JPWO2007046236A1 - ラム波デバイス - Google Patents
ラム波デバイス Download PDFInfo
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 73
- 239000010409 thin film Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 238000007667 floating Methods 0.000 abstract description 4
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 22
- 238000010168 coupling process Methods 0.000 description 22
- 238000005859 coupling reaction Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
Abstract
Description
電子通信学会論文誌’85/5Vol.J68−ANo.5 第496頁〜第503頁「回転YカットX伝搬LiNbO3平板におけるラム波伝搬特性の解析」
II 0.01≦h/d≦0.24かつ0.133≦d/λ≦0.233
III 0.01≦h/d≦0.24かつ0.257≦d/λ≦0.300
本発明に係るラム波デバイスの他の特定の局面では、前記圧電薄膜が、LiTabO3であり、前記IDT電極が、AlもしくはAlを主成分とする合金からなり、前記IDT電極の厚みをh、前記圧電薄膜の膜厚をd、ラム波の利用するモードの波長をλとしたときに、h及びdは下記IV〜VIのいずれかの条件を満たすことを特徴とする。
V 0.01≦h/d≦0.26かつ0.141≦d/λ≦0.240
VI 0.01≦h/d≦0.26かつ0.260≦d/λ≦0.300
本発明に係るラム波デバイスのさらに別の特定の局面では、上記IDT電極は、圧電薄膜の第2の面に形成されている。
(発明の効果)
2…ベース基板
3…圧電薄膜
3a…第1の面
3b…第2の面
4…IDT電極
図1は、本発明の一実施形態に係るラム波デバイスを説明するための模式的正面断面図である。ラム波デバイス1は、ベース基板2とベース基板2上に形成された圧電薄膜3とを有する。圧電薄膜3は、ベース基板2の上面2a上に形成されているが、圧電薄膜3の一部がベース基板2の上面2aから浮かされている。この浮かされている部分において、圧電薄膜3の第1の面3aがベース基板2の上面2aとギャップを隔てて対向されており、第1の面3aとは反対側の面である外側の面である第2の面3b上にIDT電極4が形成されている。IDT電極4は、所望の共振子やフィルタを構成するために設けられている。
実験例1と同様のラム波デバイスにおいて、IDT電極4の厚みと圧電薄膜3の膜厚を種々変化させたときのラム波の電気機械結合係数を求めた。この結果を図4及び図5に示す。図4及び図5において、hはIDT電極の膜厚、dは圧電薄膜の膜厚、λはラム波の波長を表す。なお、計算に際しては有限要素法を用いた。図4はd/λ=0.1としたときの、h/dの変化に対する電気機械結合係数の変化をラム波の各モードについて示したものである。図4から明らかなように、h/dが0.24を越えたあたりから、主モードであるA1モードの電気機械結合係数K2が低下し、他のモードの電気機械結合係数K2は大きくなることがわかる。従って、d/λ=0.1のときにはh/dの上限値をおよそ0.24とすることにより、スプリアス応答を抑圧したラム波デバイスが実現できることがわかる。
I 0.090≦d/λ≦0.107
II 0.133≦d/λ≦0.233
III 0.257≦d/λ≦0.300
にあれば、主モードであるA1モード以外のモードの電気機械結合係数が十分に小さく抑圧され、これによりスプリアスの発生が抑圧されて良好な特性のラム波デバイスを実現できる。なお、IDT電極の材料はAlのみに限らず、Alを主成分とする合金であっても同じ結果が得られる。h/dは0.01を下回ると、電極の電気抵抗の増大に伴う電流の実損失により挿入損失が劣化するためh/dは0.01以上であることが望ましい。
実験例3においては実験例1のラム波デバイスのベース基板2及び圧電薄膜3をLiTaO3とした以外は基本的構成は実験例1と同様である。実験例2と同様に、IDT電極4の厚みと圧電薄膜3の膜厚を種々変化させたときのラム波の電気機械結合係数を求めた。この結果を図6,図7に示す。図6,図7においても図4,図5と同様に、hはIDT電極の膜厚、dは圧電薄膜の膜厚、λはラム波の波長を表す。なお、計算に際しては有限要素法を用いた。図6はd/λ=0.1としたときの、h/dの変化に対する電気機械結合係数の変化をラム波の各モードについて示したものである。図6から明らかなように、h/dが0.26を越えたあたりから、主モードであるA1モードの電気機械結合係数K2が低下し、他のモードの電気機械結合係数K2は大きくなることがわかる。
IV 0.093≦d/λ≦0.125
V 0.141≦d/λ≦0.240
VI 0.260≦d/λ≦0.300
にあれば、主モードであるA1モード以外のモードの電気機械結合係数が十分に小さく抑圧され、これによりスプリアスの発生が抑圧されて良好な特性のラム波デバイスを実現できる。なお、IDT電極の材料はAlのみに限らず、Alを主成分とする合金であっても同じ結果が得られる。h/dは0.01を下回ると、電極の電気抵抗の増大に伴う電流の実損失により挿入損失が劣化するためh/dは0.01以上であることが望ましい。
Claims (5)
- ベース基板と、
前記ベース基板上に形成されており、該ベース基板から浮かされた部分を有し、該浮かされた部分が、ベース基板に対向している第1の面と反対側の面である第2の面とを有する圧電薄膜と、
前記圧電薄膜の第1,第2の面の少なくとも一方に配置されたIDT電極とを備えるラム波デバイスであって、
前記圧電薄膜が、LiTaO3またはLiNbO3からなり、
前記圧電薄膜のc軸が、前記圧電薄膜の第1,第2の面に対する法線と略同じ方向とされており、該圧電薄膜の結晶構造がc軸を回転軸とした回転双晶であることを特徴とする、ラム波デバイス。 - 前記圧電薄膜が、LiNbO3であり、
前記IDT電極が、AlもしくはAlを主成分とする合金からなり、
前記IDT電極の厚みをh、前記圧電薄膜の膜厚をd、ラム波の利用モードの波長をλとしたときに、h及びdは下記I〜IIIのいずれかの条件を満たすことを特徴とする、請求項1に記載のラム波デバイス。
I 0.01≦h/d≦0.24かつ0.090≦d/λ≦0.107
II 0.01≦h/d≦0.24かつ0.133≦d/λ≦0.233
III 0.01≦h/d≦0.24かつ0.257≦d/λ≦0.300 - 前記圧電薄膜が、LiTabO3であり、
前記IDT電極が、AlもしくはAlを主成分とする合金からなり、
前記IDT電極の厚みをh、前記圧電薄膜の膜厚をd、ラム波の利用モードの波長をλとしたときに、h及びdは下記IV〜VIのいずれかの条件を満たすことを特徴とする、請求項1に記載のラム波デバイス。
IV 0.01≦h/d≦0.26かつ0.093≦d/λ≦0.125
V 0.01≦h/d≦0.26かつ0.141≦d/λ≦0.240
VI 0.01≦h/d≦0.26かつ0.260≦d/λ≦0.300 - 前記IDT電極が、圧電薄膜の第2の面に形成されている、請求項1〜3のいずれか1項に記載のラム波デバイス。
- 前記IDT電極が、前記圧電薄膜の第1の面に形成されている、請求項1〜3のいずれか1項に記載のラム波デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005304218 | 2005-10-19 | ||
JP2005304218 | 2005-10-19 | ||
PCT/JP2006/319852 WO2007046236A1 (ja) | 2005-10-19 | 2006-10-04 | ラム波デバイス |
Publications (2)
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JPWO2007046236A1 true JPWO2007046236A1 (ja) | 2009-04-23 |
JP4613960B2 JP4613960B2 (ja) | 2011-01-19 |
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JP2007540914A Active JP4613960B2 (ja) | 2005-10-19 | 2006-10-04 | ラム波デバイス |
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US (1) | US7535152B2 (ja) |
EP (1) | EP1947765B1 (ja) |
JP (1) | JP4613960B2 (ja) |
KR (1) | KR100904368B1 (ja) |
CN (1) | CN101292423B (ja) |
WO (1) | WO2007046236A1 (ja) |
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US7535152B2 (en) | 2009-05-19 |
EP1947765A4 (en) | 2009-09-02 |
CN101292423A (zh) | 2008-10-22 |
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JP4613960B2 (ja) | 2011-01-19 |
EP1947765B1 (en) | 2012-04-11 |
KR100904368B1 (ko) | 2009-06-23 |
CN101292423B (zh) | 2010-08-25 |
US20080179989A1 (en) | 2008-07-31 |
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WO2007046236A1 (ja) | 2007-04-26 |
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