CN101064323A - 电光装置、电子设备、及电光装置的制造方法 - Google Patents
电光装置、电子设备、及电光装置的制造方法 Download PDFInfo
- Publication number
- CN101064323A CN101064323A CNA2007101047715A CN200710104771A CN101064323A CN 101064323 A CN101064323 A CN 101064323A CN A2007101047715 A CNA2007101047715 A CN A2007101047715A CN 200710104771 A CN200710104771 A CN 200710104771A CN 101064323 A CN101064323 A CN 101064323A
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- gate insulation
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- electrode
- film
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP121641/2006 | 2006-04-26 | ||
JP2006121641A JP2007294709A (ja) | 2006-04-26 | 2006-04-26 | 電気光学装置、電子機器、および電気光学装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101064323A true CN101064323A (zh) | 2007-10-31 |
CN100547802C CN100547802C (zh) | 2009-10-07 |
Family
ID=38191872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101047715A Expired - Fee Related CN100547802C (zh) | 2006-04-26 | 2007-04-26 | 电光装置、电子设备、及电光装置的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070252152A1 (zh) |
EP (1) | EP1850386A1 (zh) |
JP (1) | JP2007294709A (zh) |
KR (1) | KR100884118B1 (zh) |
CN (1) | CN100547802C (zh) |
TW (1) | TW200742089A (zh) |
Cited By (5)
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CN101950733A (zh) * | 2010-08-02 | 2011-01-19 | 友达光电股份有限公司 | 像素结构的制造方法及有机发光元件的制造方法 |
CN102598232A (zh) * | 2009-10-02 | 2012-07-18 | 国立大学法人大阪大学 | 有机半导体膜的制造方法及有机半导体膜阵列 |
CN107833924A (zh) * | 2017-10-26 | 2018-03-23 | 京东方科技集团股份有限公司 | 顶栅型薄膜晶体管及其制备方法、阵列基板、显示面板 |
CN109427848A (zh) * | 2017-08-30 | 2019-03-05 | 京东方科技集团股份有限公司 | Oled显示面板及其制备方法、oled显示装置 |
CN110676264A (zh) * | 2019-09-09 | 2020-01-10 | 深圳市华星光电技术有限公司 | 像素电极接触孔设计 |
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KR20070117079A (ko) * | 2006-06-07 | 2007-12-12 | 삼성전자주식회사 | 액정 표시 패널 및 그 제조 방법 |
EP2183780A4 (en) * | 2007-08-02 | 2010-07-28 | Applied Materials Inc | THIN FILM TRANSISTORS USING THIN FILM SEMICONDUCTOR MATERIALS |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
JP5401831B2 (ja) * | 2008-04-15 | 2014-01-29 | 株式会社リコー | 表示装置 |
JP5704790B2 (ja) | 2008-05-07 | 2015-04-22 | キヤノン株式会社 | 薄膜トランジスタ、および、表示装置 |
US9041202B2 (en) * | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
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KR20120071398A (ko) * | 2009-09-16 | 2012-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
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US8840763B2 (en) | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
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US6816355B2 (en) * | 2001-09-13 | 2004-11-09 | Seiko Epson Corporation | Capacitor, semiconductor device, electro-optic device, method of manufacturing capacitor, method of manufacturing semiconductor device, and electronic apparatus |
US6853052B2 (en) * | 2002-03-26 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a buffer layer against stress |
JP2004101615A (ja) * | 2002-09-05 | 2004-04-02 | Seiko Epson Corp | アクティブマトリクス基板、液晶装置、電子機器 |
-
2006
- 2006-04-26 JP JP2006121641A patent/JP2007294709A/ja active Pending
-
2007
- 2007-03-21 TW TW096109750A patent/TW200742089A/zh unknown
- 2007-04-05 EP EP07251523A patent/EP1850386A1/en not_active Withdrawn
- 2007-04-17 US US11/785,386 patent/US20070252152A1/en not_active Abandoned
- 2007-04-26 KR KR1020070040991A patent/KR100884118B1/ko not_active IP Right Cessation
- 2007-04-26 CN CNB2007101047715A patent/CN100547802C/zh not_active Expired - Fee Related
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102598232A (zh) * | 2009-10-02 | 2012-07-18 | 国立大学法人大阪大学 | 有机半导体膜的制造方法及有机半导体膜阵列 |
CN102598232B (zh) * | 2009-10-02 | 2015-06-24 | 国立大学法人大阪大学 | 有机半导体膜的制造方法及有机半导体膜阵列 |
CN101950733A (zh) * | 2010-08-02 | 2011-01-19 | 友达光电股份有限公司 | 像素结构的制造方法及有机发光元件的制造方法 |
CN101950733B (zh) * | 2010-08-02 | 2012-06-27 | 友达光电股份有限公司 | 像素结构的制造方法及有机发光元件的制造方法 |
CN109427848A (zh) * | 2017-08-30 | 2019-03-05 | 京东方科技集团股份有限公司 | Oled显示面板及其制备方法、oled显示装置 |
WO2019041954A1 (zh) * | 2017-08-30 | 2019-03-07 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
CN109427848B (zh) * | 2017-08-30 | 2021-02-26 | 京东方科技集团股份有限公司 | Oled显示面板及其制备方法、oled显示装置 |
US11127803B2 (en) | 2017-08-30 | 2021-09-21 | Boe Technology Group Co., Ltd. | Display panel and display device |
CN107833924A (zh) * | 2017-10-26 | 2018-03-23 | 京东方科技集团股份有限公司 | 顶栅型薄膜晶体管及其制备方法、阵列基板、显示面板 |
CN107833924B (zh) * | 2017-10-26 | 2020-06-19 | 京东方科技集团股份有限公司 | 顶栅型薄膜晶体管及其制备方法、阵列基板、显示面板 |
CN110676264A (zh) * | 2019-09-09 | 2020-01-10 | 深圳市华星光电技术有限公司 | 像素电极接触孔设计 |
CN110676264B (zh) * | 2019-09-09 | 2021-11-23 | Tcl华星光电技术有限公司 | 像素电极接触孔设计 |
Also Published As
Publication number | Publication date |
---|---|
US20070252152A1 (en) | 2007-11-01 |
TW200742089A (en) | 2007-11-01 |
CN100547802C (zh) | 2009-10-07 |
KR100884118B1 (ko) | 2009-02-17 |
JP2007294709A (ja) | 2007-11-08 |
KR20070105925A (ko) | 2007-10-31 |
EP1850386A1 (en) | 2007-10-31 |
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