CN101116185A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN101116185A CN101116185A CN200580047720.2A CN200580047720A CN101116185A CN 101116185 A CN101116185 A CN 101116185A CN 200580047720 A CN200580047720 A CN 200580047720A CN 101116185 A CN101116185 A CN 101116185A
- Authority
- CN
- China
- Prior art keywords
- film
- semiconductor device
- oxide
- manufacture method
- forms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/003382 WO2006092846A1 (ja) | 2005-03-01 | 2005-03-01 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101116185A true CN101116185A (zh) | 2008-01-30 |
CN101116185B CN101116185B (zh) | 2010-04-21 |
Family
ID=36940892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200580047720.2A Expired - Fee Related CN101116185B (zh) | 2005-03-01 | 2005-03-01 | 半导体装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US20080006867A1 (zh) |
JP (1) | JP4968063B2 (zh) |
CN (1) | CN101116185B (zh) |
WO (1) | WO2006092846A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008120286A1 (ja) * | 2007-02-27 | 2008-10-09 | Fujitsu Microelectronics Limited | 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法 |
WO2016151684A1 (ja) * | 2015-03-20 | 2016-09-29 | 株式会社日立国際電気 | 半導体装置の製造方法、記録媒体及び基板処理装置 |
JP2019075470A (ja) * | 2017-10-17 | 2019-05-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体記憶装置及び電子機器 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262443A (ja) | 1984-06-08 | 1985-12-25 | Nec Corp | 多層配線の形成方法 |
JPS63117429A (ja) | 1986-11-05 | 1988-05-21 | Nec Corp | 半導体装置 |
ATE135848T1 (de) * | 1990-06-29 | 1996-04-15 | Canon Kk | Verfahren zum herstellen einer halbleiteranordnung mit einer ausrichtungsmarke |
US5385868A (en) * | 1994-07-05 | 1995-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Upward plug process for metal via holes |
JPH08264719A (ja) * | 1995-03-24 | 1996-10-11 | Olympus Optical Co Ltd | 誘電体素子 |
JP3431443B2 (ja) | 1997-03-14 | 2003-07-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP2846310B1 (ja) * | 1997-06-24 | 1999-01-13 | 松下電子工業株式会社 | 半導体装置及びその製造方法 |
TW396454B (en) * | 1997-06-24 | 2000-07-01 | Matsushita Electrics Corporati | Semiconductor device and method for fabricating the same |
JP2000004001A (ja) * | 1998-06-15 | 2000-01-07 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US6242299B1 (en) * | 1999-04-01 | 2001-06-05 | Ramtron International Corporation | Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
JP4149095B2 (ja) * | 1999-04-26 | 2008-09-10 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
US6611014B1 (en) * | 1999-05-14 | 2003-08-26 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof |
JP2002280528A (ja) * | 1999-05-14 | 2002-09-27 | Toshiba Corp | 半導体装置及びその製造方法 |
KR100329781B1 (ko) * | 1999-06-28 | 2002-03-25 | 박종섭 | 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법 |
JP2001250863A (ja) * | 1999-12-27 | 2001-09-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP3644887B2 (ja) * | 2000-04-11 | 2005-05-11 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3944487B2 (ja) * | 2000-04-11 | 2007-07-11 | 松下電器産業株式会社 | 半導体装置の製造装置 |
JP4006929B2 (ja) * | 2000-07-10 | 2007-11-14 | 富士通株式会社 | 半導体装置の製造方法 |
JP2002176149A (ja) | 2000-09-28 | 2002-06-21 | Sharp Corp | 半導体記憶素子およびその製造方法 |
JP3539491B2 (ja) * | 2001-02-26 | 2004-07-07 | シャープ株式会社 | 半導体装置の製造方法 |
US6717198B2 (en) * | 2001-09-27 | 2004-04-06 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric memory |
JP2003100994A (ja) | 2001-09-27 | 2003-04-04 | Oki Electric Ind Co Ltd | 強誘電体メモリおよびその製造方法 |
JP2003197878A (ja) * | 2001-10-15 | 2003-07-11 | Hitachi Ltd | メモリ半導体装置およびその製造方法 |
JP2003209223A (ja) * | 2002-01-15 | 2003-07-25 | Oki Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JP2003273325A (ja) * | 2002-03-15 | 2003-09-26 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP4659355B2 (ja) * | 2003-12-11 | 2011-03-30 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
JP2005229001A (ja) * | 2004-02-16 | 2005-08-25 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
-
2005
- 2005-03-01 JP JP2007505765A patent/JP4968063B2/ja active Active
- 2005-03-01 WO PCT/JP2005/003382 patent/WO2006092846A1/ja not_active Application Discontinuation
- 2005-03-01 CN CN200580047720.2A patent/CN101116185B/zh not_active Expired - Fee Related
-
2007
- 2007-09-04 US US11/849,715 patent/US20080006867A1/en not_active Abandoned
-
2010
- 2010-06-09 US US12/796,955 patent/US20100248395A1/en not_active Abandoned
-
2011
- 2011-10-12 US US13/271,527 patent/US8895322B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPWO2006092846A1 (ja) | 2008-08-07 |
US20100248395A1 (en) | 2010-09-30 |
US8895322B2 (en) | 2014-11-25 |
WO2006092846A1 (ja) | 2006-09-08 |
US20120028374A1 (en) | 2012-02-02 |
US20080006867A1 (en) | 2008-01-10 |
JP4968063B2 (ja) | 2012-07-04 |
CN101116185B (zh) | 2010-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6538272B2 (en) | Semiconductor storage device and method of producing same | |
JP4884104B2 (ja) | キャパシタを含む半導体装置及びその製造方法 | |
JP4690234B2 (ja) | 半導体装置及びその製造方法 | |
JP2005183842A (ja) | 半導体装置の製造方法 | |
CN100555606C (zh) | 半导体器件及其制造方法 | |
CN101116185B (zh) | 半导体装置的制造方法 | |
JP2006278942A (ja) | 半導体装置及びその製造方法 | |
JP3166746B2 (ja) | キャパシタ及びその製造方法 | |
JP4997939B2 (ja) | 半導体装置及びその製造方法 | |
CN101641781A (zh) | 半导体装置及其制造方法 | |
US20050255663A1 (en) | Semiconductor device and method of manufacturing the same | |
JP5316406B2 (ja) | 半導体装置の製造方法 | |
US6908867B2 (en) | Method of manufacturing a FeRAM with annealing process | |
CN1926686B (zh) | 半导体装置及其制造方法 | |
US6958501B2 (en) | Contact-making structure for a ferroelectric storage capacitor and method for fabricating the structure | |
US20070158715A1 (en) | Ferroelectric capacitor and method for fabricating the same | |
US20070212796A1 (en) | Method for manufacturing ferroelectric memory device and ferroelectric memory device | |
KR100944193B1 (ko) | 반도체 장치의 제조 방법 | |
KR100321699B1 (ko) | 니오비움-탄탈륨합금접착막을이용한강유전체캐패시터형성방법 | |
JP5998844B2 (ja) | 半導体装置およびその製造方法 | |
JP2002299583A (ja) | 半導体集積回路装置およびその製造方法 | |
KR100801202B1 (ko) | 반도체 장치의 제조 방법 | |
WO2008004297A1 (fr) | Dispositif à semi-conducteur comprenant un condensateur et procédé permettant de le fabriquer | |
JP2011066145A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2008010755A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100421 Termination date: 20210301 |
|
CF01 | Termination of patent right due to non-payment of annual fee |