CN101276028B - 光学半导体模块和受光组件 - Google Patents

光学半导体模块和受光组件 Download PDF

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Publication number
CN101276028B
CN101276028B CN2008100883644A CN200810088364A CN101276028B CN 101276028 B CN101276028 B CN 101276028B CN 2008100883644 A CN2008100883644 A CN 2008100883644A CN 200810088364 A CN200810088364 A CN 200810088364A CN 101276028 B CN101276028 B CN 101276028B
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CN
China
Prior art keywords
light
receiving
component
receiving component
conductivity type
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CN2008100883644A
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English (en)
Chinese (zh)
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CN101276028A (zh
Inventor
米田昌博
山日竜二
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Publication of CN101276028A publication Critical patent/CN101276028A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4256—Details of housings
    • G02B6/4257—Details of housings having a supporting carrier or a mounting substrate or a mounting plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
CN2008100883644A 2007-03-29 2008-03-28 光学半导体模块和受光组件 Active CN101276028B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-086131 2007-03-29
JP2007086131A JP5197978B2 (ja) 2007-03-29 2007-03-29 光半導体モジュール

Publications (2)

Publication Number Publication Date
CN101276028A CN101276028A (zh) 2008-10-01
CN101276028B true CN101276028B (zh) 2011-05-04

Family

ID=39650540

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100883644A Active CN101276028B (zh) 2007-03-29 2008-03-28 光学半导体模块和受光组件

Country Status (5)

Country Link
US (1) US7807954B2 (enExample)
EP (1) EP1976023A3 (enExample)
JP (1) JP5197978B2 (enExample)
CN (1) CN101276028B (enExample)
TW (1) TWI378662B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490576B (zh) * 2010-11-29 2015-07-01 Hon Hai Prec Ind Co Ltd 光通訊系統
US9318639B2 (en) * 2013-09-17 2016-04-19 Finisar Corporation Gallium arsenide avalanche photodiode
JP2015162576A (ja) * 2014-02-27 2015-09-07 住友電気工業株式会社 半導体光集積素子、半導体光集積素子を作製する方法
JP2017163023A (ja) * 2016-03-10 2017-09-14 株式会社東芝 光検出器およびこれを用いた被写体検知システム
JP7006588B2 (ja) * 2016-05-16 2022-01-24 ソニーグループ株式会社 受光素子、光通信装置、および受光素子の製造方法
US11909172B2 (en) * 2020-01-08 2024-02-20 Asahi Kasei Kabushiki Kaisha Method for manufacturing optical device and optical device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160189A (en) 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor luminous device incorporated with photodetector
JPS5947778A (ja) * 1982-09-10 1984-03-17 Hitachi Ltd 半導体受光素子とそれを用いたレ−ザ発振装置
JPS5996789A (ja) 1982-11-25 1984-06-04 Nec Corp 光半導体装置
JPH07123170B2 (ja) * 1990-08-07 1995-12-25 光計測技術開発株式会社 受光素子
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
JPH0582827A (ja) * 1991-09-19 1993-04-02 Nec Corp 半導体受光素子
JPH05175614A (ja) 1991-12-26 1993-07-13 Canon Inc 光半導体装置
JP2748917B2 (ja) * 1996-03-22 1998-05-13 日本電気株式会社 半導体装置
WO1998031055A1 (en) * 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JPH10321900A (ja) 1997-05-14 1998-12-04 Sumitomo Electric Ind Ltd 光モジュール
US6353250B1 (en) * 1997-11-07 2002-03-05 Nippon Telegraph And Telephone Corporation Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof
JP2000151013A (ja) 1998-11-13 2000-05-30 Furukawa Electric Co Ltd:The 光送受信集積素子
US6331379B1 (en) * 1999-09-01 2001-12-18 Micron Technology, Inc. Photo-lithography process using multiple anti-reflective coatings
US6525347B2 (en) * 2001-03-12 2003-02-25 Matsushita Electric Industrial Co., Ltd. Photodetector and unit mounted with photodetector
JP2003198032A (ja) 2001-12-27 2003-07-11 Mitsubishi Electric Corp 光素子、光素子モジュール及び光素子用キャリア
JP2003209268A (ja) * 2002-01-11 2003-07-25 Mitsubishi Electric Corp 光モジュール
JP2003303975A (ja) * 2002-04-08 2003-10-24 Opnext Japan Inc モニタ用フォトダイオード付光モジュール。
JP2004047831A (ja) * 2002-07-12 2004-02-12 Mitsubishi Electric Corp 受光素子モジュール
JP2006032567A (ja) * 2004-07-14 2006-02-02 Sanyo Electric Co Ltd 受光素子及び受光素子の製造方法
JP4755854B2 (ja) * 2005-06-02 2011-08-24 富士通株式会社 半導体受光装置及びその製造方法
DE102005025782B4 (de) * 2005-06-04 2007-02-22 Diehl Ako Stiftung & Co. Kg Berührungsempfindlicher Tastschalter
JP2007086131A (ja) 2005-09-20 2007-04-05 Konica Minolta Business Technologies Inc 電子写真感光体及び画像形成装置
JP2008010710A (ja) * 2006-06-30 2008-01-17 Oki Electric Ind Co Ltd 半導体レーザ装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP昭57-160189A 1982.10.02
JP特开2000-151013A 2000.05.30

Also Published As

Publication number Publication date
EP1976023A3 (en) 2014-03-26
JP2008244368A (ja) 2008-10-09
US7807954B2 (en) 2010-10-05
EP1976023A2 (en) 2008-10-01
CN101276028A (zh) 2008-10-01
US20080237452A1 (en) 2008-10-02
JP5197978B2 (ja) 2013-05-15
TW200845615A (en) 2008-11-16
TWI378662B (en) 2012-12-01

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