KR101291522B1 - 다중 게이트 트랜지스터를 갖는 전압 제어 발진기 및 그방법 - Google Patents

다중 게이트 트랜지스터를 갖는 전압 제어 발진기 및 그방법 Download PDF

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Publication number
KR101291522B1
KR101291522B1 KR1020087008876A KR20087008876A KR101291522B1 KR 101291522 B1 KR101291522 B1 KR 101291522B1 KR 1020087008876 A KR1020087008876 A KR 1020087008876A KR 20087008876 A KR20087008876 A KR 20087008876A KR 101291522 B1 KR101291522 B1 KR 101291522B1
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South Korea
Prior art keywords
transistor
control electrode
coupled
fin structure
migfet
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Expired - Fee Related
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KR1020087008876A
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English (en)
Korean (ko)
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KR20080046260A (ko
Inventor
스리램 에스. 칼팻
레오 매튜
모하메드 에스. 무사
마이클 에이. 사드
헥터 산체스
Original Assignee
프리스케일 세미컨덕터, 인크.
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Publication of KR20080046260A publication Critical patent/KR20080046260A/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/00019—Variable delay
    • H03K2005/00026—Variable delay controlled by an analog electrical signal, e.g. obtained after conversion by a D/A converter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/00019—Variable delay
    • H03K2005/00058—Variable delay controlled by a digital setting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
KR1020087008876A 2005-10-14 2006-10-04 다중 게이트 트랜지스터를 갖는 전압 제어 발진기 및 그방법 Expired - Fee Related KR101291522B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/250,994 2005-10-14
US11/250,994 US7279997B2 (en) 2005-10-14 2005-10-14 Voltage controlled oscillator with a multiple gate transistor and method therefor
PCT/US2006/039177 WO2007047164A2 (en) 2005-10-14 2006-10-04 Voltage controlled oscillator with a multiple gate transistor and method therefor

Publications (2)

Publication Number Publication Date
KR20080046260A KR20080046260A (ko) 2008-05-26
KR101291522B1 true KR101291522B1 (ko) 2013-08-16

Family

ID=37947377

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087008876A Expired - Fee Related KR101291522B1 (ko) 2005-10-14 2006-10-04 다중 게이트 트랜지스터를 갖는 전압 제어 발진기 및 그방법

Country Status (6)

Country Link
US (1) US7279997B2 (enExample)
JP (1) JP2009512344A (enExample)
KR (1) KR101291522B1 (enExample)
CN (1) CN101288223B (enExample)
TW (1) TW200721691A (enExample)
WO (1) WO2007047164A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612619B2 (en) * 2006-03-23 2009-11-03 Freescale Semiconductor, Inc Phase detector device and method thereof
US20090321834A1 (en) 2008-06-30 2009-12-31 Willy Rachmady Substrate fins with different heights
KR101064129B1 (ko) * 2009-07-13 2011-09-15 이화여자대학교 산학협력단 피드포워드 링 오실레이터
JP4945650B2 (ja) * 2010-03-10 2012-06-06 株式会社東芝 半導体装置
US8866510B2 (en) * 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9294035B2 (en) * 2013-03-28 2016-03-22 Intel Corporation Multigate resonant channel transistor
US9269711B2 (en) * 2013-07-01 2016-02-23 Infineon Technologies Austria Ag Semiconductor device
US9595971B2 (en) * 2015-05-20 2017-03-14 Cirrus Logic, Inc. Ring frequency divider
JP6872837B2 (ja) * 2017-06-02 2021-05-19 ユナイテッド・セミコンダクター・ジャパン株式会社 発振回路及び電圧制御装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098748A1 (en) * 2001-11-26 2003-05-29 Exploitation Of Next Generation Co., Ltd. Frequency variable oscillation circuit

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US4872010A (en) 1988-02-08 1989-10-03 Hughes Aircraft Company Analog-to-digital converter made with focused ion beam technology
US5144170A (en) 1991-06-28 1992-09-01 Motorola, Inc. Circuit and method of aligning clock signals
US5463353A (en) 1994-09-06 1995-10-31 Motorola, Inc. Resistorless VCO including current source and sink controlling a current controlled oscillator
US6720812B2 (en) 1995-06-02 2004-04-13 Nova R&D, Inc. Multi-channel integrated circuit
US5675341A (en) 1995-06-02 1997-10-07 Lucent Technologies Inc. Current-mode parallel analog-to-digital converter
US5604700A (en) 1995-07-28 1997-02-18 Motorola, Inc. Non-volatile memory cell having a single polysilicon gate
JP2917957B2 (ja) * 1997-02-14 1999-07-12 日本電気株式会社 発振回路および遅延回路
JP2002511844A (ja) 1997-04-11 2002-04-16 ロシュ ダイアグノスティックス ゲーエムベーハー ウロキナーゼレセプターの阻害
US5936433A (en) 1998-01-23 1999-08-10 National Semiconductor Corporation Comparator including a transconducting inverter biased to operate in subthreshold
US6222395B1 (en) 1999-01-04 2001-04-24 International Business Machines Corporation Single-ended semiconductor receiver with built in threshold voltage difference
US6133799A (en) * 1999-02-25 2000-10-17 International Business Machines Corporation Voltage controlled oscillator utilizing threshold voltage control of silicon on insulator MOSFETS
JP2002111449A (ja) * 2000-09-29 2002-04-12 Mitsubishi Electric Corp 電圧制御発振回路およびそれを備える位相同期ループ回路
AU2002240163A1 (en) 2001-01-26 2002-08-06 John George Maneatis Phase-locked loop with conditioned charge pump output
JP4794067B2 (ja) * 2001-05-24 2011-10-12 ルネサスエレクトロニクス株式会社 内部クロック発生回路
US6657502B2 (en) * 2001-10-01 2003-12-02 Motorola, Inc. Multiphase voltage controlled oscillator
US6677569B2 (en) 2001-10-12 2004-01-13 Massachusetts Institute Of Technology Methods and apparatus for performing signal processing functions in an electronic imager
US7214991B2 (en) * 2002-12-06 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS inverters configured using multiple-gate transistors
US6756826B1 (en) 2003-06-12 2004-06-29 Fairchild Semiconductor Corporation Method of reducing the propagation delay and process and temperature effects on a buffer
US6842136B1 (en) 2003-11-28 2005-01-11 Texas Instruments Incorporated Low-jitter clock distribution circuit
US6969656B2 (en) 2003-12-05 2005-11-29 Freescale Semiconductor, Inc. Method and circuit for multiplying signals with a transistor having more than one independent gate structure
US6972702B1 (en) 2004-06-15 2005-12-06 Hrl Laboratories, Llc 1-Of-N A/D converter
JP4334564B2 (ja) * 2006-12-14 2009-09-30 株式会社東芝 トランスコンダクタ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098748A1 (en) * 2001-11-26 2003-05-29 Exploitation Of Next Generation Co., Ltd. Frequency variable oscillation circuit

Also Published As

Publication number Publication date
CN101288223B (zh) 2011-10-05
WO2007047164A2 (en) 2007-04-26
WO2007047164A3 (en) 2007-09-27
KR20080046260A (ko) 2008-05-26
TW200721691A (en) 2007-06-01
JP2009512344A (ja) 2009-03-19
US20070085153A1 (en) 2007-04-19
CN101288223A (zh) 2008-10-15
US7279997B2 (en) 2007-10-09

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