CN101299436A - 应用hdp淀积的源-体注入阻挡块的器件结构及制造方法 - Google Patents
应用hdp淀积的源-体注入阻挡块的器件结构及制造方法 Download PDFInfo
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- CN101299436A CN101299436A CNA2008100882637A CN200810088263A CN101299436A CN 101299436 A CN101299436 A CN 101299436A CN A2008100882637 A CNA2008100882637 A CN A2008100882637A CN 200810088263 A CN200810088263 A CN 200810088263A CN 101299436 A CN101299436 A CN 101299436A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/796,985 US8035159B2 (en) | 2007-04-30 | 2007-04-30 | Device structure and manufacturing method using HDP deposited source-body implant block |
US11/796,985 | 2007-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101299436A true CN101299436A (zh) | 2008-11-05 |
CN101299436B CN101299436B (zh) | 2013-03-13 |
Family
ID=39885898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100882637A Active CN101299436B (zh) | 2007-04-30 | 2008-04-29 | 应用hdp淀积的源-体注入阻挡块的器件结构及制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8035159B2 (zh) |
CN (1) | CN101299436B (zh) |
TW (1) | TWI385800B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010142219A1 (zh) * | 2009-06-09 | 2010-12-16 | 上海韦尔半导体股份有限公司 | 沟槽式功率mosfet及其制造方法 |
CN102237279A (zh) * | 2010-03-24 | 2011-11-09 | 万国半导体股份有限公司 | 用三个或四个掩膜制备的氧化物终止沟槽mosfet |
CN102569403A (zh) * | 2012-01-14 | 2012-07-11 | 哈尔滨工程大学 | 分裂栅型沟槽功率mos器件的终端结构及其制造方法 |
CN102637731A (zh) * | 2012-04-26 | 2012-08-15 | 哈尔滨工程大学 | 一种沟槽功率mos器件的终端结构及其制造方法 |
CN102054867B (zh) * | 2009-11-05 | 2013-10-23 | 上海华虹Nec电子有限公司 | 提高功率mos晶体管工作频率的结构及方法 |
US8791002B2 (en) | 2011-11-21 | 2014-07-29 | Panasonic Corporation | Semiconductor device and fabrication method for the same |
CN104701148A (zh) * | 2013-12-04 | 2015-06-10 | 和舰科技(苏州)有限公司 | 分裂栅的制造方法 |
CN111128703A (zh) * | 2019-12-16 | 2020-05-08 | 上海华虹宏力半导体制造有限公司 | Sgt器件的工艺方法 |
CN111180342A (zh) * | 2020-02-18 | 2020-05-19 | 中芯集成电路制造(绍兴)有限公司 | 屏蔽栅场效应晶体管及其形成方法 |
CN113241380A (zh) * | 2016-08-03 | 2021-08-10 | 英飞凌科技奥地利有限公司 | 具有漂移区和背面发射极的半导体装置及制造方法 |
CN115938945A (zh) * | 2022-11-29 | 2023-04-07 | 上海功成半导体科技有限公司 | 屏蔽栅功率器件及其制备方法 |
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US6838722B2 (en) | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US8193580B2 (en) * | 2009-08-14 | 2012-06-05 | Alpha And Omega Semiconductor, Inc. | Shielded gate trench MOSFET device and fabrication |
US8618601B2 (en) * | 2009-08-14 | 2013-12-31 | Alpha And Omega Semiconductor Incorporated | Shielded gate trench MOSFET with increased source-metal contact |
US8236651B2 (en) * | 2009-08-14 | 2012-08-07 | Alpha And Omega Semiconductor Incorporated | Shielded gate trench MOSFET device and fabrication |
US9716156B2 (en) * | 2015-05-02 | 2017-07-25 | Alpha And Omega Semiconductor Incorporated | Device structure and manufacturing method using HDP deposited source-body implant block |
US9024378B2 (en) * | 2013-02-09 | 2015-05-05 | Alpha And Omega Semiconductor Incorporated | Device structure and manufacturing method using HDP deposited source-body implant block |
TW200903806A (en) * | 2007-07-11 | 2009-01-16 | Promos Technologies Inc | Power MOSFET structure and manufacturing method for the same |
US7863685B2 (en) * | 2008-05-28 | 2011-01-04 | Force-Mos Technology Corp. | Trench MOSFET with embedded junction barrier Schottky diode |
WO2011019378A1 (en) * | 2009-08-14 | 2011-02-17 | Alpha And Omega Semiconductor Incorporated | Shielded gate trench mosfet device and fabrication |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) * | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US9306056B2 (en) | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
US8525255B2 (en) * | 2009-11-20 | 2013-09-03 | Force Mos Technology Co., Ltd. | Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination |
CN101777514B (zh) * | 2010-02-03 | 2012-12-05 | 香港商莫斯飞特半导体有限公司 | 一种沟槽型半导体功率器件及其制备方法 |
JP5736394B2 (ja) | 2010-03-02 | 2015-06-17 | ヴィシェイ−シリコニックス | 半導体装置の構造及びその製造方法 |
US8431457B2 (en) | 2010-03-11 | 2013-04-30 | Alpha And Omega Semiconductor Incorporated | Method for fabricating a shielded gate trench MOS with improved source pickup layout |
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US8502302B2 (en) | 2011-05-02 | 2013-08-06 | Alpha And Omega Semiconductor Incorporated | Integrating Schottky diode into power MOSFET |
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US8507978B2 (en) | 2011-06-16 | 2013-08-13 | Alpha And Omega Semiconductor Incorporated | Split-gate structure in trench-based silicon carbide power device |
US8829603B2 (en) | 2011-08-18 | 2014-09-09 | Alpha And Omega Semiconductor Incorporated | Shielded gate trench MOSFET package |
US8802530B2 (en) * | 2012-06-06 | 2014-08-12 | Alpha And Omega Semiconductor Incorporated | MOSFET with improved performance through induced net charge region in thick bottom insulator |
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US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
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JP2006156471A (ja) * | 2004-11-25 | 2006-06-15 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
DE102005008354B4 (de) * | 2005-02-23 | 2007-12-27 | Infineon Technologies Austria Ag | Halbleiterbauteil sowie Verfahren zu dessen Herstellung |
US8115252B2 (en) * | 2005-05-12 | 2012-02-14 | M-Mos Sdn.Bhd | Elimination of gate oxide weak spot in deep trench |
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-
2007
- 2007-04-30 US US11/796,985 patent/US8035159B2/en active Active
-
2008
- 2008-04-29 TW TW097115803A patent/TWI385800B/zh active
- 2008-04-29 CN CN2008100882637A patent/CN101299436B/zh active Active
-
2011
- 2011-10-04 US US13/200,869 patent/US8372708B2/en active Active
Cited By (15)
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WO2010142219A1 (zh) * | 2009-06-09 | 2010-12-16 | 上海韦尔半导体股份有限公司 | 沟槽式功率mosfet及其制造方法 |
CN102054867B (zh) * | 2009-11-05 | 2013-10-23 | 上海华虹Nec电子有限公司 | 提高功率mos晶体管工作频率的结构及方法 |
CN102237279A (zh) * | 2010-03-24 | 2011-11-09 | 万国半导体股份有限公司 | 用三个或四个掩膜制备的氧化物终止沟槽mosfet |
CN102237279B (zh) * | 2010-03-24 | 2014-06-04 | 万国半导体股份有限公司 | 用三个或四个掩膜制备的氧化物终止沟槽mosfet |
US8791002B2 (en) | 2011-11-21 | 2014-07-29 | Panasonic Corporation | Semiconductor device and fabrication method for the same |
CN102569403A (zh) * | 2012-01-14 | 2012-07-11 | 哈尔滨工程大学 | 分裂栅型沟槽功率mos器件的终端结构及其制造方法 |
CN102637731A (zh) * | 2012-04-26 | 2012-08-15 | 哈尔滨工程大学 | 一种沟槽功率mos器件的终端结构及其制造方法 |
CN104701148A (zh) * | 2013-12-04 | 2015-06-10 | 和舰科技(苏州)有限公司 | 分裂栅的制造方法 |
CN104701148B (zh) * | 2013-12-04 | 2017-11-24 | 和舰科技(苏州)有限公司 | 分裂栅的制造方法 |
CN113241380A (zh) * | 2016-08-03 | 2021-08-10 | 英飞凌科技奥地利有限公司 | 具有漂移区和背面发射极的半导体装置及制造方法 |
CN111128703A (zh) * | 2019-12-16 | 2020-05-08 | 上海华虹宏力半导体制造有限公司 | Sgt器件的工艺方法 |
CN111128703B (zh) * | 2019-12-16 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | Sgt器件的工艺方法 |
CN111180342A (zh) * | 2020-02-18 | 2020-05-19 | 中芯集成电路制造(绍兴)有限公司 | 屏蔽栅场效应晶体管及其形成方法 |
CN115938945A (zh) * | 2022-11-29 | 2023-04-07 | 上海功成半导体科技有限公司 | 屏蔽栅功率器件及其制备方法 |
CN115938945B (zh) * | 2022-11-29 | 2024-01-23 | 上海功成半导体科技有限公司 | 屏蔽栅功率器件及其制备方法 |
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TWI385800B (zh) | 2013-02-11 |
US20120018793A1 (en) | 2012-01-26 |
TW200843113A (en) | 2008-11-01 |
CN101299436B (zh) | 2013-03-13 |
US20080265289A1 (en) | 2008-10-30 |
US8372708B2 (en) | 2013-02-12 |
US8035159B2 (en) | 2011-10-11 |
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