CN101213642B - 金属膜的薄膜沉积方法和薄膜沉积装置 - Google Patents

金属膜的薄膜沉积方法和薄膜沉积装置 Download PDF

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Publication number
CN101213642B
CN101213642B CN2006800235759A CN200680023575A CN101213642B CN 101213642 B CN101213642 B CN 101213642B CN 2006800235759 A CN2006800235759 A CN 2006800235759A CN 200680023575 A CN200680023575 A CN 200680023575A CN 101213642 B CN101213642 B CN 101213642B
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China
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processed
plasma
thin film
film deposition
metal
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Chinese (zh)
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CN101213642A (zh
Inventor
池田太郎
水泽宁
波多野达夫
横山敦
佐久间隆
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2006800235759A 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置 Withdrawn - After Issue CN101213642B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP188107/2005 2005-06-28
JP2005188107 2005-06-28
JP277044/2005 2005-09-26
JP2005277044A JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置
PCT/JP2006/312890 WO2007001022A1 (ja) 2005-06-28 2006-06-28 金属膜の成膜方法及び成膜装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010102440281A Division CN101914752B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

Publications (2)

Publication Number Publication Date
CN101213642A CN101213642A (zh) 2008-07-02
CN101213642B true CN101213642B (zh) 2010-09-29

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CN2006800235759A Withdrawn - After Issue CN101213642B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置
CN2010102440281A Expired - Fee Related CN101914752B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

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Country Status (6)

Country Link
US (1) US8029873B2 (enExample)
JP (1) JP4830421B2 (enExample)
KR (1) KR101291917B1 (enExample)
CN (2) CN101213642B (enExample)
TW (1) TWI430369B (enExample)
WO (1) WO2007001022A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194549B2 (ja) 2007-04-27 2013-05-08 富士通セミコンダクター株式会社 半導体装置の製造方法
TWI419280B (zh) * 2009-01-16 2013-12-11 Univ Nat Taiwan 防止金屬遷移的電子封裝件
JP5025679B2 (ja) * 2009-03-27 2012-09-12 株式会社東芝 半導体装置
JP2011119330A (ja) * 2009-12-01 2011-06-16 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8847321B2 (en) * 2010-03-05 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Cascode CMOS structure
US8252680B2 (en) * 2010-09-24 2012-08-28 Intel Corporation Methods and architectures for bottomless interconnect vias
US9125333B2 (en) * 2011-07-15 2015-09-01 Tessera, Inc. Electrical barrier layers
JP5569561B2 (ja) * 2012-06-18 2014-08-13 富士通セミコンダクター株式会社 半導体装置の製造方法
CN103489900B (zh) * 2013-09-04 2016-05-04 京东方科技集团股份有限公司 一种阻挡层及其制备方法、薄膜晶体管、阵列基板
JP5817856B2 (ja) * 2014-01-27 2015-11-18 富士通セミコンダクター株式会社 半導体装置
JP6282474B2 (ja) * 2014-01-31 2018-02-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9795038B2 (en) * 2014-09-25 2017-10-17 Intel Corporation Electronic package design that facilitates shipping the electronic package
JP6472551B2 (ja) * 2018-01-24 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置
JP6640391B2 (ja) * 2019-01-22 2020-02-05 ルネサスエレクトロニクス株式会社 半導体装置
CN109652761B (zh) * 2019-01-30 2021-01-26 惠科股份有限公司 镀膜方法及镀膜装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate

Citations (2)

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Publication number Priority date Publication date Assignee Title
US5968327A (en) * 1997-04-14 1999-10-19 Anelva Corporation Ionizing sputter device using a coil shield
CN1200461C (zh) * 2001-10-19 2005-05-04 恩益禧电子股份有限公司 半导体器件及其制造方法

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US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
JP2000077365A (ja) 1998-08-29 2000-03-14 Tokyo Electron Ltd 研磨スラリー及び研磨方法
JP4242136B2 (ja) * 2002-10-31 2009-03-18 富士通マイクロエレクトロニクス株式会社 配線構造の形成方法
US6949461B2 (en) * 2002-12-11 2005-09-27 International Business Machines Corporation Method for depositing a metal layer on a semiconductor interconnect structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968327A (en) * 1997-04-14 1999-10-19 Anelva Corporation Ionizing sputter device using a coil shield
CN1200461C (zh) * 2001-10-19 2005-05-04 恩益禧电子股份有限公司 半导体器件及其制造方法

Also Published As

Publication number Publication date
CN101213642A (zh) 2008-07-02
WO2007001022A1 (ja) 2007-01-04
CN101914752B (zh) 2012-07-04
TW200715412A (en) 2007-04-16
CN101914752A (zh) 2010-12-15
TWI430369B (zh) 2014-03-11
JP4830421B2 (ja) 2011-12-07
JP2007043038A (ja) 2007-02-15
US20090227104A1 (en) 2009-09-10
KR20080022221A (ko) 2008-03-10
US8029873B2 (en) 2011-10-04
KR101291917B1 (ko) 2013-07-31

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