CN101276824B - 半导体器件及电子设备 - Google Patents

半导体器件及电子设备 Download PDF

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Publication number
CN101276824B
CN101276824B CN200810086693.5A CN200810086693A CN101276824B CN 101276824 B CN101276824 B CN 101276824B CN 200810086693 A CN200810086693 A CN 200810086693A CN 101276824 B CN101276824 B CN 101276824B
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CN
China
Prior art keywords
wiring
electrode
photoelectric conversion
terminal
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810086693.5A
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English (en)
Chinese (zh)
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CN101276824A (zh
Inventor
宍户英明
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101276824A publication Critical patent/CN101276824A/zh
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Publication of CN101276824B publication Critical patent/CN101276824B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN200810086693.5A 2007-03-26 2008-03-26 半导体器件及电子设备 Expired - Fee Related CN101276824B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-079763 2007-03-26
JP2007079763 2007-03-26

Publications (2)

Publication Number Publication Date
CN101276824A CN101276824A (zh) 2008-10-01
CN101276824B true CN101276824B (zh) 2015-07-15

Family

ID=39792697

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810086693.5A Expired - Fee Related CN101276824B (zh) 2007-03-26 2008-03-26 半导体器件及电子设备

Country Status (4)

Country Link
US (1) US8354724B2 (enExample)
JP (1) JP2008270757A (enExample)
KR (1) KR101387370B1 (enExample)
CN (1) CN101276824B (enExample)

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KR101401528B1 (ko) * 2007-06-29 2014-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치 및 그 광전변환장치를 구비하는 전자기기
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
CN103872002B (zh) * 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
US8115160B2 (en) * 2008-03-14 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Protection circuit and photoelectric conversion device
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
US9040981B2 (en) * 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5830400B2 (ja) * 2012-02-02 2015-12-09 ルネサスエレクトロニクス株式会社 半導体装置、および半導体装置の製造方法
JP2013161878A (ja) * 2012-02-02 2013-08-19 Renesas Electronics Corp 半導体装置、および半導体装置の製造方法
JP5969961B2 (ja) * 2013-07-12 2016-08-17 富士フイルム株式会社 配線基板
KR101849693B1 (ko) * 2014-11-24 2018-04-16 아티룩스 인코포레이티드 동일한 기판 상에 트랜지스터와 광 검출기를 제조하기 위한 모놀리식 집적 기술
TWI710124B (zh) * 2015-01-30 2020-11-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
DE102018119710A1 (de) * 2018-08-14 2020-02-20 Universität Leipzig Vorrichtung und verfahren zur bestimmung einer wellenlänge einer strahlung
CN109166892B (zh) * 2018-08-30 2022-11-25 京东方科技集团股份有限公司 Oled显示基板及其制造方法、oled显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287888B1 (en) * 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
US20020044208A1 (en) * 2000-08-10 2002-04-18 Shunpei Yamazaki Area sensor and display apparatus provided with an area sensor
CN1612351A (zh) * 2003-10-06 2005-05-04 株式会社半导体能源研究所 半导体器件以及制造该器件的方法

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JPS58207663A (ja) * 1982-05-28 1983-12-03 Nec Corp 半導体装置
US4620212A (en) * 1982-05-28 1986-10-28 Nec Corporation Semiconductor device with a resistor of polycrystalline silicon
US4686487A (en) * 1986-07-28 1987-08-11 Commodore Business Machines, Inc. Current mirror amplifier
JPH0637558A (ja) 1992-07-20 1994-02-10 Nkk Corp 増幅回路
JP3300534B2 (ja) * 1993-09-13 2002-07-08 株式会社東芝 電子回路
JP3444093B2 (ja) * 1996-06-10 2003-09-08 株式会社デンソー 光センサ回路
JP3844613B2 (ja) * 1998-04-28 2006-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタ回路およびそれを用いた表示装置
JP3067102B2 (ja) * 1998-07-01 2000-07-17 キヤノン株式会社 光電変換装置
JP3319406B2 (ja) * 1998-09-18 2002-09-03 日本電気株式会社 比較増幅検出回路
US6255897B1 (en) * 1998-09-28 2001-07-03 Ericsson Inc. Current biasing circuit
US7193619B2 (en) * 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
JP2003140181A (ja) 2001-11-02 2003-05-14 Nec Corp 液晶表示装置
JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
JP4373063B2 (ja) * 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 電子回路装置
JP4294311B2 (ja) * 2002-12-27 2009-07-08 株式会社半導体エネルギー研究所 表示装置の作製方法および表示装置の加工基板
US6876233B1 (en) * 2003-02-15 2005-04-05 Medtronics, Inc. DC cancellation apparatus and method
US7253391B2 (en) * 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
JP2005129909A (ja) 2003-09-19 2005-05-19 Semiconductor Energy Lab Co Ltd 光センサー装置および電子機器
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JP4481135B2 (ja) 2003-10-06 2010-06-16 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
TWI229440B (en) * 2003-10-09 2005-03-11 Au Optronics Corp Electrostatic discharge protection structure
US7183147B2 (en) * 2004-03-25 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
WO2005114749A1 (en) 2004-05-21 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4761981B2 (ja) * 2005-01-28 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI569441B (zh) * 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7492028B2 (en) * 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
JP4532418B2 (ja) * 2005-02-18 2010-08-25 株式会社半導体エネルギー研究所 光センサ及びその作製方法
DE602007013478D1 (de) * 2006-02-08 2011-05-12 Semiconductor Energy Lab RFID-Vorrichtung
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287888B1 (en) * 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
US20020044208A1 (en) * 2000-08-10 2002-04-18 Shunpei Yamazaki Area sensor and display apparatus provided with an area sensor
CN1612351A (zh) * 2003-10-06 2005-05-04 株式会社半导体能源研究所 半导体器件以及制造该器件的方法

Also Published As

Publication number Publication date
CN101276824A (zh) 2008-10-01
JP2008270757A (ja) 2008-11-06
KR101387370B1 (ko) 2014-04-22
KR20080087678A (ko) 2008-10-01
US8354724B2 (en) 2013-01-15
US20080237665A1 (en) 2008-10-02

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Granted publication date: 20150715