CN101072896A - 形成抗反射涂层的方法 - Google Patents

形成抗反射涂层的方法 Download PDF

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CN101072896A
CN101072896A CNA2005800419565A CN200580041956A CN101072896A CN 101072896 A CN101072896 A CN 101072896A CN A2005800419565 A CNA2005800419565 A CN A2005800419565A CN 200580041956 A CN200580041956 A CN 200580041956A CN 101072896 A CN101072896 A CN 101072896A
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silsesquioxane resins
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CN101072896B (zh
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P-F·付
E·S·莫耶
C·R·耶克勒
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Abstract

一种在形成抗反射涂层中有用的倍半硅氧烷树脂，其通式为(PhSiO(3－x)/2(OH)x)mHSiO(3－x)/2(0H)x)n(MeSiO(3－x)/2(OH)x)p(RSiO(3－x)/2(OH)x)q，其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05－0.95，n的数值为0.05－0.95，p的数值为0.05－0.95，q的数值为0.01－0.30，和m+n+p+q≈1。

Description

形成抗反射涂层的方法
[0001]随着半导体工业中对更小特征尺寸的持续需求，最近出现了193mm光学平版印刷术作为生产具有低于100nm器件的技术。使用这种较短波长的光要求底部抗反射涂层(BARC)以降低在基底上的反射，并通过吸收穿过光致抗蚀剂的光，减弱光致抗蚀剂的摆动曲线。可商购的抗反射涂料(ARC)由有机和无机这两种材料组成。典型地，无机ARC(它显示出良好的抗蚀刻性)是CVD基材料，和具有极端形貌的所有综合的缺点。通过旋涂工艺施加有机ARC材料，且该材料具有优良的填充和平面化性能，但缺点是对有机光致抗蚀剂的蚀刻选择性差。因此，高度需求提供兼有无机和有机ARC材料的优点的材料。
[0002]本发明涉及对于193nm的光来说显示出抗反射的涂层性能的倍半硅氧烷树脂。可在除去阶段汽提这些抗反射涂层，且当储存时倍半硅氧烷树脂是稳定的。另外，作为193nm的ARC材料，在倍半硅氧烷树脂内存在氢化物基团对于所需的固化性能和汽提能力来说是必要的。
[0003]特别地，本发明涉及一种在电子器件上形成抗反射涂层的方法，该方法包括：
(A)施加ARC组合物到电子器件上，所述ARC组合物包括：
(i)具有下述通式的倍半硅氧烷树脂：
(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.50，和m+n+p+q≈1；和
(ii)溶剂；和
(B)除去溶剂，并固化倍半硅氧烷树脂，从而在电子器件上形成抗反射涂层。
[0004]形成抗反射涂层可用的倍半硅氧烷树脂(i)的通式为：
(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.30，和m+n+p+q≈1。或者，m的数值为0.10-0.50，n的数值为0.10-0.50，p的数值为0.10-0.70，q的数值为0.05-0.20。
[0005]R选自酯基和聚醚基。酯基是含有至少一个酯官能团的任何有机取代基。聚醚基是具有通过氧原子连接的烃单元的有机取代基，可用下述结构为代表，但不限于这些：Si-(CH2)a[O(CH2)b]cOR′，其中a＝2-12；b＝2-6；c＝2-200；R′＝H、烷基或其它有机基团。此处可用的酯基的实例是Si-(CH2)2-O-C(O)Me和Si-(CH2)2-C(O)-OMe。此处可用的聚醚基的实例是Si-(CH2)3-(OCH2CH2)7-OMe、Si-(CH2)3-(OCH2CH2)7-OH和Si-(CH2)3-(OCH2CH2)7-OAc。
[0006]倍半硅氧烷树脂可以是基本上充分地缩合或者可以仅仅部分缩合。当倍半硅氧烷树脂是部分缩合时，在倍半硅氧烷树脂内小于40mol％的单元应当含有Si-OH基团。较高含量的这些单元可能导致树脂不稳定并形成凝胶。典型地，在倍半硅氧烷树脂内6-38mol％的单元含有Si-OH基团。
[0007]倍半硅氧烷树脂的重均分子量(Mw)范围为500-400,000，和优选范围为500-100,000，或者700-10,000。
[0008]此处可用的倍半硅氧烷树脂可例举但不限于(PhSiO3/2)0.1-0.25(HSiO3/2)0.15-0.30(MeSiO3/2)0.25-0.55(RSiO3/2)0.05-0.20，R＝-(CH2)2-OC(O)Me；(PhSiO3/2)0.1-0.25(HSiO3/2)0.15-0.30(MeSiO3/2)0.25-0.55(RSiO3/2)0.05-0.20，R＝-(CH2)2-(OE)7-OH。
[0009]可通过本领域已知的方法生产倍半硅氧烷树脂。例如，可通过水解和缩合苯基三烷氧基硅烷、氢三烷氧基硅烷和甲基三烷氧基硅烷的混合物，生产倍半硅氧烷树脂。或者，可通过水解和缩合苯基三氯硅烷、氢三氯硅烷和甲基三氯硅烷来生产它们。
[0010]典型地在溶剂存在下生产倍半硅氧烷树脂。可在生产倍半硅氧烷树脂中使用不含有可参与该反应的官能团的任何合适的有机或者有机硅溶剂。通常基于溶剂和硅烷反应物的总重量，以40-98wt％，或者70-90wt％的用量使用溶剂。可以两相或者单相体系形式进行反应。
[0011]有用的有机溶剂可例举但不限于：饱和脂族烃，例如正戊烷、己烷、正庚烷和异辛烷；脂环族烃，例如环戊烷和环己烷；芳烃，例如苯、甲苯、二甲苯、1，3，5-三甲基苯；醚类，例如四氢呋喃、二烷、乙二醇二乙醚、乙二醇二甲醚；酮类，例如甲基异丁基酮(MIBK)和环己酮；卤素取代的烷烃，例如三氯乙烷；卤代芳烃，例如溴苯和氯苯；酯类，例如异丁酸异丁酯和丙酸丙酯。有用的有机硅溶剂可例举但不限于环状硅氧烷，例如八甲基环四硅氧烷和十甲基环五硅氧烷。可使用单一的溶剂或者可使用溶剂的混合物。
[0012]可在任何温度下进行生产倍半硅氧烷树脂的反应，只要它不引起显著胶凝或者引起倍半硅氧烷树脂固化即可。典型地，在范围为5℃-150℃的温度下进行反应，其中建议采用环境温度。
[0013]形成倍半硅氧烷树脂的时间取决于许多因素，例如温度，硅烷反应物的类型和用量，以及催化剂(若存在的话)的用量。典型地，反应时间为几分钟到几小时。本领域的技术人员能容易地确定完成反应所需的时间。
[0014]在完成反应之后，可任选地除去催化剂。除去催化剂的方法是本领域已知的，和包括中和、汽提或者水洗或其结合。催化剂尤其当在溶液内时可能负面影响有机硅树脂的寿命，因此建议除去它。
[0015]在制备倍半硅氧烷树脂的方法中，在反应完成之后，可在减压下从倍半硅氧烷树脂溶液中除去挥发物。这种挥发物包括醇副产物、过量的水、催化剂、盐酸(氯代硅烷路线)和溶剂。除去挥发物的方法是本领域已知的和包括例如蒸馏。
[0016]在生产倍半硅氧烷树脂的反应之后，可进行许多任选的步骤，以获得所需形式的倍半硅氧烷树脂。例如，可通过除去溶剂，以固体形式回收倍半硅氧烷树脂。除去溶剂的方法不是关键的，和许多方法是本领域已知的(例如，在加热和/或真空下蒸馏)。一旦以固体形式回收倍半硅氧烷树脂，则可任选地将树脂再溶解在相同或者另一溶剂中以供特定的应用。或者，对于最终产物来说，若想要除了反应所使用的溶剂以外的不同溶剂，则可通过添加第二种溶剂，并且例如借助蒸馏除去第一种溶剂，来进行溶剂交换。另外，可通过除去一些溶剂或者添加额外用量的溶剂，来调节在溶剂内的树脂浓度。
[0017]通过结合倍半硅氧烷树脂(i)与溶剂(ii)，来生产ARC组合物。然后将ARC组合物施加到电子器件上，除去溶剂，并固化倍半硅氧烷树脂，从而产生抗反射涂层。
[0018]典型地，电子器件是半导体器件，例如拟用于制造半导体组件的硅基器件和砷化镓基器件。典型地，该器件包括至少一层半导体层和包括各种传导、半导或者绝缘材料的多层其它层。
[0019]此处可用的溶剂可以与生产倍半硅氧烷树脂所使用的溶剂相同或者不同。有用的溶剂(ii)尤其包括但不限于1-甲氧基-2-丙醇、丙二醇单甲基乙基乙酸酯(PGMEA)和环己酮。基于ARC组合物的总重量，ARC组合物典型地包括约10％-约99.9wt％的溶剂，或者80-95wt％。
[0020]ARC组合物可进一步包括固化催化剂。合适的固化催化剂包括无机酸、光致产酸剂和热致产酸剂。固化催化剂可例举但不限于硫酸(H2SO4)、(4-乙基硫苯基)甲基苯基三氟甲磺酸锍和2-萘基二苯基三氟甲磺酸锍。典型地，基于ARC组合物的总重量，固化催化剂以最多1000ppm，或者500ppm的用量存在。
[0021]施加ARC组合物到电子器件上的具体方法包括但不限于旋涂、浸涂、喷涂、流涂、筛网印刷和其它。优选的施加方法是旋涂。典型地，涂布牵涉在约2000RPM下旋转电子器件，并添加ARC组合物到旋转的电子器件的表面上。
[0022]除去溶剂，并固化倍半硅氧烷树脂，从而在电子器件上形成抗反射涂层。通过已知的方法，例如加热，或者在施加过程中通过旋转，除去溶剂。
[0023]固化通常包括加热涂布的电子器件到充足的温度下充足的持续时间，以导致固化。例如，可在80℃-450℃的温度下加热涂布的电子器件0.1-60分钟，或者150-275℃下0.5-5分钟，或者200℃-250℃下0.5-2分钟。可在固化步骤过程中使用任何加热方法。例如，可将涂布的电子器件置于石英管炉、对流烘箱内，或者使之静置在热板上。
[0024]为了保护在固化过程中倍半硅氧烷树脂避免与氧或者碳反应，可在惰性氛围下进行固化步骤。此处可用的惰性氛围包括但不限于氮气和氩气。“惰性”是指该环境含有小于50ppm和优选小于10ppm的氧气。进行固化和除去步骤时的压力不是关键的。典型地在大气压下进行固化步骤，但低于或者超大气压也可行。
[0025]一旦固化，则含有抗反射涂层的电子器件可在进一步的基底加工步骤例如光刻法中使用。当在光刻法中使用时，在抗反射涂层上形成抗蚀剂图像。形成抗蚀剂图像的方法包括(a)在抗反射涂层之上形成抗蚀剂组合物的膜；(b)成影像地曝光抗蚀剂膜于辐射线下，产生曝光膜；和(c)使曝光膜显影，产生图像。在采用波长为157nm-365nm的紫外辐射线或者波长为157nm或193nm的紫外辐射线成影像地曝光的抗蚀剂组合物的情况下，在电子器件上的抗反射涂层尤其有用。一旦在抗蚀剂膜内产生图像，则在抗反射涂层内蚀刻图案。可使用已知的蚀刻材料来除去抗反射涂层。可利用额外的步骤或者除去抗蚀剂膜和其余抗反射涂层，以产生具有所需结构的器件。
[0026]包括下述实施例，以说明本发明的优选实施方案。本领域的技术人员应当理解，在以下实施例中公开的技术代表本发明人发现在本发明的实践中作用良好的技术，因此可视为构成本发明实践的优选模式。然而，本领域的技术人员应当理解，鉴于本发明的公开内容，可在所公开的具体实施方案中作出许多变化，且在没有脱离本发明的精神和范围的情况下，仍然获得相同或者类似的结果。
实施例
树脂合成
实施例1：TPh 0.25TH 0.30TMe 0.40TX1 0.05，X1＝-(CH2)2-OC(O)Me
在氮气下，将120g PGMEA、13.2g(0.0625mol)苯基三氯硅烷、10.2g(0.075mol)三氯硅烷、14.9g(0.1mol)甲基三氯硅烷和2.8g(0.0125mol)乙酰氧基乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例2：TPh 0.25TH 0.30TMe 0.40TX2 0.05，X2＝-(CH2)2-C(O)OMe
在氮气下，将120g PGMEA、13.2g(0.0625mol)苯基三氯硅烷、10.2g(0.075mol)三氯硅烷、14.9g(0.1mol)甲基三氯硅烷和2.8g(0.0125mol)2-(羧甲氧基)乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例3：TPh 0.25TH 0.30TMe 0.25TX1 0.20，X1＝-(CH2)2-OC(O)Me
在氮气下，将120g PGMEA、13.2g(0.0625mol)苯基三氯硅烷、11.5g(0.085mol)三氯硅烷、9.30g(0.0625mol)甲基三氯硅烷和11.1g(0.05mol)乙酰氧基乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例4：TPh 0.10TH 0.30TMe 0.55TX2 0.05，X2＝-(CH2)2-C(O)OMe
在氮气下，将120g PGMEA、5.29g(0.025mol)苯基三氯硅烷、10.16g(0.075mol)三氯硅烷、20.55g(0.1375mol)甲基三氯硅烷和2.77g(0.0125mol)2-(羧甲氧基)乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例5：TPh 0.10TH 0.30TMe 0.50TX2 0.10，X2＝-(CH2)2-C(O)OMe
在氮气下，将120g PGMEA、5.29g(0.025mol)苯基三氯硅烷、10.16g(0.075mol)三氯硅烷、18.69g(0.125mol)甲基三氯硅烷和5.54g(0.025mol)2-(羧甲氧基)乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例6：TPh 0.10TH 0.25TMe 0.55TX2 0.10，X2＝-(CH2)2-C(O)OMe
在氮气下，将120g PGMEA、5.29g(0.025mol)苯基三氯硅烷、8.47g(0.075mol)三氯硅烷、20.55g(0.138mol)甲基三氯硅烷和5.54g(0.025mol)2-(羧甲氧基)乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例7：TPh 0.10TH 0.30TMe 0.525TX2 0.075，X2＝-(CH2)2-C(O)OMe
在氮气下，将120g PGMEA、5.29g(0.025mol)苯基三氯硅烷、10.16g(0.075mol)三氯硅烷、19.62g(0.131mol)甲基三氯硅烷和4.15g(0.019mol)2-(羧甲氧基)乙基三氯硅烷的混合物转移到反应器中。在1小时的时间段内，将200g PGMEA和10g(0.555mol)水的溶液加入到三氯硅烷的溶液中。在20℃下搅拌另外1小时，使反应稠化。然后，在40℃下，通过旋转蒸发仪，浓缩树脂溶液到约10wt％。将约40g乙醇加入到树脂溶液中。再一次汽提溶液到约20wt％。再次取出烧瓶，并用额外的PGMEA稀释该溶液到10wt％。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例8：TPh 0.25TH 0.15TMe 0.45TX3 0.15，X3＝-(CH2)2-(OE)7-OH
通过在20℃下共水解苯基三氯硅烷、三氯硅烷和甲基三氯硅烷，制备TPh 0.25TH 0.30TMe 0.45树脂的10％PGMEA溶液。将5.00g TPh 0.25TH 0.30TMe 0.45的10％PGMEA溶液和0.128g单烯丙基聚乙二醇(DP＝7)混合到反应烧瓶内。在50℃下，使该混合物循环通过铂催化剂床18小时。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例9：TPh 0.25TH 0.10TMe 0.45TX3 0.20，X3＝-(CH2)2-(OE)7-OH
通过在20℃下共水解苯基三氯硅烷、三氯硅烷和甲基三氯硅烷，制备TPh 0.25TH 0.30TMe 0.45树脂的10％PGMEA溶液。将145.00gTPh 0.25TH 0.30TMe 0.45的10％PGMEA溶液和15.6g单烯丙基聚乙二醇(DP＝7)混合到反应烧瓶内。在50℃下，使该混合物循环通过铂催化剂床18小时。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例10：TPh 0.10TH 0.30TMe 0.55TX3 0.05，X3＝-(CH2)2-(OE)7-OH
通过在20℃下共水解苯基三氯硅烷、三氯硅烷和甲基三氯硅烷，制备TPh 0.25TH 0.30TMe 0.45树脂的10％PGMEA溶液。将120.00g TPh 0.25TH 0.30TMe 0.45的10％PGMEA溶液和3.86g单烯丙基聚乙二醇(DP＝7)混合到反应烧瓶内。在50℃下，使该混合物循环通过铂催化剂床18小时。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
实施例11：TPh 0.10TH 0.25TMe 0.60TX3 0.05，X3＝-(CH2)2-(OE)7-OH
通过在20℃下共水解苯基三氯硅烷、三氯硅烷和甲基三氯硅烷，制备TPh 0.25TH 0.25TMe 0.60树脂的10％PGMEA溶液。接下来，将120.00gTPh 0.25TH 0.25TMe 0.60的10％PGMEA溶液和3.48g单烯丙基聚乙二醇(DP＝7)混合到反应烧瓶内。在50℃下，使该混合物循环通过铂催化剂床18小时。过滤溶液通过0.20微米的PTFE过滤器，并储存在250ml HDPE瓶子内。
膜涂层和表征
在Karl Suss CT62旋涂器上加工在晶片上的膜涂层。使树脂PGMEA溶液首先过滤通过0.2微米的PTFE过滤器，然后旋涂在标准单面四英寸抛光的低电阻率晶片或者双面抛光的FTIR晶片上(旋转速度＝2000rpm；加速度＝5000，时间＝20秒)。如表中所示，使用具有氮气吹扫的快速热加工(RTP)烘箱，在(200-250℃)的温度下固化膜90秒。使用J.A.Woollam椭圆计，测定膜厚、折射指数和k值。所记录的厚度值是9次测量的平均值。通过测量PGMEA保持(1分钟)以及漂洗之前和之后的膜厚变化(ΔTh，单位：埃)，确定固化之后膜的抗PGMEA性；通过测量四甲基氢氧化铵(TMAH)保持(1分钟)以及漂洗之前和之后的膜厚变化(ΔTh，单位：埃)，确定固化之后的抗TMAH性。使用水和二碘甲烷作为液体，测量接触角，以便利用Zisman方法，计算润湿的临界表面张力。用两种商业湿汽提溶液NE89和CC1，完全汽提由上述树脂制造的所有固化膜。结果在表1和表2中。
表1：评价TPhTHTMeTX(X＝酯基)树脂
 树脂实施例  烘烤温度℃  Th埃  水接触角  表面能  PGMEA之后的ΔTh(埃)  TMAH之后的ΔTh(埃)
 1  225225250250  2285227622662287  8586  33.6  12 1310
 2  225225250250  2081208720382063  8789  152 4230
 3  250250  19301929 82 35.5  0 61
 4  250250  20242041  49 34
 5  250250  24872485 85 37.1  1 44
 6  250250  21072118 92 30.9  42 34
 7  250250  19081898 87.7 30.9  3 52
表2：评价TPhTHTMeTX′(X＝PEO基团)树脂
  树脂实施例   烘烤温度(℃)   Th(埃)   水接触角   表面能 PGMEA之后的ΔTh(埃)   TMAH之后的ΔTh(埃)
8 250250 25422540 n/a n/a 3 15
  9   250250   23892394 74 38.9 7 19
10 250250 22902320 81.2 32 28 60
  11   250250   21252186 83 31.3 46 47

Claims (26)

1.一种在电子器件上形成抗反射涂层的方法，该方法包括：
(A)施力ARC组合物到电子器件上，所述ARC组合物包括：
(i)具有下述通式的倍半硅氧烷树脂：
(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.50，和m+n+p+q≈1；和
(ii)溶剂；和
(B)除去溶剂，并固化倍半硅氧烷树脂，从而在电子器件上形成抗反射涂层。
2.权利要求1的方法，其中m的数值为0.10-0.50，n的数值为0.10-0.50，p的数值为0.10-0.70，和q的数值为0.05-0.20。
3.权利要求1的方法，其中在倍半硅氧烷树脂内，小于40mol％的单元含有Si-OH基团。
4.权利要求1的方法，其中在倍半硅氧烷树脂内，6-38mol％的单元含有Si-OH基团。
5.权利要求1的方法，其中溶剂(ii)选自1-甲氧基-2-丙醇、亚丙基甲醚乙酸酯和环己酮。
6.权利要求1的方法，其中基于ARC组合物的重量，ARC组合物含有80-95wt％的溶剂。
7.权利要求1的方法，其中ARC组合物另外含有固化催化剂。
8.权利要求1的方法，其中通过旋涂施力ARC组合物。
9.权利要求1的方法，其中通过加热固化倍半硅氧烷树脂。
10.权利要求9的方法，其中通过在150℃-275℃范围内的温度下加热来固化倍半硅氧烷树脂。
11.权利要求1的方法，其中通过在200℃-250℃范围内的温度下加热来固化倍半硅氧烷树脂。
12.权利要求1的方法，其中通过在惰性氛围下加热来固化倍半硅氧烷树脂。
13.一种在电子器件上形成抗反射涂层的方法，该方法包括：
(A)施加ARC组合物到电子器件上，所述ARC组合物包括：
(i)具有下述通式的倍半硅氧烷树脂：(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.50，和m+n+p+q≈1；和
(ii)溶剂；
(B)除去溶剂，并固化倍半硅氧烷树脂，从而在电子器件上形成抗反射涂层；和
(C)在抗反射涂层上形成抗蚀剂图像。
14.权利要求13的方法，其中通过以下步骤形成抗蚀剂图像：
(a)在抗反射涂层之上形成抗蚀剂组合物的膜；
(b)成影像地曝光抗蚀剂膜于辐射线下，产生曝光膜；
(c)使曝光膜显影，产生图像。
15.一种在电子器件上形成抗反射涂层的方法，该方法包括：
(A)施加ARC组合物到电子器件上，所述ARC组合物包括：
(i)具有下述通式的倍半硅氧烷树脂：(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.50，和m+n+p+q≈1；和
(ii)溶剂；
(B)除去溶剂，并固化倍半硅氧烷树脂，从而在电子器件上形成抗反射涂层；
(C)在抗反射涂层上形成抗蚀剂图像；和
(D)在抗反射膜内蚀刻图案。
16.一种在电子器件上形成抗反射涂层的方法，该方法包括：
(A)施力ARC组合物到电子器件上，所述ARC组合物包括：
(i)具有下述通式的倍半硅氧烷树脂：(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.50，和m+n+p+q≈1；和
(ii)溶剂；
(B)除去溶剂，并固化倍半硅氧烷树脂，从而在电子器件上形成抗反射涂层；
(C)在抗反射涂层上形成抗蚀剂图像；
(D)在抗反射膜内蚀刻图案；和
(E)除去抗蚀剂图像和抗反射膜。
17.一种ARC组合物，它包括：
(i)具有下述通式的倍半硅氧烷树脂：(PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q
其中Ph是苯基，Me是甲基，R选自酯基和聚醚基，x的数值为0、1或2；m的数值为0.05-0.95，n的数值为0.05-0.95，p的数值为0.05-0.95，q的数值为0.01-0.50，和m+n+p+q≈1；和
(ii)溶剂。
18.权利要求17的组合物，其中m的数值为0.10-0.50，n的数值为0.10-0.50，p的数值为0.10-0.70，和q的数值为0.05-0.20。
19.权利要求17的组合物，其中在倍半硅氧烷树脂内，小于40mol％的单元含有Si-OH基团。
20.权利要求17的组合物，其中在倍半硅氧烷树脂内，6-38mol％的单元含有Si-OH基团。
21.权利要求17的组合物，其中溶剂(ii)选自1-甲氧基-2-丙醇、亚丙基甲醚乙酸酯和环己酮。
22.权利要求17的组合物，其中基于ARC组合物的重量，ARC组合物含有80-95wt％的溶剂。
23.权利要求17的组合物，其中ARC组合物另外含有固化催化剂。
24.权利要求17的组合物，其中R是酯基，和该酯基是含有至少一个酯官能团的任何有机取代基。
25.权利要求17的组合物，其中R是聚醚基，和该聚醚基是具有通过氧原子连接的烃单元的有机取代基。
26.权利要求25的组合物，其中聚醚基的结构为Si-(CH2)a[O(CH2)b]cOR′，其中a＝2-12；b＝2-6；c＝2-200；R′选自H、烷基或有机基团。
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