CN101359720B - 有机晶体管及有源矩阵基板 - Google Patents

有机晶体管及有源矩阵基板 Download PDF

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Publication number
CN101359720B
CN101359720B CN2008101280748A CN200810128074A CN101359720B CN 101359720 B CN101359720 B CN 101359720B CN 2008101280748 A CN2008101280748 A CN 2008101280748A CN 200810128074 A CN200810128074 A CN 200810128074A CN 101359720 B CN101359720 B CN 101359720B
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China
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aforementioned
gate electrode
wiring portion
electrode
drain electrode
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CN2008101280748A
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English (en)
Chinese (zh)
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CN101359720A (zh
Inventor
青木敬
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E Ink Corp
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008101280748A 2007-07-30 2008-07-29 有机晶体管及有源矩阵基板 Active CN101359720B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007197350A JP5200443B2 (ja) 2007-07-30 2007-07-30 有機トランジスタ及びアクティブマトリックス基板
JP197350/2007 2007-07-30

Publications (2)

Publication Number Publication Date
CN101359720A CN101359720A (zh) 2009-02-04
CN101359720B true CN101359720B (zh) 2012-01-04

Family

ID=40332109

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101280748A Active CN101359720B (zh) 2007-07-30 2008-07-29 有机晶体管及有源矩阵基板

Country Status (3)

Country Link
US (1) US7595505B2 (https=)
JP (1) JP5200443B2 (https=)
CN (1) CN101359720B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002215065A (ja) * 2000-11-02 2002-07-31 Seiko Epson Corp 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器
JP5742099B2 (ja) * 2010-02-19 2015-07-01 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、及び電子機器
CN102280580A (zh) * 2011-07-15 2011-12-14 中国科学院苏州纳米技术与纳米仿生研究所 有机薄膜晶体管及其制备方法
JP2013048680A (ja) * 2011-08-30 2013-03-14 Gc Corp 咬合圧測定器、咬合圧測定システム
JP5875880B2 (ja) * 2012-01-31 2016-03-02 シチズンホールディングス株式会社 有機トランジスタ
JP2014096454A (ja) * 2012-11-08 2014-05-22 Tokyo Electron Ltd 有機半導体素子の製造方法、絶縁膜の形成方法、及び溶液
JP6357663B2 (ja) * 2013-09-06 2018-07-18 株式会社Ｊｏｌｅｄ 表示装置
CN105140293B (zh) * 2015-08-10 2018-03-27 京东方科技集团股份有限公司 薄膜晶体管、goa栅极驱动电路、阵列基板和显示装置
CN105552132B (zh) * 2016-02-04 2018-11-13 京东方科技集团股份有限公司 薄膜晶体管传感器及其制备方法
CN105977380A (zh) * 2016-06-17 2016-09-28 国家纳米科学中心 有机场效应晶体管及制备方法、电子电路
JP6945836B2 (ja) * 2017-03-17 2021-10-06 株式会社ホタルクス 電界効果トランジスタおよび電子装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577913A (zh) * 2003-07-07 2005-02-09 精工爱普生株式会社 有机薄膜晶体管及其制造方法
CN1702877A (zh) * 2003-07-17 2005-11-30 精工爱普生株式会社 薄膜晶体管及其制造方法、电路、显示装置和电子机器
CN1790766A (zh) * 2004-11-05 2006-06-21 精工爱普生株式会社 电子器件、电子器件的制造方法以及电子设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4368007B2 (ja) * 1999-07-30 2009-11-18 カシオ計算機株式会社 薄膜トランジスタパネル
JP2004538618A (ja) * 1999-10-11 2004-12-24 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 集積回路
GB0112563D0 (en) * 2001-05-23 2001-07-18 Koninl Philips Electronics Nv Active plate
KR20040052226A (ko) * 2001-10-11 2004-06-22 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전자 장치 및 전자 장치의 제조 방법
CN1650225A (zh) 2002-04-26 2005-08-03 皇家飞利浦电子股份有限公司 有源矩阵显示装置
GB2388709A (en) * 2002-05-17 2003-11-19 Seiko Epson Corp Circuit fabrication method
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
TWI256732B (en) * 2002-08-30 2006-06-11 Sharp Kk Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus
JP2005084416A (ja) * 2003-09-09 2005-03-31 Sharp Corp アクティブマトリクス基板およびそれを用いた表示装置
KR101186966B1 (ko) * 2004-11-09 2012-10-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 유기 트랜지스터를 제조하기 위한 자체-정렬 공정
KR101097920B1 (ko) * 2004-12-10 2011-12-23 삼성전자주식회사 광 센서와, 이를 구비한 표시 패널 및 표시 장치
JP4686232B2 (ja) 2005-03-30 2011-05-25 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
JP2006294653A (ja) * 2005-04-05 2006-10-26 Canon Inc 有機薄膜トランジスタおよびその製造方法
JP5194468B2 (ja) * 2006-03-07 2013-05-08 コニカミノルタホールディングス株式会社 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
JP2007305802A (ja) * 2006-05-11 2007-11-22 Seiko Epson Corp 半導体装置、電気光学装置、電子機器及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577913A (zh) * 2003-07-07 2005-02-09 精工爱普生株式会社 有机薄膜晶体管及其制造方法
CN1702877A (zh) * 2003-07-17 2005-11-30 精工爱普生株式会社 薄膜晶体管及其制造方法、电路、显示装置和电子机器
CN1790766A (zh) * 2004-11-05 2006-06-21 精工爱普生株式会社 电子器件、电子器件的制造方法以及电子设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2007-129007A 2007.05.24

Also Published As

Publication number Publication date
US20090032810A1 (en) 2009-02-05
US7595505B2 (en) 2009-09-29
JP5200443B2 (ja) 2013-06-05
CN101359720A (zh) 2009-02-04
JP2009033020A (ja) 2009-02-12

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Effective date of registration: 20181102

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Patentee after: E Ink Corp.

Address before: Tokyo, Japan, Japan

Patentee before: Seiko Epson Corp.