CN101079967B - 固态成像装置及其制造方法、以及摄像机 - Google Patents

固态成像装置及其制造方法、以及摄像机 Download PDF

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Publication number
CN101079967B
CN101079967B CN2007101282503A CN200710128250A CN101079967B CN 101079967 B CN101079967 B CN 101079967B CN 2007101282503 A CN2007101282503 A CN 2007101282503A CN 200710128250 A CN200710128250 A CN 200710128250A CN 101079967 B CN101079967 B CN 101079967B
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film
substrate
image pickup
pickup device
solid state
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CN101079967A (zh
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丸山康
山口哲司
安藤崇志
桧山晋
大岸裕子
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Sony Corp
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Sony Corp
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Priority claimed from JP2007025807A external-priority patent/JP4992446B2/ja
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Priority to CN201310232383.0A priority Critical patent/CN103390627B/zh
Priority to CN201210551421.4A priority patent/CN103050501B/zh
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  • Transforming Light Signals Into Electric Signals (AREA)
CN2007101282503A 2006-02-24 2007-02-25 固态成像装置及其制造方法、以及摄像机 Active CN101079967B (zh)

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CN201310232383.0A CN103390627B (zh) 2006-02-24 2007-02-25 固态成像装置以及摄像机
CN201210551421.4A CN103050501B (zh) 2006-02-24 2007-02-25 固态成像装置及其制造方法、以及摄像机

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JP048173/06 2006-02-24
JP2006048173 2006-02-24
JP2007025807A JP4992446B2 (ja) 2006-02-24 2007-02-05 固体撮像装置及びその製造方法、並びにカメラ
JP025807/07 2007-02-05

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CN201310232383.0A Division CN103390627B (zh) 2006-02-24 2007-02-25 固态成像装置以及摄像机
CN201210551421.4A Division CN103050501B (zh) 2006-02-24 2007-02-25 固态成像装置及其制造方法、以及摄像机

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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100918691B1 (ko) * 2007-12-07 2009-09-22 제일모직주식회사 패드 보호막 형성용 감광성 수지 조성물, 및 이를 이용하는이미지 센서의 제조 방법
JP5136110B2 (ja) * 2008-02-19 2013-02-06 ソニー株式会社 固体撮像装置の製造方法
JP5374980B2 (ja) 2008-09-10 2013-12-25 ソニー株式会社 固体撮像装置
JP4924634B2 (ja) * 2009-03-04 2012-04-25 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
JP5347999B2 (ja) * 2009-03-12 2013-11-20 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
US8018016B2 (en) * 2009-06-26 2011-09-13 Omnivision Technologies, Inc. Back-illuminated image sensors having both frontside and backside photodetectors
US8872953B2 (en) * 2009-10-30 2014-10-28 Sony Corporation Solid-state imaging device, manufacturing method thereof, camera, and electronic device
JP2011114292A (ja) * 2009-11-30 2011-06-09 Sony Corp 固体撮像素子及びその製造方法、並びに撮像装置、並びに半導体素子及びその製造方法
JP5523813B2 (ja) * 2009-12-16 2014-06-18 株式会社東芝 固体撮像装置
US8278690B2 (en) * 2010-04-27 2012-10-02 Omnivision Technologies, Inc. Laser anneal for image sensors
US8587081B2 (en) 2010-04-28 2013-11-19 Calvin Yi-Ping Chao Back side illuminated image sensor with back side pixel substrate bias
CN102893400B (zh) * 2010-05-14 2015-04-22 松下电器产业株式会社 固体摄像装置及其制造方法
JP2012033583A (ja) 2010-07-29 2012-02-16 Sony Corp 固体撮像素子及びその製造方法、並びに撮像装置
KR20120084104A (ko) 2011-01-19 2012-07-27 엘지전자 주식회사 태양전지
US8742525B2 (en) * 2011-03-14 2014-06-03 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP5810575B2 (ja) * 2011-03-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US10079257B2 (en) 2012-04-13 2018-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-reflective layer for backside illuminated CMOS image sensors
US8610230B1 (en) * 2012-11-01 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. HfO2/SiO2-Si interface improvement for CMOS image sensor
CN104167419B (zh) * 2013-03-21 2017-08-25 英属开曼群岛商恒景科技股份有限公司 抑制热簇集的半导体结构、制作抑制热簇集半导体元件的方法与抑制热簇集的方法
KR102114629B1 (ko) * 2015-09-30 2020-05-25 가부시키가이샤 니콘 촬상 소자 및 전자 카메라
WO2017057397A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 撮像素子および電子カメラ
US10332921B2 (en) 2015-10-09 2019-06-25 Sony Semiconductor Solutions Corporation Solid-state image sensing device and method for manufacturing the same, and electronic device
CN108231813A (zh) * 2018-01-24 2018-06-29 德淮半导体有限公司 像素单元及其制造方法以及成像装置
CN110473886A (zh) * 2018-05-11 2019-11-19 联华电子股份有限公司 半导体元件的制造方法
JP2019091936A (ja) * 2019-02-27 2019-06-13 株式会社東芝 固体撮像装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1437262A (zh) * 2002-02-05 2003-08-20 双汉科技股份有限公司 混合照光区的互补式金氧半影像传感器结构及其电位读取方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057801B2 (ja) * 1991-05-08 2000-07-04 日本電気株式会社 固体撮像装置
JPH0697207A (ja) * 1992-09-14 1994-04-08 Mitsubishi Electric Corp 半導体装置
JPH11214668A (ja) * 1997-11-20 1999-08-06 Nikon Corp 固体撮像装置、並びに受光素子
JP2001144318A (ja) * 1999-11-18 2001-05-25 Ricoh Co Ltd 光電変換素子及びその製造方法
JP3695748B2 (ja) * 2001-05-16 2005-09-14 松下電器産業株式会社 固体撮像装置並びにその製造方法および駆動方法
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP2004241612A (ja) * 2003-02-06 2004-08-26 Fujitsu Ltd 半導体装置及びその製造方法
JP2005142510A (ja) * 2003-11-10 2005-06-02 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2005208519A (ja) * 2004-01-26 2005-08-04 Pentax Corp 反射防止膜を有する光学素子及び医療用光学機器
JP4779304B2 (ja) * 2004-03-19 2011-09-28 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール
JP4779320B2 (ja) * 2004-08-10 2011-09-28 ソニー株式会社 固体撮像装置およびその製造方法
JP2006261638A (ja) * 2005-02-21 2006-09-28 Sony Corp 固体撮像装置および固体撮像装置の駆動方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1437262A (zh) * 2002-02-05 2003-08-20 双汉科技股份有限公司 混合照光区的互补式金氧半影像传感器结构及其电位读取方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US 2006001059 A1,说明书37-41段，附图3和4.

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JP2012084902A (ja) 2012-04-26
JP5725239B2 (ja) 2015-05-27
JP5403043B2 (ja) 2014-01-29
JP2014160876A (ja) 2014-09-04
JP2012147004A (ja) 2012-08-02
CN101079967A (zh) 2007-11-28

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