N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，与现有技术相比，通过PECVD方法沉积氧化硅/氮化硅叠层膜的叠层结构，调节氧化硅膜和氮化硅薄膜的折射率和厚度改变光子晶体的光子带隙，可以增强入射光与电池的作用时间，增强电池的光吸收能力，提高电池的光利用率，从而使光电转换效率得到提升，实现本发明的目的。
本发明的特点可参阅本案图式及以下较好实施方式的详细说明而获得清楚地了解。
附图说明
图1为本发明的N-PERT双面电池的结构示意图。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体图示，进一步阐述本发明。
根据图1所示，本发明提供的N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，包括对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结步骤；所述氧化硅/氮化硅叠层膜是由折射率n1和厚度x1 的氧化硅薄膜与折射率n2和厚度x2的氮化硅薄膜周期性排列形成并形成光子晶体。
在本实施例中，上述光子晶体的光子带隙中心波长可在380-1100nm之间任意调节，而带隙边缘的光子速度会减小，实现慢光效应。
在本实施例中，所述氧化硅薄膜的厚度x1为10-100nm，折射率n1为 1.5-1.7；制备氧化硅薄膜的SiH4流量为300-500sccm，N2O流量为 3000-4000sccm，沉积时间为50s-500s。
在本实施例中，所述氮化硅薄膜的厚度x2为10-100nm，折射率n2为 1.9-2.1；制备氮化硅薄膜的SiH4流量为600-800sccm，NH3流量为 2000-4000sccm，沉积时间为50s-500s。
本发明提供的N-PERT双面电池氧化硅/氮化硅叠层膜，采用PECVD方法制备，通过改变SiH4、NH3和N2O的流量大小及沉积时间获得不同折射率ni(i＝1,2) 和不同厚度xi(i＝1,2)的SiO2/SiNx膜层，从而调控其光子带隙中心波长的位置，增强光吸收能力。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内，本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (5)
1.一种N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，其特征在于，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结步骤；所述氧化硅/氮化硅叠层膜是由折射率n1和厚度x1的氧化硅薄膜与折射率n2和厚度x2的氮化硅薄膜周期性排列形成并形成光子晶体。
2.如权利要求1所述的N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，其特征在于，所述氧化硅薄膜的厚度x1为10-100nm，折射率n1为1.5-1.7。
3.如权利要求1所述的N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，其特征在于，所述氮化硅薄膜的厚度x2为10-100nm，折射率n2为1.9-2.1。
4.如权利要求1所述的N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，其特征在于，制备氧化硅薄膜的SiH4流量为300-500sccm，N2O流量为3000-4000sccm，沉积时间为50s-500s。
5.如权利要求1所述的N-PERT双面电池氧化硅/氮化硅叠层膜的制备方法，其特征在于，制备氮化硅薄膜的SiH4流量为600-800sccm，NH3流量为2000-4000sccm，沉积时间为50s-500s。
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| US20120280183A1 (en) * | 2011-05-03 | 2012-11-08 | Innovalight, Inc. | Ceramic boron-containing doping paste and methods therefor |
| CN104157714A (zh) * | 2014-07-08 | 2014-11-19 | 苏州大学 | 一种非晶/微晶硅叠层太阳能电池 |
| DE102013209669A1 (de) * | 2013-05-24 | 2014-11-27 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
| CN107425086A (zh) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | 一种离子注入法制作n型pert双面太阳电池的制备工艺 |
| CN110119005A (zh) * | 2019-05-28 | 2019-08-13 | 苏州大学 | 一种宽波段反射镜 |
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| US20120280183A1 (en) * | 2011-05-03 | 2012-11-08 | Innovalight, Inc. | Ceramic boron-containing doping paste and methods therefor |
| DE102013209669A1 (de) * | 2013-05-24 | 2014-11-27 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
| CN104157714A (zh) * | 2014-07-08 | 2014-11-19 | 苏州大学 | 一种非晶/微晶硅叠层太阳能电池 |
| CN107425086A (zh) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | 一种离子注入法制作n型pert双面太阳电池的制备工艺 |
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