CN101292423A - 兰姆波器件 - Google Patents
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- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
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Abstract
本发明提供一种兰姆波器件,其具有:衬底基板(2);压电薄膜(3),其形成在所述衬底基板(2)上,具有从该衬底基板(2)浮起的部分,该浮起的部分具有与衬底基板(2)相对的第一面(3a)和相反一侧的面即第二面(3b)。所述压电薄膜(3)由LiTaO3或LiNbO3构成。所述压电薄膜(3)的c轴处于与相对于所述压电薄膜(3)的第一、第二面的法线大致相同的方向,并且是把c轴作为旋转轴的旋转双晶。利用该兰姆波的器件,能有效抑制不希望的模式引起的乱真的构造。
Description
技术领域
本发明涉及利用在压电薄膜内传播的兰姆波的兰姆波器件,更具体而言,涉及共振子或滤波器中使用的兰姆波器件。
背景技术
以往,提案了利用使用压电效应激励的各种波的器件,并被使用。其中,在弹性体的表面附近集中能量传播的弹性表面波的器件在共振子或滤波器中广泛使用。
另外,在以下的专利文献1中描述与表面波不同,使用在弹性体中传播的兰姆波的器件。兰姆波是体波的一种,是与弹性体的波长相比,当压电体的厚度为同等或其以下时,一边在压电体的两个主面使弹性波反射一边在压电体内传播的称作板波的波的一种。作为板波,除了兰姆波,知道有SH波。根据弹性波元件技术手册(欧姆社,平成3年发行),记载“SV波和纵波(疏密波)在板的两面发生模式变化,复杂地结合,成为称作兰姆波的板波”的意思。
如非专利文献1所述,兰姆波因为在板状的弹性体的两面把弹性波反射,一边在板状的压电体内传播,所以兰姆波具有与表面波不同的性质。在兰姆波中,存在速度分散性,能使用2个表面,存在与使用表面波时相比,具有更大的机电耦合系数K2的可能性。
在非专利文献1中,描述使用由旋转Y-XLiNbO3构成的压电薄膜的兰姆波器件。这里,表示高音速、具有大的机电耦合系数的反对称模式的A1模式激励。
非专利文献1:电子通信学会杂志’85/5Vol.J68-ANo.5第496页~第503页“旋转Y切X传播LiNbO3平板的兰姆波传播特性的分析”
曾经指出在上述的非专利文献1中记载的兰姆波器件中,在压电薄膜上形成IDT电极的构造中,利用兰姆波能提高机电耦合系数的可能性。可是,实际制作非专利文献1中记载的兰姆波器件时,能在高频区域中取得通过频带,但是在通过频带或衰减频带中容易出现不希望的乱真。
发明内容
本发明的目的在于,提供解决上述的以往技术的缺点,提高机电耦合系数,不仅能谋求高频化,还能抑制不希望的乱真的影响的兰姆波器件。
根据本发明的宽阔的局面,提供一种兰姆波器件,其中,具有:衬底基板;压电薄膜,其形成在所述衬底基板上,具有从该衬底基板浮起的部分,该浮起的部分具有与衬底基板相对的第一面以及相反侧的面即第二面;IDT电极,其配置在所述压电薄膜的第一、第二面的至少一方,所述压电薄膜由LiTaO3或LiNbO3构成,所述压电薄膜的c轴,处于与相对于所述压电薄膜的第一、第二面的法线大致相同的方向,该压电薄膜的晶体结构是以c轴为旋转轴的旋转双晶。
在本发明的兰姆波器件的某特定的局面中,其特征在于:所述压电薄膜是LiNbO3,所述IDT电极由Al或以Al为主成分的合金构成,设所述IDT电极的厚度为h,所述压电薄膜的膜厚为d,兰姆波的利用模式的波长为λ时,h和d满足以下I~III的其中一个条件:
I 0.01≤h/d≤0.24并且0.090≤d/λ≤0.107
II 0.01≤h/d≤0.24并且0.133≤d/λ≤0.233
III 0.01≤h/d≤0.24并且0.257≤d/λ≤0.300。
在本发明的兰姆波器件的其他特定的局面中,其特征在于:述压电薄膜是LiTaO3,所述IDT电极由Al或以Al为主成分的合金构成,设所述IDT电极的厚度为h,所述压电薄膜的膜厚为d,兰姆波的利用模式的波长为λ时,h和d满足以下IV~VI的其中一个条件:
IV 0.01≤h/d≤0.26并且0.093≤d/λ≤0.125
V 0.01≤h/d≤0.26并且0.141≤d/λ≤0.240
VI 0.01≤h/d≤0.26并且0.260≤d/λ≤0.300。
在本发明的兰姆波器件的其他特定的局面中,所述IDT电极形成在压电薄膜的第二面上。
此外,在本发明的兰姆波器件的其他特定的局面中,所述IDT电极形成在压电薄膜的第一面上。
(发明的效果)
在本发明的兰姆波器件中,压电薄膜由LiTaO3或LiNbO3构成,压电薄膜的c轴是与对于压电薄膜的第一、第二面的法线大致相同的方向,并且电薄膜的晶体结构是旋转双晶,所以不发生对称模式的基本模式S0或SH模式的基本模式SH0,能抑制基于这些模式的频带外乱真。因此,能提供频率特性优异的兰姆波器件。
因此,根据本发明,能提供中心频率2~10GHz,百分比带宽1~10%的装置。本发明的兰姆波器件并不局限于带通滤波器,也能在共振子等各种仪器中应用。
特别是,在本发明中,压电薄膜是LiNbO3,IDT电极由Al或以Al为主成分的合金构成,h和d满足所述I~III的任意的条件时,能有效抑制通过频带附近的乱真模式的发生,据此,能抑制通过频带内出现的脉动和频带附近的乱真响应。
此外,压电薄膜是LiTaO3,IDT电极由Al或以Al为主成分的合金构成,h和d满足所述IV~VI的任意的条件时,同样能抑制通过频带附近的乱真模式的发生,据此,能有效抑制通过频带内的脉动和频带附近的乱真响应。
IDT电极形成在与压电薄膜的面对衬底基板侧相反侧的面即第二面上时,能容易在设置在衬底基板上的压电薄膜的第二面形成IDT电极,所以能提供兰姆波器件。
IDT电极也可以在压电薄膜的第一主面形成,这时,IDT电极与衬底基板相对,不在外部露出,所以从构成外壳的金属材料产生的金属粉难以附着在IDT电极上。因此,能抑制金属粉等的附着引起的特性不良,并且能提供耐环境特性或耐湿性优异的兰姆波器件。
附图说明
图1是本发明的一个实施例的兰姆波器件的略图的正面剖视图。
图2是表示在ZnO外延膜上形成的LiNbO3薄膜的XRD频谱的图。
图3A是表示实际测量实施例的兰姆波器件的LiNbO3薄膜具有双晶构造时的阻抗的音速引起的变化的结果的图。
图3B是表示通过仿真,求出实施例的兰姆波器件的LiNbO3薄膜具有双晶构造时的阻抗的音速引起的变化的结果的图。
图3C是表示由LiNbO3薄膜为单晶时的仿真求出的阻抗和音速的关系的图。
图4是表示在实施例的兰姆波器件中,在LiNbO3薄膜上用Al构成IDT电极,电极的厚度d相对于波长λ的比d/λ为0.10时的各模式的机电耦合系数K2的h/d引起的变化的图。
图5是表示把h/d固定在0.24,使d/λ在0.08~0.3的范围中变化时的兰姆波的各模式的机电耦合系数K2的变化的图。
图6是表示在实施例的兰姆波器件中,在LiTaO3薄膜上用Al构成IDT电极,电极的厚度d相对于波长λ的比d/λ为0.10时的各模式的机电耦合系数K2的h/d引起的变化的图。
图7是表示在实施例的兰姆波器件中,在LiTaO3薄膜上用Al构成IDT电极,电极的厚度d相对于波长λ的比d/λ为0.26时的各模式的机电耦合系数K2的由h/d引起的变化的图。
图中;1—兰姆波器件;2—衬底基板;3—压电薄膜;3a—第一面;3b—第二面;4—IDT电极。
具体实施方式
以下,参照附图,说明本发明的具体的实施例,本发明变得清楚。
(实验例1)
图1是用于说明本发明的一个实施例的兰姆波器件的模式式正面剖视图。兰姆波器件1具有衬底基板2和形成在衬底基板2上的压电薄膜3。压电薄膜3形成在衬底基板2的上表面2a上,但是压电薄膜3的一部分从衬底基板2的上表面2a浮起。在该浮起的部分,压电薄膜3的第一面3a与衬底基板2的上表面2a隔开间隔而相面对,在与第一面3a相反一侧的面即外侧的面的第二面3b上形成IDT电极4。为了构成所希望的共振子或滤波器而设置IDT电极4。
在本实施例中,衬底基板2由LiNbO3单晶衬底构成。此外,所述压电薄膜3由LiNbO3薄膜构成,该压电薄膜3的c轴是与相对于压电薄膜3的第一、第二面3a、3b的法线大致相同的方向,并且压电薄膜3结晶构造是把c轴作为旋转轴的旋转双晶。
通过说明本实施例的兰姆波器件1的制造方法,更详细地说明所述构造。
首先,在衬底基板2上,通过溅射等一般的成膜方法,以c轴成为垂直于衬底基板2的上表面2a的方向的方式形成作为底层的ZnO外延(エピタキシヤル)膜。
只要以c轴成为垂直于衬底基板2的上表面2a的方向的方式形成垂直方向的外延膜,构成衬底基板2的材料就不局限于所述材料。例如,衬底基板2也可以由LiTaO3单晶或兰宝石等其他压电单晶形成。
按照接着形成的压电薄膜3的浮起的部分的平面形状,把作为所述底层的ZnO外延膜图案化后,使用CVD成膜装置,形成压电薄膜3。压电薄膜3在本实施例中由LiNbO3薄膜形成。另外,也可以代替LiNbO3薄膜,形成LiTaO3薄膜。
所述压电薄膜3,在以上述方式形成的作为底层的ZnO外延膜上形成,所以压电薄膜3的c轴成为垂直于衬底基板2的上表面2a的方向,由LiNbO3薄膜构成的压电薄膜3成为双晶外延膜。
本来,LiNbO3单晶或LiTaO3单晶以c轴为中心,具有3次旋转对称性,形成压电薄膜3后,但是通过XRD进行评价,取得图2所示的结果。即从图2可知,在实际形成的LiNbO3膜的XRD频谱中,确认具有6次旋转对称性。而且,形成的LiNbO3膜是旋转双晶外延膜。
作为底层的ZnO外延膜自身具有6次旋转对称性,所以认为在其上形成的LiNbO3或LiTaO3能取得2个定向方向。只要LiNbO3薄膜或LiTaO3薄膜能变为旋转双晶外延膜,作为底层使用的材料就不局限于ZnO,也可以是Cu或Pt那样的金属的外延膜。
接着,通过Ar离子蚀刻或反应性蚀刻等干工艺,在所述LiNbO3薄膜或LiTaO3薄膜上形成蚀刻孔。然后,使用光刻和成膜法,形成IDT电极4。接着,通过基于酸的蚀刻,除去所述底层的ZnO外延膜,据此,形成图1所示的空隙A。
如上所述,取得本实施例的兰姆波器件1。通过网络分析仪测定兰姆波器件1的LiNbO3薄膜的共振子的阻抗和音速的关系。图3A表示结果。
此外,图3B表示通过基于有限元法的仿真,求出兰姆波器件1的LiNbO3薄膜的阻抗和音速的关系的结果。
此外,图3C是表示通过除了兰姆波器件1的LiNbO3薄膜不具有双晶构造而变更为单晶,其他为同样的比较例的构造的仿真,而求出的阻抗和音速的关系的图。
从图3C可知,LiNbO3薄膜是单晶时,基于SH波的基本模式SH0和波的对称模式的基本模式S0的响应很大地出现,相对于要使用的反对称模式的一次模式式A1,成为大的乱真。而在图3A和图3B中,出现基于反对称模式A1的响应,几乎不出现成为使衰减区恶化的原因的SH波的基本模式SH0、或对称模式的基本模式S0。
即所述压电薄膜3具有双晶构造,所以能有效抑制不希望的乱真。
图3B和图3C的结果是根据有限元法,求出的,这里,采用IDT的波长为λ时,LiNbO3薄膜的厚度为0.155λ,通过Al形成IDT电极4,该厚度为0.03λ,占空比为0.47,关于双晶构造,把压电薄膜部分相对于弹性波传播方向,等分为80个区域,欧拉角(0°、0°、φ0)部分和欧拉角(0°、0°、φ0+180°)部分交替配置的构造,φ0=15°。另外,无论哪个传播方向,对于φ0都取得同样的效果。
另外,图3A~图3C是压电薄膜3为LiNbO3薄膜时的结果,但是为LiTaO3薄膜时,也取得同样的结果。
(实验例2)
在与实验例1同样的兰姆波器件中,求出IDT电极4的厚度和压电薄膜3的膜厚分别变化时的兰姆波的机电耦合系数。图4和图5表示该结果。在图4和图5中,h是IDT电极的膜厚,d是压电薄膜的膜厚,λ表示兰姆波的波长。另外,在计算时使用有限元法。图4关于兰姆波的各模式,表示d/λ=0.1时的对于h/d的变化的机电耦合系数的变化。从图4可知,从h/d超过0.24开始,主模式的A1模式的机电耦合系数K2下降,其他模式的机电耦合系数K2增大。因此,在d/λ=0.1时,h/d的上限值大约为0.24,由此能实现抑制乱真响应的兰姆波器件。
另外,关于图4所示的各模式的记录方法,如下所述。定义兰姆波的模式表示为Xn(i)。X是表示模式的种类的记号,在表示为A时,表示反对称模式,表示为S时,表示是对称模式。n是0以上的整数,表示模式的次数,表示最大变位成分的压电薄膜的厚度方向的波节的数量。i是1以上的整数,表示最大变位成分的兰姆波的传播方向半波长区间的波节的数量。在i是1时,省略(i)的表示。
接着,表示d/λ变化时的各模式的机电耦合系数K2的变化。图5是表示把h/d固定在0.24,d/λ在0.08~0.3的范围中变化时的兰姆波的各模式的机电耦合系数K2的变化的图。从图5可知,在d/λ的几个范围中,主模式的A1模式的机电耦合系数K2下降,其他模式的机电耦合系数K2增大。这样的d/λ的范围不适合于滤波器。
如果综合图4和图5进行判断,则h/d≤0.24,如果d/λ处于满足以下的I~III的条件的范围,
I 0.090≤d/λ≤0.107
II 0.133≤d/λ≤0.233
III 0.257≤d/λ≤0.300
主模式的A1模式以外的模式的机电耦合系数被抑制在充分小,据此,能够抑制乱真的发生,并能实现良好的特性的兰姆波器件。另外,IDT电极的材料并不局限于Al,即使是以Al为主成分的合金,也能够取得相同的效果。如果h/d低于0.01,就由于伴随着电极的电阻的增大的电流的实际损失,插入损失恶化,所以h/d是0.01以上。
(实验例3)
在实验例3中,除了实验例1的兰姆波器件的衬底基板2和压电薄膜3变为LiTaO3以外,基本结构与实验例1同样。与实验例2同样,求出IDT电极4的厚度和压电薄膜3的膜厚分别变化时的兰姆波的机电耦合系数。图6和图7表示该结果。在图6、图7中,与图4和图5同样,h表示IDT电极的膜厚,d表示压电薄膜的膜厚,λ表示兰姆波的波长。另外,在计算时使用有限元法。图6关于兰姆波的各模式,表示d/λ=0.1时的相对于h/d的变化的机电耦合系数的变化。从图6可知,从h/d超过0.26开始,主模式的A1模式的机电耦合系数K2下降,其他模式的机电耦合系数K2增大。
接着,表示d/λ变化时的各模式的机电耦合系数的变化。图5是表示把h/d固定在0.26,使d/λ在0.08~0.3的范围中变化时的兰姆波的各模式的机电耦合系数K2的变化的图。从图7可知,在d/λ的几个范围中,主模式的A1模式的机电耦合系数K2下降,其他模式的机电耦合系数K2增大。这样的d/λ的范围不适合于滤波器。
如果综合图6和图7进行判断,则h/d≤0.26,如果d/λ处于满足以下的IV~VI的条件的范围:
IV 0.093≤d/λ≤0.125
V 0.141≤d/λ≤0.240
VI 0.260≤d/λ≤0.300,
则主模式的A1模式以外的模式的机电耦合系数被抑制在充分小,据此,能抑制乱真的发生,能实现良好的特性的兰姆波器件。另外,IDT电极的材料并不局限于Al,即使是以Al为主成分的合金,也取得相同的效果。如果h/d低于0.01,就由于伴随着电极的电阻的增大的电流的实际损失,插入损失恶化,所以h/d是0.01以上。
另外,在图1所示的兰姆波器件1中,IDT电极4形成在vd第二面3b。这时,在压电薄膜3的上表面即在外侧露出的面形成IDT电极4,所以能容易形成IDT电极。因此,能提供廉价的兰姆波器件1。
IDT电极4形成在压电薄膜3的第一面3a即与衬底基板2相对的内侧的面上。在面对空隙A的内侧的第一面3a上形成IDT电极4时,即使从外壳金属分离的金属粉落下,也难以产生短路或特性不良。因此,能提供难以产生因金属粉等的附着引起的变动、并且耐湿性优异的兰姆波器件。
另外,在本说明书中,双晶是一个物质的单晶为2个以上,彼此按照特定的对称关系结合的一个固体,c轴为旋转轴的旋转双晶是双晶,用欧拉角表现各构成要素的单晶时,具有欧拉角彼此以c轴为中心旋转,能表现的对称关系。
Claims (5)
1.一种兰姆波器件,其中,
具有:
衬底基板;
压电薄膜,其形成在所述衬底基板上,具有从该衬底基板浮起的部分,该浮起的部分具有与衬底基板相对的第一面以及相反侧的面即第二面;
IDT电极,其配置在所述压电薄膜的第一、第二面的至少一方,
所述压电薄膜由LiTaO3或LiNbO3构成,
所述压电薄膜的c轴,处于与相对于所述压电薄膜的第一、第二面的法线大致相同的方向,该压电薄膜的晶体结构是以c轴为旋转轴的旋转双晶。
2.根据权利要求1所述的兰姆波器件,其特征在于,
所述压电薄膜是LiNbO3,
所述IDT电极由Al或以Al为主成分的合金构成,
设所述IDT电极的厚度为h,所述压电薄膜的膜厚为d,兰姆波的利用模式的波长为λ时,h和d满足以下I~III的其中一个条件:
I 0.01≤h/d≤0.24并且0.090≤d/λ≤0.107
II 0.01≤h/d≤0.24并且0.133≤d/λ≤0.233
III 0.01≤h/d≤0.24并且0.257≤d/λ≤0.300。
3.根据权利要求1所述的兰姆波器件,其特征在于,
所述压电薄膜是LiTabO3,所述IDT电极由Al或以Al为主成分的合金构成,
设所述IDT电极的厚度为h,所述压电薄膜的膜厚为d,兰姆波的利用模式的波长为λ时,h和d满足以下IV~VI的其中一个条件:
IV 0.01≤h/d≤0.26并且0.093≤d/λ≤0.125
V 0.01≤h/d≤0.26并且0.141≤d/λ≤0.240
VI 0.01≤h/d≤0.26并且0.260≤d/λ≤0.300。
4.根据权利要求1~3中任一项所述的兰姆波器件,其特征在于,
所述IDT电极形成在压电薄膜的第二面上。
5.根据权利要求1~3中任一项所述的兰姆波器件,其特征在于,
所述IDT电极形成在所述压电薄膜的第一面上。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101741344A (zh) * | 2008-11-19 | 2010-06-16 | 日本碍子株式会社 | 兰姆波装置 |
CN103308609A (zh) * | 2013-06-26 | 2013-09-18 | 哈尔滨工业大学 | 一种基于电磁超声发射换能器的Lamb波模式控制方法 |
CN105337586A (zh) * | 2015-12-03 | 2016-02-17 | 天津大学 | 兰姆波谐振器 |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4315174B2 (ja) | 2006-02-16 | 2009-08-19 | セイコーエプソン株式会社 | ラム波型高周波デバイスの製造方法 |
FR2922696B1 (fr) * | 2007-10-22 | 2010-03-12 | St Microelectronics Sa | Resonateur a ondes de lamb |
GB0723526D0 (en) * | 2007-12-03 | 2008-01-09 | Airbus Uk Ltd | Acoustic transducer |
US8482184B2 (en) | 2008-07-11 | 2013-07-09 | Panasonic Corporation | Plate wave element and electronic equipment using same |
JP2010088109A (ja) | 2008-09-05 | 2010-04-15 | Panasonic Corp | 弾性波素子と、これを用いた電子機器 |
EP2377176B1 (en) | 2008-12-17 | 2016-12-14 | Analog Devices, Inc. | Mechanical resonating structures including a temperature compensation structure |
US8686614B2 (en) * | 2008-12-17 | 2014-04-01 | Sand 9, Inc. | Multi-port mechanical resonating devices and related methods |
US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
JP5367612B2 (ja) * | 2009-02-17 | 2013-12-11 | 日本碍子株式会社 | ラム波装置 |
FR2947398B1 (fr) * | 2009-06-30 | 2013-07-05 | Commissariat Energie Atomique | Dispositif resonant a ondes acoustiques guidees et procede de realisation du dispositif |
US8604888B2 (en) * | 2009-12-23 | 2013-12-10 | Sand 9, Inc. | Oscillators having arbitrary frequencies and related systems and methods |
US8704604B2 (en) | 2009-12-23 | 2014-04-22 | Sand 9, Inc. | Oscillators having arbitrary frequencies and related systems and methods |
US8736388B2 (en) * | 2009-12-23 | 2014-05-27 | Sand 9, Inc. | Oscillators having arbitrary frequencies and related systems and methods |
WO2011109382A1 (en) | 2010-03-01 | 2011-09-09 | Sand9, Inc. | Microelectromechanical gyroscopes and related apparatus and methods |
US8833161B2 (en) | 2010-04-20 | 2014-09-16 | Sand 9, Inc. | Microelectromechanical gyroscopes and related apparatus and methods |
WO2012040043A1 (en) | 2010-09-20 | 2012-03-29 | Sand9, Inc. | Resonant sensing using extensional modes of a plate |
SG190064A1 (en) | 2010-11-08 | 2013-06-28 | Agency Science Tech & Res | A piezoelectric resonator |
JP5648695B2 (ja) | 2010-12-24 | 2015-01-07 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
WO2013021948A1 (ja) * | 2011-08-08 | 2013-02-14 | 株式会社村田製作所 | 弾性波装置 |
US9383208B2 (en) | 2011-10-13 | 2016-07-05 | Analog Devices, Inc. | Electromechanical magnetometer and applications thereof |
JP2013214954A (ja) * | 2012-03-07 | 2013-10-17 | Taiyo Yuden Co Ltd | 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法 |
JP5817928B2 (ja) * | 2012-05-15 | 2015-11-18 | 株式会社村田製作所 | 弾性波装置 |
US10800649B2 (en) | 2016-11-28 | 2020-10-13 | Analog Devices International Unlimited Company | Planar processing of suspended microelectromechanical systems (MEMS) devices |
US10784833B2 (en) | 2017-04-04 | 2020-09-22 | Vanguard International Semiconductor Singapore Pte. Ltd. | Lamb acoustic wave resonator and filter with self-aligned cavity via |
JP6662490B2 (ja) * | 2017-04-26 | 2020-03-11 | 株式会社村田製作所 | 弾性波装置 |
WO2019082806A1 (ja) * | 2017-10-23 | 2019-05-02 | 京セラ株式会社 | 弾性波素子 |
US11509279B2 (en) | 2020-07-18 | 2022-11-22 | Resonant Inc. | Acoustic resonators and filters with reduced temperature coefficient of frequency |
US10756697B2 (en) | 2018-06-15 | 2020-08-25 | Resonant Inc. | Transversely-excited film bulk acoustic resonator |
US11323096B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
US10601392B2 (en) | 2018-06-15 | 2020-03-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator |
US11929731B2 (en) | 2018-02-18 | 2024-03-12 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch |
US20220116015A1 (en) | 2018-06-15 | 2022-04-14 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch |
US11146232B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with reduced spurious modes |
US10491192B1 (en) | 2018-06-15 | 2019-11-26 | Resonant Inc. | Transversely-excited film bulk acoustic resonator |
US20210328574A1 (en) | 2020-04-20 | 2021-10-21 | Resonant Inc. | Small transversely-excited film bulk acoustic resonators with enhanced q-factor |
US11323090B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications |
US11936358B2 (en) | 2020-11-11 | 2024-03-19 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with low thermal impedance |
US10790802B2 (en) | 2018-06-15 | 2020-09-29 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate |
US11323089B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer |
US10911023B2 (en) | 2018-06-15 | 2021-02-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with etch-stop layer |
US10637438B2 (en) | 2018-06-15 | 2020-04-28 | Resonant Inc. | Transversely-excited film bulk acoustic resonators for high power applications |
US11206009B2 (en) | 2019-08-28 | 2021-12-21 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch |
US11870424B2 (en) | 2018-06-15 | 2024-01-09 | Murata Manufacturing Co., Ltd. | Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers |
US11909381B2 (en) | 2018-06-15 | 2024-02-20 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer |
US10998882B2 (en) | 2018-06-15 | 2021-05-04 | Resonant Inc. | XBAR resonators with non-rectangular diaphragms |
US11916539B2 (en) | 2020-02-28 | 2024-02-27 | Murata Manufacturing Co., Ltd. | Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators |
US11323095B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Rotation in XY plane to suppress spurious modes in XBAR devices |
US10868513B2 (en) | 2018-06-15 | 2020-12-15 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
US11329628B2 (en) | 2020-06-17 | 2022-05-10 | Resonant Inc. | Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators |
US11374549B2 (en) | 2018-06-15 | 2022-06-28 | Resonant Inc. | Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers |
US10992283B2 (en) | 2018-06-15 | 2021-04-27 | Resonant Inc. | High power transversely-excited film bulk acoustic resonators on rotated Z-cut lithium niobate |
US11876498B2 (en) | 2018-06-15 | 2024-01-16 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method |
US10917072B2 (en) | 2019-06-24 | 2021-02-09 | Resonant Inc. | Split ladder acoustic wave filters |
US11870423B2 (en) | 2018-06-15 | 2024-01-09 | Murata Manufacturing Co., Ltd. | Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator |
US11146238B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Film bulk acoustic resonator fabrication method |
US11949402B2 (en) | 2020-08-31 | 2024-04-02 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
US11264966B2 (en) | 2018-06-15 | 2022-03-01 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack |
US11888463B2 (en) | 2018-06-15 | 2024-01-30 | Murata Manufacturing Co., Ltd. | Multi-port filter using transversely-excited film bulk acoustic resonators |
US11171629B2 (en) | 2018-06-15 | 2021-11-09 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using pre-formed cavities |
US11901878B2 (en) | 2018-06-15 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer |
US10819309B1 (en) | 2019-04-05 | 2020-10-27 | Resonant Inc. | Transversely-excited film bulk acoustic resonator package and method |
US11201601B2 (en) | 2018-06-15 | 2021-12-14 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method |
US11228296B2 (en) | 2018-06-15 | 2022-01-18 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with a cavity having a curved perimeter |
US10998877B2 (en) | 2018-06-15 | 2021-05-04 | Resonant Inc. | Film bulk acoustic resonator fabrication method with frequency trimming based on electric measurements prior to cavity etch |
US11349450B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes |
US11349452B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
US11323091B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with diaphragm support pedestals |
US10985728B2 (en) | 2018-06-15 | 2021-04-20 | Resonant Inc. | Transversely-excited film bulk acoustic resonator and filter with a uniform-thickness dielectric overlayer |
US11728785B2 (en) | 2018-06-15 | 2023-08-15 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator using pre-formed cavities |
US10826462B2 (en) | 2018-06-15 | 2020-11-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with molybdenum conductors |
US10797675B2 (en) | 2018-06-15 | 2020-10-06 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated z-cut lithium niobate |
US10992284B2 (en) | 2018-06-15 | 2021-04-27 | Resonant Inc. | Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers |
US10843920B2 (en) | 2019-03-08 | 2020-11-24 | Analog Devices International Unlimited Company | Suspended microelectromechanical system (MEMS) devices |
WO2020186261A1 (en) | 2019-03-14 | 2020-09-17 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer |
US11901873B2 (en) | 2019-03-14 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with partial BRAGG reflectors |
US10911021B2 (en) | 2019-06-27 | 2021-02-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with lateral etch stop |
US11329625B2 (en) | 2019-07-18 | 2022-05-10 | Resonant Inc. | Film bulk acoustic sensors using thin LN-LT layer |
US10862454B1 (en) | 2019-07-18 | 2020-12-08 | Resonant Inc. | Film bulk acoustic resonators in thin LN-LT layers |
CN113328721A (zh) * | 2020-02-28 | 2021-08-31 | 谐振公司 | 一种带有多节距叉指式换能器的横向激励的薄膜体声波谐振器 |
US20210273629A1 (en) | 2020-02-28 | 2021-09-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer |
WO2021222409A1 (en) * | 2020-04-29 | 2021-11-04 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with controlled conductor sidewall angles |
US11811391B2 (en) | 2020-05-04 | 2023-11-07 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with etched conductor patterns |
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WO2023234383A1 (ja) * | 2022-06-01 | 2023-12-07 | 京セラ株式会社 | 弾性波装置および通信装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH036912A (ja) | 1989-06-02 | 1991-01-14 | Fujitsu Ltd | 弾性表面波素子 |
US5003822A (en) * | 1989-10-02 | 1991-04-02 | Joshi Shrinivas G | Acoustic wave microsensors for measuring fluid flow |
JP2983252B2 (ja) * | 1990-05-14 | 1999-11-29 | 株式会社東芝 | 圧電薄膜デバイス |
JP2002152007A (ja) * | 2000-11-15 | 2002-05-24 | Hitachi Ltd | ラム波型弾性波共振器 |
CN1382979A (zh) * | 2001-04-20 | 2002-12-04 | 中国科学院长春光学精密机械与物理研究所 | 静电叠层式兰姆波微型传感器 |
JP2003017969A (ja) | 2001-06-27 | 2003-01-17 | Takaya Watanabe | 弾性表面波装置 |
JP3904073B2 (ja) * | 2002-02-12 | 2007-04-11 | セイコーエプソン株式会社 | 弾性表面波装置 |
JP4134627B2 (ja) * | 2002-08-02 | 2008-08-20 | 株式会社日立製作所 | 窒化アルミニウム圧電薄膜を用いた高周波弾性波素子 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101741344A (zh) * | 2008-11-19 | 2010-06-16 | 日本碍子株式会社 | 兰姆波装置 |
CN103308609A (zh) * | 2013-06-26 | 2013-09-18 | 哈尔滨工业大学 | 一种基于电磁超声发射换能器的Lamb波模式控制方法 |
CN103308609B (zh) * | 2013-06-26 | 2015-05-20 | 哈尔滨工业大学 | 一种基于电磁超声发射换能器的Lamb波模式控制方法 |
CN105337586A (zh) * | 2015-12-03 | 2016-02-17 | 天津大学 | 兰姆波谐振器 |
CN105337586B (zh) * | 2015-12-03 | 2018-04-17 | 天津大学 | 兰姆波谐振器 |
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US7535152B2 (en) | 2009-05-19 |
EP1947765A4 (en) | 2009-09-02 |
EP1947765A1 (en) | 2008-07-23 |
JP4613960B2 (ja) | 2011-01-19 |
EP1947765B1 (en) | 2012-04-11 |
KR100904368B1 (ko) | 2009-06-23 |
CN101292423B (zh) | 2010-08-25 |
JPWO2007046236A1 (ja) | 2009-04-23 |
US20080179989A1 (en) | 2008-07-31 |
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WO2007046236A1 (ja) | 2007-04-26 |
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