JP2007043038A5 - - Google Patents

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Publication number
JP2007043038A5
JP2007043038A5 JP2005277044A JP2005277044A JP2007043038A5 JP 2007043038 A5 JP2007043038 A5 JP 2007043038A5 JP 2005277044 A JP2005277044 A JP 2005277044A JP 2005277044 A JP2005277044 A JP 2005277044A JP 2007043038 A5 JP2007043038 A5 JP 2007043038A5
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JP
Japan
Prior art keywords
metal
film
recess
forming
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005277044A
Other languages
English (en)
Japanese (ja)
Other versions
JP4830421B2 (ja
JP2007043038A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005277044A external-priority patent/JP4830421B2/ja
Priority to JP2005277044A priority Critical patent/JP4830421B2/ja
Priority to TW095123396A priority patent/TWI430369B/zh
Priority to PCT/JP2006/312890 priority patent/WO2007001022A1/ja
Priority to KR1020087002231A priority patent/KR101291917B1/ko
Priority to CN2006800235759A priority patent/CN101213642B/zh
Priority to US11/922,918 priority patent/US8029873B2/en
Priority to CN2010102440281A priority patent/CN101914752B/zh
Publication of JP2007043038A publication Critical patent/JP2007043038A/ja
Publication of JP2007043038A5 publication Critical patent/JP2007043038A5/ja
Publication of JP4830421B2 publication Critical patent/JP4830421B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005277044A 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置 Expired - Fee Related JP4830421B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005277044A JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置
CN2006800235759A CN101213642B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置
PCT/JP2006/312890 WO2007001022A1 (ja) 2005-06-28 2006-06-28 金属膜の成膜方法及び成膜装置
KR1020087002231A KR101291917B1 (ko) 2005-06-28 2006-06-28 금속막의 성막 방법 및 성막 장치
TW095123396A TWI430369B (zh) 2005-06-28 2006-06-28 Metal film forming method
US11/922,918 US8029873B2 (en) 2005-06-28 2006-06-28 Film deposition method and film deposition apparatus of metal film
CN2010102440281A CN101914752B (zh) 2005-06-28 2006-06-28 金属膜的薄膜沉积方法和薄膜沉积装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005188107 2005-06-28
JP2005188107 2005-06-28
JP2005277044A JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置

Publications (3)

Publication Number Publication Date
JP2007043038A JP2007043038A (ja) 2007-02-15
JP2007043038A5 true JP2007043038A5 (enExample) 2008-06-19
JP4830421B2 JP4830421B2 (ja) 2011-12-07

Family

ID=37595271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005277044A Expired - Fee Related JP4830421B2 (ja) 2005-06-28 2005-09-26 金属膜の成膜方法及び成膜装置

Country Status (6)

Country Link
US (1) US8029873B2 (enExample)
JP (1) JP4830421B2 (enExample)
KR (1) KR101291917B1 (enExample)
CN (2) CN101213642B (enExample)
TW (1) TWI430369B (enExample)
WO (1) WO2007001022A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194549B2 (ja) 2007-04-27 2013-05-08 富士通セミコンダクター株式会社 半導体装置の製造方法
TWI419280B (zh) * 2009-01-16 2013-12-11 Univ Nat Taiwan 防止金屬遷移的電子封裝件
JP5025679B2 (ja) * 2009-03-27 2012-09-12 株式会社東芝 半導体装置
JP2011119330A (ja) * 2009-12-01 2011-06-16 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8847321B2 (en) * 2010-03-05 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Cascode CMOS structure
US8252680B2 (en) * 2010-09-24 2012-08-28 Intel Corporation Methods and architectures for bottomless interconnect vias
US9125333B2 (en) * 2011-07-15 2015-09-01 Tessera, Inc. Electrical barrier layers
JP5569561B2 (ja) * 2012-06-18 2014-08-13 富士通セミコンダクター株式会社 半導体装置の製造方法
CN103489900B (zh) * 2013-09-04 2016-05-04 京东方科技集团股份有限公司 一种阻挡层及其制备方法、薄膜晶体管、阵列基板
JP5817856B2 (ja) * 2014-01-27 2015-11-18 富士通セミコンダクター株式会社 半導体装置
JP6282474B2 (ja) * 2014-01-31 2018-02-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9795038B2 (en) * 2014-09-25 2017-10-17 Intel Corporation Electronic package design that facilitates shipping the electronic package
JP6472551B2 (ja) * 2018-01-24 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置
JP6640391B2 (ja) * 2019-01-22 2020-02-05 ルネサスエレクトロニクス株式会社 半導体装置
CN109652761B (zh) * 2019-01-30 2021-01-26 惠科股份有限公司 镀膜方法及镀膜装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
JP3846970B2 (ja) * 1997-04-14 2006-11-15 キヤノンアネルバ株式会社 イオン化スパッタリング装置
JP2000077365A (ja) 1998-08-29 2000-03-14 Tokyo Electron Ltd 研磨スラリー及び研磨方法
JP3540302B2 (ja) * 2001-10-19 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4242136B2 (ja) * 2002-10-31 2009-03-18 富士通マイクロエレクトロニクス株式会社 配線構造の形成方法
US6949461B2 (en) * 2002-12-11 2005-09-27 International Business Machines Corporation Method for depositing a metal layer on a semiconductor interconnect structure

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