CN101288223B - 具有多重栅极晶体管的压控振荡器及其方法 - Google Patents

具有多重栅极晶体管的压控振荡器及其方法 Download PDF

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Publication number
CN101288223B
CN101288223B CN2006800382118A CN200680038211A CN101288223B CN 101288223 B CN101288223 B CN 101288223B CN 2006800382118 A CN2006800382118 A CN 2006800382118A CN 200680038211 A CN200680038211 A CN 200680038211A CN 101288223 B CN101288223 B CN 101288223B
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CN
China
Prior art keywords
transistor
electrode
controlled oscillator
coupled
migfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800382118A
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English (en)
Chinese (zh)
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CN101288223A (zh
Inventor
斯里拉姆·S·卡尔帕特
莱奥·马修
穆罕默德·S·穆萨
迈克尔·A·萨德
赫克托·桑切斯
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NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
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Publication of CN101288223A publication Critical patent/CN101288223A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/00019—Variable delay
    • H03K2005/00026—Variable delay controlled by an analog electrical signal, e.g. obtained after conversion by a D/A converter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/00019—Variable delay
    • H03K2005/00058—Variable delay controlled by a digital setting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2006800382118A 2005-10-14 2006-10-04 具有多重栅极晶体管的压控振荡器及其方法 Expired - Fee Related CN101288223B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/250,994 US7279997B2 (en) 2005-10-14 2005-10-14 Voltage controlled oscillator with a multiple gate transistor and method therefor
US11/250,994 2005-10-14
PCT/US2006/039177 WO2007047164A2 (en) 2005-10-14 2006-10-04 Voltage controlled oscillator with a multiple gate transistor and method therefor

Publications (2)

Publication Number Publication Date
CN101288223A CN101288223A (zh) 2008-10-15
CN101288223B true CN101288223B (zh) 2011-10-05

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Family Applications (1)

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CN2006800382118A Expired - Fee Related CN101288223B (zh) 2005-10-14 2006-10-04 具有多重栅极晶体管的压控振荡器及其方法

Country Status (6)

Country Link
US (1) US7279997B2 (enExample)
JP (1) JP2009512344A (enExample)
KR (1) KR101291522B1 (enExample)
CN (1) CN101288223B (enExample)
TW (1) TW200721691A (enExample)
WO (1) WO2007047164A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612619B2 (en) * 2006-03-23 2009-11-03 Freescale Semiconductor, Inc Phase detector device and method thereof
US20090321834A1 (en) * 2008-06-30 2009-12-31 Willy Rachmady Substrate fins with different heights
KR101064129B1 (ko) 2009-07-13 2011-09-15 이화여자대학교 산학협력단 피드포워드 링 오실레이터
JP4945650B2 (ja) * 2010-03-10 2012-06-06 株式会社東芝 半導体装置
US8866510B2 (en) * 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105026309B (zh) * 2013-03-28 2017-04-12 英特尔公司 多栅极谐振沟道晶体管
US9269711B2 (en) * 2013-07-01 2016-02-23 Infineon Technologies Austria Ag Semiconductor device
JP6561138B2 (ja) * 2015-05-20 2019-08-14 シーラス ロジック インターナショナル セミコンダクター リミテッド リング周波数分割器
JP6872837B2 (ja) * 2017-06-02 2021-05-19 ユナイテッド・セミコンダクター・ジャパン株式会社 発振回路及び電圧制御装置

Citations (5)

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CN1264961A (zh) * 1999-02-25 2000-08-30 国际商业机器公司 利用晶体管阈值电压控制的压控振荡器
CN1346178A (zh) * 2000-09-29 2002-04-24 三菱电机株式会社 宽输出频率范围的vco电路及带该vco电路的pll电路
CN1507063A (zh) * 2002-12-06 2004-06-23 ̨������·����ɷ����޹�˾ 使用多栅极晶体管的互补金属氧化物半导体晶体管反向器
US6756826B1 (en) * 2003-06-12 2004-06-29 Fairchild Semiconductor Corporation Method of reducing the propagation delay and process and temperature effects on a buffer
CN1565076A (zh) * 2001-10-01 2005-01-12 摩托罗拉公司 多相位压控振荡器

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US5144170A (en) * 1991-06-28 1992-09-01 Motorola, Inc. Circuit and method of aligning clock signals
US5463353A (en) * 1994-09-06 1995-10-31 Motorola, Inc. Resistorless VCO including current source and sink controlling a current controlled oscillator
US5675341A (en) 1995-06-02 1997-10-07 Lucent Technologies Inc. Current-mode parallel analog-to-digital converter
US6720812B2 (en) 1995-06-02 2004-04-13 Nova R&D, Inc. Multi-channel integrated circuit
US5604700A (en) 1995-07-28 1997-02-18 Motorola, Inc. Non-volatile memory cell having a single polysilicon gate
JP2917957B2 (ja) * 1997-02-14 1999-07-12 日本電気株式会社 発振回路および遅延回路
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US5936433A (en) 1998-01-23 1999-08-10 National Semiconductor Corporation Comparator including a transconducting inverter biased to operate in subthreshold
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JP4794067B2 (ja) * 2001-05-24 2011-10-12 ルネサスエレクトロニクス株式会社 内部クロック発生回路
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JP2003163579A (ja) * 2001-11-26 2003-06-06 Eng Kk 周波数可変発振回路
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JP4334564B2 (ja) * 2006-12-14 2009-09-30 株式会社東芝 トランスコンダクタ

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Publication number Priority date Publication date Assignee Title
CN1264961A (zh) * 1999-02-25 2000-08-30 国际商业机器公司 利用晶体管阈值电压控制的压控振荡器
CN1346178A (zh) * 2000-09-29 2002-04-24 三菱电机株式会社 宽输出频率范围的vco电路及带该vco电路的pll电路
CN1565076A (zh) * 2001-10-01 2005-01-12 摩托罗拉公司 多相位压控振荡器
CN1507063A (zh) * 2002-12-06 2004-06-23 ̨������·����ɷ����޹�˾ 使用多栅极晶体管的互补金属氧化物半导体晶体管反向器
US6756826B1 (en) * 2003-06-12 2004-06-29 Fairchild Semiconductor Corporation Method of reducing the propagation delay and process and temperature effects on a buffer

Also Published As

Publication number Publication date
CN101288223A (zh) 2008-10-15
TW200721691A (en) 2007-06-01
US7279997B2 (en) 2007-10-09
KR20080046260A (ko) 2008-05-26
WO2007047164A3 (en) 2007-09-27
US20070085153A1 (en) 2007-04-19
WO2007047164A2 (en) 2007-04-26
KR101291522B1 (ko) 2013-08-16
JP2009512344A (ja) 2009-03-19

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Granted publication date: 20111005

Termination date: 20191004