CN111640804A - 一种氧化硅/氮化硅叠层膜的n-pert双面电池结构 - Google Patents
一种氧化硅/氮化硅叠层膜的n-pert双面电池结构 Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 41
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
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Abstract
本发明的目的在于公开一种氧化硅/氮化硅叠层膜的N‑PERT双面电池结构，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结制作成电池；氧化硅/氮化硅叠层膜是由折射率n1、厚度x1的氧化硅薄膜和折射率n2、厚度x2的氮化硅薄膜周期性排列形成，周期性排列的氧化硅/氮化硅叠层膜形成光子晶体；与现有技术相比，通过PECVD方法沉积的叠层结构，可以增强入射光与电池的作用时间，提高电池的光利用率，从而使光电转换效率得到提升，散射效应可增强电池的光吸收能力；不需要购买新设备，仅通过改变现有氮化硅薄膜的制备工艺即可实现，实现本发明的目的。
Description
技术领域
本发明涉及一种双面电池结构，特别涉及一种氧化硅/氮化硅叠层膜的N-PERT双面电池结构。
背景技术
随着传统化石能源(煤、石油、天然气)的逐渐开采和使用，环境污染和能源危机问题越来越严重，太阳能由于储量丰富、安全、清洁、价格低廉等优点受到关注和广泛研究。近年来，光伏太阳能电池成本不断降低，成为取代火力发电的最佳候选者之一。
N-PERT电池凭借高的体少子寿命、低光致衰减和大的效率提升空间等优势成为取代常规P型单晶电池的最有发展潜力的电池。通常在常规P型电池的正面沉积氮化硅薄膜起到减反射和钝化的效果。一方面，氮化硅膜层中的氢原子在烧结过程中扩散到S iOx/Si的界面，饱和界面处的悬挂键，极大地减少了界面态的缺陷密度，减少光生载流子的复合；此外，氮化硅膜层内含有大量的固定正电荷，可以很好地抑制正电荷向表面扩散，从而通过场钝化效应降低复合几率。
N-PERT的正背面钝化对减少光生载流子的复合，进而提高电池效率具有重要意义。目前N-PERT电池的发射极钝化膜层由二氧化硅、氧化铝、氮化硅叠层膜等三层膜组成，而目前发射极的钝化水平在提升效率方面还具有很大的空间。
因此，特别需要一种氧化硅/氮化硅叠层膜的N-PERT双面电池结构，以解决上述现有存在的问题。
发明内容
本发明的目的在于提供一种氧化硅/氮化硅叠层膜的N-PERT双面电池结构，针对现有技术的不足，电池正面采用氧化硅/氮化硅叠层膜形式，增强光与电池的作用时间，有效提升了光吸收率，对电流有明显的增益，从而提高电池的转换效率。
本发明所解决的技术问题可以采用以下技术方案来实现：
一种氧化硅/氮化硅叠层膜的N-PERT双面电池结构，其特征在于，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结制作成电池；氧化硅/氮化硅叠层膜是由折射率n1、厚度x1的氧化硅薄膜和折射率n2、厚度x2的氮化硅薄膜周期性排列形成，周期性排列的氧化硅/氮化硅叠层膜形成光子晶体。
在本发明的一个实施例中，所述氧化硅薄膜的厚度x1为10-100nm，折射率n1为1.5-1.7。
在本发明的一个实施例中，所述氮化硅薄膜的厚度x2为10-100nm，折射率n2为1.9-2.1。
在本发明的一个实施例中，制备氧化硅薄膜的Si H4流量为300-500sccm，N2O流量为3000-4000sccm，沉积时间为50-500s。
在本发明的一个实施例中，制备氮化硅薄膜的Si H4流量为600-800sccm，NH3流量为2000-4000sccm，沉积时间为50-500s。
本发明的氧化硅/氮化硅叠层膜的N-PERT双面电池结构，与现有技术相比，通过PECVD方法沉积的叠层结构，可以增强入射光与电池的作用时间，提高电池的光利用率，从而使光电转换效率得到提升，散射效应可增强电池的光吸收能力；不需要购买新设备，仅通过改变现有氮化硅薄膜的制备工艺即可实现，实现本发明的目的。
本发明的特点可参阅本案图式及以下较好实施方式的详细说明而获得清楚地了解。
附图说明
图1为本发明的氧化硅/氮化硅叠层膜的N-PERT双面电池结构的结构示意图。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体图示，进一步阐述本发明。
实施例
如图1所示，本发明的氧化硅/氮化硅叠层膜的N-PERT双面电池结构，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结制作成电池；氧化硅/氮化硅叠层膜是由折射率n1、厚度x1的氧化硅薄膜和折射率n2、厚度x2的氮化硅薄膜周期性排列形成，周期性排列的氧化硅/氮化硅叠层膜形成光子晶体。
光子晶体是一种介电常数随空间周期性变化的具有光子带隙的结构，对光具有一定的调控作用。当组成光子晶体的两种介质的折射率具有较大的差异时，这种结构会对入射光产生强烈的散射作用；同时带隙边缘光的群速度也会减慢，从而增加光与物质的作用时间，提高了光吸收能力。
氧化硅/氮化硅叠层膜：由折射率n1、厚度x1的氧化硅薄膜和折射率n2、厚度x2的氮化硅薄膜周期性排列而成，此周期性排列的氧化硅和氮化硅薄膜形成光子晶体。通过调节氧化硅膜和氮化硅薄膜的折射率和厚度改变光子晶体的光子带隙，从而增强光的吸收，提高电池的光利用率。
在本实施例中，所述氧化硅薄膜的厚度x1为10-100nm，折射率n1为1.5-1.7。
所述氮化硅薄膜的厚度x2为10-100nm，折射率n2为1.9-2.1。
在本实施例中，制备氧化硅薄膜的Si H4流量为300-500sccm，N2O流量为3000-4000sccm，沉积时间为50-500s。
制备氮化硅薄膜的Si H4流量为600-800sccm，NH3流量为2000-4000sccm，沉积时间为50-500s。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内，本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (5)
1.一种氧化硅/氮化硅叠层膜的N-PERT双面电池结构，其特征在于，对硅片依次进行制绒、硼扩散、刻蚀、离子注入磷、RCA清洗、退火、背面沉积氮化硅膜、BOE清洗、正面镀氧化铝、正面沉积氧化硅/氮化硅叠层膜、印刷和烧结制作成电池；氧化硅/氮化硅叠层膜是由折射率n1、厚度x1的氧化硅薄膜和折射率n2、厚度x2的氮化硅薄膜周期性排列形成，周期性排列的氧化硅/氮化硅叠层膜形成光子晶体。
2.如权利要求1所述的氧化硅/氮化硅叠层膜的N-PERT双面电池结构，其特征在于，所述氧化硅薄膜的厚度x1为10-100nm，折射率n1为1.5-1.7。
3.如权利要求1所述的氧化硅/氮化硅叠层膜的N-PERT双面电池结构，其特征在于，所述氮化硅薄膜的厚度x2为10-100nm，折射率n2为1.9-2.1。
4.如权利要求1所述的氧化硅/氮化硅叠层膜的N-PERT双面电池结构，其特征在于，制备氧化硅薄膜的SiH4流量为300-500sccm，N2O流量为3000-4000sccm，沉积时间为50-500s。
5.如权利要求1所述的氧化硅/氮化硅叠层膜的N-PERT双面电池结构，其特征在于，制备氮化硅薄膜的SiH4流量为600-800sccm，NH3流量为2000-4000sccm，沉积时间为50-500s。
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| US20170098720A1 (en) * | 2014-03-18 | 2017-04-06 | Specmat, Inc. | Method, process and fabrication technology for oxide layers |
| CN107425086A (zh) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | 一种离子注入法制作n型pert双面太阳电池的制备工艺 |
| CN110119005A (zh) * | 2019-05-28 | 2019-08-13 | 苏州大学 | 一种宽波段反射镜 |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016535457A (ja) * | 2013-09-13 | 2016-11-10 | イオン ビーム サービス | イオン注入によってドーピングし、外方拡散バリアを堆積することを含む太陽電池の製造方法 |
| US20170098720A1 (en) * | 2014-03-18 | 2017-04-06 | Specmat, Inc. | Method, process and fabrication technology for oxide layers |
| CN104157714A (zh) * | 2014-07-08 | 2014-11-19 | 苏州大学 | 一种非晶/微晶硅叠层太阳能电池 |
| CN107425086A (zh) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | 一种离子注入法制作n型pert双面太阳电池的制备工艺 |
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