CN101145532B - 用于电镀半导体器件的方法 - Google Patents

用于电镀半导体器件的方法 Download PDF

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Publication number
CN101145532B
CN101145532B CN2007101668208A CN200710166820A CN101145532B CN 101145532 B CN101145532 B CN 101145532B CN 2007101668208 A CN2007101668208 A CN 2007101668208A CN 200710166820 A CN200710166820 A CN 200710166820A CN 101145532 B CN101145532 B CN 101145532B
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electroless plating
insulator
semiconductor
electroplating
semiconductor device
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CN101145532A (zh
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田中宏明
丰田稻男
渡边善文
近藤市治
真山惠次
阿部吉次
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Denso Corp
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Denso Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
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    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0012—Protection against reverse engineering, unauthorised use, use in unintended manner, wrong insertion or pin assignment
    • G—PHYSICS
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    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
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    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
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Abstract

一种电镀半导体晶片同时维持所镀薄膜厚度均匀的方法，防止在晶片背面淀积并且防止在后续步骤中污染。在半导体晶片的铝电极上间接形成连接端子，在晶片背面由绝缘体覆盖的情况下进行非电解地电镀。优选的是，所述绝缘体是作为构成产品一部分的玻璃衬底。半导体型传感器展现了对腐蚀介质提高了的耐腐蚀性。在半导体衬底上，所述半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的结构部分以及电量转换元件，并且具有多个焊点，所述焊点是用于向外部单元发送检测到的电信号的输出端子，其中所述焊点利用贵重金属保护。

Description

用于电镀半导体器件的方法
本申请为分案申请，其原申请是于2003年12月24日向中国专利局提交的专利申请，申请号为200380100334.6，发明名称为“半导体传感器以及用于电镀半导体器件的方法”。
技术领域
本发明涉及一种半导体传感器，并且涉及一种在生产该半导体传感器期间电镀半导体器件的方法。
背景技术
迄今已经将用于检测物理量或者用于检测化学成分的半导体传感器用作物理量传感器或者化学传感器，所述物理量诸如待测介质的压力和流速，所述化学成分是构成待测介质的化学成分。传统的半导体型物理量传感器例如使用主要由铝组成的焊点(pad)作为外部端子来向外部单元发送检测到的电信号。然而，为了满足对现代机器和设备的高精确控制的需要，已经迫切需要测量各种对象中的物理量，并且因为被测量的介质对铝的腐蚀而影响了产品的使用寿命。
在这种情况下，如图4所示，迄今使用的诸如形成凝胶的对策不足以防止铝的腐蚀，并且无法满足在例如汽车方面要求的产品寿命。
就主要包括铝的焊点而言，第3198779号日本专利教示一种压力传感器结构，用于检测强腐蚀性、耐压介质的压力，其中压力传感器元件通过焊线与端子插脚相连，并且将传感器芯片和导线端子插脚浸于油料中，并且利用具有抗蚀抵抗力的金属膜片密封。然而，这种结构需要诸如用于密封的金属膜片、油料和O型密封圈之类的组件，并且因此导致组装繁琐，由此无法实现小型化。
就水份和湿度而言，公开号为10-153508的日本未审专利(Kokai)教示了用Ti/Pd保护铝焊点的方案，其中Pd是贵重金属，然而该篇专利没有涉及腐蚀性溶液的任何具体描述。
此外，公开号为2001-509890国际专利申请教示了一种依靠填料的保护来防止腐蚀的方法，并且为此目的提出了一种用于引出导线的方法。然而本申请发明人通过实验已经证实：作为代表性的填料的硅凝胶未必足以保护铝焊点等免受在废气水溶液的级别氧化水的危害。
就传统的半导体器件的生产而言，压力传感器的电极通过使用铝线而形成，并且在铝线暴露的情况下焊接导线(例如金)。在该情况下，根据因为铝和金的电池反应而使用铝的环境，铝经常受到腐蚀。为了避免铝的腐蚀，需要在铝线上设法形成金属薄膜。例如图8所示，所述形成方法包括：通过溅射(真空电镀)在半导体(硅)晶片(硅衬底)的整个表面上形成金属薄膜，并且通过保护层构型(resist patterning)来去除不必要的金属薄膜，或者在晶片的整个表面上形成晶粒层，构型保护层，并且通过电镀(2是玻璃衬底)来形成电极。然而，这些方法另外需要施加保护层的步骤以及蚀刻步骤，由此提高了成本。在该情况下，电极结构变成如图9中所示那样。
此外，在非电解镍/金电镀中，只在铝线层上形成金属薄膜。然而，通常采用通过非电解地镀镍/金、形成膜片、然后连接玻璃衬底而在铝线上形成电极的步骤。图6举例说明了通常采用的传统的步骤流程，而图5举例说明了电极结构。也就是说，参见图6，在形成电路之后形成铝线，并且通过钝化膜保护电路表面。这里，钝化对铝线开放。通过在打开的铝线上进行非电解镀镍来镀镍薄膜，并且在镍上通过连续地进行非电解镀金来形成金。在将镍/金薄膜3镀在铝线上的情况下形成膜片，并且阳极地连接玻璃衬底2和硅晶片1。此后，将晶片切成小片。
因此，根据传统的方法，通过非电解地镀镍/金而形成的金在后续步骤中可以变成污染源。为防止这样情况的发生，可以形成膜片，形成电极，然后连接玻璃衬底，然而导致了一问题：将硅暴露在晶片的背面并且电镀的层具有不规则的厚度。为了使金属均匀地淀积，必须在晶片的背面形成保护膜(抗蚀膜等类似薄膜)，如图7中所示那样，并且所述步骤变得复杂。
发明内容
本发明的目的在于提供一种半导体型传感器，特征在于通过解决上述问题提高了对腐蚀介质的耐腐蚀性。换句话说，所述目的在于显著地提高焊点/导线周围部分的耐腐蚀性，其中半导体型传感器的信号经由所述焊点/电线周围部分发送。本发明的要旨在于：在半导体衬底上，半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的一结构部分以及一电量转换元件，并且具有焊点，所述焊点是输出端子，用于向外部单元发送检测到的电信号，其中所述焊点利用贵重金属保护。本发明的要旨还在于：一种用于生成半导体型传感器的方法，包括以下步骤：
在焊点上非电解地镀一镍薄膜；
在镀镍的薄膜上非电解地镀一贵重金属薄膜；
焊接贵重金属导线；以及
用一绝缘薄膜覆盖焊点以及导线焊接部分。
本发明还具有这样的目的，即：提供一种非常适合生产半导体型传感器的电镀半导体器件的方法。也就是说，为了增强焊点的耐腐蚀性，在传统的铝电极上形成作为保护膜的具有耐腐蚀性的贵重金属金，并且其上形成诸如凝胶保护膜的绝缘薄膜，以减小腐蚀介质和铝之间接触的可能性，其中腐蚀介质和铝的接触可形成腐蚀性结构。本发明提供了一种用于电镀半导体器件同时维护所镀薄膜厚度均匀的方法，由此防止了金属在半导体的背面淀积，防止了在后续步骤中的污染并且降低了成本。也就是说，本发明提供了一种电镀半导体器件的方法，其中在半导体衬底的铝电极上间接形成连接端子，在衬底背面由绝缘体覆盖的情况下进行非电解电镀。
附图说明
图1是根据本发明的半导体型传感器的电极结构的一实施例的视图；
图2(a)至2(f)是示意性地举例说明用于生成本发明的半导体型传感器的电镀步骤和组装步骤流程的视图；
图3是说明根据本发明的电镀半导体器件的优选方法的步骤流程图；
图4是说明传统的半导体型传感器中电极结构的视图；
图5和9是说明了传统的通用电极结构的视图；以及
图6至8说明了通常采用的传统的步骤流程图。
具体实施方式
在诸如晶片的半导体衬底上，根据本发明的半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的一结构部分以及一电量转换元件，并且具有多个焊点，所述焊点是输出端子，用于向外部单元发送检测到的电信号，其中所述焊点利用贵重金属保护。形成焊点的材料优选是铝。通常，将玻璃衬底设置在半导体衬底的背面。在本发明中，用于保护焊点的贵重金属可以是Au、Pt或者Pd的单个薄膜，或者它们的复合薄膜。所期望的是，所述贵重金属利用不包含氰化物离子的液体、连续通过非电解地镀Ni/Au、Cu/Au、Ni/Pt或者Ni/Pd来获得，特别优选的是镀Ni/Au。非电解电镀依靠稍后描述的本发明的电镀方法来进行。对所镀薄膜的厚度没有特别的限制。将导线焊接到焊点，用于向外部单元发送检测到的电信号。在本发明中，金是最适合作为导线材料的，由此形成的焊点以及导线焊接部分由绝缘薄膜覆盖。绝缘薄膜、其材料以及其薄膜厚度可以是已经广泛使用的那些。举例来说，可以是凝胶，底漆(primer)+凝胶，或者聚对苯二甲撑(parylene)+凝胶。作为凝胶，例如可以有氟凝胶、硅凝胶或者氟硅凝胶。
本发明的半导体型传感器的电极结构通过以下方法生成，所述方法包括以下步骤：
在焊点上非电解地镀一镍薄膜；
在镀镍的薄膜上非电解地镀一贵重金属；
焊接贵重金属导线；以及
利用绝缘薄膜覆盖焊点以及导线焊接部分。
根据本发明的半导体型传感器，在硅半导体衬底中具有用于检测物理量的一结构部分以及一电量转换元件，并且具有多个焊点，其中将获得的电信号经由导线发送。通过非电解电镀在焊点上形成镍和金薄膜，并且其整个结构由凝胶或者其他绝缘薄膜覆盖。
在本发明中，压力传感器可以例示为半导体型传感器，用于检测腐蚀介质的物理量。特别期望的是，所述压力传感器是用于在汽车发动机的废气环境中测量废气压力的压力传感器。此外，所述压力传感器是用于测量强腐蚀性并且高湿度的介质的压力的压力传感器。这些压力传感器具有在半导体衬底中依照常规方式形成的薄的膜片区域，因为在此区域中形成的扩散层而展现压电阻抗效应，并且被构造成将变形转换为阻抗方面的变化，以检测压力。
具体来讲，在如图1所示的压力传感器的实施例中，所述焊点具有通过在1.1μm厚的铝层上非电解地电镀并维持几微米厚而形成的镍层，以便帮助淀积金。然后，其上非电解地形成大约0.2μm厚的金。接下来，焊接金线(WB)。此阻碍了大多数部分与腐蚀性溶液进行接触。然而，在镍薄膜和SiN薄膜(芯片保护膜)之间存在间隙，并且此部分由绝缘薄膜(凝胶/聚对苯二甲撑/底漆+凝胶)覆盖。
本发明的优点在于由于电镀部分是完全自形成工序，其既不需要诸如暴露于光/蚀刻的半导体步骤，也不需要作为昂贵设施的校准器/清洁室/镀膜机/显影机，所以此生产方法具有优势。所述工作可在半导体步骤之后通过处理来进行。
如上所述，本发明防止用于检测腐蚀介质的物理量和化学成分的传感器中信号传输部分的腐蚀，并且同传统方法比较，有助于延长产品的使用寿命。具体来讲，当浸于具有pH值约为1.7的90℃的强酸性水溶液中时，所述器件的使用寿命是具有将铝暴露的结构的器件的大约两倍。
接下来，下面描述的是本发明的半导体器件的电镀方法。
在本发明的方法中，在半导体衬底(晶片)的铝电极上间接(indirectly)形成连接端子，在衬底背面由绝缘体覆盖的情况下，进行非电解地电镀。所期望的是，所述绝缘体是作为构成产品一部分的玻璃衬底。在该情况下，玻璃衬底还充当用于覆盖衬底背面的材料。
所期望的是，本发明的非电解地电镀处理是非电解镀镍。在进一步的优选实施例中，通过非电解镀镍形成镍，然后通过非电解镀金来形成金。此非电解镀镍和非电解镀金本身可以依照常规方式执行。然而根据本发明，如上所述地在接合玻璃衬底之后执行它们。
在本发明的方法中，通常从纯Al导线、Al-Si导线、Al-Cu导线或者Al-Si-Cu导线的任一项中挑选铝电极。纯的Al导线通常是不低于99.99％或者不低于99.999％的纯度的高纯铝导线。当包含硅时，硅的量通常是大约1％。非电解镀镍溶液例如是基于次磷酸钠或者硼化合物的电镀溶液。
在非电解地镀镍/金的过程中，通过锌酸盐处理，锌代替了铝线，并且通过非电解镀镍来淀积镍。所期望的是，镀镍的溶液包含作为还原剂的次磷酸离子。在镀镍时，所期望的是，将金通过非电解地电镀而形成，以防止镍氧化并且增强被焊接的导线的接合。
此外，在本发明优选实施例中，玻璃衬底可以由绝缘体覆盖，从而玻璃衬底中的孔隙不会使非电解镀液浸透。玻璃衬底可以通过粘合剂或者石蜡由绝缘体覆盖。通过粘合剂覆盖的材料期望是树脂或者玻璃。使用绝缘体覆盖玻璃衬底，粘合剂或者石蜡可以只应用于玻璃的外圆周，从而玻璃中的孔隙很少渗透粘合剂或者石蜡。如上所述，本发明的电镀方法最适合用于生产半导体型传感器。
接下来，将参照附图描述本发明电镀方法的优选实施例。图3说明了本发明的步骤流程。在图3中，在形成电路之后形成铝线，然后，形成钝化膜以便保护电路表面。然后，形成膜片，以便将玻璃衬底2和硅晶片1阳极地连接在一起。在铝线上通过非电解镀镍来镀一镍薄膜，然后，紧接着在镍上通过非电解镀金来形成金。在铝线上镀镍/金薄膜3的情况下，将晶片切成小片。最后获得的电极结构变成与图5中所示的现有技术相同。
在如上所述的本发明的方法中，形成膜片，接合玻璃衬底，然后形成电极(形成电极或者在最后步骤中进行非电解镀镍/金)，以便防止在后续步骤中的金污染。优选的是，玻璃衬底起覆盖材料的作用，以覆盖半导体衬底的背面，用来防止金属在半导体衬底的背面淀积，并且能够实现均匀电镀。
工业实用性
本发明提供了一种半导体型传感器，其提高了对腐蚀介质的抗腐蚀性。

Claims (6)

1.一种用于电镀半导体器件的方法，其中在半导体衬底的铝电极上间接形成连接端子，在衬底背面由第一绝缘体覆盖的情况下进行非电解电镀，其中所述非电解电镀处理是非电解镀镍，非电解镀镍溶液是基于次磷酸钠或者硼化合物的电镀溶液，其中通过非电解镀镍来形成镍，然后通过非电解镀金来形成金，其中所述第一绝缘体是构成半导体器件一部分的玻璃衬底，在将所述玻璃衬底和所述半导体衬底接合在一起之后，进行非电解镀镍以及非电解镀金，其中玻璃衬底由第二绝缘体覆盖，从而玻璃衬底中的孔隙不会渗透非电解电镀溶液。
2.如权利要求1所述的电镀半导体器件的方法，其中通过纯Al导线、Al-Si导线、Al-Cu导线或者Al-Si-Cu导线的任一形成铝电极。
3.如权利要求1所述的电镀半导体器件的方法，其中玻璃衬底通过粘合剂或者石蜡由所述第二绝缘体覆盖。
4.如权利要求3所述的电镀半导体器件的方法，其中通过粘合剂覆盖的所述第二绝缘体的材料是树脂或者玻璃。
5.如权利要求3所述的电镀半导体器件的方法，其中只将粘合剂或者石蜡应用于玻璃的外圆周部分，从而玻璃中的空隙很少渗透粘合剂或者石蜡。
6.如权利要求5所述的电镀半导体器件的方法，其中通过粘合剂覆盖的所述第二绝缘体的材料是树脂或者玻璃。
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