JP2008541472A - 特にeuv放射のための、ガス放電源 - Google Patents
特にeuv放射のための、ガス放電源 Download PDFInfo
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- JP2008541472A JP2008541472A JP2008511830A JP2008511830A JP2008541472A JP 2008541472 A JP2008541472 A JP 2008541472A JP 2008511830 A JP2008511830 A JP 2008511830A JP 2008511830 A JP2008511830 A JP 2008511830A JP 2008541472 A JP2008541472 A JP 2008541472A
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- gas discharge
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- 230000005855 radiation Effects 0.000 title claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 13
- 230000005291 magnetic effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 1
- 239000012466 permeate Substances 0.000 claims 1
- 239000011344 liquid material Substances 0.000 abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 37
- 239000002184 metal Substances 0.000 description 21
- 229910001338 liquidmetal Inorganic materials 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
Abstract
Description
2 真空チャンバ
3 回転軸
4 リザーバ
5 液体スズ
6 ガス放電
7 レーザパルス
8 破片を減少させる装置
9 金属遮蔽
10 遮蔽
11 ストリッパ
12 コンデンサバンク
13 電気供給ライン
14 加熱/冷却チャネルを有する金属ブロック
15 リザーバ
16 供給チャネル
17 戻りチャネル
18 源点
19 間隙
20 入口
21 出口
22 スズ薄膜
Claims (14)
- 特にEUV放射及び/又は軟X線放射のための、ガス放電源であって、該ガス放電源内の真空チャンバ内に、少なくともおおよそ円形の周縁を有する少なくとも2つの電極が、回転のために回転可能に取り付けられており、1つの空間位置において前記電極が、ガス放電の点火のための小さい間隔を有しており、前記電極は、各場合において、回転の間、導電性材料の液体薄膜が前記電極の前記円形周縁に渡って形を成すことができ、前記電極への電流の流れが前記リザーバを介して可能にされるような仕方で、液体の前記導電性材料のためのリザーバに接続されている、ガス放電源において、前記電極が、各場合において、接続要素を介して前記リザーバに接続されており、これにより、間隙が、各電極の円形周縁の部分的なセクションに渡って、前記電極と前記接続要素との間に形成され、前記間隙内に前記液体の、導電性材料が、前記電極の回転の間に、前記接続要素内に形成された少なくとも1つの供給チャネルを介して前記リザーバから浸透することができることを特徴とする、ガス放電源。
- 前記接続要素は、前記間隙が前記電極の回転方向に先細りにされている仕方において設計されていることを特徴とする、請求項1に記載のガス放電源。
- 前記液体の導電性材料のための少なくとも1つの戻りチャネルと、前記間隙内への前記戻りチャネルの開口とを更に有することを特徴とする、請求項1又は2に記載のガス放電源。
- 前記戻りチャネルは、浄化フィルタ又は浄化予備チャンバを介して前記リザーバに通じていることを特徴とする、請求項3に記載のガス放電源。
- 前記間隙は、前記液体の導電性材料が、前記間隙内に引き込まれる及び/又は毛管力によって前記間隙内に保持されるような仕方において寸法を決められていることを特徴とする、請求項1乃至4の何れか一項に記載のガス放電源。
- 前記間隙が前記間隙の端部において先細りにされていることを特徴とする、請求項1乃至5の何れか一項に記載のガス放電源。
- 前記間隙は、前記導電性材料の前記液体薄膜が、前記電極の前記小さい間隔の領域において、前記ガス放電に必要な前記導電性材料の蒸発される量が、各放電パルスに対して最小化されるような仕方において寸法を決められている又は成形されていることを特徴とする、請求項1乃至6の何れか一項に記載のガス放電源。
- 前記リザーバが前記接続要素内に形成されていることを特徴とする、請求項1乃至7の何れか一項に記載のガス放電源。
- 前記リザーバが、供給ラインを介して前記接続要素内の前記供給チャネルに接続されていることを特徴とする、請求項1乃至8の何れか一項に記載のガス放電源。
- 前記接続要素は、温度制御されている流体が流れることができる更なるチャネルを有していることを特徴とする、請求項1乃至9の何れか一項に記載のガス放電源。
- 前記電極は、前記回転方向に対して垂直な断面において前記円形周縁上に階段状にされた輪郭を有しており、前記2つの電極の前記輪郭は、前記電極が前記小さい間隔における前記領域内で互いに嵌合するような相補的な態様で設計されていることを特徴とする、請求項1乃至10の何れか一項に記載のガス放電源。
- 前記導電性材料が前記電極の回転方向と反対の方向に流出するのを防止する磁気装置が、設けられていることを特徴とする、請求項1乃至11の何れか一項に記載のガス放電源。
- 強磁性材料が、前記磁気装置の磁力を増幅するために、前記電極及び/又は前記接続要素の領域内に組み込まれていることを特徴とする請求項12に記載のガス放電源。
- 前記真空チャンバが、前記電極の前記小さい間隔の前記領域以内に、前記液体薄膜の材料を蒸発させるためのエネルギ放射の導入を可能にする開口を有していることを特徴とする、請求項1乃至13の何れか一項に記載のガス放電源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005023060.1 | 2005-05-19 | ||
DE102005023060A DE102005023060B4 (de) | 2005-05-19 | 2005-05-19 | Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung |
PCT/IB2006/051428 WO2006123270A2 (en) | 2005-05-19 | 2006-05-08 | Gas discharge source, in particular for euv radiation |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008541472A true JP2008541472A (ja) | 2008-11-20 |
JP2008541472A5 JP2008541472A5 (ja) | 2009-06-25 |
JP4879974B2 JP4879974B2 (ja) | 2012-02-22 |
Family
ID=36933632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008511830A Active JP4879974B2 (ja) | 2005-05-19 | 2006-05-08 | 特にeuv放射のための、ガス放電源 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7630475B2 (ja) |
EP (1) | EP1886542B1 (ja) |
JP (1) | JP4879974B2 (ja) |
KR (1) | KR101214136B1 (ja) |
CN (1) | CN101180923B (ja) |
AT (1) | ATE464776T1 (ja) |
DE (2) | DE102005023060B4 (ja) |
WO (1) | WO2006123270A2 (ja) |
Cited By (7)
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JP2009010389A (ja) * | 2007-06-28 | 2009-01-15 | Asml Netherlands Bv | リソグラフィ装置、放射システム、デバイス製造方法、及び放射生成方法 |
JP2009111298A (ja) * | 2007-10-31 | 2009-05-21 | Ushio Inc | 極端紫外光光源装置 |
JP2010080362A (ja) * | 2008-09-29 | 2010-04-08 | Ushio Inc | 極端紫外光光源装置および極端紫外光発生方法 |
JP2010170772A (ja) * | 2009-01-21 | 2010-08-05 | Ushio Inc | 極端紫外光光源装置 |
JP2010232150A (ja) * | 2009-03-30 | 2010-10-14 | Ushio Inc | 極端紫外光光源装置 |
JP2011513967A (ja) * | 2008-02-28 | 2011-04-28 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射を発生させるように構成されたデバイス、リソグラフィ装置、およびデバイス製造方法 |
JP2014082206A (ja) * | 2012-10-15 | 2014-05-08 | Xtreme Technologies Gmbh | ガス放電プラズマを用いる短波長電磁放射生成装置 |
Families Citing this family (24)
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US7759663B1 (en) * | 2006-12-06 | 2010-07-20 | Asml Netherlands B.V. | Self-shading electrodes for debris suppression in an EUV source |
US7518134B2 (en) * | 2006-12-06 | 2009-04-14 | Asml Netherlands B.V. | Plasma radiation source for a lithographic apparatus |
US7696493B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
US7838853B2 (en) * | 2006-12-14 | 2010-11-23 | Asml Netherlands B.V. | Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method |
DE102007004440B4 (de) * | 2007-01-25 | 2011-05-12 | Xtreme Technologies Gmbh | Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung mittels einer elektrisch betriebenen Gasentladung |
JP5149514B2 (ja) * | 2007-02-20 | 2013-02-20 | ギガフォトン株式会社 | 極端紫外光源装置 |
US20080239262A1 (en) * | 2007-03-29 | 2008-10-02 | Asml Netherlands B.V. | Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation |
JP5709251B2 (ja) * | 2007-09-07 | 2015-04-30 | コーニンクレッカ フィリップス エヌ ヴェ | 高パワー動作のためのホイールカバーを有するガス放電光源のための回転ホイール電極 |
EP2198675B1 (en) | 2007-09-07 | 2013-03-13 | Philips Intellectual Property & Standards GmbH | Electrode device for gas discharge sources and method of operating a gas discharge source having this electrode device |
WO2009044312A1 (en) * | 2007-10-01 | 2009-04-09 | Philips Intellectual Property & Standards Gmbh | High voltage electrical connection line |
WO2009077943A1 (en) * | 2007-12-14 | 2009-06-25 | Philips Intellectual Property & Standards Gmbh | Method for laser-based plasma production and radiation source, in particular for euv radiation |
DE102007060807B4 (de) | 2007-12-18 | 2009-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungsquelle, insbesondere für EUV-Strahlung |
KR101642269B1 (ko) | 2008-07-18 | 2016-07-26 | 코닌클리케 필립스 엔.브이. | 오염 포획자를 포함하는 극자외선 방사 발생 장치 |
EP2170021B1 (en) | 2008-09-25 | 2015-11-04 | ASML Netherlands B.V. | Source module, radiation source and lithographic apparatus |
EP2494854B1 (en) * | 2009-10-29 | 2013-06-19 | Koninklijke Philips Electronics N.V. | Electrode system, in particular for gas discharge light sources |
EP2555598A1 (en) * | 2011-08-05 | 2013-02-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for generating optical radiation by means of electrically operated pulsed discharges |
US20140247435A1 (en) * | 2011-11-15 | 2014-09-04 | Asml Netherlands B.V. | Radiation source device, lithographic apparatus, and device manufacturing method |
DE102013103668B4 (de) | 2013-04-11 | 2016-02-25 | Ushio Denki Kabushiki Kaisha | Anordnung zum Handhaben eines flüssigen Metalls zur Kühlung von umlaufenden Komponenten einer Strahlungsquelle auf Basis eines strahlungsemittierenden Plasmas |
DE102013109048A1 (de) * | 2013-08-21 | 2015-02-26 | Ushio Denki Kabushiki Kaisha | Verfahren und Vorrichtung zur Kühlung von Strahlungsquellen auf Basis eines Plasmas |
DE102013017655B4 (de) | 2013-10-18 | 2017-01-05 | Ushio Denki Kabushiki Kaisha | Anordnung und Verfahren zum Kühlen einer plasmabasierten Strahlungsquelle |
DE102014102720B4 (de) * | 2014-02-28 | 2017-03-23 | Ushio Denki Kabushiki Kaisha | Anordnung zum Kühlen einer plasmabasierten Strahlungsquelle mit einer metallischen Kühlflüssigkeit und Verfahren zur Inbetriebnahme einer solchen Kühlanordnung |
US10021773B2 (en) | 2015-11-16 | 2018-07-10 | Kla-Tencor Corporation | Laser produced plasma light source having a target material coated on a cylindrically-symmetric element |
CN113960019A (zh) * | 2021-10-26 | 2022-01-21 | 天津大学 | 一种双转盘电极原子发射光谱油液元素装置 |
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WO2005025280A2 (en) * | 2003-09-11 | 2005-03-17 | Koninklijke Philips Electronics N. V. | Method and apparatus for producing extreme ultraviolett radiation or soft x-ray radiation |
Family Cites Families (7)
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JP2000061839A (ja) * | 1998-08-19 | 2000-02-29 | Rikagaku Kenkyusho | マイクロ放電ツルーイング装置とこれを用いた微細加工方法 |
TW589924B (en) * | 2001-04-06 | 2004-06-01 | Fraunhofer Ges Forschung | Process and device for producing extreme ultraviolet ray/weak x-ray |
TWI266962B (en) * | 2002-09-19 | 2006-11-21 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and device manufacturing method |
EP1401248B1 (en) * | 2002-09-19 | 2012-07-25 | ASML Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
WO2004062050A2 (en) * | 2003-01-02 | 2004-07-22 | Jmar Research Inc. | Method and apparatus for generating a membrane target for laser produced plasma |
RU2278483C2 (ru) * | 2004-04-14 | 2006-06-20 | Владимир Михайлович Борисов | Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы |
US7501642B2 (en) * | 2005-12-29 | 2009-03-10 | Asml Netherlands B.V. | Radiation source |
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2005
- 2005-05-19 DE DE102005023060A patent/DE102005023060B4/de active Active
-
2006
- 2006-05-08 CN CN200680017282XA patent/CN101180923B/zh active Active
- 2006-05-08 DE DE602006013621T patent/DE602006013621D1/de active Active
- 2006-05-08 EP EP06744876A patent/EP1886542B1/en active Active
- 2006-05-08 WO PCT/IB2006/051428 patent/WO2006123270A2/en not_active Application Discontinuation
- 2006-05-08 US US11/914,773 patent/US7630475B2/en active Active
- 2006-05-08 KR KR1020077029674A patent/KR101214136B1/ko active IP Right Grant
- 2006-05-08 AT AT06744876T patent/ATE464776T1/de not_active IP Right Cessation
- 2006-05-08 JP JP2008511830A patent/JP4879974B2/ja active Active
Patent Citations (2)
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WO2005025280A2 (en) * | 2003-09-11 | 2005-03-17 | Koninklijke Philips Electronics N. V. | Method and apparatus for producing extreme ultraviolett radiation or soft x-ray radiation |
JP2007505460A (ja) * | 2003-09-11 | 2007-03-08 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | 極紫外放射又は軟x線放射を生成する方法及び装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010389A (ja) * | 2007-06-28 | 2009-01-15 | Asml Netherlands Bv | リソグラフィ装置、放射システム、デバイス製造方法、及び放射生成方法 |
JP2009111298A (ja) * | 2007-10-31 | 2009-05-21 | Ushio Inc | 極端紫外光光源装置 |
JP2011513967A (ja) * | 2008-02-28 | 2011-04-28 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射を発生させるように構成されたデバイス、リソグラフィ装置、およびデバイス製造方法 |
JP2010080362A (ja) * | 2008-09-29 | 2010-04-08 | Ushio Inc | 極端紫外光光源装置および極端紫外光発生方法 |
JP4623192B2 (ja) * | 2008-09-29 | 2011-02-02 | ウシオ電機株式会社 | 極端紫外光光源装置および極端紫外光発生方法 |
JP2010170772A (ja) * | 2009-01-21 | 2010-08-05 | Ushio Inc | 極端紫外光光源装置 |
JP2010232150A (ja) * | 2009-03-30 | 2010-10-14 | Ushio Inc | 極端紫外光光源装置 |
JP2014082206A (ja) * | 2012-10-15 | 2014-05-08 | Xtreme Technologies Gmbh | ガス放電プラズマを用いる短波長電磁放射生成装置 |
Also Published As
Publication number | Publication date |
---|---|
DE102005023060B4 (de) | 2011-01-27 |
EP1886542A2 (en) | 2008-02-13 |
KR20080043740A (ko) | 2008-05-19 |
DE602006013621D1 (de) | 2010-05-27 |
KR101214136B1 (ko) | 2012-12-21 |
US7630475B2 (en) | 2009-12-08 |
JP4879974B2 (ja) | 2012-02-22 |
EP1886542B1 (en) | 2010-04-14 |
WO2006123270A3 (en) | 2007-03-08 |
CN101180923B (zh) | 2011-12-14 |
ATE464776T1 (de) | 2010-04-15 |
DE102005023060A1 (de) | 2006-11-30 |
US20080187105A1 (en) | 2008-08-07 |
CN101180923A (zh) | 2008-05-14 |
WO2006123270A2 (en) | 2006-11-23 |
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