SG149792A1 - Vacuum chucking heater of axisymmetrical and uniform thermal profile - Google Patents

Vacuum chucking heater of axisymmetrical and uniform thermal profile

Info

Publication number
SG149792A1
SG149792A1 SG200805597-2A SG2008055972A SG149792A1 SG 149792 A1 SG149792 A1 SG 149792A1 SG 2008055972 A SG2008055972 A SG 2008055972A SG 149792 A1 SG149792 A1 SG 149792A1
Authority
SG
Singapore
Prior art keywords
axisymmetrical
grooves
thermal profile
uniform thermal
vacuum
Prior art date
Application number
SG200805597-2A
Other languages
English (en)
Inventor
Siqing Lu
Balaji Chandrasekaran
Paul Edward Gee
Nitin K Ingle
Dmitry Lubomirsky
Zheng Yuan
Ellie Y Yieh
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG149792A1 publication Critical patent/SG149792A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
SG200805597-2A 2007-07-30 2008-07-28 Vacuum chucking heater of axisymmetrical and uniform thermal profile SG149792A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/830,589 US20090031955A1 (en) 2007-07-30 2007-07-30 Vacuum chucking heater of axisymmetrical and uniform thermal profile

Publications (1)

Publication Number Publication Date
SG149792A1 true SG149792A1 (en) 2009-02-27

Family

ID=40330933

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805597-2A SG149792A1 (en) 2007-07-30 2008-07-28 Vacuum chucking heater of axisymmetrical and uniform thermal profile

Country Status (6)

Country Link
US (1) US20090031955A1 (https=)
JP (2) JP5798283B2 (https=)
KR (2) KR101062595B1 (https=)
CN (1) CN101358338B (https=)
SG (1) SG149792A1 (https=)
TW (1) TWI491757B (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198567B2 (en) * 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
DE102010055675A1 (de) * 2010-12-22 2012-06-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Haltevorrichtung für Substrate sowie Verfahren zur Beschichtung eines Substrates
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
WO2012118606A2 (en) 2011-03-01 2012-09-07 Applied Materials, Inc. Thin heated substrate support
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
US20120267423A1 (en) * 2011-04-19 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for Thin Die Processing
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
DE202012013639U1 (de) 2011-12-01 2018-12-06 solar-semi GmbH Vorrichtung zum Bearbeiten eines Substrats
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
US9478447B2 (en) * 2012-11-26 2016-10-25 Applied Materials, Inc. Substrate support with wire mesh plasma containment
CN104637854B (zh) * 2013-11-13 2018-12-07 沈阳新松机器人自动化股份有限公司 一种用于吸附硅片的吸盘
CN112053991B (zh) 2014-05-21 2022-04-15 应用材料公司 热处理基座
CN105161449A (zh) * 2014-05-30 2015-12-16 盛美半导体设备（上海）有限公司 晶圆固定装置
KR101477660B1 (ko) * 2014-08-01 2014-12-31 (주)지원에프알에스 탄성링 및 탄성밴드를 이용하여 완충칼럼의 복원력을 향상시킨 기능성 신발물품
JP6394337B2 (ja) * 2014-12-04 2018-09-26 株式会社Sumco 吸着チャック、面取り研磨装置、及び、シリコンウェーハの面取り研磨方法
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
KR102523850B1 (ko) * 2016-07-11 2023-04-21 주식회사 미코세라믹스 척 구조물 및 척 구조물을 갖는 칩 분리 장치
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10468290B2 (en) * 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
JP6829118B2 (ja) * 2017-03-16 2021-02-10 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102339350B1 (ko) * 2017-04-03 2021-12-16 주식회사 미코세라믹스 세라믹 히터
CN111213227B (zh) * 2017-10-19 2023-10-13 瑞士艾发科技 用于处理衬底的方法和设备
US11361981B2 (en) * 2018-05-02 2022-06-14 Applied Materials, Inc. Batch substrate support with warped substrate capability
JP6959201B2 (ja) * 2018-08-29 2021-11-02 日本碍子株式会社 セラミックヒータ
CN109280904A (zh) * 2018-11-27 2019-01-29 中山德华芯片技术有限公司 一种应用于晶格失配结构外延生长的石墨盘
CN111168870A (zh) * 2020-02-27 2020-05-19 石嘴山市新宇兰山电碳有限公司 一种数控车床专用曲面加工真空吸附模具
CN111490002B (zh) * 2020-04-21 2023-06-27 錼创显示科技股份有限公司 载盘结构
US20250116003A1 (en) * 2021-12-23 2025-04-10 Sumitomo Electric Industries, Ltd. Heater
CN115142050B (zh) * 2022-09-05 2022-11-25 拓荆科技(北京)有限公司 真空吸附加热盘及装置
CN115354307B (zh) * 2022-09-23 2023-08-18 拓荆科技股份有限公司 一种真空加热衬底设备
KR102650161B1 (ko) 2023-01-05 2024-03-22 주식회사 미코세라믹스 세라믹 서셉터
US12241929B2 (en) 2023-04-21 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Work press assembly for test handler
CN119361427B (zh) * 2024-09-27 2025-10-24 深圳市鹏新旭技术有限公司 半导体器件及其制备方法和半导体设备

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183545A (en) * 1978-07-28 1980-01-15 Advanced Simiconductor Materials/America Rotary vacuum-chuck using no rotary union
JPH01134945A (ja) * 1987-11-19 1989-05-26 Tokyo Electron Ltd ウエハ保持装置
JP2908516B2 (ja) * 1990-05-07 1999-06-21 キヤノン株式会社 真空吸着式ウエハ保持装置
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JPH0722496A (ja) * 1993-06-29 1995-01-24 Nikon Corp 基板の吸着保持装置
US5342068A (en) * 1993-08-26 1994-08-30 Texas Instruments Incorporated Laminar flow vacuum chuck
JPH10116760A (ja) * 1996-10-08 1998-05-06 Nikon Corp 露光装置及び基板保持装置
TW524873B (en) * 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US5989444A (en) * 1998-02-13 1999-11-23 Zywno; Marek Fluid bearings and vacuum chucks and methods for producing same
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6241825B1 (en) * 1999-04-16 2001-06-05 Cutek Research Inc. Compliant wafer chuck
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
JP2001144197A (ja) * 1999-11-11 2001-05-25 Fujitsu Ltd 半導体装置、半導体装置の製造方法及び試験方法
KR100523113B1 (ko) * 2000-06-01 2005-10-19 동경 엘렉트론 주식회사 반도체 처리용의 단일기판식 처리 장치
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
US6413321B1 (en) * 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
KR20030001842A (ko) * 2001-06-28 2003-01-08 삼성전자 주식회사 이디에스 설비에 구비된 프로브 척
JP2004009165A (ja) * 2002-06-04 2004-01-15 Ngk Spark Plug Co Ltd 吸着用チャック
JP2004039978A (ja) * 2002-07-05 2004-02-05 Hirata Corp 基板保持装置
US20040016745A1 (en) * 2002-07-29 2004-01-29 Applied Materials, Inc. Method for achieving process uniformity by modifying thermal coupling between heater and substrate
DE10235482B3 (de) * 2002-08-02 2004-01-22 Süss Microtec Lithography Gmbh Vorrichtung zum Fixieren dünner und flexibler Substrate
JP4090313B2 (ja) * 2002-09-11 2008-05-28 大日本スクリーン製造株式会社 基板保持装置および基板処理装置
KR20040103648A (ko) * 2003-05-30 2004-12-09 삼성전자주식회사 반도체 기판지지 척 및 박막 증착 장치
JP2006005095A (ja) * 2004-06-16 2006-01-05 Ngk Insulators Ltd 基板加熱装置とその製造方法
JP2006310697A (ja) * 2005-05-02 2006-11-09 Dainippon Screen Mfg Co Ltd 吸着チャック
KR200405748Y1 (ko) * 2005-10-27 2006-01-11 (주)쎄미시스코 다공질 실리콘을 이용한 이중 구조의 진공 척
JP5019811B2 (ja) * 2006-07-20 2012-09-05 東京エレクトロン株式会社 静電吸着電極の補修方法

Also Published As

Publication number Publication date
JP5798283B2 (ja) 2015-10-21
JP2014053645A (ja) 2014-03-20
KR101495513B1 (ko) 2015-03-03
KR101062595B1 (ko) 2011-09-06
CN101358338A (zh) 2009-02-04
JP2009033178A (ja) 2009-02-12
US20090031955A1 (en) 2009-02-05
KR20110068955A (ko) 2011-06-22
CN101358338B (zh) 2012-05-16
TWI491757B (zh) 2015-07-11
KR20090013077A (ko) 2009-02-04
TW200923118A (en) 2009-06-01

Similar Documents

Publication Publication Date Title
SG149792A1 (en) Vacuum chucking heater of axisymmetrical and uniform thermal profile
JP2009033178A5 (https=)
TW200723370A (en) Multi-zone resistive heater
TW200721363A (en) Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit
ZA200908666B (en) Method of activating boron nitride
TWI419227B (zh) 電漿處理裝置
TW200721366A (en) Body for keeping a wafer, method of manufacturing the same and device using the same
WO2002021590A3 (en) Electrostatic chuck with porous regions
TW200504800A (en) Showerhead assembly and apparatus for manufacturing semiconductor device having the same
TW200942973A (en) Substrate processing apparatus, coating apparatus and coating method
WO2011017060A3 (en) Dual temperature heater
WO2008089168A3 (en) Plasma immersion chamber
EP2015343A3 (en) High temperature cathode for plasma etching
MY161332A (en) Chucks for supporting solar cell in hot spot testing
WO2013033315A3 (en) Wafer carrier with thermal features
TW200629457A (en) Wafer holder for wafer prober and wafer prober equipped with the same
SG143241A1 (en) Substrate support and lithographic process
WO2009045844A3 (en) Non contact substrate chuck
WO2007106332A3 (en) Transfer of wafers with edge grip
ATE529544T1 (de) Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht
WO2007126767A3 (en) Chucking system comprising an array of fluid chambers
WO2009158378A3 (en) Dual chamber megasonic cleaner
WO2010129405A3 (en) Nickel-based bonding of semiconductor wafers
WO2008081561A1 (ja) 孔あきサポートプレート
EP1750317A4 (en) Anode support substrate for a solid oxide fuel cell and manufacturing process therefor