CN101180923B - 气体放电源，特别是euv辐射 - Google Patents

气体放电源，特别是euv辐射 Download PDF

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Publication number
CN101180923B
CN101180923B CN200680017282XA CN200680017282A CN101180923B CN 101180923 B CN101180923 B CN 101180923B CN 200680017282X A CN200680017282X A CN 200680017282XA CN 200680017282 A CN200680017282 A CN 200680017282A CN 101180923 B CN101180923 B CN 101180923B
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China
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electrode
liquid
gas
slit
electrodes
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Chinese (zh)
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CN101180923A (zh
Inventor
J·W·内夫
R·普鲁默
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Ushio Denki KK
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Luminescent Compositions (AREA)
CN200680017282XA 2005-05-19 2006-05-08 气体放电源，特别是euv辐射 Active CN101180923B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005023060A DE102005023060B4 (de) 2005-05-19 2005-05-19 Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung
DE102005023060.1 2005-05-19
PCT/IB2006/051428 WO2006123270A2 (en) 2005-05-19 2006-05-08 Gas discharge source, in particular for euv radiation

Publications (2)

Publication Number Publication Date
CN101180923A CN101180923A (zh) 2008-05-14
CN101180923B true CN101180923B (zh) 2011-12-14

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CN200680017282XA Active CN101180923B (zh) 2005-05-19 2006-05-08 气体放电源，特别是euv辐射

Country Status (8)

Country Link
US (1) US7630475B2 (enExample)
EP (1) EP1886542B1 (enExample)
JP (1) JP4879974B2 (enExample)
KR (1) KR101214136B1 (enExample)
CN (1) CN101180923B (enExample)
AT (1) ATE464776T1 (enExample)
DE (2) DE102005023060B4 (enExample)
WO (1) WO2006123270A2 (enExample)

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US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US7696493B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
DE102007004440B4 (de) * 2007-01-25 2011-05-12 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung mittels einer elektrisch betriebenen Gasentladung
JP5149514B2 (ja) * 2007-02-20 2013-02-20 ギガフォトン株式会社 極端紫外光源装置
US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
US7629593B2 (en) * 2007-06-28 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, radiation system, device manufacturing method, and radiation generating method
CN101796893B (zh) 2007-09-07 2013-02-06 皇家飞利浦电子股份有限公司 用于气体放电源的电极设备以及操作具有电极设备的气体放电源的方法
CN101796892B (zh) * 2007-09-07 2013-02-06 皇家飞利浦电子股份有限公司 用于以高功率操作的包括轮盖的气体放电源的转轮式电极装置
JP2010541155A (ja) * 2007-10-01 2010-12-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高圧電気接続線
JP4952513B2 (ja) * 2007-10-31 2012-06-13 ウシオ電機株式会社 極端紫外光光源装置
WO2009077943A1 (en) * 2007-12-14 2009-06-25 Philips Intellectual Property & Standards Gmbh Method for laser-based plasma production and radiation source, in particular for euv radiation
DE102007060807B4 (de) 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
NL1036595A1 (nl) * 2008-02-28 2009-08-31 Asml Netherlands Bv Device constructed and arranged to generate radiation, lithographic apparatus, and device manufacturing method.
ATE528694T1 (de) * 2008-07-18 2011-10-15 Koninkl Philips Electronics Nv Vorrichtung zur erzeugung von extremer uv- strahlung mit einem kontaminationsfänger und verfahren zur reinigung von zinn in einer solchen vorrichtung
EP2170021B1 (en) 2008-09-25 2015-11-04 ASML Netherlands B.V. Source module, radiation source and lithographic apparatus
JP4623192B2 (ja) * 2008-09-29 2011-02-02 ウシオ電機株式会社 極端紫外光光源装置および極端紫外光発生方法
JP5245857B2 (ja) * 2009-01-21 2013-07-24 ウシオ電機株式会社 極端紫外光光源装置
JP5504673B2 (ja) * 2009-03-30 2014-05-28 ウシオ電機株式会社 極端紫外光光源装置
JP5896910B2 (ja) * 2009-10-29 2016-03-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． ガス放電光源用の電極システム
EP2555598A1 (en) * 2011-08-05 2013-02-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for generating optical radiation by means of electrically operated pulsed discharges
JP2014533420A (ja) * 2011-11-15 2014-12-11 エーエスエムエル ネザーランズ ビー．ブイ． 放射源デバイス、リソグラフィ装置、および、デバイス製造方法
DE102012109809B3 (de) * 2012-10-15 2013-12-12 Xtreme Technologies Gmbh Vorrichtung zur Erzeugung von kurzwelliger elektromagnetischer Strahlung auf Basis eines Gasentladungsplasmas
DE102013103668B4 (de) * 2013-04-11 2016-02-25 Ushio Denki Kabushiki Kaisha Anordnung zum Handhaben eines flüssigen Metalls zur Kühlung von umlaufenden Komponenten einer Strahlungsquelle auf Basis eines strahlungsemittierenden Plasmas
DE102013109048A1 (de) * 2013-08-21 2015-02-26 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Kühlung von Strahlungsquellen auf Basis eines Plasmas
DE102013017655B4 (de) * 2013-10-18 2017-01-05 Ushio Denki Kabushiki Kaisha Anordnung und Verfahren zum Kühlen einer plasmabasierten Strahlungsquelle
DE102014102720B4 (de) 2014-02-28 2017-03-23 Ushio Denki Kabushiki Kaisha Anordnung zum Kühlen einer plasmabasierten Strahlungsquelle mit einer metallischen Kühlflüssigkeit und Verfahren zur Inbetriebnahme einer solchen Kühlanordnung
US10021773B2 (en) * 2015-11-16 2018-07-10 Kla-Tencor Corporation Laser produced plasma light source having a target material coated on a cylindrically-symmetric element
CN111263577B (zh) * 2018-12-03 2024-10-01 北京梦之墨科技有限公司 一种具有电磁屏蔽性能的旋转结构
US11596048B2 (en) * 2019-09-23 2023-02-28 Kla Corporation Rotating lamp for laser-sustained plasma illumination source
JP7626009B2 (ja) * 2021-08-30 2025-02-04 ウシオ電機株式会社 放電プラズマ生成ユニット、及びそれを搭載した光源装置
CN113960019A (zh) * 2021-10-26 2022-01-21 天津大学 一种双转盘电极原子发射光谱油液元素装置
KR20250109087A (ko) 2024-01-09 2025-07-16 한국표준과학연구원 레이저 생성 플라즈마를 사용하는 극자외선 발생 장치 및 방법

Citations (1)

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CN1500369A (zh) * 2001-04-06 2004-05-26 ���Ͷ�����ʵ���о��ٽ�Э�� 用于产生远紫外线辐射或软x射线辐射的方法和装置

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EP1401248B1 (en) * 2002-09-19 2012-07-25 ASML Netherlands B.V. Radiation source, lithographic apparatus, and device manufacturing method
US7528395B2 (en) * 2002-09-19 2009-05-05 Asml Netherlands B.V. Radiation source, lithographic apparatus and device manufacturing method
US6977383B2 (en) 2003-01-02 2005-12-20 Jmar Research, Inc. Method and apparatus for generating a membrane target for laser produced plasma
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
RU2278483C2 (ru) * 2004-04-14 2006-06-20 Владимир Михайлович Борисов Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы
US7501642B2 (en) * 2005-12-29 2009-03-10 Asml Netherlands B.V. Radiation source

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CN1500369A (zh) * 2001-04-06 2004-05-26 ���Ͷ�����ʵ���о��ٽ�Э�� 用于产生远紫外线辐射或软x射线辐射的方法和装置

Non-Patent Citations (2)

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Joseph Pankert, Rolf Apetz, Klaus Bergmann, et. al..Integrating Philips’ extreme UV source in the alpha-tools.《Proceedings of SPIE》.2005,第5751卷全文. *
Vladimir M Borisov,Aleksander V Eltsov,Aleksander S Ivanov,et.al.EUV sources using Xe and Sn discharge plasmas.《Journal of Physics D: Applied Physics》.2004,第37卷全文. *

Also Published As

Publication number Publication date
DE102005023060A1 (de) 2006-11-30
ATE464776T1 (de) 2010-04-15
US20080187105A1 (en) 2008-08-07
EP1886542A2 (en) 2008-02-13
DE102005023060B4 (de) 2011-01-27
KR20080043740A (ko) 2008-05-19
DE602006013621D1 (de) 2010-05-27
JP2008541472A (ja) 2008-11-20
WO2006123270A2 (en) 2006-11-23
KR101214136B1 (ko) 2012-12-21
EP1886542B1 (en) 2010-04-14
CN101180923A (zh) 2008-05-14
JP4879974B2 (ja) 2012-02-22
WO2006123270A3 (en) 2007-03-08
US7630475B2 (en) 2009-12-08

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Address after: Holland Ian Deho Finn

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Holland Ian Deho Finn

Patentee before: Koninklijke Philips Electronics N.V.

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Effective date of registration: 20190805

Address after: Tokyo, Japan

Patentee after: USHIO DENKI Kabushiki Kaisha

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Patentee before: KONINKLIJKE PHILIPS N.V.