CN101160658A - 具有改善热导率的难熔金属衬底 - Google Patents

具有改善热导率的难熔金属衬底 Download PDF

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Publication number
CN101160658A
CN101160658A CNA2005800457228A CN200580045722A CN101160658A CN 101160658 A CN101160658 A CN 101160658A CN A2005800457228 A CNA2005800457228 A CN A2005800457228A CN 200580045722 A CN200580045722 A CN 200580045722A CN 101160658 A CN101160658 A CN 101160658A
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China
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substrate
group
metal
foil
layer
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CNA2005800457228A
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English (en)
Chinese (zh)
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H·F·布雷特
吴荣祯
P·库马
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HC Starck GmbH
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HC Starck GmbH
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12361All metal or with adjacent metals having aperture or cut
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12486Laterally noncoextensive components [e.g., embedded, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12903Cu-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
CNA2005800457228A 2004-11-01 2005-10-27 具有改善热导率的难熔金属衬底 Pending CN101160658A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/978,940 2004-11-01
US10/978,940 US7416789B2 (en) 2004-11-01 2004-11-01 Refractory metal substrate with improved thermal conductivity

Publications (1)

Publication Number Publication Date
CN101160658A true CN101160658A (zh) 2008-04-09

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Country Link
US (2) US7416789B2 (enExample)
EP (1) EP1810330A2 (enExample)
JP (1) JP2008519437A (enExample)
KR (1) KR20070085553A (enExample)
CN (1) CN101160658A (enExample)
AU (1) AU2005302402A1 (enExample)
MY (1) MY139827A (enExample)
WO (1) WO2006050205A2 (enExample)

Cited By (7)

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CN102051498A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 钨铜、钼铜合金热沉材料及制备方法
CN102054804A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 铜钼铜热沉材料及制备方法
CN102163705A (zh) * 2010-01-29 2011-08-24 通用汽车环球科技运作有限责任公司 用于电池模块的互连构件
CN104538836A (zh) * 2014-12-31 2015-04-22 西安炬光科技有限公司 一种用于高功率半导体激光器的液体制冷片
CN109661145A (zh) * 2017-10-12 2019-04-19 古德系统有限公司 散热板
CN111009496A (zh) * 2019-12-31 2020-04-14 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111261594A (zh) * 2020-03-12 2020-06-09 哈尔滨铸鼎工大新材料科技有限公司 一种带有导热通道的铜钼铜载体基板及其制造方法

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TWI388042B (zh) * 2004-11-04 2013-03-01 台灣積體電路製造股份有限公司 基於奈米管基板之積體電路
JP3862737B1 (ja) * 2005-10-18 2006-12-27 栄樹 津島 クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
TW200737486A (en) * 2006-03-24 2007-10-01 Lightuning Tech Inc Semiconductor integrated circuit chip with nano-structure-surface resin passivation and method of fabricating the same
US8502373B2 (en) * 2008-05-05 2013-08-06 Qualcomm Incorporated 3-D integrated circuit lateral heat dissipation
US7956446B2 (en) * 2008-05-13 2011-06-07 Infineon Technologies Ag Semiconductor device and method
AT11107U1 (de) 2008-11-20 2010-04-15 Plansee Se Wärmesenke sowie verfahren zu deren herstellung
JP5279639B2 (ja) * 2009-07-08 2013-09-04 京セラ株式会社 グラファイトシート
FR2951020B1 (fr) * 2009-10-01 2012-03-09 Nat De Metrologie Et D Essais Lab Materiau composite multicouche utilise pour la fabrication de substrats de modules electroniques et procede de fabrication correspondant
US20110129189A1 (en) * 2009-11-30 2011-06-02 Venkata Adiseshaiah Bhagavatula Clad metal substrates in optical packages
JP6008117B2 (ja) * 2012-02-15 2016-10-19 パナソニックIpマネジメント株式会社 グラファイト構造体およびそれを用いた電子デバイス
JP5938577B2 (ja) * 2012-04-19 2016-06-22 パナソニックIpマネジメント株式会社 熱伝導シートおよびその製造方法およびこれを用いた熱伝導体
CN103981382A (zh) * 2014-05-22 2014-08-13 武汉理工大学 一种高导热金刚石/铜基复合材料的制备方法
JP6227803B2 (ja) 2014-12-09 2017-11-08 インテル・コーポレーション 銅合金導電性経路構造体を備えるマイクロ電子基板
US20160192488A1 (en) * 2014-12-30 2016-06-30 Samsung Electro-Mechanics Co., Ltd. Circuit board, multilayered substrate having the circuit board and method of manufacturing the circuit board
WO2017221105A1 (en) 2016-06-23 2017-12-28 Manoj Harilal Akkad Method for enhancing resistance to delamination of a coating layer applied to a rigid, monolithic substrate
JP6304670B1 (ja) * 2017-04-14 2018-04-04 株式会社半導体熱研究所 放熱基板、放熱基板電極、半導体パッケージ、及び半導体モジュール
JP6544727B2 (ja) * 2017-11-20 2019-07-17 株式会社半導体熱研究所 放熱基板、放熱基板電極、半導体パッケージ、及び半導体モジュール、並びに放熱基板の製造方法
CN110181898A (zh) * 2018-02-23 2019-08-30 福特环球技术公司 竹纤维复合板及其制造方法
EP3905315A4 (en) 2019-03-07 2022-10-19 Absolics Inc. PACKAGING SUBSTRATE AND SEMICONDUCTOR DEVICE EQUIPPED WITH THE SAME
JP7433318B2 (ja) 2019-03-07 2024-02-19 アブソリックス インコーポレイテッド パッケージング基板及びこれを含む半導体装置
ES3033139T3 (en) 2019-03-12 2025-07-31 Absolics Inc Packaging substrate and semiconductor device comprising same
CN113272951B (zh) 2019-03-12 2024-04-16 爱玻索立克公司 封装基板及包括其的半导体装置
KR102622608B1 (ko) 2019-03-12 2024-01-08 앱솔릭스 인코포레이티드 패키징 기판 및 이의 제조방법
CN113424304B (zh) 2019-03-12 2024-04-12 爱玻索立克公司 装载盒及对象基板的装载方法
EP3910667B1 (en) * 2019-03-29 2025-08-13 Absolics Inc. Packaging glass substrate for semiconductor, packaging substrate for semiconductor, and semiconductor device
KR20220089715A (ko) 2019-08-23 2022-06-28 앱솔릭스 인코포레이티드 패키징 기판 및 이를 포함하는 반도체 장치
JP2021106202A (ja) * 2019-12-26 2021-07-26 住友電気工業株式会社 板材、放熱材及び板材の製造方法
US11774190B2 (en) * 2020-04-14 2023-10-03 International Business Machines Corporation Pierced thermal interface constructions
US12224223B1 (en) * 2020-11-23 2025-02-11 Raytheon Company Adaptive structure for thermal regulation and optimization
CN112941430B (zh) * 2021-02-01 2022-03-04 吉林大学 一种金刚石复合散热材料的粉末冶金制备方法
EP4466733A4 (en) * 2022-01-20 2025-12-10 Ericsson Telefon Ab L M HEAT DISSIPATOR AND ELECTRONIC MODULE
WO2023168114A1 (en) * 2022-03-04 2023-09-07 The Regents Of The University Of California Bioinspired coatings, materials, and structures for thermal management

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Publication number Priority date Publication date Assignee Title
CN102051498A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 钨铜、钼铜合金热沉材料及制备方法
CN102054804A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 铜钼铜热沉材料及制备方法
CN102163705A (zh) * 2010-01-29 2011-08-24 通用汽车环球科技运作有限责任公司 用于电池模块的互连构件
CN102163705B (zh) * 2010-01-29 2015-09-16 通用汽车环球科技运作有限责任公司 用于电池模块的互连构件
CN104538836A (zh) * 2014-12-31 2015-04-22 西安炬光科技有限公司 一种用于高功率半导体激光器的液体制冷片
CN104538836B (zh) * 2014-12-31 2018-02-02 西安炬光科技股份有限公司 一种用于高功率半导体激光器的液体制冷片
CN109661145A (zh) * 2017-10-12 2019-04-19 古德系统有限公司 散热板
CN111009496A (zh) * 2019-12-31 2020-04-14 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111009496B (zh) * 2019-12-31 2021-07-06 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111261594A (zh) * 2020-03-12 2020-06-09 哈尔滨铸鼎工大新材料科技有限公司 一种带有导热通道的铜钼铜载体基板及其制造方法

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Publication number Publication date
MY139827A (en) 2009-10-30
US20060091552A1 (en) 2006-05-04
US20080102304A1 (en) 2008-05-01
WO2006050205A2 (en) 2006-05-11
US7416789B2 (en) 2008-08-26
EP1810330A2 (en) 2007-07-25
KR20070085553A (ko) 2007-08-27
JP2008519437A (ja) 2008-06-05
AU2005302402A1 (en) 2006-05-11
WO2006050205A3 (en) 2006-09-08

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