CN101266830B - 半导体存储器设备 - Google Patents
半导体存储器设备 Download PDFInfo
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- CN101266830B CN101266830B CN2008100843011A CN200810084301A CN101266830B CN 101266830 B CN101266830 B CN 101266830B CN 2008100843011 A CN2008100843011 A CN 2008100843011A CN 200810084301 A CN200810084301 A CN 200810084301A CN 101266830 B CN101266830 B CN 101266830B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000004044 response Effects 0.000 claims abstract description 6
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 99
- 230000004913 activation Effects 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 description 19
- 101150070189 CIN3 gene Proteins 0.000 description 12
- 101150110971 CIN7 gene Proteins 0.000 description 11
- 101150110298 INV1 gene Proteins 0.000 description 11
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 11
- 230000003111 delayed effect Effects 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
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- 238000004519 manufacturing process Methods 0.000 description 2
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- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/227—Timing of memory operations based on dummy memory elements or replica circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007066701A JP4992494B2 (ja) | 2007-03-15 | 2007-03-15 | 半導体記憶装置 |
JP2007-066701 | 2007-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101266830A CN101266830A (zh) | 2008-09-17 |
CN101266830B true CN101266830B (zh) | 2012-10-10 |
Family
ID=39494604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100843011A Active CN101266830B (zh) | 2007-03-15 | 2008-03-17 | 半导体存储器设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7593275B2 (zh) |
EP (1) | EP1970910B1 (zh) |
JP (1) | JP4992494B2 (zh) |
KR (1) | KR100947522B1 (zh) |
CN (1) | CN101266830B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7646658B2 (en) * | 2007-05-31 | 2010-01-12 | Qualcomm Incorporated | Memory device with delay tracking for improved timing margin |
JP5328386B2 (ja) * | 2009-01-15 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその動作方法 |
US20130201014A1 (en) * | 2010-12-09 | 2013-08-08 | Alexander Luchinskiy | Method and Device for Indicating of the Turn-Intention of a Vehicle |
JP5655555B2 (ja) | 2010-12-27 | 2015-01-21 | 富士通セミコンダクター株式会社 | メモリインターフェース回路、メモリインターフェース方法、および電子機器 |
US8811109B2 (en) | 2012-02-27 | 2014-08-19 | Qualcomm Incorporated | Memory pre-decoder circuits employing pulse latch(es) for reducing memory access times, and related systems and methods |
CN103219036A (zh) * | 2012-12-21 | 2013-07-24 | 西安华芯半导体有限公司 | 一个可调整的静态随机存储器自定时电路 |
US10922465B2 (en) * | 2018-09-27 | 2021-02-16 | Arm Limited | Multi-input logic circuitry |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6392957B1 (en) * | 2000-11-28 | 2002-05-21 | Virage Logic Corporation | Fast read/write cycle memory device having a self-timed read/write control circuit |
CN1523608A (zh) * | 2003-01-16 | 2004-08-25 | 松下电器产业株式会社 | 半导体存储器件 |
US20050207239A1 (en) * | 2004-03-18 | 2005-09-22 | Fujitsu Limited | Semiconductor memory device and timing control method |
US20050278594A1 (en) * | 2004-06-15 | 2005-12-15 | Osamu Hirabayashi | Semiconductor memory device having ECC circuit |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188698A (ja) * | 1992-12-16 | 1994-07-08 | Sharp Corp | 遅延回路およびこの遅延回路を用いた波形整形回路 |
GB2314709B (en) * | 1996-06-24 | 2000-06-28 | Hyundai Electronics Ind | Skew logic circuit device |
US6611465B2 (en) * | 2000-02-02 | 2003-08-26 | Broadcom Corporation | Diffusion replica delay circuit |
JP2001273777A (ja) * | 2000-03-29 | 2001-10-05 | Kawasaki Steel Corp | 半導体メモリ |
JP2002197868A (ja) * | 2000-12-22 | 2002-07-12 | Kawasaki Microelectronics Kk | 半導体記憶装置 |
US6707331B1 (en) * | 2002-07-19 | 2004-03-16 | Xilinx, Inc. | High speed one-shot circuit with optional correction for process shift |
JP2005267774A (ja) * | 2004-03-19 | 2005-09-29 | Konica Minolta Photo Imaging Inc | 記録プログラム |
JP2006004463A (ja) * | 2004-06-15 | 2006-01-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP4472449B2 (ja) * | 2004-07-12 | 2010-06-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置および半導体記憶装置の制御方法 |
JP2007066701A (ja) | 2005-08-31 | 2007-03-15 | Optrex Corp | 面発光装置および液晶表示装置 |
-
2007
- 2007-03-15 JP JP2007066701A patent/JP4992494B2/ja active Active
-
2008
- 2008-03-10 KR KR1020080021933A patent/KR100947522B1/ko active IP Right Grant
- 2008-03-11 EP EP08152570A patent/EP1970910B1/en not_active Expired - Fee Related
- 2008-03-12 US US12/046,783 patent/US7593275B2/en active Active
- 2008-03-17 CN CN2008100843011A patent/CN101266830B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6392957B1 (en) * | 2000-11-28 | 2002-05-21 | Virage Logic Corporation | Fast read/write cycle memory device having a self-timed read/write control circuit |
CN1523608A (zh) * | 2003-01-16 | 2004-08-25 | 松下电器产业株式会社 | 半导体存储器件 |
US20050207239A1 (en) * | 2004-03-18 | 2005-09-22 | Fujitsu Limited | Semiconductor memory device and timing control method |
US20050278594A1 (en) * | 2004-06-15 | 2005-12-15 | Osamu Hirabayashi | Semiconductor memory device having ECC circuit |
Also Published As
Publication number | Publication date |
---|---|
US7593275B2 (en) | 2009-09-22 |
EP1970910A1 (en) | 2008-09-17 |
JP4992494B2 (ja) | 2012-08-08 |
KR100947522B1 (ko) | 2010-03-12 |
KR20080084631A (ko) | 2008-09-19 |
EP1970910B1 (en) | 2011-06-08 |
JP2008226404A (ja) | 2008-09-25 |
US20080225612A1 (en) | 2008-09-18 |
CN101266830A (zh) | 2008-09-17 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081024 |
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Effective date of registration: 20081024 Address after: Tokyo, Japan, Japan Applicant after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
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Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150514 |
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Effective date of registration: 20150514 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Kanagawa Patentee before: Fujitsu Semiconductor Co., Ltd. |