KR20070085553A - 열전도도가 개선된 내화금속 기판 - Google Patents

열전도도가 개선된 내화금속 기판 Download PDF

Info

Publication number
KR20070085553A
KR20070085553A KR1020077012164A KR20077012164A KR20070085553A KR 20070085553 A KR20070085553 A KR 20070085553A KR 1020077012164 A KR1020077012164 A KR 1020077012164A KR 20077012164 A KR20077012164 A KR 20077012164A KR 20070085553 A KR20070085553 A KR 20070085553A
Authority
KR
South Korea
Prior art keywords
substrate
group
metal
thermal conductivity
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077012164A
Other languages
English (en)
Korean (ko)
Inventor
헨리 에프. 브라이트
롱-첸 리차드 우
프래브햇 쿠마
Original Assignee
에이치. 씨. 스타아크 아이앤씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이치. 씨. 스타아크 아이앤씨 filed Critical 에이치. 씨. 스타아크 아이앤씨
Publication of KR20070085553A publication Critical patent/KR20070085553A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12361—All metal or with adjacent metals having aperture or cut
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
KR1020077012164A 2004-11-01 2005-10-27 열전도도가 개선된 내화금속 기판 Withdrawn KR20070085553A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/978,940 2004-11-01
US10/978,940 US7416789B2 (en) 2004-11-01 2004-11-01 Refractory metal substrate with improved thermal conductivity

Publications (1)

Publication Number Publication Date
KR20070085553A true KR20070085553A (ko) 2007-08-27

Family

ID=36010454

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077012164A Withdrawn KR20070085553A (ko) 2004-11-01 2005-10-27 열전도도가 개선된 내화금속 기판

Country Status (8)

Country Link
US (2) US7416789B2 (enExample)
EP (1) EP1810330A2 (enExample)
JP (1) JP2008519437A (enExample)
KR (1) KR20070085553A (enExample)
CN (1) CN101160658A (enExample)
AU (1) AU2005302402A1 (enExample)
MY (1) MY139827A (enExample)
WO (1) WO2006050205A2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020180149A1 (ko) * 2019-03-07 2020-09-10 에스케이씨 주식회사 패키징 기판 및 이를 포함하는 반도체 장치
WO2020204473A1 (ko) * 2019-03-29 2020-10-08 에스케이씨 주식회사 반도체용 패키징 유리기판, 반도체용 패키징 기판 및 반도체 장치
US11469167B2 (en) 2019-08-23 2022-10-11 Absolics Inc. Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same
US11652039B2 (en) 2019-03-12 2023-05-16 Absolics Inc. Packaging substrate with core layer and cavity structure and semiconductor device comprising the same
US11967542B2 (en) 2019-03-12 2024-04-23 Absolics Inc. Packaging substrate, and semiconductor device comprising same
US11981501B2 (en) 2019-03-12 2024-05-14 Absolics Inc. Loading cassette for substrate including glass and substrate loading method to which same is applied
US12165979B2 (en) 2019-03-07 2024-12-10 Absolics Inc. Packaging substrate and semiconductor apparatus comprising same
US12198994B2 (en) 2019-03-12 2025-01-14 Absolics Inc. Packaging substrate and method for manufacturing same

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI388042B (zh) * 2004-11-04 2013-03-01 台灣積體電路製造股份有限公司 基於奈米管基板之積體電路
JP3862737B1 (ja) * 2005-10-18 2006-12-27 栄樹 津島 クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
TW200737486A (en) * 2006-03-24 2007-10-01 Lightuning Tech Inc Semiconductor integrated circuit chip with nano-structure-surface resin passivation and method of fabricating the same
US8502373B2 (en) * 2008-05-05 2013-08-06 Qualcomm Incorporated 3-D integrated circuit lateral heat dissipation
US7956446B2 (en) * 2008-05-13 2011-06-07 Infineon Technologies Ag Semiconductor device and method
AT11107U1 (de) 2008-11-20 2010-04-15 Plansee Se Wärmesenke sowie verfahren zu deren herstellung
JP5279639B2 (ja) * 2009-07-08 2013-09-04 京セラ株式会社 グラファイトシート
FR2951020B1 (fr) * 2009-10-01 2012-03-09 Nat De Metrologie Et D Essais Lab Materiau composite multicouche utilise pour la fabrication de substrats de modules electroniques et procede de fabrication correspondant
CN102054804A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 铜钼铜热沉材料及制备方法
CN102051498A (zh) * 2009-11-04 2011-05-11 江苏鼎启科技有限公司 钨铜、钼铜合金热沉材料及制备方法
US20110129189A1 (en) * 2009-11-30 2011-06-02 Venkata Adiseshaiah Bhagavatula Clad metal substrates in optical packages
US8563160B2 (en) * 2010-01-29 2013-10-22 GM Global Technology Operations LLC Interconnect member for a battery module
JP6008117B2 (ja) * 2012-02-15 2016-10-19 パナソニックＩｐマネジメント株式会社 グラファイト構造体およびそれを用いた電子デバイス
JP5938577B2 (ja) * 2012-04-19 2016-06-22 パナソニックＩｐマネジメント株式会社 熱伝導シートおよびその製造方法およびこれを用いた熱伝導体
CN103981382A (zh) * 2014-05-22 2014-08-13 武汉理工大学 一种高导热金刚石/铜基复合材料的制备方法
JP6227803B2 (ja) 2014-12-09 2017-11-08 インテル・コーポレーション 銅合金導電性経路構造体を備えるマイクロ電子基板
US20160192488A1 (en) * 2014-12-30 2016-06-30 Samsung Electro-Mechanics Co., Ltd. Circuit board, multilayered substrate having the circuit board and method of manufacturing the circuit board
CN104538836B (zh) * 2014-12-31 2018-02-02 西安炬光科技股份有限公司 一种用于高功率半导体激光器的液体制冷片
WO2017221105A1 (en) 2016-06-23 2017-12-28 Manoj Harilal Akkad Method for enhancing resistance to delamination of a coating layer applied to a rigid, monolithic substrate
JP6304670B1 (ja) * 2017-04-14 2018-04-04 株式会社半導体熱研究所 放熱基板、放熱基板電極、半導体パッケージ、及び半導体モジュール
EP3471138B1 (en) * 2017-10-12 2021-06-16 The Goodsystem Corp. Heat sink plate
JP6544727B2 (ja) * 2017-11-20 2019-07-17 株式会社半導体熱研究所 放熱基板、放熱基板電極、半導体パッケージ、及び半導体モジュール、並びに放熱基板の製造方法
CN110181898A (zh) * 2018-02-23 2019-08-30 福特环球技术公司 竹纤维复合板及其制造方法
JP2021106202A (ja) * 2019-12-26 2021-07-26 住友電気工業株式会社 板材、放熱材及び板材の製造方法
CN111009496B (zh) * 2019-12-31 2021-07-06 长春理工大学 一种具有高热导率的半导体衬底及其制备方法
CN111261594A (zh) * 2020-03-12 2020-06-09 哈尔滨铸鼎工大新材料科技有限公司 一种带有导热通道的铜钼铜载体基板及其制造方法
US11774190B2 (en) * 2020-04-14 2023-10-03 International Business Machines Corporation Pierced thermal interface constructions
US12224223B1 (en) * 2020-11-23 2025-02-11 Raytheon Company Adaptive structure for thermal regulation and optimization
CN112941430B (zh) * 2021-02-01 2022-03-04 吉林大学 一种金刚石复合散热材料的粉末冶金制备方法
EP4466733A4 (en) * 2022-01-20 2025-12-10 Ericsson Telefon Ab L M HEAT DISSIPATOR AND ELECTRONIC MODULE
WO2023168114A1 (en) * 2022-03-04 2023-09-07 The Regents Of The University Of California Bioinspired coatings, materials, and structures for thermal management

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325776A (en) * 1977-06-20 1982-04-20 Siemens Aktiengesellschaft Method for preparing coarse-crystal or single-crystal metal films
DE3063506D1 (en) * 1979-08-31 1983-07-07 Fujitsu Ltd A tantalum thin film capacitor and process for producing the same
JPH0759936B2 (ja) * 1987-08-08 1995-06-28 三信工業株式会社 船舶推進機の内燃機関制御装置
CA1316303C (en) 1988-12-23 1993-04-20 Thijs Eerkes Composite structure
US5300809A (en) * 1989-12-12 1994-04-05 Sumitomo Special Metals Co., Ltd. Heat-conductive composite material
US5011655A (en) * 1989-12-22 1991-04-30 Inco Alloys International, Inc. Process of forming a composite structure
JPH0738428B2 (ja) 1990-01-29 1995-04-26 インコ、リミテッド 複合構造物
EP0537965B1 (en) 1991-10-12 1997-03-05 Sumitomo Special Metals Company Limited Process of manufacturing a heat-conductive material
US5156923A (en) * 1992-01-06 1992-10-20 Texas Instruments Incorporated Heat-transferring circuit substrate with limited thermal expansion and method for making
GEP20002074B (en) * 1992-05-19 2000-05-10 Westaim Tech Inc Ca Modified Material and Method for its Production
JP3462308B2 (ja) * 1995-06-16 2003-11-05 住友特殊金属株式会社 熱伝導複合材料の製造方法
JP2765621B2 (ja) 1995-07-31 1998-06-18 日本電気株式会社 半導体装置用パッケージ
JPH09312361A (ja) * 1996-05-22 1997-12-02 Hitachi Metals Ltd 電子部品用複合材料およびその製造方法
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6555762B2 (en) * 1999-07-01 2003-04-29 International Business Machines Corporation Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition
US20010038140A1 (en) 2000-04-06 2001-11-08 Karker Jeffrey A. High rigidity, multi-layered semiconductor package and method of making the same
JP3841633B2 (ja) * 2000-10-16 2006-11-01 ヤマハ株式会社 半導体レーザモジュール
US7651658B2 (en) * 2002-01-24 2010-01-26 H.C. Starck Inc. Refractory metal and alloy refining by laser forming and melting

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020180149A1 (ko) * 2019-03-07 2020-09-10 에스케이씨 주식회사 패키징 기판 및 이를 포함하는 반도체 장치
US12288742B2 (en) 2019-03-07 2025-04-29 Absolics Inc. Packaging substrate and semiconductor apparatus comprising same
US12165979B2 (en) 2019-03-07 2024-12-10 Absolics Inc. Packaging substrate and semiconductor apparatus comprising same
US12198994B2 (en) 2019-03-12 2025-01-14 Absolics Inc. Packaging substrate and method for manufacturing same
US12456672B2 (en) 2019-03-12 2025-10-28 Absolics Inc. Packaging substrate having element group in cavity unit and semiconductor device comprising the same
US11652039B2 (en) 2019-03-12 2023-05-16 Absolics Inc. Packaging substrate with core layer and cavity structure and semiconductor device comprising the same
US11967542B2 (en) 2019-03-12 2024-04-23 Absolics Inc. Packaging substrate, and semiconductor device comprising same
US11981501B2 (en) 2019-03-12 2024-05-14 Absolics Inc. Loading cassette for substrate including glass and substrate loading method to which same is applied
WO2020204473A1 (ko) * 2019-03-29 2020-10-08 에스케이씨 주식회사 반도체용 패키징 유리기판, 반도체용 패키징 기판 및 반도체 장치
KR20210071074A (ko) * 2019-03-29 2021-06-15 에스케이씨 주식회사 반도체용 패키징 유리기판, 반도체용 패키징 기판 및 반도체 장치
US11437308B2 (en) 2019-03-29 2022-09-06 Absolics Inc. Packaging glass substrate for semiconductor, a packaging substrate for semiconductor, and a semiconductor apparatus
US11728259B2 (en) 2019-08-23 2023-08-15 Absolics Inc. Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same
US12027454B1 (en) 2019-08-23 2024-07-02 Absolics Inc. Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same
US11469167B2 (en) 2019-08-23 2022-10-11 Absolics Inc. Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same

Also Published As

Publication number Publication date
MY139827A (en) 2009-10-30
US20060091552A1 (en) 2006-05-04
US20080102304A1 (en) 2008-05-01
WO2006050205A2 (en) 2006-05-11
US7416789B2 (en) 2008-08-26
CN101160658A (zh) 2008-04-09
EP1810330A2 (en) 2007-07-25
JP2008519437A (ja) 2008-06-05
AU2005302402A1 (en) 2006-05-11
WO2006050205A3 (en) 2006-09-08

Similar Documents

Publication Publication Date Title
KR20070085553A (ko) 열전도도가 개선된 내화금속 기판
US5113315A (en) Heat-conductive metal ceramic composite material panel system for improved heat dissipation
EP0537965B1 (en) Process of manufacturing a heat-conductive material
US6032362A (en) Method for producing a heat spreader and semiconductor device with a heat spreader
DE69033226T2 (de) Wärmeleitendes Mischmaterial
WO2017002793A1 (ja) 半導体装置および半導体装置の製造方法
DE10320838B4 (de) Faserverstärktes Metall-Keramik/Glas-Verbundmaterial als Substrat für elektrische Anwendungen, Verfahren zum Herstellen eines derartigen Verbundmaterials sowie Verwendung dieses Verbundmaterials
JPH0313331A (ja) 熱膨張係数及び熱伝導率可変複合材料
US20160152004A1 (en) Composite laminate and electronic device
JP7440944B2 (ja) 複合材料および放熱部品
JP5496081B2 (ja) 金属被覆された構成部分を製造するための方法、金属被覆された構成部分、並びに金属被覆の際に構成部分を支持するための支持体
US6998180B2 (en) Package with a substrate of high thermal conductivity
KR102496716B1 (ko) 세라믹 기판 제조 방법
US12130096B2 (en) Heat sink, semiconductor package and semiconductor module
JP4416362B2 (ja) 半導体素子用放熱性部品及び半導体装置
KR20230043122A (ko) 복합 재료, 히트 스프레더 및 반도체 패키지
JP6317178B2 (ja) 回路基板および電子装置
EP2294613B1 (de) Planare elektrische leistungselektronik-module für hochtemperatur-anwendungen und entsprechende herstellungsverfahren
JPH03227621A (ja) 熱伝導複合材料
JPH03231445A (ja) 複合構造物
KR20200088606A (ko) 방열판재
CN119452473A (zh) 石墨结构体及其制造方法
JP2001294494A (ja) 金属セラミックス複合体および放熱部材
KR20250001885A (ko) 세라믹 회로 기판, 그 제조방법, 및 이를 구비한 양면 냉각형 파워 모듈
KR20250001886A (ko) 세라믹 회로 기판, 그 제조방법, 및 이를 구비한 양면 냉각형 파워 모듈

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20070530

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid