CN101188140B - 包括双极晶体管存取装置的电阻式存储器及其制造方法 - Google Patents
包括双极晶体管存取装置的电阻式存储器及其制造方法 Download PDFInfo
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- CN101188140B CN101188140B CN2007101875119A CN200710187511A CN101188140B CN 101188140 B CN101188140 B CN 101188140B CN 2007101875119 A CN2007101875119 A CN 2007101875119A CN 200710187511 A CN200710187511 A CN 200710187511A CN 101188140 B CN101188140 B CN 101188140B
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- bipolar transistor
- phase
- memory element
- resistive memory
- change element
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- 238000000034 method Methods 0.000 title claims description 16
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- 230000009466 transformation Effects 0.000 description 2
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (35)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/602,720 | 2006-11-21 | ||
US11/602,720 US7436695B2 (en) | 2006-11-21 | 2006-11-21 | Resistive memory including bipolar transistor access devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101188140A CN101188140A (zh) | 2008-05-28 |
CN101188140B true CN101188140B (zh) | 2010-07-21 |
Family
ID=39156484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101875119A Expired - Fee Related CN101188140B (zh) | 2006-11-21 | 2007-11-21 | 包括双极晶体管存取装置的电阻式存储器及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7436695B2 (zh) |
EP (1) | EP1927991B1 (zh) |
JP (1) | JP2008234813A (zh) |
KR (1) | KR20080046123A (zh) |
CN (1) | CN101188140B (zh) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
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US7619936B2 (en) * | 2006-11-16 | 2009-11-17 | Qimonda North America Corp. | System that prevents reduction in data retention |
US8085615B2 (en) | 2006-12-29 | 2011-12-27 | Spansion Llc | Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line |
US7755922B2 (en) * | 2006-12-29 | 2010-07-13 | Spansion Llc | Non-volatile resistance changing for advanced memory applications |
US7800093B2 (en) * | 2007-02-01 | 2010-09-21 | Qimonda North America Corp. | Resistive memory including buried word lines |
US7847338B2 (en) | 2007-10-24 | 2010-12-07 | Yuniarto Widjaja | Semiconductor memory having both volatile and non-volatile functionality and method of operating |
US8362821B2 (en) * | 2007-11-22 | 2013-01-29 | Nxp B.V. | Charge carrier stream generating electronic device and method |
US7985959B2 (en) * | 2008-07-11 | 2011-07-26 | Intel Corporation | Self-aligned vertical bipolar junction transistor for phase change memories |
JP4606520B2 (ja) * | 2009-03-25 | 2011-01-05 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
US8139391B2 (en) * | 2009-04-03 | 2012-03-20 | Sandisk 3D Llc | Multi-bit resistance-switching memory cell |
US8270199B2 (en) * | 2009-04-03 | 2012-09-18 | Sandisk 3D Llc | Cross point non-volatile memory cell |
US7978498B2 (en) * | 2009-04-03 | 2011-07-12 | Sandisk 3D, Llc | Programming non-volatile storage element using current from other element |
US8233309B2 (en) * | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
KR20110061912A (ko) * | 2009-12-02 | 2011-06-10 | 삼성전자주식회사 | 비휘발성 메모리 셀 및 이를 포함하는 비휘발성 메모리 장치 |
KR20110074354A (ko) * | 2009-12-24 | 2011-06-30 | 삼성전자주식회사 | 메모리소자 및 그 동작방법 |
US9064571B2 (en) * | 2010-03-30 | 2015-06-23 | International Business Machines Corporation | Programming at least one multi-level phase change memory cell |
US9224496B2 (en) | 2010-08-11 | 2015-12-29 | Shine C. Chung | Circuit and system of aggregated area anti-fuse in CMOS processes |
US9824768B2 (en) | 2015-03-22 | 2017-11-21 | Attopsemi Technology Co., Ltd | Integrated OTP memory for providing MTP memory |
US9019742B2 (en) | 2010-08-20 | 2015-04-28 | Shine C. Chung | Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory |
US9460807B2 (en) | 2010-08-20 | 2016-10-04 | Shine C. Chung | One-time programmable memory devices using FinFET technology |
US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
US8804398B2 (en) | 2010-08-20 | 2014-08-12 | Shine C. Chung | Reversible resistive memory using diodes formed in CMOS processes as program selectors |
US9236141B2 (en) | 2010-08-20 | 2016-01-12 | Shine C. Chung | Circuit and system of using junction diode of MOS as program selector for programmable resistive devices |
US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
US8644049B2 (en) | 2010-08-20 | 2014-02-04 | Shine C. Chung | Circuit and system of using polysilicon diode as program selector for one-time programmable devices |
US9070437B2 (en) | 2010-08-20 | 2015-06-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink |
US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
US9431127B2 (en) | 2010-08-20 | 2016-08-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices |
US8830720B2 (en) | 2010-08-20 | 2014-09-09 | Shine C. Chung | Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices |
US9496033B2 (en) | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
US9042153B2 (en) | 2010-08-20 | 2015-05-26 | Shine C. Chung | Programmable resistive memory unit with multiple cells to improve yield and reliability |
US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
US9711237B2 (en) | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
US8488359B2 (en) | 2010-08-20 | 2013-07-16 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices |
US9025357B2 (en) | 2010-08-20 | 2015-05-05 | Shine C. Chung | Programmable resistive memory unit with data and reference cells |
US9251893B2 (en) | 2010-08-20 | 2016-02-02 | Shine C. Chung | Multiple-bit programmable resistive memory using diode as program selector |
TWI462107B (zh) * | 2010-08-20 | 2014-11-21 | Chien Shine Chung | 電子系統、記憶體及其提供方法 |
JP2012089741A (ja) * | 2010-10-21 | 2012-05-10 | Toshiba Corp | 抵抗変化型メモリ |
US9019791B2 (en) | 2010-11-03 | 2015-04-28 | Shine C. Chung | Low-pin-count non-volatile memory interface for 3D IC |
US8988965B2 (en) | 2010-11-03 | 2015-03-24 | Shine C. Chung | Low-pin-count non-volatile memory interface |
US8923085B2 (en) | 2010-11-03 | 2014-12-30 | Shine C. Chung | Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access |
US8913449B2 (en) | 2012-03-11 | 2014-12-16 | Shine C. Chung | System and method of in-system repairs or configurations for memories |
US8582359B2 (en) * | 2010-11-16 | 2013-11-12 | Zeno Semiconductor, Inc. | Dual-port semiconductor memory and first-in first-out (FIFO) memory having electrically floating body transistor |
CN102544011A (zh) | 2010-12-08 | 2012-07-04 | 庄建祥 | 反熔丝存储器及电子系统 |
US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
US9324849B2 (en) | 2011-11-15 | 2016-04-26 | Shine C. Chung | Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC |
US9136261B2 (en) | 2011-11-15 | 2015-09-15 | Shine C. Chung | Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection |
US8912576B2 (en) | 2011-11-15 | 2014-12-16 | Shine C. Chung | Structures and techniques for using semiconductor body to construct bipolar junction transistors |
US8917533B2 (en) | 2012-02-06 | 2014-12-23 | Shine C. Chung | Circuit and system for testing a one-time programmable (OTP) memory |
US8861249B2 (en) | 2012-02-06 | 2014-10-14 | Shine C. Chung | Circuit and system of a low density one-time programmable memory |
US9007804B2 (en) | 2012-02-06 | 2015-04-14 | Shine C. Chung | Circuit and system of protective mechanisms for programmable resistive memories |
US9076526B2 (en) | 2012-09-10 | 2015-07-07 | Shine C. Chung | OTP memories functioning as an MTP memory |
US9183897B2 (en) | 2012-09-30 | 2015-11-10 | Shine C. Chung | Circuits and methods of a self-timed high speed SRAM |
US9324447B2 (en) | 2012-11-20 | 2016-04-26 | Shine C. Chung | Circuit and system for concurrently programming multiple bits of OTP memory devices |
CN104659203B (zh) * | 2013-11-21 | 2018-01-05 | 华邦电子股份有限公司 | 电阻式存储元件及其操作方法 |
KR102154076B1 (ko) | 2014-04-10 | 2020-09-10 | 에스케이하이닉스 주식회사 | 전자 장치 |
KR20150124033A (ko) | 2014-04-25 | 2015-11-05 | 에스케이하이닉스 주식회사 | 전자 장치 |
US9412473B2 (en) | 2014-06-16 | 2016-08-09 | Shine C. Chung | System and method of a novel redundancy scheme for OTP |
US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
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EP1450373A1 (en) * | 2003-02-21 | 2004-08-25 | STMicroelectronics S.r.l. | Phase change memory device |
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DE102004026003B3 (de) * | 2004-05-27 | 2006-01-19 | Infineon Technologies Ag | Resistive Speicherzellen-Anordnung |
KR101118652B1 (ko) * | 2004-12-17 | 2012-03-07 | 삼성전자주식회사 | 씨모스 공정과 통합될 수 있는 높은 이득을 갖는 바이폴라접합 트랜지스터 및 그 형성 방법 |
TWI261356B (en) * | 2005-01-03 | 2006-09-01 | Macronix Int Co Ltd | Phase-change multi-level cell and operating method thereof |
JP4646634B2 (ja) * | 2005-01-05 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8653495B2 (en) * | 2005-04-11 | 2014-02-18 | Micron Technology, Inc. | Heating phase change material |
-
2006
- 2006-11-21 US US11/602,720 patent/US7436695B2/en not_active Expired - Fee Related
-
2007
- 2007-11-19 EP EP07022409.2A patent/EP1927991B1/en not_active Expired - Fee Related
- 2007-11-20 JP JP2007300593A patent/JP2008234813A/ja active Pending
- 2007-11-21 KR KR1020070119020A patent/KR20080046123A/ko not_active Application Discontinuation
- 2007-11-21 CN CN2007101875119A patent/CN101188140B/zh not_active Expired - Fee Related
Patent Citations (3)
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US6697294B1 (en) * | 2001-02-23 | 2004-02-24 | Western Digital (Fremont), Inc. | Designs of reference cells for magnetic tunnel junction (MTJ) MRAM |
US7050328B2 (en) * | 2001-12-27 | 2006-05-23 | Stmicroelectronics S.R.L. | Phase change memory device |
EP1450373A1 (en) * | 2003-02-21 | 2004-08-25 | STMicroelectronics S.r.l. | Phase change memory device |
Also Published As
Publication number | Publication date |
---|---|
US20080117667A1 (en) | 2008-05-22 |
KR20080046123A (ko) | 2008-05-26 |
EP1927991A3 (en) | 2009-09-02 |
US7436695B2 (en) | 2008-10-14 |
CN101188140A (zh) | 2008-05-28 |
EP1927991B1 (en) | 2014-05-07 |
JP2008234813A (ja) | 2008-10-02 |
EP1927991A2 (en) | 2008-06-04 |
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