CN101160658A - 具有改善热导率的难熔金属衬底 - Google Patents

具有改善热导率的难熔金属衬底 Download PDF

Info

Publication number
CN101160658A
CN101160658A CNA2005800457228A CN200580045722A CN101160658A CN 101160658 A CN101160658 A CN 101160658A CN A2005800457228 A CNA2005800457228 A CN A2005800457228A CN 200580045722 A CN200580045722 A CN 200580045722A CN 101160658 A CN101160658 A CN 101160658A
Authority
CN
China
Prior art keywords
substrate
group
metal
foil
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800457228A
Other languages
English (en)
Chinese (zh)
Inventor
H·F·布雷特
吴荣祯
P·库马
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Starck GmbH
Original Assignee
HC Starck GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Starck GmbH filed Critical HC Starck GmbH
Publication of CN101160658A publication Critical patent/CN101160658A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/257—Arrangements for cooling characterised by their materials having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12361—All metal or with adjacent metals having aperture or cut
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
CNA2005800457228A 2004-11-01 2005-10-27 具有改善热导率的难熔金属衬底 Pending CN101160658A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/978,940 US7416789B2 (en) 2004-11-01 2004-11-01 Refractory metal substrate with improved thermal conductivity
US10/978,940 2004-11-01

Publications (1)

Publication Number Publication Date
CN101160658A true CN101160658A (zh) 2008-04-09

Family

ID=36010454

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800457228A Pending CN101160658A (zh) 2004-11-01 2005-10-27 具有改善热导率的难熔金属衬底

Country Status (8)

Country Link
US (2) US7416789B2 (https=)
EP (1) EP1810330A2 (https=)
JP (1) JP2008519437A (https=)
KR (1) KR20070085553A (https=)
CN (1) CN101160658A (https=)
AU (1) AU2005302402A1 (https=)
MY (1) MY139827A (https=)
WO (1) WO2006050205A2 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102051498A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 钨铜、钼铜合金热沉材料及制备方法
CN102054804A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 铜钼铜热沉材料及制备方法
CN102163705A (zh) * 2010-01-29 2011-08-24 通用汽车环球科技运作有限责任公司 用于电池模块的互连构件
CN104538836A (zh) * 2014-12-31 2015-04-22 西安炬光科技有限公司 一种用于高功率半导体激光器的液体制冷片
CN109661145A (zh) * 2017-10-12 2019-04-19 古德系统有限公司 散热板
CN111009496A (zh) * 2019-12-31 2020-04-14 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111261594A (zh) * 2020-03-12 2020-06-09 哈尔滨铸鼎工大新材料科技有限公司 一种带有导热通道的铜钼铜载体基板及其制造方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI388042B (zh) * 2004-11-04 2013-03-01 台灣積體電路製造股份有限公司 基於奈米管基板之積體電路
JP3862737B1 (ja) * 2005-10-18 2006-12-27 栄樹 津島 クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
TW200737486A (en) * 2006-03-24 2007-10-01 Lightuning Tech Inc Semiconductor integrated circuit chip with nano-structure-surface resin passivation and method of fabricating the same
US8502373B2 (en) * 2008-05-05 2013-08-06 Qualcomm Incorporated 3-D integrated circuit lateral heat dissipation
US7956446B2 (en) * 2008-05-13 2011-06-07 Infineon Technologies Ag Semiconductor device and method
AT11107U1 (de) 2008-11-20 2010-04-15 Plansee Se Wärmesenke sowie verfahren zu deren herstellung
JP5279639B2 (ja) * 2009-07-08 2013-09-04 京セラ株式会社 グラファイトシート
FR2951020B1 (fr) * 2009-10-01 2012-03-09 Nat De Metrologie Et D Essais Lab Materiau composite multicouche utilise pour la fabrication de substrats de modules electroniques et procede de fabrication correspondant
US20110129189A1 (en) * 2009-11-30 2011-06-02 Venkata Adiseshaiah Bhagavatula Clad metal substrates in optical packages
JP6008117B2 (ja) * 2012-02-15 2016-10-19 パナソニックＩｐマネジメント株式会社 グラファイト構造体およびそれを用いた電子デバイス
JP5938577B2 (ja) * 2012-04-19 2016-06-22 パナソニックＩｐマネジメント株式会社 熱伝導シートおよびその製造方法およびこれを用いた熱伝導体
CN103981382A (zh) * 2014-05-22 2014-08-13 武汉理工大学 一种高导热金刚石/铜基复合材料的制备方法
KR20160086757A (ko) 2014-12-09 2016-07-20 인텔 코포레이션 구리 합금 도전성 루트 구조체를 갖는 마이크로전자 기판
US20160192488A1 (en) * 2014-12-30 2016-06-30 Samsung Electro-Mechanics Co., Ltd. Circuit board, multilayered substrate having the circuit board and method of manufacturing the circuit board
WO2017221105A1 (en) 2016-06-23 2017-12-28 Manoj Harilal Akkad Method for enhancing resistance to delamination of a coating layer applied to a rigid, monolithic substrate
JP6304670B1 (ja) * 2017-04-14 2018-04-04 株式会社半導体熱研究所 放熱基板、放熱基板電極、半導体パッケージ、及び半導体モジュール
JP6544727B2 (ja) * 2017-11-20 2019-07-17 株式会社半導体熱研究所 放熱基板、放熱基板電極、半導体パッケージ、及び半導体モジュール、並びに放熱基板の製造方法
CN110181898B (zh) * 2018-02-23 2026-03-17 福特环球技术公司 竹纤维复合板及其制造方法
KR102564761B1 (ko) 2019-03-07 2023-08-07 앱솔릭스 인코포레이티드 패키징 기판 및 이를 포함하는 반도체 장치
CN113261094B (zh) 2019-03-07 2024-04-16 爱玻索立克公司 封装基板及包括其的半导体装置
US11967542B2 (en) 2019-03-12 2024-04-23 Absolics Inc. Packaging substrate, and semiconductor device comprising same
US11652039B2 (en) 2019-03-12 2023-05-16 Absolics Inc. Packaging substrate with core layer and cavity structure and semiconductor device comprising the same
KR102537004B1 (ko) 2019-03-12 2023-05-26 앱솔릭스 인코포레이티드 패키징 기판 및 이의 제조방법
US11981501B2 (en) 2019-03-12 2024-05-14 Absolics Inc. Loading cassette for substrate including glass and substrate loading method to which same is applied
CN114678344B (zh) * 2019-03-29 2025-08-15 爱玻索立克公司 半导体用封装玻璃基板、半导体封装基板及半导体装置
JP7104245B2 (ja) 2019-08-23 2022-07-20 アブソリックス インコーポレイテッド パッケージング基板及びこれを含む半導体装置
JP2021106202A (ja) * 2019-12-26 2021-07-26 住友電気工業株式会社 板材、放熱材及び板材の製造方法
US11774190B2 (en) * 2020-04-14 2023-10-03 International Business Machines Corporation Pierced thermal interface constructions
KR20230043122A (ko) * 2020-08-06 2023-03-30 스미토모덴키고교가부시키가이샤 복합 재료, 히트 스프레더 및 반도체 패키지
US12224223B1 (en) * 2020-11-23 2025-02-11 Raytheon Company Adaptive structure for thermal regulation and optimization
CN112941430B (zh) * 2021-02-01 2022-03-04 吉林大学 一种金刚石复合散热材料的粉末冶金制备方法
US20250071945A1 (en) * 2022-01-20 2025-02-27 Telefonaktiebolaget Lm Ericsson (Publ) A heat spreader, and an electronic module
US20250163277A1 (en) * 2022-03-04 2025-05-22 The Regents Of The University Of California Bioinspired coatings, materials, and structures for thermal management
JP2024111480A (ja) * 2023-02-06 2024-08-19 三菱電機株式会社 半導体デバイス
EP4672316A1 (en) * 2024-06-25 2025-12-31 Nexperia B.V. SUBSTRATE, IN PARTICULAR A CONNECTION GRID SUBSTRATE USED IN A SEMICONDUCTOR HOUSING FOR MOUNTING A SEMICONDUCTOR CHIP ELEMENT

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325776A (en) * 1977-06-20 1982-04-20 Siemens Aktiengesellschaft Method for preparing coarse-crystal or single-crystal metal films
EP0024863B1 (en) * 1979-08-31 1983-05-25 Fujitsu Limited A tantalum thin film capacitor and process for producing the same
JPH0759936B2 (ja) * 1987-08-08 1995-06-28 三信工業株式会社 船舶推進機の内燃機関制御装置
CA1316303C (en) 1988-12-23 1993-04-20 Thijs Eerkes Composite structure
US5300809A (en) 1989-12-12 1994-04-05 Sumitomo Special Metals Co., Ltd. Heat-conductive composite material
US5011655A (en) 1989-12-22 1991-04-30 Inco Alloys International, Inc. Process of forming a composite structure
JPH0738428B2 (ja) 1990-01-29 1995-04-26 インコ、リミテッド 複合構造物
DE69217810T2 (de) 1991-10-12 1997-10-09 Sumitomo Spec Metals Verfahren zur Herstellung eines warmleitenden Materials
US5156923A (en) 1992-01-06 1992-10-20 Texas Instruments Incorporated Heat-transferring circuit substrate with limited thermal expansion and method for making
GEP20002074B (en) * 1992-05-19 2000-05-10 Westaim Tech Inc Ca Modified Material and Method for its Production
JP3462308B2 (ja) * 1995-06-16 2003-11-05 住友特殊金属株式会社 熱伝導複合材料の製造方法
JP2765621B2 (ja) 1995-07-31 1998-06-18 日本電気株式会社 半導体装置用パッケージ
JPH09312361A (ja) 1996-05-22 1997-12-02 Hitachi Metals Ltd 電子部品用複合材料およびその製造方法
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6555762B2 (en) 1999-07-01 2003-04-29 International Business Machines Corporation Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition
US20010038140A1 (en) 2000-04-06 2001-11-08 Karker Jeffrey A. High rigidity, multi-layered semiconductor package and method of making the same
JP3841633B2 (ja) 2000-10-16 2006-11-01 ヤマハ株式会社 半導体レーザモジュール
US7651658B2 (en) * 2002-01-24 2010-01-26 H.C. Starck Inc. Refractory metal and alloy refining by laser forming and melting

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102051498A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 钨铜、钼铜合金热沉材料及制备方法
CN102054804A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 铜钼铜热沉材料及制备方法
CN102163705A (zh) * 2010-01-29 2011-08-24 通用汽车环球科技运作有限责任公司 用于电池模块的互连构件
CN102163705B (zh) * 2010-01-29 2015-09-16 通用汽车环球科技运作有限责任公司 用于电池模块的互连构件
CN104538836A (zh) * 2014-12-31 2015-04-22 西安炬光科技有限公司 一种用于高功率半导体激光器的液体制冷片
CN104538836B (zh) * 2014-12-31 2018-02-02 西安炬光科技股份有限公司 一种用于高功率半导体激光器的液体制冷片
CN109661145A (zh) * 2017-10-12 2019-04-19 古德系统有限公司 散热板
CN111009496A (zh) * 2019-12-31 2020-04-14 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111009496B (zh) * 2019-12-31 2021-07-06 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111261594A (zh) * 2020-03-12 2020-06-09 哈尔滨铸鼎工大新材料科技有限公司 一种带有导热通道的铜钼铜载体基板及其制造方法

Also Published As

Publication number Publication date
AU2005302402A1 (en) 2006-05-11
KR20070085553A (ko) 2007-08-27
EP1810330A2 (en) 2007-07-25
US20060091552A1 (en) 2006-05-04
US7416789B2 (en) 2008-08-26
WO2006050205A2 (en) 2006-05-11
US20080102304A1 (en) 2008-05-01
JP2008519437A (ja) 2008-06-05
WO2006050205A3 (en) 2006-09-08
MY139827A (en) 2009-10-30

Similar Documents

Publication Publication Date Title
CN101160658A (zh) 具有改善热导率的难熔金属衬底
EP0537965B1 (en) Process of manufacturing a heat-conductive material
US5113315A (en) Heat-conductive metal ceramic composite material panel system for improved heat dissipation
EP1944116A1 (en) Cladding material and its fabrication method, method for molding cladding material, and heat sink using cladding material
US9095062B2 (en) Power module substrate, power module, and method for manufacturing power module substrate
JP7440944B2 (ja) 複合材料および放熱部品
JP2004507073A (ja) 高剛性、多層半導体パッケージ、およびその製造方法
JPH0313331A (ja) 熱膨張係数及び熱伝導率可変複合材料
EP3962244B1 (en) Substrate with thermal vias and sinter-bonded thermal dissipation structure
Datta et al. Microheat exchanger for cooling high power laser diodes
DE10320838B4 (de) Faserverstärktes Metall-Keramik/Glas-Verbundmaterial als Substrat für elektrische Anwendungen, Verfahren zum Herstellen eines derartigen Verbundmaterials sowie Verwendung dieses Verbundmaterials
US20090255660A1 (en) High Thermal Conductivity Heat Sinks With Z-Axis Inserts
WO2018020695A1 (ja) 放熱基板、半導体パッケージ、及び半導体モジュール、並びに放熱基板の製造方法
CN114365276A (zh) 散热板、半导体封装及半导体模块
US6998180B2 (en) Package with a substrate of high thermal conductivity
JP2005011922A (ja) ヒートシンクを備えた両面銅貼り基板、およびこれを用いた半導体装置
CN111524814A (zh) 一种功率器件高可靠高密度集成结构的制备方法
JP7640558B2 (ja) 複合材料、ヒートスプレッダ及び半導体パッケージ
JP4416362B2 (ja) 半導体素子用放熱性部品及び半導体装置
KR102257877B1 (ko) 방열판재
JPH05109947A (ja) 熱伝導材料とその製造方法
WO2023286856A1 (ja) 銅／セラミックス接合体、および、絶縁回路基板
JPH03231445A (ja) 複合構造物
JPH04230063A (ja) 多層ヒートシンク
CN120977873B (zh) 散热基板、散热结构及其制备方法和电子器件封装结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication