CN101358338B - 轴对称和均匀热分布的真空吸附加热器 - Google Patents

轴对称和均匀热分布的真空吸附加热器 Download PDF

Info

Publication number
CN101358338B
CN101358338B CN2008101312151A CN200810131215A CN101358338B CN 101358338 B CN101358338 B CN 101358338B CN 2008101312151 A CN2008101312151 A CN 2008101312151A CN 200810131215 A CN200810131215 A CN 200810131215A CN 101358338 B CN101358338 B CN 101358338B
Authority
CN
China
Prior art keywords
grooves
vacuum
vacuum chuck
support surface
axisymmetrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101312151A
Other languages
English (en)
Chinese (zh)
Other versions
CN101358338A (zh
Inventor
陆思青
巴拉吉·查卓瑟卡兰
保罗·爱德华·吉
尼汀·K·尹格勒
德米特里·鲁博弥尔斯克
原铮
埃利·Y·易
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101358338A publication Critical patent/CN101358338A/zh
Application granted granted Critical
Publication of CN101358338B publication Critical patent/CN101358338B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN2008101312151A 2007-07-30 2008-07-30 轴对称和均匀热分布的真空吸附加热器 Expired - Fee Related CN101358338B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/830,589 2007-07-30
US11/830,589 US20090031955A1 (en) 2007-07-30 2007-07-30 Vacuum chucking heater of axisymmetrical and uniform thermal profile

Publications (2)

Publication Number Publication Date
CN101358338A CN101358338A (zh) 2009-02-04
CN101358338B true CN101358338B (zh) 2012-05-16

Family

ID=40330933

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101312151A Expired - Fee Related CN101358338B (zh) 2007-07-30 2008-07-30 轴对称和均匀热分布的真空吸附加热器

Country Status (6)

Country Link
US (1) US20090031955A1 (https=)
JP (2) JP5798283B2 (https=)
KR (2) KR101062595B1 (https=)
CN (1) CN101358338B (https=)
SG (1) SG149792A1 (https=)
TW (1) TWI491757B (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198567B2 (en) * 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
DE102010055675A1 (de) * 2010-12-22 2012-06-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Haltevorrichtung für Substrate sowie Verfahren zur Beschichtung eines Substrates
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
WO2012118606A2 (en) 2011-03-01 2012-09-07 Applied Materials, Inc. Thin heated substrate support
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
US20120267423A1 (en) * 2011-04-19 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for Thin Die Processing
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
DE202012013639U1 (de) 2011-12-01 2018-12-06 solar-semi GmbH Vorrichtung zum Bearbeiten eines Substrats
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
US9478447B2 (en) * 2012-11-26 2016-10-25 Applied Materials, Inc. Substrate support with wire mesh plasma containment
CN104637854B (zh) * 2013-11-13 2018-12-07 沈阳新松机器人自动化股份有限公司 一种用于吸附硅片的吸盘
CN112053991B (zh) 2014-05-21 2022-04-15 应用材料公司 热处理基座
CN105161449A (zh) * 2014-05-30 2015-12-16 盛美半导体设备（上海）有限公司 晶圆固定装置
KR101477660B1 (ko) * 2014-08-01 2014-12-31 (주)지원에프알에스 탄성링 및 탄성밴드를 이용하여 완충칼럼의 복원력을 향상시킨 기능성 신발물품
JP6394337B2 (ja) * 2014-12-04 2018-09-26 株式会社Sumco 吸着チャック、面取り研磨装置、及び、シリコンウェーハの面取り研磨方法
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
KR102523850B1 (ko) * 2016-07-11 2023-04-21 주식회사 미코세라믹스 척 구조물 및 척 구조물을 갖는 칩 분리 장치
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10468290B2 (en) * 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
JP6829118B2 (ja) * 2017-03-16 2021-02-10 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102339350B1 (ko) * 2017-04-03 2021-12-16 주식회사 미코세라믹스 세라믹 히터
CN111213227B (zh) * 2017-10-19 2023-10-13 瑞士艾发科技 用于处理衬底的方法和设备
US11361981B2 (en) * 2018-05-02 2022-06-14 Applied Materials, Inc. Batch substrate support with warped substrate capability
JP6959201B2 (ja) * 2018-08-29 2021-11-02 日本碍子株式会社 セラミックヒータ
CN109280904A (zh) * 2018-11-27 2019-01-29 中山德华芯片技术有限公司 一种应用于晶格失配结构外延生长的石墨盘
CN111168870A (zh) * 2020-02-27 2020-05-19 石嘴山市新宇兰山电碳有限公司 一种数控车床专用曲面加工真空吸附模具
CN111490002B (zh) * 2020-04-21 2023-06-27 錼创显示科技股份有限公司 载盘结构
US20250116003A1 (en) * 2021-12-23 2025-04-10 Sumitomo Electric Industries, Ltd. Heater
CN115142050B (zh) * 2022-09-05 2022-11-25 拓荆科技(北京)有限公司 真空吸附加热盘及装置
CN115354307B (zh) * 2022-09-23 2023-08-18 拓荆科技股份有限公司 一种真空加热衬底设备
KR102650161B1 (ko) 2023-01-05 2024-03-22 주식회사 미코세라믹스 세라믹 서셉터
US12241929B2 (en) 2023-04-21 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Work press assembly for test handler
CN119361427B (zh) * 2024-09-27 2025-10-24 深圳市鹏新旭技术有限公司 半导体器件及其制备方法和半导体设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534073A (en) * 1992-09-07 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus comprising wafer vacuum chucking device
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
JP2001144197A (ja) * 1999-11-11 2001-05-25 Fujitsu Ltd 半導体装置、半導体装置の製造方法及び試験方法
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US20040016745A1 (en) * 2002-07-29 2004-01-29 Applied Materials, Inc. Method for achieving process uniformity by modifying thermal coupling between heater and substrate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183545A (en) * 1978-07-28 1980-01-15 Advanced Simiconductor Materials/America Rotary vacuum-chuck using no rotary union
JPH01134945A (ja) * 1987-11-19 1989-05-26 Tokyo Electron Ltd ウエハ保持装置
JP2908516B2 (ja) * 1990-05-07 1999-06-21 キヤノン株式会社 真空吸着式ウエハ保持装置
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JPH0722496A (ja) * 1993-06-29 1995-01-24 Nikon Corp 基板の吸着保持装置
US5342068A (en) * 1993-08-26 1994-08-30 Texas Instruments Incorporated Laminar flow vacuum chuck
JPH10116760A (ja) * 1996-10-08 1998-05-06 Nikon Corp 露光装置及び基板保持装置
TW524873B (en) * 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US5989444A (en) * 1998-02-13 1999-11-23 Zywno; Marek Fluid bearings and vacuum chucks and methods for producing same
US6241825B1 (en) * 1999-04-16 2001-06-05 Cutek Research Inc. Compliant wafer chuck
KR100523113B1 (ko) * 2000-06-01 2005-10-19 동경 엘렉트론 주식회사 반도체 처리용의 단일기판식 처리 장치
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
US6413321B1 (en) * 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
KR20030001842A (ko) * 2001-06-28 2003-01-08 삼성전자 주식회사 이디에스 설비에 구비된 프로브 척
JP2004009165A (ja) * 2002-06-04 2004-01-15 Ngk Spark Plug Co Ltd 吸着用チャック
JP2004039978A (ja) * 2002-07-05 2004-02-05 Hirata Corp 基板保持装置
DE10235482B3 (de) * 2002-08-02 2004-01-22 Süss Microtec Lithography Gmbh Vorrichtung zum Fixieren dünner und flexibler Substrate
JP4090313B2 (ja) * 2002-09-11 2008-05-28 大日本スクリーン製造株式会社 基板保持装置および基板処理装置
KR20040103648A (ko) * 2003-05-30 2004-12-09 삼성전자주식회사 반도체 기판지지 척 및 박막 증착 장치
JP2006005095A (ja) * 2004-06-16 2006-01-05 Ngk Insulators Ltd 基板加熱装置とその製造方法
JP2006310697A (ja) * 2005-05-02 2006-11-09 Dainippon Screen Mfg Co Ltd 吸着チャック
KR200405748Y1 (ko) * 2005-10-27 2006-01-11 (주)쎄미시스코 다공질 실리콘을 이용한 이중 구조의 진공 척
JP5019811B2 (ja) * 2006-07-20 2012-09-05 東京エレクトロン株式会社 静電吸着電極の補修方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534073A (en) * 1992-09-07 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus comprising wafer vacuum chucking device
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
JP2001144197A (ja) * 1999-11-11 2001-05-25 Fujitsu Ltd 半導体装置、半導体装置の製造方法及び試験方法
US20040016745A1 (en) * 2002-07-29 2004-01-29 Applied Materials, Inc. Method for achieving process uniformity by modifying thermal coupling between heater and substrate

Also Published As

Publication number Publication date
JP5798283B2 (ja) 2015-10-21
JP2014053645A (ja) 2014-03-20
KR101495513B1 (ko) 2015-03-03
KR101062595B1 (ko) 2011-09-06
CN101358338A (zh) 2009-02-04
JP2009033178A (ja) 2009-02-12
US20090031955A1 (en) 2009-02-05
SG149792A1 (en) 2009-02-27
KR20110068955A (ko) 2011-06-22
TWI491757B (zh) 2015-07-11
KR20090013077A (ko) 2009-02-04
TW200923118A (en) 2009-06-01

Similar Documents

Publication Publication Date Title
CN101358338B (zh) 轴对称和均匀热分布的真空吸附加热器
CN106469666B (zh) 基座及基质加工设备
TWI702685B (zh) 極端均勻加熱基板支撐組件
US6464795B1 (en) Substrate support member for a processing chamber
JP3129419U (ja) 基板の温度を制御する装置
US6464790B1 (en) Substrate support member
CN105870039B (zh) 用于等离子体处理的双区式加热器
TW202501707A (zh) 可運動的邊緣環設計
TWI900579B (zh) 使用多個加熱區及熱孔隙的台座熱分布調校
KR102740388B1 (ko) 공간적 멀티-웨이퍼 프로세싱 툴을 위한 페데스탈 히터
CN113169111A (zh) 具有改良的热耦合以用于热敏感处理的静电吸盘
US11610792B2 (en) Heated substrate support with thermal baffles
JPWO2021127272A5 (https=)
CN117063269A (zh) 在高温沉积序列中操作的低温基座的传导冷却
US20210287929A1 (en) Heater uniformity in substrate supports
US20240304491A1 (en) Ceramic Pedestal Shaft with Heated/Cooled Gas Tube
TWI913938B (zh) 具有基板溫度測量系統的基座加熱器
JP2025181820A (ja) 熱均一性のための方法および装置
TW202543056A (zh) 基材支撐件設備及包含基材支撐件設備之系統
CN116209785A (zh) 通过局部离子增强等离子体(iep)的晶片非均匀性微调
JP2024519841A (ja) 端面不均一性チューニングのための低インピーダンス電流経路
CN120366746A (zh) 用于衬底处理系统的包含蒸气室的基座

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120516