JP4830421B2 - 金属膜の成膜方法及び成膜装置 - Google Patents

金属膜の成膜方法及び成膜装置 Download PDF

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Publication number
JP4830421B2
JP4830421B2 JP2005277044A JP2005277044A JP4830421B2 JP 4830421 B2 JP4830421 B2 JP 4830421B2 JP 2005277044 A JP2005277044 A JP 2005277044A JP 2005277044 A JP2005277044 A JP 2005277044A JP 4830421 B2 JP4830421 B2 JP 4830421B2
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Japan
Prior art keywords
film
recess
plasma
metal
processed
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Expired - Fee Related
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JP2005277044A
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English (en)
Japanese (ja)
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JP2007043038A (ja
JP2007043038A5 (enExample
Inventor
太郎 池田
寧 水澤
達夫 波多野
敦 横山
隆 佐久間
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2005277044A priority Critical patent/JP4830421B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW095123396A priority patent/TWI430369B/zh
Priority to CN2006800235759A priority patent/CN101213642B/zh
Priority to PCT/JP2006/312890 priority patent/WO2007001022A1/ja
Priority to KR1020087002231A priority patent/KR101291917B1/ko
Priority to US11/922,918 priority patent/US8029873B2/en
Priority to CN2010102440281A priority patent/CN101914752B/zh
Publication of JP2007043038A publication Critical patent/JP2007043038A/ja
Publication of JP2007043038A5 publication Critical patent/JP2007043038A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005277044A 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置 Expired - Fee Related JP4830421B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005277044A JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置
CN2006800235759A CN101213642B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置
PCT/JP2006/312890 WO2007001022A1 (ja) 2005-06-28 2006-06-28 金属膜の成膜方法及び成膜装置
KR1020087002231A KR101291917B1 (ko) 2005-06-28 2006-06-28 금속막의 성막 방법 및 성막 장치
TW095123396A TWI430369B (zh) 2005-06-28 2006-06-28 Metal film forming method
US11/922,918 US8029873B2 (en) 2005-06-28 2006-06-28 Film deposition method and film deposition apparatus of metal film
CN2010102440281A CN101914752B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005188107 2005-06-28
JP2005188107 2005-06-28
JP2005277044A JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置

Publications (3)

Publication Number Publication Date
JP2007043038A JP2007043038A (ja) 2007-02-15
JP2007043038A5 JP2007043038A5 (enExample) 2008-06-19
JP4830421B2 true JP4830421B2 (ja) 2011-12-07

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Application Number Title Priority Date Filing Date
JP2005277044A Expired - Fee Related JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置

Country Status (6)

Country Link
US (1) US8029873B2 (enExample)
JP (1) JP4830421B2 (enExample)
KR (1) KR101291917B1 (enExample)
CN (2) CN101213642B (enExample)
TW (1) TWI430369B (enExample)
WO (1) WO2007001022A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194549B2 (ja) 2007-04-27 2013-05-08 富士通セミコンダクター株式会社 半導体装置の製造方法
TWI419280B (zh) * 2009-01-16 2013-12-11 Univ Nat Taiwan 防止金屬遷移的電子封裝件
JP5025679B2 (ja) * 2009-03-27 2012-09-12 株式会社東芝 半導体装置
JP2011119330A (ja) * 2009-12-01 2011-06-16 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8847321B2 (en) * 2010-03-05 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Cascode CMOS structure
US8252680B2 (en) * 2010-09-24 2012-08-28 Intel Corporation Methods and architectures for bottomless interconnect vias
US9125333B2 (en) * 2011-07-15 2015-09-01 Tessera, Inc. Electrical barrier layers
JP5569561B2 (ja) * 2012-06-18 2014-08-13 富士通セミコンダクター株式会社 半導体装置の製造方法
CN103489900B (zh) * 2013-09-04 2016-05-04 京东方科技集团股份有限公司 一种阻挡层及其制备方法、薄膜晶体管、阵列基板
JP5817856B2 (ja) * 2014-01-27 2015-11-18 富士通セミコンダクター株式会社 半導体装置
JP6282474B2 (ja) * 2014-01-31 2018-02-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9795038B2 (en) * 2014-09-25 2017-10-17 Intel Corporation Electronic package design that facilitates shipping the electronic package
JP6472551B2 (ja) * 2018-01-24 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置
JP6640391B2 (ja) * 2019-01-22 2020-02-05 ルネサスエレクトロニクス株式会社 半導体装置
CN109652761B (zh) * 2019-01-30 2021-01-26 惠科股份有限公司 镀膜方法及镀膜装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
JP3846970B2 (ja) * 1997-04-14 2006-11-15 キヤノンアネルバ株式会社 イオン化スパッタリング装置
JP2000077365A (ja) 1998-08-29 2000-03-14 Tokyo Electron Ltd 研磨スラリー及び研磨方法
JP3540302B2 (ja) * 2001-10-19 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4242136B2 (ja) * 2002-10-31 2009-03-18 富士通マイクロエレクトロニクス株式会社 配線構造の形成方法
US6949461B2 (en) * 2002-12-11 2005-09-27 International Business Machines Corporation Method for depositing a metal layer on a semiconductor interconnect structure

Also Published As

Publication number Publication date
CN101213642B (zh) 2010-09-29
CN101213642A (zh) 2008-07-02
WO2007001022A1 (ja) 2007-01-04
CN101914752B (zh) 2012-07-04
TW200715412A (en) 2007-04-16
CN101914752A (zh) 2010-12-15
TWI430369B (zh) 2014-03-11
JP2007043038A (ja) 2007-02-15
US20090227104A1 (en) 2009-09-10
KR20080022221A (ko) 2008-03-10
US8029873B2 (en) 2011-10-04
KR101291917B1 (ko) 2013-07-31

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